Skip to main content

1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD

Product information "1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD"

Active Area Diameter 0.8-3 mm; Responsivity 25-36 A/W; Capacitance 2-10 pF; NEP 14-20 fW/√Hz; Dark Current 50, 100 nA; Package TO-5, TO-8

Excelitas’ 1064 nm long-wavelength enhanced Silicon Avalanche Photodiodes (APDs) C30954EH, C30955EH and C30956EH are made using a double-diffused “reach-through” structure. The design of these photodiodes is such that their long-wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties.

The C30954EH, C30955EH and C30956EH long-wavelength enhanced APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low-noise, low-capacitance, and fast rise and fall times characteristics.

To help simplify many design needs, these APDs are also available in Excelitas’ high-performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. In addition, these APDs are also available with built-in thermo-electric cooler for easier temperature control.

The C30954EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 0.8 mm active area diameter in a TO-5 package.

The C30955EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 1.5 mm active area diameter in a TO-5 package.

The C30956EH large-area, long-wavelength enhanced silicon avalanche Photodiode (Si APD) provides a 3 mm active area diameter in a TO-8 package.

Key Features:

  • Active Area Diameter: 0.8, 1.5, 3 mm
  • High Quantum Efficiency at 1060 nm: ≤40%
  • Enhanced Long-wave Response: >900 nm
  • Fast Response Time: 2 ns
  • Wide Operating Temperature Range
  • Low Capacitance @100 kHz: 2 to 10 pF
  • Responsivity @1060 nm: 25 to 36 A/W
  • Dark Current: 50, 100 nA
  • Spectral Noise Current: 0.5 pA/√Hz
  • NEP @1060 nm: 14 to 20 fW/√Hz
  • Vop Range: 275 to 425 V
  • Hermetically Sealed Packages: TO-5, TO-8
  • RoHS Compliant
  • TEC Option Available
  • Customization Available Upon Request

Applications: Range Finding; LiDAR (Light Detection and Ranging); YAG Laser Detection

