Avalanche Photodiode APD Arrays & Quadrants

Active Area Diameter 0.5 to 1.5 mm; Responsivity 8 to 128 A/W; Capacitance 1.6 to 4 pF; Package TO-5, TO-8 Flange, TO-18Exelitas‘ series of high-performance, rear-entry, “reach-through” silicon avalanche photodiodes (APDs) offer the best compromise in terms of cost and performance for applications requiring high-speed and low-noise photon detection from 400 nm up to 1100 nm.These Silicon APDs feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. The active area varies from 0.5 mm to 1.5 mm.C30817EH: This silicon avalanche photodiode for general-purpose applications is designed using a double-diffused “reach through” structure. This structure provides high responsivity between 400 to 1100 nm, as well as fast rise and fall times at all wavelengths. Since the fall time characteristics has no “tail”, the responsivity of the device is independent of modulation frequency up to about 200 MHz.C30884EH: This silicon avalanche photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz. This Si APD is made using a double-diffused “reach-through” structure and is optimized for high responsivity at wavelengths of below 1000 nm.C30902BH: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active area diameter. Suitable for biomedical and analytical applications, this Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths.C30902EH: This high-performance silicon avalanche photodiode (APD) has an active area diameter of 0.5 mm and is suitable for biomedical and analytical applications. This Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths.C30902EH-2: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active diameter and a 905 nm bandpass filter in a TO-18 housing. This Si APD is suitable for biomedical and analytical applications.C30902SH: Selected high-performance silicon avalanche photodiodes with extremely low noise and bulk dark current. Suitable for biomedical and analytical applications, this Si APD provides 0.5 mm active diameter in TO-18 housing.C30902SH-2: High-performance, low-noise, selected silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in a TO-18 housing with an inline 905 nm bandpass filter.C30902SH-TC: High-performance, low-noise, selected, single-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing.C30902SH-DTC: High-performance, low-noise, selected, double-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing.C30916EH: Large-area silicon avalanche photodiode with 1.5 mm active area diameter in TO-5 housing.  Part Number Active Diameter Capacitance Rise/Fall Time Dark Current Breakdown Voltage min Breakdown Voltage max Temperature Coefficient Typical Gain Responsivity NEP Package                 830 nm 900 nm 1060 nm     Unit mm pF ns nA V V V/°C   A/W A/W A/W fW/√Hz   C30817EH 0.8 2 2 50 300 475 2.2 120 - 75 - 13 TO-5 C30884E 0.8 4 1 100 190 290 1.1 100 - 63 8 13 TO-5 C30902BH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 Ball lens TO-18 C30902EH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, flat window C30902EH-2 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, built-in 905 nm filter C30902SH 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, flat window C30902SH-2 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, built-in 905 nm filter C30902SH-TC 0.5 1.6 0.5 2 225 - 0.7 250 128 108 - 0.04 pA/√Hz TO-8 flange C30902SH-DTC 0.5 1.6 0.5 1 225 - 0.7 250 128 108 - 0.02 pA/√Hz TO-8 flange C30916EH 1.5 3 3 100 315 490 2.2 80 - 50 12 20 TO-5 Applications: LIDAR; Laser Detection; Range Finding; Small-signal Fluorescence; Photon Counting; Bar Code Scanning; Optical Communications; High-speed Switching Systems; Transit-time Measurements; Biomedical and Analytical Applications; Confocal Microscopes; Spectrophotometers; Luminometers; DNA Sequencers, Particle Sizing Please note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden. 

Active Area Diameter 50-200 µm; Responsivity 9.3 A/W; Capacitance 0.6-2.5 pF; NEP 15-100 fW/√Hz; Dark Current 25-70 nA; Package TO-18, Ceramic Carrier; System Bandwidth 800-2,000 MHzExcelitas’ high-performance InGaAs avalanche photodiode (APD) series C30644, C30645 and C30662 are high-speed, large-area InGaAs/lnP avalanche photodiodes. These devices provide high quantum efficiency, high responsivity and low noise in the spectral range between 1100 nm and 1700 nm. They are optimized for use at a wavelength of 1550 nm, ideally suitable for use in eye-safe laser range finding systems.These high-performance InGaAs APDs are supplied in a hermetically sealed TO-18 package, with the chip mounted close to the window to allow easy interfacing with the optical system, or on a ceramic carrier. The C30645 and C30662 series APD are also offered in the C30659 series of APD receivers with low-noise transimpedance amplifier , as well as built-in thermo-electric cooler (the LLAM series ). Other custom packages are also available on request.Applications: LiDAR; Laser Range Finder; Scanning Video Imager; Confocal Microscope; Free-space Communication; Spectrophotometers; Fluorescence Detection; Luminometer; DNA Sequencer; Particle Sizing Part Number Active Diameter Capacitance System Bandwidth Dark Current Breakdown Voltage Temperature Coefficient Typical Gain Responsivity 1550 nm NEP Package Window Download min max Material Aperture C30662EH 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz TO-18 Glass Large Datasheet C30662EH-1 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz TO-18 Glass Large Datasheet C30662EH-3 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz TO-18 Glass Small Datasheet C30662ECERH 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz Ceramic Carrier N/A N/A Datasheet C30662ECERH-1 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz Ceramic Carrier N/A N/A Datasheet C30645EH 80 µm 1.25 pF 1,000 MHz 35 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 25 fW/√Hz TO-18 Silicon Small Datasheet C30645ECERH 80 µm 1.25 pF 1,000 MHz 35 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 25 fW/√Hz Ceramic Carrier N/A N/A Datasheet C30644EH 50 µm 0.6 pF 2,000 MHz 25 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 15 fW/√Hz TO-18 - - - C30644ECERH 50 µm 0.6 pF 2,000 MHz 25 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 15 fW/√Hz Ceramic Carrier N/A N/A - Please note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden.