Product Portfolio
With its very broad portfolio of discrete detectors and arrays, AMS Technologies offers optical detector solutions for every wavelength range, uncooled and cooled, as a single detector, PSD or detector array – complemented by assemblies with filters or amplifiers as well as complete detection subsystems that can be configured by the user.
Our exceptionally large portfolio of silicon detectors and arrays includes general-purpose silicon photodiodes as well as diodes with particularly high speed or fast response behaviour, variants with wavelength-enhanced sensitivity or silicon avalanche photodiodes (APDs). Beyond single silicon diodes, the product range comprises duo- and tetra-lateral detectors as well as silicon multi-element photodiodes and arrays. In addition to the photodiodes, our silicon detector assemblies also include filters, transimpedance amplifiers or multiple diodes in a sandwich design.
AMS Technologies carries a broad variety of detectors and arrays that are based on indium gallium arsenide (InGaAs), including general-purpose and PIN InGaAs photodiodes, as well as large active area, segmented, back-illuminated diodes or InGaAs photodiode arrays. For high-performance applications, we also provide InGaAs avalanche photodiodes (APDs). In addition to the photodiode devices, our InGaAs detector assemblies include photodiode-amplifier hybrids, mini-DIL optical receivers or pigtail assemblies.
A broad variety of NIR (near infrared) and MWIR (midwave infrared) detectors and arrays based on lead sulfide (PbS) or lead selenide (PbSe) is available, covering a wide spectral range with wavelengths from 1 to 5 µm. The portfolio encompasses PbS near-infrared (NIR) detectors, available as single-pixel, multi-single-pixel and multi-pixel versions, PbS line array detectors, available as bare chips or encapsulated modules, uncooled or TEC-cooled single-pixel PbSe detectors as well as bare chip PbSe NIR detectors, protected by a unique thin-film encapsulation for longer lifetime and highest detectivity at room temperature.
Complementing the ranges of Silicon, InGaAs, PbS and PbSe detectors and arrays, AMS Technologies offers a comprehensive array of other discrete detectors and arrays based on materials like GaAs, HgCdTe, InAs/InAsSb, GaP or AlGaAs, but also balanced photodetectors, integrated optical receiver modules or infrared detection modules.
Related Products
For detecting or recording even larger two-dimensional arrays of pixels, have a look at our range of cameras, including CCD and CMOS cameras, IR cameras and x-ray cameras.
Guiding and focusing light onto optical detectors can be done using AMS Technologies’ broad portfolio of optics components like optical lenses, optical filters or optical windows, as well as our optical fibers.
Definition
Optical detectors and detector arrays usually consist of photodiodes, i.e. semiconductor light sensors with a p-n junction or PIN junction (active area) at which incident light in the ultraviolet, visible or infrared wavelength range generates an electric current due to the internal photovoltaic effect.
If photons of sufficient energy (higher than that of the semiconductor material’s bandgap, e.g. more than 1.1 eV for silicon) hit the material of the diode, charge carriers (electron-hole pairs) are generated, which quickly drift apart in the depletion region and lead to a photocurrent. This photocurrent is linearly proportional to the light’s radiation power over many orders of magnitude until saturation. Given suitable layout and circuitry, the reaction time of a photodiode to the incidence of light is very short; it can be as short as a fraction of a nanosecond.
The main distinguishing property of detectors and arrays is the semiconductor material used – as this material or rather its bandgap (see above) determines the range of spectral sensitivity of the detector. Some materials and their spectral sensitivity:
| Silicon | 190 to 1100 nm |
| GaAs | 400 to 850 nm |
| InGaAs | 800 to 2600 nm |
| PbS/PbSe | 1000 to 3500 nm |
| HgCdTe | 400 to 14000 nm |
| InAs/InAsSb | 2000 to 5500 nm |
| CdTe | 5000 to 20000 nm |
Lower bandgap results in more charge carriers (electron-hole pairs) being generated “spontaneously” (without any incident light) from thermal molecular movement. In order to reduce this photocurrent noise in applications with very low light intensity, some photodetectors are cooled by either liquid nitrogen or multiple-stage thermoelectric coolers (TECs).
In addition to a regular photodiode’s p- and n-doped layers, PIN photodiodes feature an additional, intermediate intrinsic layer. As a result, PIN photodiodes generally have a lower junction capacitance, a higher maximum reverse voltage and a higher bandwidth. Typical cut-off frequencies of PIN photodiodes are over 1 GHz, compared to around 10 MHz for p/n photodiodes.
The basic principle of operation for avalanche photodiodes (APDs) is also the internal photovoltaic effect creating charge carriers, but in addition, these diodes use the avalanche effect for internal amplification and thus are particularly sensitive and fast detectors. However, the high sensitivity or amplification simultaneously leads to higher noise. APDs are used for detecting very low radiant powers, down to single photons, with achievable cut-off frequencies up to the gigahertz range.
A photodiode’s output signal can be measured as voltage or current, with the current measurement being far more advantageous in terms of linearity, offset and bandwidth. The generated output photocurrent is proportional to the incident light power. Due to the high output impedance of a photodiode, a transimpedance amplifier is usually applied to convert this current into a voltage signal for further processing.
Photoconductive or Photovoltaic?
Depending on the requirements of the application, photodiodes can be operated with or without bias voltage. These operating modes are called "photoconductive mode" (unbiased) and "photovoltaic mode" (biased).
In photoconductive mode with a reverse bias voltage applied, the bandwidth and linearity of photodiodes can be considerably improved, due to the reverse voltage widening the semiconductor’s depletion area and thus reducing its junction capacitance. However, applying a bias voltage also leads to higher dark current (a small amount of photocurrent present even in full darkness) and noise levels.
If the photodiode is used in applications with low frequencies up to a few hundred kHz or for the detection of extremely low light intensities, engineers usually prefer the photovoltaic mode without any reverse bias voltage applied. In this configuration, the output current of the detector shows a lower temperature dependence, and the circuit is less complex to realize.
Multi-element Detectors, Arrays and PSDs
Multi-element detectors and detector arrays are made of multiple, separate photodiodes, lined-up on a carrier, with a pitch that can for instance be aligned to a multi-channel fiber ribbon. Linear configurations are available as well as two-dimensional arrays of e.g. 2x2 or 4x4 photodiode elements.
Position sensing detectors (PSDs) consist of a common sensor surface that is either segmented or utilizes the lateral effect to determine the exact position at which a light beam hits the sensor. While segmented PSDs carry several detector segments divided by a gap or dead region, lateral-effect PSDs consist of a single planar diffused photodiode area without gaps or dead zones.
Alternative Terms: Optical Detector; Optical Array; Avalanche Photodiode; APD; PSD; Detector Module
1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD
Active Area Diameter 0.8-3 mm; Responsivity 25-36 A/W; Capacitance 2-10 pF; NEP 14-20 fW/√Hz; Dark Current 50, 100 nA; Package TO-5, TO-8
Excelitas’ 1064 nm long-wavelength enhanced Silicon Avalanche Photodiodes (APDs) C30954EH, C30955EH and C30956EH are made using a double-diffused “reach-through” structure. The design of these photodiodes is such that their long-wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties.
The C30954EH, C30955EH and C30956EH long-wavelength enhanced APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low-noise, low-capacitance, and fast rise and fall times characteristics.
To help simplify many design needs, these APDs are also available in Excelitas’ high-performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. In addition, these APDs are also available with built-in thermo-electric cooler for easier temperature control.
The C30954EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 0.8 mm active area diameter in a TO-5 package.
The C30955EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 1.5 mm active area diameter in a TO-5 package.
The C30956EH large-area, long-wavelength enhanced silicon avalanche Photodiode (Si APD) provides a 3 mm active area diameter in a TO-8 package.
Key Features:
Active Area Diameter: 0.8, 1.5, 3 mm
High Quantum Efficiency at 1060 nm: ≤40%
Enhanced Long-wave Response: >900 nm
Fast Response Time: 2 ns
Wide Operating Temperature Range
Low Capacitance @100 kHz: 2 to 10 pF
Responsivity @1060 nm: 25 to 36 A/W
Dark Current: 50, 100 nA
Spectral Noise Current: 0.5 pA/√Hz
NEP @1060 nm: 14 to 20 fW/√Hz
Vop Range: 275 to 425 V
Hermetically Sealed Packages: TO-5, TO-8
RoHS Compliant
TEC Option Available
Customization Available Upon Request
Applications: Range Finding; LiDAR (Light Detection and Ranging); YAG Laser Detection
Product number:
SW11551
Manufacturer:
Excelitas Technologies
4X4D Two-dimensional Silicon Array Detectors
4x4 Array Detector; 810, 850 nm Band Optimized; Active Area 1,0, 1.96 mm2; Responsivity 0.35 to 0.4 A/W; Capacitance 35, 75 pF; Package Ceramic LCC
OSI Optoelectronics’ 4X4D series comprise 4 by 4 arrays of super blue enhanced photodetectors. Two models are available: PIN-4X4D silicon array detectors feature an active area of 1.96 mm2 and a peak responsivity wavelength of 850 nm, while UDT-4X4D silicon array detectors with an active area of 1.0 mm2 show peak responsivity at 810 nm.
OSI Optoelectronics’ proprietary design provides virtually complete isolation between all of the 16 elements. The standard LCC package allows easy integration into your surface mount applications. Numerous applications include ratio and scattering measurements, as well as Position Sensing. For custom packages, special electro-optic requirements, or to order these parts in die form, please contact AMS Technologies.
Key Features:
4x4 Array Detector
Active Area: 1.0x1.0 mm (UDT-4X4D), 1.4x1.4 mm (PIN-4X4D)
Peak Responsivity Wavelength: 810 (UDT-4X4D), 850 nm (PIN-4X4D)
Very Fast Response
Extremely Low Cross-talk
Surface Mount Design
Package: Ceramic LCC
Applications: Ratio and Scattering Measurements; Position Sensing
Product number:
SW11021
Manufacturer:
OSI Optoelectronics
A2C-16-1.57 Multi-channel X-Ray Detector
540, 930 nm Band Optimized; 16 Elements; Active Area 2.35 mm2 per Element; AA Dimensions 2.00 x 1.18 mm per Element, Pitch 1.57 mm; Rise Time 0.1 µs; Responsivity 0.31, 0.59 A/W; Capacitance 28 pF; Package Special PCB
OSI Optoelectronics' A2C-16-1.57 multi-channel X-ray detector consists 16 individual elements grouped together in an array and mounted on PCB. For X-ray or gamma-ray application, these multi-channel detectors offer scintillator-mounting options: BGO, CdWO4 or CsI(TI). BGO (Bismuth Germanate) acts as an ideal absorber: it is widely accepted in high-energy detection applications. CdWO4 (Cadmium Tungstate) exhibits sufficiently high light output, helping improve spectrometry results. CsI (Cesium Iodide) is another high energy absorber, providing adequate resistance against mechanical shock and thermal stress. When coupled to scintillators, these silicon arrays map any medium or high radiation energy over to visible spectrum via scattering effect. Also, their specially designed PCB allows end-to-end connectivity. Multiple arrays can be deployed in situations that call for larger scale assembly. Key Features:
Scintillator Platform
5 V Bias
Channel Spacing Variety
Applications: Position Sensors; Multi-channel Gamma Counting; X-ray Security Systems
Product number:
SW11074
Manufacturer:
OSI Optoelectronics
AIP/PIP/MIP/FIP/SIP Configurable Line Infrared Detection Modules
Frequency Bandwidth up to 0.25, 1 GHz; Low Cut-off Frequency DC-10 kHz; High Cut-off Frequency 100 kHz-1 GHz; Transimpedance 0.5-200 kV/A; Output Impedance 50 Ω; Output Voltage Swing ±1-±10 V
Vigo System’s AIP, PIP, MIP, FIP and SIP configurable line series of infrared (IR) detection modules integrate the infrared photodetector and the preamplifier in a common package. This integration makes the detectors less vulnerable to over-bias, electrostatic discharge, electromagnetic interference (EMI) and other environmental exposures. Additional advantages of the integration are improved high-frequency (HF) performance, output signal standardization, miniaturization, and cost reduction.
Vigo System’s broad line of transimpedance preamplifiers is especially designed for integration with each type of the supplier’s IR detectors. The configurable line of modules enables the selection of the active area, type of preamplifier and bandwidth of the detection module. This makes it possible to adapt the module to the needs of your own application.
To obtain the most optimal parameters of integrated module each preamplifier is individually matched to the selected detector. The parameters of each integrated set will be known after final evaluation (matching, adjustment and final tests). If you need any assistance in selecting Vigo System products that are appropriate for your application, please contact the AMS Technologies IR detector specialists.
Vigo System’s AIP series is a new generation of transimpedance, AC or DC coupled preamplifiers. It is designed to operate with either biased or non-biased Vigo System detectors. AIP is „all‑in-one” device – a preamplifier is integrated with a fan and a thermoelectric cooler controller in a compact housing. It is very convenient and user‑friendly device, thus can be easily used in a variety of applications. AIP series modules can be equipped with thermoelectrically cooled models of the PC, PCI, PV, PVI, PVM and PVMI IR detector series.
Vigo System’s PIP series comprises programmable, “smart” preamplifiers, offering extreme flexibility combined with superior signal parameters and high reliability. A built-in voltage monitor allows to check and optimize the working conditions (supply voltages, detector bias voltage, first and last stage output voltage offset etc.). It is also possible to change the gain, coupling (AC/DC), optimize the first stage transimpedance and manually or automatically suppress the voltage offset.
Optimized parameters are stored into the internal EEPROM memory and automatically loaded after the power is on. Reset to default settings is available at any time. For proper operation, the PTCC-01 TEC controller is required. PIP series modules can be equipped with thermoelectrically cooled models of the PC, PCI, PV, PVI, PVM and PVMI IR detector series.
Vigo System’s MIP series provides medium-size transimpedance, DC or AC coupled preamplifiers, intended to operate with either biased or non-biased Vigo System IR detectors. MIP series modules are equipped with a fan, do not require any additional external heatsink and are one of the most user-friendly preamplifier series which surely facilitates work. MIP series modules can be equipped with thermoelectrically cooled models of the PC, PCI, PV, PVI, PVM and PVMI IR detector series.
Vigo System’s FIP series of high-speed transimpedance, AC-coupled preamplifiers is intended to operate with the biased, TE-cooled IR detector models of Vigo System’s PV and PVI series. Thi series’ fast preamplifier enables precise I-V conversion, detector biasing up to 800 mV and simultaneously maintains compact size and keeps current noise low. FIP series modules are equipped with a fan and do not require additional heat dissipation. They are suitable for applications requiring wide frequency bandwidth. An additional DC output is available as an option.
Vigo System’s SIP series of ultra-small transimpedance, AC- or DC-coupled preamplifiers is designed to operate with either biased or non-biased detectors. It is compatible with uncooled IR detectors (in TO39 package, SIP-TO39) or thermoelectrically cooled IR detectors (in TO8 package, SIP-TO8) of the PC, PCI, PV, PVI, PVM and PVMI series. SIP series modules are dedicated for OEM applications, require external heatsinks and provide a possibility to adjust gain (devices with a frequency bandwidth up to 100 MHz).
Key Features:
Integrated Fan (AIP, MIP, FIP)
Integrated TEC Controller (AIP)
DC Monitor (AIP, Optional for FIP)
Frequency Bandwidth up to 250 MHz, 1 GHz (FIP)
Optimized for Effective Heat Dissipation
Compatible with Optical Accessories
Universal, Versatile & Flexible, Convenient to Use
Parameters Configurable by the User (PIP): Output Voltage Offset; Gain (in 40 dB Range); Bandwidth (150 kHz/1.5 MHz/20 MHz, 1.5 MHz/15 MHz/100 MHz); Coupling AC/DC; Detector’s Parameters (Temperature, Reverse Bias etc.)
Very Small Size (SIP)
Adjustable Gain as an Option (SIP)
Low Cut-off Frequency flo: DC to 10 kHz
High Cut-off Frequency fhi: 100 kHz to 1 GHz
Transimpedance Ki: 0.5 kV/A to 200 kV/A
Output Impedance Rout: 50 Ω
Output Voltage Swing Vout: ±1 V-, ±2 V, ±10 V
Power Supply Voltage: +5 VDC, +12 VDC, ±9 VDC, ±15 VDC, +12/-5 VDC
Max. Power Supply Current: ±50 mA, +100/-50 mA
Signal Output Socket: SMA, MMCX
DC Output Socket: SMA
Power Supply & TEC Control Socket: DC 2.1/5.5, DC 2.5/5.5, LEMO Female (PIP, MIP FIP), AMP2x4 (Male)
Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense
Product number:
SW11685
Manufacturer:
Vigo System
Ambient Light Sensors
Active Area 0.191-37.7 mm²; Radiometric Sensitivity 0.034-7 A/W; Capacitance 0.15-11 nF; Spectral Range 330-720 nm; Typ. Peak Wavelength 555, 580, 585 nm; NEP 11, 13, 53 fW/√Hz; Max. Dark Current 0.02-50 nA; Package TO-8, TO-46, T-1¾ Flat
Excelitas offers ambient light sensors that provide an easy solution for applications requiring a response similar to the human eye, making them ideal when the response should only be influenced by visible light.
Within this product family, we offer two types of Excelitas devices: IR-filtered silicon photodiodes and IR-filtered silicon phototransistors. These devices contribute in various applications to energy conservation in both fixed and portable devices. They are available in a number of standard packages, including surface mount for automated assembly.
Applications: Interior and Exterior Light Switching (Dusk/Dawn Switch); Interior and Exterior Light Control (Dimming); Automotive Headlight Dimmer; Display Contrast Control; Energy Conservation
Product number:
SW11560
Manufacturer:
Excelitas Technologies
APD Silicon Avalanche Photodiodes
800 nm Band Optimized; Active Area 0.03 to 19.6 mm2; AA Dia. 0.2 to 5.0 mm; Responsivity 20 to 50 A/W; Capacitance 1.5 to 105 pF; Package TO-5, TO-8, TO-52
OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications. Optimized for the 800 nm wavelength band, the APD series is available with five different active area sizes ranging from 0.2 to 5.0 mm in diameter. Depending on active area size, the devices are supplied in TO-5, TO-8 or TO-52 packages. Key Features:
High Speed Responsivity / QE
High Bandwidth / Fast Response
Low Noise
Low Bias Voltage
Hermetically Sealed TO-Packages
Applications: High Speed Optical Communications; Laser Range Finders; Bar Code Readers; Optical Remote Control; Medical Equipment; High Speed Photometry
Product number:
SW11018
Manufacturer:
OSI Optoelectronics
APDXX-8-150 Silicon Avalanche Photodiodes
800 nm Band Optimized; Active Area 0.003 to 1.77 mm2; AA Dia. 0.2 to 1.5 mm; Responsivity 50 A/W; Capacitance 1.5 to 10 pF; Package TO-5, TO-52
OSI Optoelectronics introduces its APDXX-8-150 “800 nm optimized” silicon avalanche photodiode (APD) series, available in hermetic metal packages. Devices offer lower noise and high sensitivity over bandwidths up to 1 GHz. APDXX-8-150 devices exhibit a low temperature coefficient of 0.45 V/˚C. OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. The APDXX-8-150 series is available with different active area sizes ranging from 0.2 to 1.5 mm in diameter as well as with flat windows or ball lenses for optical fiber applications. Depending on active area size, the devices are supplied in TO-5, or TO-52 packages. Key Features:
Active Area Diameters: 0.2, 0.5, 1.0, 1.5 mm
Low Temperature Coefficient: 0.45 V/°C
High Sensitivity
Low Noise
High Bandwidth
Applications: Optical Fiber Communication; Laser Range Finder; High-speed Photometry
Product number:
SW11047
Manufacturer:
OSI Optoelectronics
Avalanche Photodiode APD Arrays & Quadrants
C30927 Series: Number of Elements 4; Photo Sensitive Diameter 1.5 mm; Responsivity 15-62 A/W; Capacitance 1 pF; NEP 9-16 fW/√Hz; Spectral Noise Current per Element 0.5 pA/√Hz
Excelitas’ C30927 family of avalanche photodiode (APD) arrays and quadrants utilize the double-diffused “reach-through“ structure. This structure provides ultra-high sensitivity at 400 nm to 1000 nm.
