Skip to main content

FCI-InGaAs-300B1XX Back-illuminated InGaAs Photodiodes

Product information "FCI-InGaAs-300B1XX Back-illuminated InGaAs Photodiodes"

900 to 1700 nm; Active Area 0.07 mm2; AA Dia. 0.3 mm, Pitch 0.5 mm; Responsivity 0.80 to 0.85 A/W; Capacitance 8 to 10 pF; Package Flip Chip Mountable

OSI Optoelectronics’ FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They are available as single element diodes or 4 - or 8- element arrays with an active area of 300 µm each.

These back-illuminated InGaAs photodiodes/arrays are designed to be flip chip mounted (active area facing up), or assembled face down minimizing the overall dimensions. These low inductance, low dark current, and low capacitance back illuminated photodiodes/arrays come with or without ceramic substrates.

Key Features:

  • Back Illumination
  • High Responsivity on Both Front and Back
  • Low Noise
  • Spectral Range 900 to 1700 nm


Applications: High Speed Optical Communications; Multichannel Fiber Optic Receiver; Power Monitoring; Single Mode (SM) Multi Mode (MM) Fiber Optic Receiver; Fast Ethernet, SONET/SDH OC-3/STM-1 ATM; Instrumentation and Analog Receivers

Manufacturer "OSI Optoelectronics"
OSI Optoelectronics is a leading provider of advanced optoelectronics and electronic assemblies. These technical elements are key to enabling critical functions such as analytics and monitoring, test and measurement, communication and tracking, and imaging in a wide variety of industries, including: Aerospace & Defense, Medical & Life Sciences, Automation & Industrial Production and Automotive & Consumer Electronics.
Related links of the manufacturer

Customers also viewed

FCI-InGaAs-QXXX Segmented InGaAs Photodiodes
900 to 1700 nm; Active Area 0.79, 7.07 mm2; AA Dia. 1.0, 3.0 mm; Rise Time 3, 24 ns; Responsivity 0.85 to 0.95 A/W; Capacitance 25, 225 pF; Package TO-5, TO-8 OSI Optoelectronics’ FCI-InGaAs-QXXX series are large active area InGaAs photodiodes segmented into four separate active areas. These photodiodes come in 1 mm (FCI-InGaAs-Q1000) and 3 mm (FCI-InGaAs-Q3000) active area diameter. The FCI-InGaAs-QXXX quad series with high response uniformity and low crosstalk between the elements are ideal for accurate nulling or centering applications as well as beam profiling applications. They exhibit excellent responsivity from 1100 to 1620nm, are stable over time and temperature, and feature fast response times necessary for high speed or pulse operation. FCI-InGaAs-QXXX photodiodes are packaged in isolated TO-5 or TO-8 cans with a broadband double-sided anti-reflective (AR) coated flat window and are also available mounted on ceramic substrate on request. Key Features: High Responsivity Low Noise Spectral Range: 900 to 1700nm Low Crosstalk Wide Field of View Applications: Accurate Nulling or Centering; Position Sensing; Beam Alignment; Beam Profiling
Product number: SW11026
Manufacturer:

FCI-InGaAs-36C InGaAs Photodiodes
910 to 1650 nm; Active Area 0.001 mm2; AA Dia. 0.036 mm; Responsivity 0.75 to 0.85 A/W; Capacitance 0.16, 0.2 pF; Package Special Chip-size OSI Optoelectronics' FCI-InGaAs-36C is an OC-192 (SONET/SDH) capable photosensitive device, exhibiting low dark current and good performance stability. Both anode and cathode contacts appear on the chip's top facet. FCI-InGaAs-36C is an ideal component in high-speed optical data transport applications at 10 Gbps, responding to a spectral envelope that spans from 910 to 1650 nm. Key Features: High Speed: 10 Gbps Data Rates Low Dark Current Front Illuminated High Responsivity: Typ. 0.8 A/W @ 1550 nm Diameter of Light Sensitive Area: 36 µm Low Capacitance Applications: High Speed Optical Communications; OC-192; Optical Networking; Optical Measurement
Product number: SW11046
Manufacturer: