FCI-InGaAs-300B1XX Back-illuminated InGaAs Photodiodes

Name: FCI-InGaAs-300B1XX Back-illuminated InGaAs Photodiodes
Brand: OSI Optoelectronics
SKU: SW11027
Availability: OutOfStock

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Product number: SW11027

Manufacturer: OSI Optoelectronics

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FCI-InGaAs-300B1XX Back-illuminated InGaAs Photodiodes OSI Optoelectronics Datasheet

Product information "FCI-InGaAs-300B1XX Back-illuminated InGaAs Photodiodes"

900 to 1700 nm; Active Area 0.07 mm2; AA Dia. 0.3 mm, Pitch 0.5 mm; Responsivity 0.80 to 0.85 A/W; Capacitance 8 to 10 pF; Package Flip Chip Mountable

OSI Optoelectronics’ FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They are available as single element diodes or 4 - or 8- element arrays with an active area of 300 µm each.

These back-illuminated InGaAs photodiodes/arrays are designed to be flip chip mounted (active area facing up), or assembled face down minimizing the overall dimensions. These low inductance, low dark current, and low capacitance back illuminated photodiodes/arrays come with or without ceramic substrates.

Key Features:

Back Illumination
High Responsivity on Both Front and Back
Low Noise
Spectral Range 900 to 1700 nm

Applications: High Speed Optical Communications; Multichannel Fiber Optic Receiver; Power Monitoring; Single Mode (SM) Multi Mode (MM) Fiber Optic Receiver; Fast Ethernet, SONET/SDH OC-3/STM-1 ATM; Instrumentation and Analog Receivers

Manufacturer "OSI Optoelectronics"

OSI Optoelectronics is a leading provider of advanced optoelectronics and electronic assemblies. These technical elements are key to enabling critical functions such as analytics and monitoring, test and measurement, communication and tracking, and imaging in a wide variety of industries, including: Aerospace & Defense, Medical & Life Sciences, Automation & Industrial Production and Automotive & Consumer Electronics.

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FCI-InGaAs-XXX-ACER InGaAs Photodiodes

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.07 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 0.65 to 20 pF; Package Angled Ceramic Substrate OSI Optoelectronics’ FCI-InGaAs-XXX-ACER series of high-speed InGaAs photodiode on angled ceramic submount with active area diameters of 70, 120, 300, 400 and 500 µm is part of OSI Optoelectronics' high speed IR sensitive photodiode series mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5° greatly reduces the back reflection. FCI-InGaAs-XXX-ACER chips can be epoxy/eutectic mounted onto the angled ceramic substrate. Key Features: 5° Angle Ceramic Low Noise High Responsivity High Speed Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Gigabit Ethernet/Fibre Channel; SONET / SDH, ATM; Diode Laser Monitor; Instrumentation

Product number: SW11030

REQUEST PRICING AND AVAILABILITY

- Get your individual quote.
- Technical compatibility review included.
- Volume discounts available.

No obligation. Direct access to our engineering team.