The C30927 quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.
The C30927EH-01, -02 and -03 APD arrays and quadrants are optimized for use at wavelengths of 1060, 900, and 800 nm respectively. Each device type will provide high responsivity and excellent performance when operated within about 50 nm of the specified wavelength.
The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach-through” structure.
The standard versions of the Excelitas C30737 silicon APD array series are available with 16 or 64 elements and provide high responsivity between 500 nm and 1000nm. The standard versions are available either in a compact surface-mount “top-looking” leadless package (C30737MA) or in a BGA type “top-looking” package (C30737GA).
Both packages are ideally suited for high volume, cost-effective applications where a high gain APD is required. The leadless SMD and BGA packaged parts are RoHS-compliant and suitable for reflow soldering.
The C30737MH series of LLC SMD packaged EPI APDs has the smallest footprint SMD packages.
The C30737GA-02-64-90 silicon avalanche photodiode array (Si APD array) provides high responsivity between 500 nm and 1000 nm and is available in a BGA-type “top-looking” package. The C30737GA is ideally suited for high volume, cost-effective applications where a high gain APD is required. Its leadless BGA package is RoHS-compliant and suitable for reflow soldering.
Key Features C30927 Series:
High Quantum Efficiency
Hermetically Sealed Packages
Monolithic Chip With Minimal Dead Space Between Elements
Specific Tailored Wavelength Response
RoHS Compliant
Customization Available Upon Request
Applications C30927 Series: Spectroscopy; Particle Detection; Spot Tracking and Alignment Systems; Adaptive Optics; LiDAR (Light Detection and Ranging)
Product number:
SW11549
Manufacturer:
Excelitas Technologies
Avalanche Photodiode APD Module for OTDR
1250-1650 nm; Responsivity 25 A/W; Breakdown Voltage 40-70 V; Dark Current 1 nA; Package 3-pin TO 46
Wooriro’s APD module for OTDR applications is based on an InGaAs/InP avalanche photodiode (APD) in TO-46 package. This module’s APD is pigtailed, and the module can be ordered either without connector or with a SC, LC or FC type optical connector in UPC or APC version.
Designed for an optical wavelength range of 1250 nm to 1650 nm, the APD module for OTDR features a very low dark current of 1 nA typical at 98% breakdown voltage. Typical responsivity is 25 A/W at 1550 nm wavelength and 10 nW optical input power.
Key Features:
InGaAs/InP Avalanche Photodiode APD
Low Dark Current: 1 nA (Typical, @0.98 x Breakdown Voltage)
High Reliability
Optical Wavelength Range: 1250 nm to 1650 nm
Responsivity: 25 A/W Typ. (VAPD = 0.98 VBR, λ = 1550 nm, Pin = 10 nW)
Breakdown Voltage VBR: 40 V to 70 V (Id = 10 µA)
Temperature Coefficient of VBR: 90 mV/°C (-40 °C to +85 °C)
Dimensions: Ø 6 mm x Length 20.2 mm
Applications: OTDR; Optical Sensor; Optical Test Instruments
Product number:
SW11675
Manufacturer:
Wooriro
Avalanche Photodiode APD with Burst-mode TIA
Integrated TIA With Burst Mode; 1260-1640 nm; Responsivity 10.5 A/W; Breakdown Voltage 23-31 V; Dark Current 500 nA; Package 6-pin TO 46
Wooriro’s avalanche photodiode (APD) with burst-mode TIA is packaged in a 6-pin TO-46 case with aspherical lens cap. The APD’s integrated transimpedance amplifier (TIA) can be operated in a burst mode that lifts the input data rate from 1.25 Gb/s continuous to 10.3125 Gb/s burst. Users can control the burst mode via a logic signal connected to pin 5 of the APD’s TO-46 case.
Designed for an optical wavelength range of 1260 nm to 1640 nm, the APD with burst-mode TIA features a dark current of 500 nA typical at 98% breakdown voltage. Typical responsivity is 10.5 A/W at 1310 nm wavelength and 50 µW optical input power.
Key Features:
Integrated Transimpedance Amplifier (TIA)
Burst Mode for 10 Gb/s
Standard TO-46 Package With Aspherical Lens Cap
Optical Wavelength Range: 1260 nm to 1640 nm
Responsivity: 10.5 A/W Typ. (λ = 1310 nm, Pin = 50 µW, VAPD = 0.95 VBR)
TIA Supply Voltage: 3.3 V (2.97 V to 3.63 V)
TIA Supply Current: 40 mA Typ.