Manufacturer "Excelitas Technologies"
Related links of the manufacturer

Similar products

4X4D Two-dimensional Silicon Array Detectors
4x4 Array Detector; 810, 850 nm Band Optimized; Active Area 1,0, 1.96 mm2; Responsivity 0.35 to 0.4 A/W; Capacitance 35, 75 pF; Package Ceramic LCC OSI Optoelectronics’ 4X4D series comprise 4 by 4 arrays of super blue enhanced photodetectors. Two models are available: PIN-4X4D silicon array detectors feature an active area of 1.96 mm2 and a peak responsivity wavelength of 850 nm, while UDT-4X4D silicon array detectors with an active area of 1.0 mm2 show peak responsivity at 810 nm. OSI Optoelectronics’ proprietary design provides virtually complete isolation between all of the 16 elements. The standard LCC package allows easy integration into your surface mount applications. Numerous applications include ratio and scattering measurements, as well as Position Sensing. For custom packages, special electro-optic requirements, or to order these parts in die form, please contact AMS Technologies. Key Features: 4x4 Array Detector Active Area: 1.0x1.0 mm (UDT-4X4D), 1.4x1.4 mm (PIN-4X4D) Peak Responsivity Wavelength: 810 (UDT-4X4D), 850 nm (PIN-4X4D) Very Fast Response Extremely Low Cross-talk Surface Mount Design Package: Ceramic LCC Applications: Ratio and Scattering Measurements; Position Sensing
Product number: SW11021
Manufacturer:
A2C-16-1.57 Multi-channel X-Ray Detector
540, 930 nm Band Optimized; 16 Elements; Active Area 2.35 mm2 per Element; AA Dimensions 2.00 x 1.18 mm per Element, Pitch 1.57 mm; Rise Time 0.1 µs; Responsivity 0.31, 0.59 A/W; Capacitance 28 pF; Package Special PCB OSI Optoelectronics' A2C-16-1.57 multi-channel X-ray detector consists 16 individual elements grouped together in an array and mounted on PCB. For X-ray or gamma-ray application, these multi-channel detectors offer scintillator-mounting options: BGO, CdWO4 or CsI(TI). BGO (Bismuth Germanate) acts as an ideal absorber: it is widely accepted in high-energy detection applications. CdWO4 (Cadmium Tungstate) exhibits sufficiently high light output, helping improve spectrometry results. CsI (Cesium Iodide) is another high energy absorber, providing adequate resistance against mechanical shock and thermal stress. When coupled to scintillators, these silicon arrays map any medium or high radiation energy over to visible spectrum via scattering effect. Also, their specially designed PCB allows end-to-end connectivity. Multiple arrays can be deployed in situations that call for larger scale assembly. Key Features: Scintillator Platform 5 V Bias Channel Spacing Variety Applications: Position Sensors; Multi-channel Gamma Counting; X-ray Security Systems
Product number: SW11074
Manufacturer:
Ambient Light Sensors
Active Area 0.191-37.7 mm²; Radiometric Sensitivity 0.034-7 A/W; Capacitance 0.15-11 nF; Spectral Range 330-720 nm; Typ. Peak Wavelength 555, 580, 585 nm; NEP 11, 13, 53 fW/√Hz; Max. Dark Current 0.02-50 nA; Package TO-8, TO-46, T-1¾ Flat Excelitas offers ambient light sensors that provide an easy solution for applications requiring a response similar to the human eye, making them ideal when the response should only be influenced by visible light. Within this product family, we offer two types of Excelitas devices: IR-filtered silicon photodiodes and IR-filtered silicon phototransistors. These devices contribute in various applications to energy conservation in both fixed and portable devices. They are available in a number of standard packages, including surface mount for automated assembly. Applications: Interior and Exterior Light Switching (Dusk/Dawn Switch); Interior and Exterior Light Control (Dimming); Automotive Headlight Dimmer; Display Contrast Control; Energy Conservation
Product number: SW11560
Manufacturer:
APD Silicon Avalanche Photodiodes
800 nm Band Optimized; Active Area 0.03 to 19.6 mm2; AA Dia. 0.2 to 5.0 mm; Responsivity 20 to 50 A/W; Capacitance 1.5 to 105 pF; Package TO-5, TO-8, TO-52 OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications. Optimized for the 800 nm wavelength band, the APD series is available with five different active area sizes ranging from 0.2 to 5.0 mm in diameter. Depending on active area size, the devices are supplied in TO-5, TO-8 or TO-52 packages. Key Features: High Speed Responsivity / QE High Bandwidth / Fast Response Low Noise Low Bias Voltage Hermetically Sealed TO-Packages Applications: High Speed Optical Communications; Laser Range Finders; Bar Code Readers; Optical Remote Control; Medical Equipment; High Speed Photometry
