Hybrid Optical APD Receiver Modules

Product number: SW11547

Manufacturer: Excelitas Technologies

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Hybrid Optical APD Receiver Modules Excelitas Datasheet

Product information "Hybrid Optical APD Receiver Modules"

Active Area Diameter 0.08-1.1 mm; Responsivity 90- 3,000 kV/W; NEP 10-220 fW/√Hz; Package TO-8, TO-8 Flange, Custom; System Bandwidth 50, 200 MHz

Excelitas’ hybrid optical APD receiver modules are comprised of a photodetector (PIN or APD) and a transimpedance amplifier in the same hermetically sealed package. Having both an amplifier and photodetector in the same package allows low-noise pickup from the surrounding environment and reduces parasitic capacitance from interconnect allowing lower-noise operation.

The C30950EH is a silicon avalanche photodiode (Si APD) amplifier module with 50 MHz system bandwidth and includes Excelitas’ C30817 silicon avalanche photodiode (APD) . With a useful diameter of 0.8 mm, the C30950EH provides good response between 400 and 1100 nm and is supplied in a modified 12-lead TO-8 package. The C30950EH is the cost-effective, pin-compatible alternative to the C30659 series employing a bipolar amplifier.

The C30659 series includes a silicon (Si) or InGaAs avalanche photodiode (APD) with a hybrid preamplifier, in the same hermetically sealed TO-8 package, to allow for ultra-low noise operation, and features an inverting amplifier design with an emitter follower used as an output buffer stage. The Si APDs used in these devices are the same as used in Excelitas’ C30817EH, C30902EH , C30954EH and C30956EH products , while the InGaAs APDs are used in Excelitas’ C30645EH and C30662EH products . These detectors with 50 or 200 MHz system bandwidth provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low-noise GaAs FET front end designed to operate at higher transimpedance than Excelitas’ standard C30950 Series.

The C30659-UV-1 includes a UV-enhanced silicon avalanche photodiode (Si APD) providing very good response between 400 nm and 950 nm.

The LLAM series of fully RoHS-compliant APD modules features an avalanche photodiode chip, thermoelectric (TE) cooler, and preamplifier, all in a single hermetically-sealed, modified 12-lead TO-66 flange package. The modules are easy to install and offer additional heat sinking. The use of a TE-cooler ensures lower noise and constant responsivity over a +5 to +40 °C ambient temperature range. The LLAM Series modules with 50 or 200 MHz system bandwidth are designed for the detection of high-speed, low-light analog signals.

Applications: Laser Range Finder; Video Scanning Imagers; High-speed Analytical Instrumentation; Free-space Communication; UV-VIS-NIR Light Sensing; Distributed Temperature Sensing

Part Number	Detector	Active Diameter	Bandwidth	Responsivity				NEP	Output Voltage Swing, 50 Ω	Package	Download
				500 nm	900 nm	1060 nm	1550 nm
C30659-UV-1	UV-Enhanced	1.1 mm	50 MHz	3,000 kV/W	-	-	-	10 fW/√Hz	0.9 V	TO-8	Datasheet
C30659-900-R5BH	C30902	0.5 mm	200 MHz	-	400 kV/W	-	-	40 fW/√Hz	0.9 V	TO-8	Datasheet
C30659-900-R8AH	C30817	0.8 mm	50 MHz	-	3,000 kV/W	-	-	12 fW/√Hz	0.9 V	TO-8	Datasheet
C30659-1060-R8BH	C30954	0.8 mm	200 MHz	-	370 kV/W	200 kV/W	-	100 fW/√Hz	0.9 V	TO-8	Datasheet
C30659-1060E-R8BH	C30954	0.8 mm	200 MHz	-	370 kV/W	200 kV/W	-	100 fW/√Hz	0.9 V	TO-8	Datasheet
C30659-1060-3AH	C30956	3 mm	50 MHz	-	450 kV/W	280 kV/W	-	90 fW/√Hz	0.9 V	TO-8	Datasheet
C30659-1550-R08BH	C30645	0.08 mm	200 MHz	-	-	-	90 kV/W	220 fW/√Hz	0.9 V	TO-8	Datasheet
C30659-1550E-R08BH	C30645	0.08 mm	200 MHz	-	-	-	90 kV/W	220 fW/√Hz	0.9 V	TO-8	Datasheet
C30659-1550-R2AH	C30662	0.2 mm	50 MHz	-	-	-	340 kV/W	130 fW/√Hz	0.9 V	TO-8	Datasheet
C30659-1550E-R2AH	C30662	0.2 mm	50 MHz	-	-	-	340 kV/W	130 fW/√Hz	0.9 V	TO-8	Datasheet
C30919E	C30817	0.8 mm	40 MHz	-	1,000 kV/W	250 kV/W	-	20 fW/√Hz	0.7 V	TO, 1 in	-
C30950EH	C30817	0.8 mm	50 MHz	-	560 kV/W	140 kV/W	-	27 fW/√Hz	0.7 V	TO-8	Datasheet
LLAM-1550-R08BH	C30645	0.08 mm	200 MHz	-	-	-	90 kV/W	220 fW/√Hz	0.9 V	TO-8 FLANGE	Datasheet
LLAM-1550E-R08BH	C30645	0.08 mm	200 MHz	-	-	-	90 kV/W	220 fW/√Hz	0.9 V	TO-8 FLANGE	Datasheet
LLAM-1550-R2AH	C30662	0.2 mm	50 MHz	-	-	-	340 kV/W	130 fW/√Hz	0.9 V	TO-8 FLANGE	Datasheet
LLAM-900-R5BH	C30902	0.5 mm	200 MHz	-	400 kV/W	-	-	40 fW/√Hz	0.9 V	TO-8 FLANGE	Datasheet
LLAM-1550E-R2AH	C30662	0.2 mm	50 MHz	-	-	-	340	130 fW/√Hz	0.9 V	TO-8 FLANGE	Datasheet
LLAM-1060-R8BH	C30954	0.8 mm	200 MHz	-	370 kV/W	200 kV/W	-	50 fW/√Hz	0.9 V	TO-8 FLANGE	Datasheet
LLAM-1060E-R8BH	C30954	0.8 mm	200 MHz	-	370 kV/W	200 kV/W	-	50 fW/√Hz	0.9 V	TO-8 FLANGE	Datasheet
LLAM-1060-R8BH-FC	C30954	0.8 mm	200 MHz	-	370 kV/W	200 kV/W	-	55 fW/√Hz	0.9 V	TO-8 FLANGE+FC	Datasheet
HUV-1100BGH	UV-100	2.5 mm	0.001 MHz	-	130 MV/W	-	-	30 fW/√Hz	5 min	CUSTOM	-
HUV-2000BH	UV-215	5.4 mm	0.001 MHz	-	130 MV/W	-	-	70 fW/√Hz	6 min	CUSTOM	-
HeliX-902-200	C30902	0.5 mm	200 MHz	-	650 kV/W	-	-	50 fW/√Hz	1 V	CUSTOM	-
HeliX-954-200	C30954	0.8 mm	150 MHz	-	650 kV/W	360 kV/W	-	110 fW/√Hz	1 V	CUSTOM	-

Please note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden.

Manufacturer "Excelitas Technologies"

Excelitas’ thermal infrared sensors like thermopiles or pyroelectric IR detectors (PIR) are used for motion detection, presence monitoring, temperature measurement and gas detection. Excelitas’ broad portfolio of sensors, detectors and emitters also includes phototransistors, photodiodes, PIN photodiodes, avalanche photodiodes (APD), ambient light sensors, single photon detectors and many more.

The products can be found in a vast array of applications across automotive, consumer products, defense and aerospace, industrial, medical, safety and security and sciences sectors.

Please note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden.

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