Transimpedance: 2 kΩ Typ. (Differential, 50 Ω on Each Output)
APD Breakdown Voltage VBR: 23 V to 31 V
Temperature Coefficient of VBR: 20 mV/°C (-40 °C to +85 °C)
APD Dark Current: 500 nA (Typical, @0.9 x Breakdown Voltage)
Sensitivity: -32 dBm Typ. (CM @Continuous Mode 10.3125 Gb/s NRZ, PRBS = 231 – 1, BER = 1E-3, ER = 5.97 dB, λ = 1310 nm)
Dimensions: Ø 4.67 mm x Length 3.38 mm
Applications: IEEE 802.3av 10G 10G-EPON OLT
Product number:
SW11676
Manufacturer:
Wooriro
BI-SMT Back Illuminated Si Photodiodes
920 nm Band Optimized; Active Area 5.76 to 88.36 mm2; AA Dimensions 2.4 x 2.4 to 9.4 x 9.4 mm; Rise Time 10, 20 ns; Responsivity 0.30 to 0.59 A/W; Capacitance 50 to 900 pF; Package SMT
OSI Optoelectronics’ BI-SMT product series are single-channel back-illuminated photodiodes specifically designed to minimize “dead” areas at the edge of the device. Each device is designed on a package with dimensions very similar to the chip itself. This design allows for multiple detectors to be arranged in a tiled format and offers ease of coupling to a scintillator. Key Features:
Chip Size Package
Easy Coupling to Scintillator
Patterned Electrodes
Applications: X-Ray Inspection; Computed Tomography; General Industrial Use
Product number:
SW11059
Manufacturer:
OSI Optoelectronics
Blue-enhanced Si Photodiodes
410, 436 nm Band Optimized; Active Area 0.81 to 200 mm2; AA Dia. 1.02 to 11.3 mm Round, 1.0 x 1.0 to 10 x 20 mm Rect.; Rise Time 0.02 to 45 µs; Responsivity 0.15 to 0.21 A/W; Capacitance 35 to 17,000 pF; Package TO-5, TO-8, TO-18, BNC, Metal, Plastic, Special
OSI Optoelectronics’ blue-enhanced photovoltaic detector series is utilized for applications requiring high sensitivity in the visible-blue region and moderate response speeds. These detectors provide additional sensitivity in the 350 to 550 nm region when compared to the regular photovoltaic devices. For visible and near IR applications i.e. spectral response ranges from 350 to 1100 nm, regular photovoltaic devices can be considered. These detectors feature high shunt resistance and low noise and exhibit long term stability. Unbiased operation of these detectors offers stability under wide temperature variations in DC or low-speed applications. For high light levels (>10mW/cm2), the photoconductive series detectors should be considered for better linearity. These blue-enhanced photovoltaic detectors are not designed to be reverse biased! Very slight improvement in response time may be obtained with a slight bias. Applying a reverse bias of more than a few volts (>3 V) will permanently damage the detectors. If faster response times are required, the photoconductive series should be considered. Please refer to the photovoltaic mode (PV) paragraph in the application note “Photodiode Characteristics and Applications” available under “Downloads” for detailed information on electronics set up. Key Features:
Blue Enhanced
High Speed Response
Low Capacitance
Low Dark Current
Wide Dynamic Range
High Responsivity
Ultra Low Noise
High Shunt Resistance
Applications: Pulse Detectors; Optical Communications; Bar Code Readers; Optical Remote Control; Medical Equipment; High-speed Photometry; Colorimeters; Spectroscopy Equipment; Fluorescence
Product number:
SW11055
Manufacturer:
OSI Optoelectronics
BPD-002 Balanced Photodetector
InGaAs Photodetector; 1060, 1310, 1550 nm; Aluminium Enclosure; Responsivity 0.7 mA/mW; RF Bandwidth 0-200 MHz; Transimpedance Gain 3×104 V/A
OCT and sensor systems require high-performance balanced photodetectors to increase system signal-to-noise ratio (SNR). General Photonics’ BPD-002 balanced photodetector module is specially designed for use in research and development, with ease of use and high performance as the primary design goals.
The BPD-002 device is fully enclosed in a compact, sturdy aluminium box with two optical input ports, a balanced RF output port, two 1 MHz monitor ports and a power supply port. With a bandwidth up to 200 MHz, a transimpedance gain larger than 30K and a saturation power larger than 130 µW, the BPD-002 balanced photodetector is ideal for integration into laboratory or commercial OCT, fiber sensor, and high-performance optical measurement systems.
Key Features:
Low Noise and High Common Mode Rejection Ratio (CMRR)
High Conversion Gain
Wide RF Output Bandwidth (3dB): DC to 200, 100, 50, 10 or 5 MHz
Wavelength Range: 1060, 1310 or 1550 nm ±50 nm
Compact Size: 97 x 61 x 19 mm
Photodetector Type: InGaAs
Photodetector Responsivity: 0.7 mA/mW @1310 nm
Transimpedance Gain: 3×104 V/A
CW Balanced Saturation Power: >130 μW @ 1310 nm
PD Input Power (linear range): 0 to 1 mW @ 1310 nm
PD Power Damage Threshold: 20 mW
Common Mode Rejection Ratio: >25 dB
RF Output Voltage Range (at 50 Ω): ±1.8 V
Applications: Optical Coherence Tomography; Fiber Sensing Interrogator; Instrumentation; Research and Development
Product number:
SW11299
Manufacturer:
General Photonics
BPD-003 OEM Balanced Photodetector
InGaAs Photodetector; 1060, 1310, 1550 nm; Aluminium Enclosure; Responsivity >0.5->0.8 mA/mW; RF Bandwidth 0-200 MHz; Transimpedance Gain 100×103 V/A
OCT and sensor systems require high performance balanced photodetectors to boost system signal-to-noise ratio (SNR). General Photonics’ BPD-003 OEM balanced photodetector module is specially designed for OEM applications in such fields, engineered for low cost and small size as well as high performance.
The BPD-003 device consists of an optical head and a post-amplification board with an SMA or SMB RF output connector. The optical head has two input fibers aligned with a pair of matched photodetectors, selected for high CMRR and sensitivity, followed by an integrated low-noise transimpedance amplifier (TIA) placed immediately after the photodetectors to amplify received signals with low noise and enhanced CMRR.
The integrated post-amplification circuit further conditions and amplifies the output of the detectors to a range of ± 3.5 V maximum. With a bandwidth of up to 200 MHz and a high conversion gain, the BPD-003 is ideal for integration into OCT, fiber sensor and high-performance optical measurement systems.
Key Features:
Very Low Noise
Excellent Common Mode Rejection Ratio (CMRR): >15 (40 to 200 MHz), >35 dB (DC to 40 MHz)
Photodetector Type: InGaAs
Photodetector Responsivity: >0.5 to >0.8 mA/mW
High Conversion Gain: >50 to >80 x 10³ mV/mW
Wide RF Output Bandwidth: DC to 200 MHz
Wavelength Range: 1060, 1310 or 1550 nm ±50 nm
Polarization Dependent Loss (PDL): <0.2 dB
Return Loss (RL): >45 dB
Maximum Input Power: 10 mW
Transimpedance Gain: 100 x 10³ V/A
Fiber Type: SMF-28, HI1060
Compact Size: 49.5 x 21.6 x 16.5 mm
Applications: Sensor Systems; Optical Coherence Tomography (OCT) Systems; Optical Measurement Systems; Fiber Sensing Interrogator; Instrumentation; Research and Development
Product number:
SW11300
Manufacturer:
General Photonics
BPW-34 Plastic Molded Si Photodiodes
970 nm Band Optimized; Active Area 7.25 mm2; AA Dimensions 2.69 x 2.69 mm; Rise Time 20 ns; Responsivity 0.15 to 0.60 A/W; Capacitance 12 to 65 pF; Package Plastic Molded
OSI Optoelectronics’ BPW-34 series are a family of high quality and reliability plastic encapsulated silicon photodiodes. The devices in this series exhibit similar electrical characteristics, but vary in optical response. BPW-34B has an excellent response in the blue region of the spectrum. BPW-34 series of plastic molded silicon photodiodes are excellent for mounting on PCB and hand-held devices in harsh environments. Key Features:
High Reliability
High Density Package
Rugged Resin Mold
High Speed
Low Dark Current
Applications: IR Sensors; Bar Code Scanners; Color Analysis; Smoke Detectors
Product number:
SW11051
Manufacturer:
OSI Optoelectronics
BPX65-100 Fiber Optic Receivers
400 to 1000 nm; Detector Responsivity 0.5 A/W; Amplifier Gain 14 kΩ; Power Supply 5 V; Max. Operating Voltage 6 V; Max. Data Rate 100 Mbps
OSI Optoelectronics’ BPX65-100 series of fiber optic receivers contains a BPX-65 ultra-high-speed photodiode coupled to an NE5212 (Signetics) transimpedance amplifier. Standard products include versions with no fiber connector as well as ST (BPX65-100ST) and SMA (BPX65-100SMA) connector versions. Key Features:
Bandwidth: 140 MHz
Differential Trans-resistance: 14 KΩ
Spectral Range: 400 to 1000 nm
2.5 pA/√Hz Transimpedance Amplifier
Applications: 100 Mbps Optical Communications; Fiber Patchcord Coupling; Silicon-based Optical Receivers
Product number:
SW11024
Manufacturer:
OSI Optoelectronics
CaliPile™ Thermopile Sensors
FoV 5°, 120°; Sensitivity 41-400 Counts/K; Noise 8 Counts/K; Time Constant 15, 30 ms; Package ISOthermal TO-5, TO-39, Ceramic SMD
Excelitas’ CaliPile™ thermopile sensors offer leading-edge, non-contact temperature measurement for applications in smart home, smart appliances, intelligent thermostats and HVAC control systems, and ear and forehead thermometers.
Excelitas’ CaliPile™ thermopile sensors represent the latest innovation in thermal IR sensing. The only one of its kind, CaliPile is an intelligent, multifunction thermal infrared sensor series. In addition to traditional non-contact temperature measurement capabilities, CaliPile offers motion detection and presence monitoring across short to medium ranges… all from a single and compact unit.
TPMI has become an industry wide established Excelitas functionality. The CaliPile™ series include specially designed electronic circuitry to provide the algorithm and calibration for temperature measurement, digital output and functionality.
This thermopile sensor series provides integrated features that enable measurement as well as presence detection applications. The product line of SMD (surface mount device) thermopiles offer significant space efficiency and streamlined integration.
Featuring a thermopile sensor chip connected to internal circuitry within TO packaging with integral lens options, the CaliPile™ sensor TPiS 1T 1086 L5.5 is suited for highly effective, extended-range, multi-function sensing. Equipped with a highly sensitive thermopile detector, onboard processing electronics and a focusing lens for a narrow field-of-view, the TPiS 1T 1086 L5.5 sensor represents the TO housing version of the award-winning CaliPile™ IR Sensor Series.
The TPiS 1T 1086 L5.5 is calibrated for temperature ranges up to +350 °C in temperature measurement applications. Higher temperature ranges are optionally available. Users may reference the maximum temperature setting as trigger level since the interrupt function will alert users when the level is exceeded.
Featuring a thermopile sensor chip connected to internal circuitry and housed in an ultra-compact SMD package, the CaliPile™ SMD sensor TPiS 1S 1385 is suited for highly effective, near-distance sensing (up to 3 m) without supplemental lensing. This sensor represents Excelitas’ smallest and smartest thermal infrared device to date. To enable these individual functions from a single compact sensor, CaliPile's integrated electronics provide digital conversion and further filtering and processing.
The TPiS 1S 1385 is the SMD version of the award-winning CaliPile Series providing I2C bus communication and signal output. An additional interrupt can serve as a ‘Yes/No’ output for the motion, presence and temperature applications. If the application is high remote temperature sensing, we recommend the TPiS 1S 0185 with a higher dynamic range.
Applications: Remote or Short-range Temperature Measurement; Fast Remote Over-temperature Protection; Near- or Mid-field Human Presence Sensing; Far-field Human Motion Detection; Passive Light-barrier for People Counting; Space-efficient Integration into Smart Home Products; Optimized for Wake-up Battery-operated Thin Devices
Product number:
SW11536
Manufacturer:
Excelitas Technologies
Detector-Filter Combinations
550 nm Band Optimized; Active Area 5.7, 100 mm2; AA Dia. 11.28 mm Round, 2.4 x 2.4 mm Square; Rise Time 0.1 to 1.0 µs; Responsivity 0.025 to 0.27 A/W; Capacitance 100 to 1,500 pF; Package TO-5, BNC, Special
OSI Optoelectronics’ detector-filter combination series incorporates a filter with a photodiode to achieve a tailored spectral response. OSI Optoelectronics offers a multitude of standard and custom combinations. Upon request, all detector-filter combinations can be provided with NIST-traceable calibration data specified in terms of A/W, A/lm, A/lux or A/fc. Among many possible custom combinations, following are a few detector-filter combinations available as standard parts: PIN-10AP is a 1 cm2 active area, BNC package detector-filter combination which duplicates the response of the most commonly available optical aid, the human eye. The eye senses both brightness and color, with response varying as a function of the wavelength. This response curve is commonly known as the CIE curve. The AP filters accurately match the CIE curve to within 4% of the area. PIN-555AP has the same optical characteristics as the PIN10-AP, with an additional operational amplifier in the same package. The package and the operational amplifier combination is identical to UDT-555D detector-amplifier combination (Photop™). PIN-005E-550F uses a low cost broad-bandpass filter with peak transmission at 550 nm to mimic the CIE curve for photometric applications. The pass band is similar to the CIE curve, but the actual slope of the spectral response curve is quite different. This device can also be used to block the near IR portion of the spectral range, 700 nm and above. PIN-005D-254F is a 6 mm2 active area, UV-enhanced photodiode-filter combination which utilizes a narrow bandpass filter peaking at 254 nm. Key Features:
CIE Match (AP Models)
Flat Band Response (DF Models)
Narrow Bandpass Version Available (254 Models)
Hybrid Version With Amplifier Available (PIN-555AP)
BNC Packages Available
Applications: Analytical Chemistry; Spectrophotometry; Densitometers; Photometry/Radiometry; Medical Instrumentation; Liquid Chromatography
Product number:
SW11056
Manufacturer:
OSI Optoelectronics
DigiPile Thermopile Sensors
Digital Output; FoV 5°, 84°, 120°; Sensitivity 85-530 Counts/K; Noise 8 Counts/K; Time Constant 15, 45 ms; Package ISOthermal TO-5, TO-46, SMD 3x3, SMD 3.8x3.8
Excelitas’ DigiPile® thermopile sensors offer leading-edge, non-contact temperature measurement for applications in smart home, smart appliances, intelligent thermostats and HVAC control systems, and ear and forehead thermometers.
TPMI has become an industry wide established Excelitas functionality. The DigiPile series include specially designed electronic circuitry to provide the algorithm and calibration for temperature measurement, digital output and functionality.
Excelitas DigiPile was the first digital output thermopile sensor enabling direct connection to your microprocessor and streamlining integration. The DigiPile line of thermal IR detectors are designed specifically for non-contact temperature measurement and are available in traditional TO metal housings as well as in SMD (Surface Mount Device), offering significant space efficiency and streamlined integration.
The DigiPile family offers the known high sensitivity together with a 17-bit digital output. Within the bit stream the thermopile signal is followed by another signal given by an internal temperature reference diode. The digital output achieves low interference of electric disturbance to enable optimal performance across many applications and integrations.
Excelitas' TPiS 1T 1252B DigiPile sensor features a thermopile sensing chip connected to an internal ADC for amplification and digital conversion. This device engineered into a special TO-46 type housing constriction with Excelitas’ patented ISOthermal design provides improved performance under thermal shock situation.
The Excelitas TPiS 1T 1256 L5.5 DigiPile sensor features a thermopile sensing chip connected to an internal ADC for amplification and digital conversion. All included in TO type housing with integral lens.
Housed in a compact SMD carrier with optical window, the Excelitas TPiS 1S 1051 / 1252 DigiPile sensor series features thermopile sensing chips connected to an internal ADC to provide amplification and digital conversion. The TPiS 1S 1051 combines the smallest thermopile chip with the smallest housing of any Excelitas thermopile sensor. The TPiS 1S 1252 model delivers higher sensitivity in a modestly larger housing with built-in thermopile chip.
Applications: Ear Thermometry; General-purpose Thermometry; Non-contact Temperature Measurements
Product number:
SW11537
Manufacturer:
Excelitas Technologies
Duo-lateral Position Sensing Detectors
OSI Optoelectronics’ super linear duo-lateral position sensing detectors (PSDs) feature state of the art duo-lateral technology to provide a continuous analog output proportional to the displacement of the centroid of a light spot from the center, on the active area. As continuous position sensors, these detectors are unparalleled, offering position accuracies of 99% over 64% of the sensing area. These accuracies are achieved by duo-lateral technology, manufacturing the detectors with two separate resistive layers, one located on the top and the other at the bottom of the chip. One- or two-dimensional position measurements can be obtained using these sensors. A reverse bias should be applied to these detectors to achieve optimum current linearity at high light levels. The maximum recommended power density incident on the duo-lateral PSDs is 1 mW/cm2. For optimum performance, the incident beam should be perpendicular to the active area, with a spot diameter of less than 1 mm. Key Features:
Duo Lateral Structure
One-dimensional (SL Variants) and Two-dimensional (DL, DLS Variants) Versions
High Speed Response
Super Linear
Ultra High Position Accuracy: Up to 99%
Low Capacitance
Low Dark Current
Wide Dynamic Range
High Reliability
Metal or Ceramic Package
Applications: Pulse Detectors; Optical Communications; Bar Code Readers; Optical Remote Control; Medical Equipment; High-speed Photometry; Beam Alignment; Position Sensing; Angle Measurement; Surface Profiling; Height Measurements; Targeting; Guidance Systems; Motion Analysis
Product number:
SW11037
Manufacturer:
OSI Optoelectronics
EOAPD Silicon Avalanche Photodiodes APD
800, 905 nm; Active Area Diameter 230, 500 µm; Responsivity 50, 55 A/W Typ.; Capacitance 1-3 pF Typ.; Package TO-46 Metal Can, LCC3 SMD, LCC6 SMD
EPIGAP Optronic’s EOAPD series of silicon avalanche photodiodes (APD) provide an internal gain mechanism, fast time response, low dark current and high sensitivity in the near infrared region.
These APDs are recommended for applications that require high bandwidth, or where internal gain is needed to overcome high pre-amp noise. In addition, they provide higher sensitivity than standard photodiodes like EPIGAP Optronic’s EOPD series and are ideal for extreme low-level light detection and short pulse detection.
Silicon avalanche photodiodes (Si APDs) are the preferred optical detectors for applications with wavelengths between 400 nm and 1100 nm. Standard versions are available in active area sizes with a diameter of 230 µm and 500 µm and are offered in hermetic TO cans and LCC packages.
These detectors have become the semiconductor equivalent of photomultipliers in many applications including data communication, LIDAR, instrumentation and photon counting.
Key Features:
Product
Peak Wavelength
Active Area
Package
Downloads
EOAPD-800-0-04
800 nm
Ø 230 µm
TO-46 Metal Can
Datasheet
EOAPD-800-0-08
800 nm
Ø 500 µm
TO-46 Metal Can
Datasheet
EOAPD-800-1-01
800 nm
Ø 230 µm
LCC3 SMD
Datasheet
EOAPD-800-1-05
800 nm
Ø 500 µm
LCC3 SMD
Datasheet
EOAPD-800-1-07
800 nm
Ø 500 µm
LCC6 SMD
Datasheet
EOAPD-905-0-12
905 nm
Ø 230 µm
TO-46 Metal Can
Datasheet
EOAPD-905-0-16
905 nm
Ø 500 µm
TO-46 Metal Can
Datasheet
EOAPD-905-1-09
905 nm
Ø 230 µm
LCC3 SMD
Datasheet
EOAPD-905-1-13
905 nm
Ø 500 µm
LCC3 SMD
Datasheet
EOAPD-905-1-15
905 nm
Ø 500 µm
LCC6 SMD
Datasheet
Applications: Data Communication; LIDAR; Instrumentation; Photon Counting; Optical Range Finders; High-speed Optical Communications; Medical Equipment; Barcode Readers
Product number:
SW11569
Manufacturer:
EPIGAP Optronic
EOPC Photodiode Chips
525-1300 nm; Visible, IR; Active Area 0.071-2.32 mm²; Responsivity 0.08-1 A/W; Dark Current 0.005-20 nA
A selection of photodiode chips with sensitivities in the visible and infrared spectral range is available for customer-specific designs. Low dark current, reliability and high sensitivity are the advantages of these products.
The EOPC series includes GaP, Si, InGaAs and AlGaAs photodiode chips. For more standard applications, EPIGAP Optronic’s photodiode components are also available housed in molded plastic, hermetic TO and SMD packages (EOPD series) with high degradation stability and good matching with LEDS.
The supplier’s diversity of chips in terms of wavelength, chip size and polarity allows the selection and adaptation to the specificity of the application. Please contact the AMS Technologies photodiode experts to find the right solution that meets your design project’s requirements. We would like to support you and look forward to your inquiries!