Product number: SW11018
Manufacturer:
APDXX-8-150 Silicon Avalanche Photodiodes
800 nm Band Optimized; Active Area 0.003 to 1.77 mm2; AA Dia. 0.2 to 1.5 mm; Responsivity 50 A/W; Capacitance 1.5 to 10 pF; Package TO-5, TO-52 OSI Optoelectronics introduces its APDXX-8-150 “800 nm optimized” silicon avalanche photodiode (APD) series, available in hermetic metal packages. Devices offer lower noise and high sensitivity over bandwidths up to 1 GHz. APDXX-8-150 devices exhibit a low temperature coefficient of 0.45 V/˚C. OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. The APDXX-8-150 series is available with different active area sizes ranging from 0.2 to 1.5 mm in diameter as well as with flat windows or ball lenses for optical fiber applications. Depending on active area size, the devices are supplied in TO-5, or TO-52 packages. Key Features: Active Area Diameters: 0.2, 0.5, 1.0, 1.5 mm Low Temperature Coefficient: 0.45 V/°C High Sensitivity Low Noise High Bandwidth Applications: Optical Fiber Communication; Laser Range Finder; High-speed Photometry
Product number: SW11047
Manufacturer:
Avalanche Photodiode APD Arrays & Quadrants
C30927 Series: Number of Elements 4; Photo Sensitive Diameter 1.5 mm; Responsivity 15-62 A/W; Capacitance 1 pF; NEP 9-16 fW/√Hz; Spectral Noise Current per Element 0.5 pA/√Hz Excelitas’ C30927 family of avalanche photodiode (APD) arrays and quadrants utilize the double-diffused “reach-through“ structure. This structure provides ultra-high sensitivity at 400 nm to 1000 nm. The C30927 quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight. The C30927EH-01, -02 and -03 APD arrays and quadrants are optimized for use at wavelengths of 1060, 900, and 800 nm respectively. Each device type will provide high responsivity and excellent performance when operated within about 50 nm of the specified wavelength. The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach-through” structure. The standard versions of the Excelitas C30737 silicon APD array series are available with 16 or 64 elements and provide high responsivity between 500 nm and 1000nm. The standard versions are available either in a compact surface-mount “top-looking” leadless package (C30737MA) or in a BGA type “top-looking” package (C30737GA). Both packages are ideally suited for high volume, cost-effective applications where a high gain APD is required. The leadless SMD and BGA packaged parts are RoHS-compliant and suitable for reflow soldering. The C30737MH series of LLC SMD packaged EPI APDs has the smallest footprint SMD packages. The C30737GA-02-64-90 silicon avalanche photodiode array (Si APD array) provides high responsivity between 500 nm and 1000 nm and is available in a BGA-type “top-looking” package. The C30737GA is ideally suited for high volume, cost-effective applications where a high gain APD is required. Its leadless BGA package is RoHS-compliant and suitable for reflow soldering. Key Features C30927 Series: High Quantum Efficiency Hermetically Sealed Packages Monolithic Chip With Minimal Dead Space Between Elements Specific Tailored Wavelength Response RoHS Compliant Customization Available Upon Request Applications C30927 Series: Spectroscopy; Particle Detection; Spot Tracking and Alignment Systems; Adaptive Optics; LiDAR (Light Detection and Ranging)
Product number: SW11549
Manufacturer:
BI-SMT Back Illuminated Si Photodiodes
920 nm Band Optimized; Active Area 5.76 to 88.36 mm2; AA Dimensions 2.4 x 2.4 to 9.4 x 9.4 mm; Rise Time 10, 20 ns; Responsivity 0.30 to 0.59 A/W; Capacitance 50 to 900 pF; Package SMT OSI Optoelectronics’ BI-SMT product series are single-channel back-illuminated photodiodes specifically designed to minimize “dead” areas at the edge of the device. Each device is designed on a package with dimensions very similar to the chip itself. This design allows for multiple detectors to be arranged in a tiled format and offers ease of coupling to a scintillator. Key Features: Chip Size Package Easy Coupling to Scintillator Patterned Electrodes Applications: X-Ray Inspection; Computed Tomography; General Industrial Use
Product number: SW11059
Manufacturer:

