1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD

800 nm Band Optimized; Active Area 0.03 to 19.6 mm2; AA Dia. 0.2 to 5.0 mm; Responsivity 20 to 50 A/W; Capacitance 1.5 to 105 pF; Package TO-5, TO-8, TO-52 OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications. Optimized for the 800 nm wavelength band, the APD series is available with five different active area sizes ranging from 0.2 to 5.0 mm in diameter. Depending on active area size, the devices are supplied in TO-5, TO-8 or TO-52 packages. Key Features: High Speed Responsivity / QE High Bandwidth / Fast Response Low Noise Low Bias Voltage Hermetically Sealed TO-Packages Applications: High Speed Optical Communications; Laser Range Finders; Bar Code Readers; Optical Remote Control; Medical Equipment; High Speed Photometry

Active Area Diameter 1-14.1 mm; Responsivity 0.17-1.05 A/W; Capacitance 2.5-450 pF; Peak Wavelength 800-1000 nm; Rise Time <1-15 ns; Dark Current 0.05-<200 nA; Package TO-5, TO-8, TO-18, TO-36, T-1¾, 3-Pin, CustomExcelitas’ silicon PIN photodiodes are available in a wide variety of active areas to accommodate various applications. The PIN structure allows high quantum efficiency and fast response for detection of photons in the 400 nm to 1100 nm range.The C30741 models provide fast response and good quantum efficiency in the spectral range between 300 nm and 1100 nm. Designed for high-speed, high-volume production and cost-sensitive applications, these photodiodes are offered in plastic TO-style packages with a visible blocking filter option.The C308xxEH series are high-quality silicon PIN photodiodes with a 1 to 11 mm active diameter chip in a hermetically sealed TO-5, TO-8 or TO-18 package, designed for the 300 nm to 1100 nm wavelength range. This product series features a broad range of photosensitive surface areas from 0.8 mm² to 100 mm².FFD-100H, FND-100GH and FND-100QH are large-area silicon PIN photodiodes with a 2.5 mm active diameter in a hermetically sealed TO-5 package. These photodiodes provide high responsivity from 400 nm to 1150 nm, with a peak responsivity at 850 or 920 nm, and feature ultra-fast rise and fall time, low NEP and low operating voltage. The FND-100QH has a quartz window, extending the photodiode’s UV response down to 200 nm, while the FFD-200-H features 5.0 mm active diameter in a hermetically sealed TO-8 packageExcelitas’ UV and HUV series are high-quality Si PIN photodiodes in hermetically-sealed TO packages with quartz or glass window, designed for the 220 nm to 1100 nm wavelength region with enhanced operation in the UV range. Low noise detection is achieved by operating the UV series in photovoltaic mode (0 V bias). These PIN photodiodes also feature a wide spectral range and linearity over a wide dynamic range.The YAG series offers an exceptional 0.4 A/W at 1060 nm by using a thick silicon material. Designed with a guard ring to collect current generated outside of the active area, they are the detectors of choice when the entire chip is illuminated by reducing unwanted carriers responsible for noise.Precise beam positioning can be achieved by using Excelitas’ C30665GH-4A, C30845EH, YAG-444x or YAG-555x quadrant PIN photodiodes. They are designed with 4 pie-shaped quadrant sections created via the doping process, thus reducing the "dead" space between each quadrant to almost zero. Each quadrant is then connected to an isolated lead.Applications: LiDAR; Telecom; Instrumentation; Photometry; Laser Power Monitoring; Fiber Optic Test Equipment; High-speed Switching; Spot Tracking; Laser Range Finders; Missile Guidance; Laser Warning SystemsPlease note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden. 

653-1120 nm; Spectral Width 2-10 nm; Output Power 1-19 W (CW), 1.8-90 W (Pulsed); Threshold Current ≤500-3000 mA; Slope Efficiency 0.6-1.0 W/A; Forward Current 1,6-100 AToptica egleyard’s BAL series of multi mode laser diodes are high brightness, broad area laser (BAL) diodes operating multi mode spatially and longitudinally. Within the BAL series, wavelengths between 653 and 1,120 nm are available with output powers between 1 and 19 W in cw mode or even up to 90 W in pulse mode.Its high pulse energy and fast rise time makes the BAL series of multi mode laser diodes the laser source of choice for high resolution sensing applications under harsh environmental conditions. Stripe widths from 100 to 400 µm are available to optimize beam structure and power for the application.Toptica eagleyard’s hermetically sealed TO packages as well as C-mount or fiber pigtailed flat packages make such laser diodes ideally suited for applications with either demanding size restrictions or with preferred fiber pigtail handling. The output power of the fiber of a cost efficient pigtailed single emitter starts at 1 W and reaches up to 90 W peak in pulsed mode.Key Features:Broad Area, Edge Emitting Laser DiodesBroad Wavelength Range: 653 to 1,120 nmHigh Output Power: 1 to 19 W (CW) and 1.8 to 90 W (Pulsed)Hermetically SealedFast/Slow Axis CollimationTyp. Spectral Width: 2 to 10 nmStripe Width: 100 to 400 µmCavity Length: 1 to 4 mmBeam Divergence: Parallel (Slow Axis) 1.5° to 10° (FWHM), Perpendicular (Fast Axis) 0.6° to 30° (FWHM)Extreme Operating Temperature Range: -60 to +90 °CPackages: C-Mount, 9 mm TO TO with Thread, Integrated FAC/SAC, Flatpack With Window ProductWavelengthOutput PowerOperational ModePackageSpecificsBAL-0653-01000-1510-CMT02-0000653 nm1 WCWC-Mount 2 mmPowerful, High Brightness, Longitudinally Multi ModeBAL-0670-00001-1510-SOT23-0010670 nm1.5 WPulsedTO-Can 9 mmSuitable for Harsh EnvironmentsBAL-0670-00004-1510-SOT23-0010670 nm4 WPulsedTO-Can 9 mmSuitable for Harsh EnvironmentsBAL-0670-00010-1510-SOT23-0016670 nm10 WPulsedTO-Can 9 mmSuitable for Harsh EnvironmentsBAL-0808-00005-2013-SOT12-0010808 nm6 WPulsedTO-Can 9 mmSuitable for Harsh EnvironmentsBAL-0808-08000-4020-CMT04-0000808 nm8 WCWC-Mount 4 mmSuitable for Harsh EnvironmentsBAL-0808-00020-4020-FLW01-0010808 nm20 WPulsedFlatpack With WindowSuitable for Harsh EnvironmentsBAL-0808-00025-2013-SOT23-0016808 nm25 WPulsedTO-Can 9 mmSuitable for Harsh EnvironmentsBAL-0905-00010-1040-TOE02-0010905 nm12 WPulsedTO With ThreadSuitable for Harsh EnvironmentsBAL-0905-00050-1040-TOE22-0010905 nm50 WPulsedTO With ThreadSuitable for Harsh EnvironmentsBAL-0905-00090-1040-TOE22-0010905 nm90 WPulsedTO With ThreadSuitable for Harsh EnvironmentsBAL-0980-08000-4020-CMT04-0000980 nm8 WCWC-Mount 4 mmSuitable for Harsh EnvironmentsBAL-1064-08000-4020-CMT04-00001064 nm8 WCWC-Mount 4 mmSuitable for Harsh EnvironmentsApplications: Time-of-Flight LIDAR; Laser Sensing in Missiles; Laser Ignitors of Optopyro Elements for Satellites or Launchers; Active Protection Systems; Material Processing; Medical; Solid-state Laser PumpingPlease note that TOPTICA eagleyard products are not availble from us in Denmark, Finland, Iceland, Norway, and Sweden.