APD Silicon Avalanche Photodiodes
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Product information "APD Silicon Avalanche Photodiodes"
800 nm Band Optimized; Active Area 0.03 to 19.6 mm2; AA Dia. 0.2 to 5.0 mm; Responsivity 20 to 50 A/W; Capacitance 1.5 to 105 pF; Package TO-5, TO-8, TO-52
OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications.
Optimized for the 800 nm wavelength band, the APD series is available with five different active area sizes ranging from 0.2 to 5.0 mm in diameter. Depending on active area size, the devices are supplied in TO-5, TO-8 or TO-52 packages.
Key Features:
- High Speed Responsivity / QE
- High Bandwidth / Fast Response
- Low Noise
- Low Bias Voltage
- Hermetically Sealed TO-Packages
Applications: High Speed Optical Communications; Laser Range Finders; Bar Code Readers; Optical Remote Control; Medical Equipment; High Speed Photometry
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Proof test: 200 kpsi. Bend insensitive, high index single mode specialty optical fibers. Key optical specifications Operating Wavelength (nm) > 980 Cutoff Wavelength (nm) 920 ± 50 Maximum Attenuation (dB/km) 2.1 @ 980 nm 1.5 @ 1060 nm Mode-field Diameter (µm) 5.9 ± 0.3 @ 980 nm 6.2 ± 0.3 @ 1060 nm Key geometric, mechanical and environmental specifications Cladding Outside Diameter (µm) 125 ± 0.5 Coating Outside Diameter (µm) 245 ± 10 Core-to-Cladding Offset (µm) ≤ 0.3 Standard Lengths** 500 m, 1 km, 2 km, 5 km, 10 km Proof Test (kpsi) 200 Operating Temperature (°C) -60 to 85 Performance characterizations* Nominal Delta (%) 0.48 Numerical Aperture 0.14 Refractive Index Value Core 1.464 @ 651 nm Dispersion (ps/nm/km) -53 @ 980 nm -38 @ 1060 nm Core Diameter (µm) 5.3 * Values in this table are nominal or calculated values
900 to 1700 nm; Active Area 0.79, 7.07 mm2; AA Dia. 1.0, 3.0 mm; Rise Time 3, 24 ns; Responsivity 0.85 to 0.95 A/W; Capacitance 25, 225 pF; Package TO-5, TO-8 OSI Optoelectronics’ FCI-InGaAs-QXXX series are large active area InGaAs photodiodes segmented into four separate active areas. These photodiodes come in 1 mm (FCI-InGaAs-Q1000) and 3 mm (FCI-InGaAs-Q3000) active area diameter. The FCI-InGaAs-QXXX quad series with high response uniformity and low crosstalk between the elements are ideal for accurate nulling or centering applications as well as beam profiling applications. They exhibit excellent responsivity from 1100 to 1620nm, are stable over time and temperature, and feature fast response times necessary for high speed or pulse operation. FCI-InGaAs-QXXX photodiodes are packaged in isolated TO-5 or TO-8 cans with a broadband double-sided anti-reflective (AR) coated flat window and are also available mounted on ceramic substrate on request. Key Features: High Responsivity Low Noise Spectral Range: 900 to 1700nm Low Crosstalk Wide Field of View Applications: Accurate Nulling or Centering; Position Sensing; Beam Alignment; Beam Profiling
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