Customers also viewed

Transmission Probes
Wavelength range 200-2500 nm; Pressure Probe Head 10 bar @ 25°C; Connector Type SMA-905Transmission dip probes are designed for on-line and inline absorbance measurements in fluids. By dipping or permanently mounting the probe end into the fluid, absorbance can be measured. Explore our range of transmission dip probes below.Transmission ProbesTransmission dip probes are used for on-line and inline absorbance measurements in fluids. By dipping or permanently mounting the probe end into the fluid, absorbance can be measured. A standard SMA-905 connector couples light into a fiber bundle, typically consisting of six fibers (other configurations available upon request). The light is transmitted to the probe end, where it crosses a predetermined gap and is reflected against a diffuse white reflective material back onto the receiving read fiber, which is coupled to a spectrometer on the second leg of the probe. The read fiber is centrally placed within the illumination fiber bundle to provide optimal collection efficiency. Both bundles are housed in flexible stainless steel jacketing, and the probe tip is also made of stainless steel. At the mid-point of the assembly, a ferrule splits the fibers into their respective legs (illumination and read), which are terminated in SMA-905 connectors.Mini Transmission ProbesFor absorption measurements in miniaturized centrifuge tubes or vessels, Avantes offers the mini transmission dip probe. It features a miniaturized tip that is 130mm long and 3.2mm in diameter. The mini transmission dip probe has a fixed optical path length of 5 or 10 mm. It is available in three versions: one for UV/VIS (200-800 nm) measurements, one for VIS/NIR (350-2500 nm), and one for UV/VIS/NIR (250-2500 nm). For best results below 240 nm, solarization-resistant fiber (-SR) is recommended. The probe features Avantes ME, chrome-plated brass, and jacketing. Optionally, the probe can be configured with a longer stainless steel or Hastelloy® tip or other jacketing options (MS, BX, or PVC). It has two SMA connectors (FC/PC also available) for convenient coupling to the Avantes line of spectrometers and light sources.Mini Transmission Dip Probes with Variable Path LengthThis fiber-optic probe features a variable and adjustable path length for more flexibility during absorbance measurements in fluids. The gap between the fiber and the diffuser can be set anywhere between 0.25 and 10 mm. A standard SMA-905 connector couples light into a fiber bundle, typically consisting of six fibers (other configurations available upon request). The light is transmitted to the probe end, where it crosses the predetermined gap and is reflected against a diffuse white reflective material back onto the receiving read fiber, which is coupled to a spectrometer on the second leg of the probe. The read fiber is centrally placed within the illumination fiber bundle to provide optimal collection efficiency. Both bundles are housed in flexible stainless steel jacketing, and the probe tip is also made of stainless steel. At the mid-point of the assembly, a ferrule splits the fibers into their respective legs (illumination and read), which are terminated in SMA-905 connectors.Applications: On-line and in-line absorbance measurements in fluids
Product number: SW12010
Manufacturer:

€0.00*
APD Silicon Avalanche Photodiodes
800 nm Band Optimized; Active Area 0.03 to 19.6 mm2; AA Dia. 0.2 to 5.0 mm; Responsivity 20 to 50 A/W; Capacitance 1.5 to 105 pF; Package TO-5, TO-8, TO-52 OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications. Optimized for the 800 nm wavelength band, the APD series is available with five different active area sizes ranging from 0.2 to 5.0 mm in diameter. Depending on active area size, the devices are supplied in TO-5, TO-8 or TO-52 packages. Key Features: High Speed Responsivity / QE High Bandwidth / Fast Response Low Noise Low Bias Voltage Hermetically Sealed TO-Packages Applications: High Speed Optical Communications; Laser Range Finders; Bar Code Readers; Optical Remote Control; Medical Equipment; High Speed Photometry
Product number: SW11018
Manufacturer:
Ambient Light Sensors
Active Area 0.191-37.7 mm²; Radiometric Sensitivity 0.034-7 A/W; Capacitance 0.15-11 nF; Spectral Range 330-720 nm; Typ. Peak Wavelength 555, 580, 585 nm; NEP 11, 13, 53 fW/√Hz; Max. Dark Current 0.02-50 nA; Package TO-8, TO-46, T-1¾ Flat Excelitas offers ambient light sensors that provide an easy solution for applications requiring a response similar to the human eye, making them ideal when the response should only be influenced by visible light. Within this product family, we offer two types of Excelitas devices: IR-filtered silicon photodiodes and IR-filtered silicon phototransistors. These devices contribute in various applications to energy conservation in both fixed and portable devices. They are available in a number of standard packages, including surface mount for automated assembly. Applications: Interior and Exterior Light Switching (Dusk/Dawn Switch); Interior and Exterior Light Control (Dimming); Automotive Headlight Dimmer; Display Contrast Control; Energy Conservation
Product number: SW11560
Manufacturer:
SPOT DPSS Lasers
Actively Q-switched DPSS laser; pulse width <2 ns; repetition rate up to 50 kHz; very low jitter; 1064 nm and harmonics down to 355 nm Utilising advanced technology, SPOT actively Q-switched DPSS lasers provide a short pulse output (pulse widths <2 ns) at repetition rates from single shot up to >50 kHz with very low jitter. The series features fundamental YAG wavelength at 1064 nm and harmonics down to 355 nm. The compact design enables the lasers to be easily integrated into scientific instrumentation. Applications include laser induced fluorescence, time resolved fluorescence, micromachining, biotechnology, plasma generation, remote sensing, photo acoustic imaging, MALDI mass spectrometry and MALDI imaging. SPOT laser systems consist of a laser head with a separate power supply unit. Both units are connected with a cable which is hard wired into the laser head while having a 37 way ‘D’ connector for connection to the power supply unit. The SPOT DPSS laser series feature simple, user-friendly control with the minimum of user defined parameters. The systems are designed as fixed power level devices under automatic operation, or power can be varied by adjusting the pump diode current via RS232 interface. Specifications Wavelength: 1064 nm; 532 nm; 355 nm Pulse Energy: up to 50 µJ Pulse width: <2 ns Low jitter: <±1 ns Repetition rate: up to 50 kHz Spatial Mode: TEM00 M2 < 1.2 Features Low pulse width and jitter RS232 controllable User interface (interlock, on/off keyswitch etc.) Manual safety shutter Active current limit Auto power-up sequence: warmup, current mode Laser diode protection circuitry Monitoring the following parameters:      - Diode current limit, diode current setpoint, actual diode current      - Diode & chipset temperature setpoint, actual temperature Diode-on-time LCD hour counter (internal) Overtemperature Sensors for heatsink and laser-head Applications: Photoacoustic Microscopy; MALDI Mass Spectrometry (Matrix Assisted Laser Desorption Ionisation); Fluorescence Lifetime Imaging (FLIM); Dye Laser Pumping
Product number: SW10293
Manufacturer:
4X4D Two-dimensional Silicon Array Detectors
4x4 Array Detector; 810, 850 nm Band Optimized; Active Area 1,0, 1.96 mm2; Responsivity 0.35 to 0.4 A/W; Capacitance 35, 75 pF; Package Ceramic LCC OSI Optoelectronics’ 4X4D series comprise 4 by 4 arrays of super blue enhanced photodetectors. Two models are available: PIN-4X4D silicon array detectors feature an active area of 1.96 mm2 and a peak responsivity wavelength of 850 nm, while UDT-4X4D silicon array detectors with an active area of 1.0 mm2 show peak responsivity at 810 nm. OSI Optoelectronics’ proprietary design provides virtually complete isolation between all of the 16 elements. The standard LCC package allows easy integration into your surface mount applications. Numerous applications include ratio and scattering measurements, as well as Position Sensing. For custom packages, special electro-optic requirements, or to order these parts in die form, please contact AMS Technologies. Key Features: 4x4 Array Detector Active Area: 1.0x1.0 mm (UDT-4X4D), 1.4x1.4 mm (PIN-4X4D) Peak Responsivity Wavelength: 810 (UDT-4X4D), 850 nm (PIN-4X4D) Very Fast Response Extremely Low Cross-talk Surface Mount Design Package: Ceramic LCC Applications: Ratio and Scattering Measurements; Position Sensing