Key Features:
Product
Max. Sensitivity
Package
Active Area
Responsivity
Dark Current
Downloads
EOPC-525-0.86
525 nm
0.57 mm2
0.08 A/W
5 pA
Datasheet
EOPC-880-0.9-1
880 nm
0.72 mm2
0.25 A/W
1 nA
Datasheet
EOPC-940-1.5
940 nm
2.32 mm2
0.6 A/W
8 nA
Datasheet
EOPC-940-0.1
940 nm
0.1 mm2
0.6 A/W
0.05 nA
Datasheet
EOPC-1300-0.3
1300 nm
0.071 mm2
1 A/W
0.3 nA
Datasheet
EOPC-1300-1.0
1300 nm
0.785 mm2
0.95 A/W
20 nA
Datasheet
Applications: Optical Communications; Safety Equipment; Light Barriers; Colorimeters; Currency Authentication; Spectroscopy Equipment; Fluorescence; Optical Power Monitor PD
Product number:
SW11568
Manufacturer:
EPIGAP Optronic
EOPD Molded Plastic, Hermetic TO and SMD Photodiodes
265-1300 nm; UV, Visible, IR; Active Area 0.1-15 mm²; Responsivity 0.18-0.9 A/W; Dark Current 0.00001-2,000 nA; Package 5 mm Molded Plastic, TO-5, TO-46, TO-52, SMD 1206
EPIGAP offers a wide range of photodiodes in the ultraviolet (UV), visible (VIS) and infrared (IR) spectral range. The EOPD series includes GaP photodiodes, Si and SiC photodiodes as well as InGaAs and AlGaAs photodiodes.
Available in 5 mm molded plastic, SMD 1206 and hermetic TO packages (TO-5, TO-46 and TO-52), the EOPD series photodiodes are designed for applications requiring low dark current, high reliability and high sensitivity. Further advantages of the EOPD series photodiodes are degradation stability, good matching with LEDs, no stray light problems and optional miniaturization.
The range of standard products is supplemented by specialties with larger active sensor surfaces or extended sensitivity from 150 nm (low UV) up to 2600 nm in the higher infrared range. For customer-specific designs, EPIGAP Optronic’s photodiode components are also available as bare photodiode chips (EOPC series) with high sensitivity and low dark current. Please contact the AMS Technologies photodiode experts to find the right solution that meets your design project’s requirements. We would like to support you and look forward to your inquiries!
Key Features:
Product
Max. Sensitivity
Package
Active Area
Responsivity
Dark Current
Downloads
EOPD-280-0-0.3-1
265 nm
TO-52
0.1 mm2
0.18 A/W
10 fA
Datasheet
EOPD-525-1-0.9-1
525 nm
SMD 1206
0.73 mm2
0.3 A/W
5 pA
Datasheet
EOPD-525-1-0.9-2
525 nm
SMD 1206
0.73 mm2
0.3 A/W
5 pA
Datasheet
EOPD-940-0-2.52
940 nm
TO-5
5 mm2
0.6 A/W
1 nA
Datasheet
EOPD-940-0-3.57
940 nm
TO-5
10 mm2
0.6 A/W
1 nA
Datasheet
EOPD-940-0-15
940 nm
TO-5
15 mm2
0.6 A/W
1 nA
Datasheet
EOPD-940-0-5.8Q
940 nm
TO-5
4 x 1.44 mm2
0.6 A/W
0.5 nA
Datasheet
EOPD-1300-0-0.1-1
1300 nm
TO-46
0.1 mm2
0.8 A/W
1 µA
Datasheet
EOPD-1300-0-0.8-1
1300 nm
TO-46
0.8 mm2
0.8 A/W
2 µA
Datasheet
EOPD-1300-0-1.0-1
1300 nm
TO-46
1 mm2
0.8 A/W
2 µA
Datasheet
EOPD-1300-0-1.5-3
1300 nm
TO-46
1.5 mm2
0.8 A/W
2 µA
Datasheet
EOPD-1300-1-0.3
1300 nm
SMD 1206
0.3 mm2
0.8 A/W
0.3 nA
Datasheet
EOPD-1300-5-0.3
1300 nm
5 mm
0.3 mm2
0.9 A/W
15 pA
Datasheet
EOPD-1300-0-0.3-1
1300 nm
TO-46
0.3 mm2
0.8 A/W
1 µA
Datasheet
Applications: Universal measurements in the UV, VIS and IR Range; Sterilization Lamp Monitoring; Flame Monitoring; Alarm Systems; Light Barriers; Daylight Sensors; Nearly Vλ-matched Detectors; Colorimeters; Photometers; Spectroscopy Equipment; Fluorescence; Beam Centering; Optical Encoders; High-speed Optical Communications; Optical LAN; Optical Switches; Ethernet Fiber Channel; Safety Equipment; Light Barriers
Product number:
SW11567
Manufacturer:
EPIGAP Optronic
FCI-125G Large Active Area and High-speed Silicon Photodiodes
850 nm Band Optimized; Active Area 0.018 to 0.126 mm2; AA Dia. 0.150 to 0.400 mm; Responsivity 0.36 A/W; Rise Time 35 to 100 ps; Capacitance 0.65 to 1.73 pF; Package TO-46; Fiber Receptacles FC, ST, SC, SMA Available
800nm band optimized Silicon APD, 0.2mm dia AA Si APD in TO can package with Lens
Avalanche Photodiode Active Area Size: Diameter 5.0 mm Optimal Spectral Band: 630 nm Breakdown Voltage: 150- Low Voltage Operation Package Style: TO-8 style
Name (Si Detector/Array); Model; Wavelength range; Detector size; Risetime; Freq. response; Capacitance; Additional information
OSI Optoelectronics' FCI-125G family of large active area and high-speed silicon PIN photodiodes possesses a large sensing area optimized for short-haul optical data communication applications at 850 nm. The photodetectors exhibit high responsivity, wide bandwidth, low dark current and low capacitance at 3.3 V. They are designed to match the most widely used transimpedance amplifiers. The photodiodes can be used in all 850 nm transceivers and GBICs up to 1.25 Gbps applications such as Gigabit Ethernet and Fibre Channel. The chip is isolated in a 3-pin TO-46 package with options of micro lens cap or an AR coated flat window. They are also available in standard fiber receptacles such as FC, ST, SC and SMA. For availability in chip form please contact AMS Technologies. Key Features:
Silicon Photodiodes
High Responsivity
Large Diameter Sensing Area
Low Capacitance @ 3.3V Bias
Applications: High-speed Optical Communications; Single Mode/Multi Mode Fiber Optic Receivers; Gigabit Ethernet/Fibre Channel; SONET/SDH, ATM
Product number:
SW11020
Manufacturer:
OSI Optoelectronics