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Avalanche Photodiode APD Arrays & Quadrants

Product information "Avalanche Photodiode APD Arrays & Quadrants"

C30927 Series: Number of Elements 4; Photo Sensitive Diameter 1.5 mm; Responsivity 15-62 A/W; Capacitance 1 pF; NEP 9-16 fW/√Hz; Spectral Noise Current per Element 0.5 pA/√Hz

Excelitas’ C30927 family of avalanche photodiode (APD) arrays and quadrants utilize the double-diffused “reach-through“ structure. This structure provides ultra-high sensitivity at 400 nm to 1000 nm.

The C30927 quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.

The C30927EH-01, -02 and -03 APD arrays and quadrants are optimized for use at wavelengths of 1060, 900, and 800 nm respectively. Each device type will provide high responsivity and excellent performance when operated within about 50 nm of the specified wavelength.

The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach-through” structure.

The standard versions of the Excelitas C30737 silicon APD array series are available with 16 or 64 elements and provide high responsivity between 500 nm and 1000nm. The standard versions are available either in a compact surface-mount “top-looking” leadless package (C30737MA) or in a BGA type “top-looking” package (C30737GA).

Both packages are ideally suited for high volume, cost-effective applications where a high gain APD is required. The leadless SMD and BGA packaged parts are RoHS-compliant and suitable for reflow soldering.

The C30737MH series of LLC SMD packaged EPI APDs has the smallest footprint SMD packages.

The C30737GA-02-64-90 silicon avalanche photodiode array (Si APD array) provides high responsivity between 500 nm and 1000 nm and is available in a BGA-type “top-looking” package. The C30737GA is ideally suited for high volume, cost-effective applications where a high gain APD is required. Its leadless BGA package is RoHS-compliant and suitable for reflow soldering.

Key Features C30927 Series:

  • High Quantum Efficiency
  • Hermetically Sealed Packages
  • Monolithic Chip With Minimal Dead Space Between Elements
  • Specific Tailored Wavelength Response
  • RoHS Compliant
  • Customization Available Upon Request

Applications C30927 Series: Spectroscopy; Particle Detection; Spot Tracking and Alignment Systems; Adaptive Optics; LiDAR (Light Detection and Ranging)


Please note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden. 

Manufacturer "Excelitas Technologies"

Excelitas’ thermal infrared sensors like thermopiles or pyroelectric IR detectors (PIR) are used for motion detection, presence monitoring, temperature measurement and gas detection. Excelitas’ broad portfolio of sensors, detectors and emitters also includes phototransistors, photodiodes, PIN photodiodes, avalanche photodiodes (APD), ambient light sensors, single photon detectors and many more.


The products can be found in a vast array of applications across automotive, consumer products, defense and aerospace, industrial, medical, safety and security and sciences sectors.


Please note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden. 

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1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD
Active Area Diameter 0.8-3 mm; Responsivity 25-36 A/W; Capacitance 2-10 pF; NEP 14-20 fW/√Hz; Dark Current 50, 100 nA; Package TO-5, TO-8Excelitas’ 1064 nm long-wavelength enhanced Silicon Avalanche Photodiodes (APDs) C30954EH, C30955EH and C30956EH are made using a double-diffused “reach-through” structure. The design of these photodiodes is such that their long-wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties.The C30954EH, C30955EH and C30956EH long-wavelength enhanced APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low-noise, low-capacitance, and fast rise and fall times characteristics.To help simplify many design needs, these APDs are also available in Excelitas’ high-performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. In addition, these APDs are also available with built-in thermo-electric cooler for easier temperature control.The C30954EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 0.8 mm active area diameter in a TO-5 package.The C30955EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 1.5 mm active area diameter in a TO-5 package.The C30956EH large-area, long-wavelength enhanced silicon avalanche Photodiode (Si APD) provides a 3 mm active area diameter in a TO-8 package.Key Features:Active Area Diameter: 0.8, 1.5, 3 mmHigh Quantum Efficiency at 1060 nm: ≤40%Enhanced Long-wave Response: >900 nmFast Response Time: 2 nsWide Operating Temperature RangeLow Capacitance @100 kHz: 2 to 10 pFResponsivity @1060 nm: 25 to 36 A/WDark Current: 50, 100 nASpectral Noise Current: 0.5 pA/√HzNEP @1060 nm: 14 to 20 fW/√HzVop Range: 275 to 425 VHermetically Sealed Packages: TO-5, TO-8RoHS CompliantTEC Option AvailableCustomization Available Upon RequestApplications: Range Finding; LiDAR (Light Detection and Ranging); YAG Laser DetectionPlease note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden. 
Product number: SW11551
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