Product number: SW11021
Manufacturer:
FCI-H622M-InGaAs-75 InGaAs Photodiode-Amplifier Hybrid
1100 to 1650 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm; Responsivity 16 V/mW; Transimpedance 18 kΩ; Package TO-46 OSI Optoelectronics’ FCI-H622M-InGaAs-75 is a high-speed 75 µm InGaAs photodetector integrated with a wide dynamic range transimpedance amplifier (TIA). Combining the detector with the TIA in a hermetically sealed 4-pin TO-46 package provides ideal conditions for high-speed signal detection and amplification. Low capacitance, low dark current and high responsivity of the detector, along with low noise characteristics of the integrated TIA, give rise to excellent sensitivity. In practice, these devices are ideal for datacom and telecom applications. Cost-effective TO-46 packages come standard with a lensed cap for design simplification, or with a broadband double-sided anti-reflective (AR) coated flat window. The FCI-H622M-InGaAs-75 is also offered with FC, SC, ST and SMA receptacles. Key Features: Low Noise Transimpedance Amplifier High Bandwidth Wide Dynamic Range Single +3.3 V Power Supply Spectral Range 1100 to 1650 nm Differential Output Applications: High-speed Optical Communications; ATM; SONET OC-3 / OC-12; SDH STM-1 / STM-4; Optical Receivers
Product number: SW11045
Manufacturer:
USB3.0 1.2MP CMOS Cameras
1.2 MP; Pixel Size 3.75x3.75 µm; Sensor Size 1/3” Diagonal; Colour or B/W; 60-380 fps; Resolution 8, 12 bit; USB 3.0; Global Shutter; Progressive Scan; Dynamic Range 64 dB; Board-level or Enclosed Mightex’s ultrafast USB 3.0, 1.2 MP, CMOS cameras are designed for applications that require high-speed and/or multiple cameras. These cameras are equipped with a super-speed USB3.0 interface that can deliver a transfer rate of up to 400 Mbytes per second, which is 10 times the USB2.0 speed, 3.5 times GigE speed and 6 times Firewire-800 speed. With this series’ 1.2 Megapixel global shutter CMOS sensor, the frame rate can be as high as 44 fps in full resolution and up to 300 fps using ROI mode. Mightex USB 3.0 cameras are optimized for machine-vision applications, and they can also be used for a wide variety of other applications such as digital microscopy and medical imaging, where quality, ease of use, and cost-effectiveness are crucial. These cameras have external trigger-in, strobe-out, and a powerful camera engine that supports multiple cameras. In addition, a user-friendly GUI based application software and an SDK are provided for custom software development. USB3.0 1.2 MP CMOS cameras are available as colour (SMN-C012-U/SME-C012-U) or B/W (SMN-B012-U/SME-B012-U) versions and can be ordered as “naked” board-level device (SMN) or pre-mounted in an enclosure (SME). Note: Board-level cameras are designed for OEM applications, when a system-level enclosure is usually provided. In order to avoid electro-static discharge (ESD) related damages, workforce handling a board-level camera should be properly grounded. ESD related damages are considered as mishandling and are not covered by product warranty. For lab use, it is strongly recommended to choose an enclosed camera instead of a board-level one. Key Features: Colour or Black&White (B/W, Monochrome) Board-level or Enclosed Versions Available Ultra-compact Interface: Super-speed USB 3.0 (5 Gbit/s), No Need for External Power Supply Support Simultaneous Image Capturing From Multiple Cameras Active Imaging Pixels: 1.2 MP (1280x960) Pixel Size: 3.75 x 3.75 µm Sensor Size (Diagonal): 1/3” Global Shutter Dynamic Range: 64 dB Gray Level: 8, 12 bit Progressive Scanning System Frame Rate: 60 to 380 fps 4-pin GPIOs Simpler Data Processing Digital Output, No Need for Frame Grabber Custom Programmable With SDK Provided DirectShow & TWAIN Drivers External and Software Trigger Strobe Output for External Flash ROI and Pixel Skipping/Binning OEM Versions Available Applications: Machine Vision Systems; Medical Imaging and Engineering; Semiconductor Equipment; Document Scanners; Digital Microscopy; Web Camera and Security Video; Test Instruments; High-quality ID Photo Capture; 2D Barcode Readers
Product number: SW11208
Manufacturer: