High-performance Silicon Avalanche Photodiodes APD

Name: High-performance Silicon Avalanche Photodiodes APD
Brand: Excelitas Technologies
SKU: SW11514
Availability: OutOfStock

Product number: SW11514

Manufacturer: Excelitas Technologies

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High-performance Silicon Avalanche Photodiodes APD Excelitas Datasheet

Product information "High-performance Silicon Avalanche Photodiodes APD"

Active Area Diameter 0.5 to 1.5 mm; Responsivity 8 to 128 A/W; Capacitance 1.6 to 4 pF; Package TO-5, TO-8 Flange, TO-18

Exelitas‘ series of high-performance, rear-entry, “reach-through” silicon avalanche photodiodes (APDs) offer the best compromise in terms of cost and performance for applications requiring high-speed and low-noise photon detection from 400 nm up to 1100 nm.

These Silicon APDs feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. The active area varies from 0.5 mm to 1.5 mm.

C30817EH: This silicon avalanche photodiode for general-purpose applications is designed using a double-diffused “reach through” structure. This structure provides high responsivity between 400 to 1100 nm, as well as fast rise and fall times at all wavelengths. Since the fall time characteristics has no “tail”, the responsivity of the device is independent of modulation frequency up to about 200 MHz.

C30884EH: This silicon avalanche photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz. This Si APD is made using a double-diffused “reach-through” structure and is optimized for high responsivity at wavelengths of below 1000 nm.

C30902BH: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active area diameter. Suitable for biomedical and analytical applications, this Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths.

C30902EH: This high-performance silicon avalanche photodiode (APD) has an active area diameter of 0.5 mm and is suitable for biomedical and analytical applications. This Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths.

C30902EH-2: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active diameter and a 905 nm bandpass filter in a TO-18 housing. This Si APD is suitable for biomedical and analytical applications.

C30902SH: Selected high-performance silicon avalanche photodiodes with extremely low noise and bulk dark current. Suitable for biomedical and analytical applications, this Si APD provides 0.5 mm active diameter in TO-18 housing.

C30902SH-2: High-performance, low-noise, selected silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in a TO-18 housing with an inline 905 nm bandpass filter.

C30902SH-TC: High-performance, low-noise, selected, single-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing.

C30902SH-DTC: High-performance, low-noise, selected, double-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing.

C30916EH: Large-area silicon avalanche photodiode with 1.5 mm active area diameter in TO-5 housing.

Part Number	Active Diameter	Capacitance	Rise/Fall Time	Dark Current	Breakdown Voltage min	Breakdown Voltage max	Temperature Coefficient	Typical Gain	Responsivity			NEP	Package
									830 nm	900 nm	1060 nm
Unit	mm	pF	ns	nA	V	V	V/°C		A/W	A/W	A/W	fW/√Hz
C30817EH	0.8	2	2	50	300	475	2.2	120	-	75	-	13	TO-5
C30884E	0.8	4	1	100	190	290	1.1	100	-	63	8	13	TO-5
C30902BH	0.5	1.6	0.5	15	185	265	0.7	150	77	60	-	3	Ball lens TO-18
C30902EH	0.5	1.6	0.5	15	185	265	0.7	150	77	60	-	3	TO-18, flat window
C30902EH-2	0.5	1.6	0.5	15	185	265	0.7	150	77	60	-	3	TO-18, built-in 905 nm filter
C30902SH	0.5	1.6	0.5	15	185	265	0.7	250	128	108	-	0.9	TO-18, flat window
C30902SH-2	0.5	1.6	0.5	15	185	265	0.7	250	128	108	-	0.9	TO-18, built-in 905 nm filter
C30902SH-TC	0.5	1.6	0.5	2	225	-	0.7	250	128	108	-	0.04 pA/√Hz	TO-8 flange
C30902SH-DTC	0.5	1.6	0.5	1	225	-	0.7	250	128	108	-	0.02 pA/√Hz	TO-8 flange
C30916EH	1.5	3	3	100	315	490	2.2	80	-	50	12	20	TO-5

Applications: LIDAR; Laser Detection; Range Finding; Small-signal Fluorescence; Photon Counting; Bar Code Scanning; Optical Communications; High-speed Switching Systems; Transit-time Measurements; Biomedical and Analytical Applications; Confocal Microscopes; Spectrophotometers; Luminometers; DNA Sequencers, Particle Sizing

Please note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden.

Manufacturer "Excelitas Technologies"

Excelitas’ thermal infrared sensors like thermopiles or pyroelectric IR detectors (PIR) are used for motion detection, presence monitoring, temperature measurement and gas detection. Excelitas’ broad portfolio of sensors, detectors and emitters also includes phototransistors, photodiodes, PIN photodiodes, avalanche photodiodes (APD), ambient light sensors, single photon detectors and many more.

The products can be found in a vast array of applications across automotive, consumer products, defense and aerospace, industrial, medical, safety and security and sciences sectors.

Please note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden.

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Product number: SW11535

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