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High-performance Silicon Avalanche Photodiodes APD

Product information "High-performance Silicon Avalanche Photodiodes APD"

Active Area Diameter 0.5 to 1.5 mm; Responsivity 8 to 128 A/W; Capacitance 1.6 to 4 pF; Package TO-5, TO-8 Flange, TO-18

Exelitas‘ series of high-performance, rear-entry, “reach-through” silicon avalanche photodiodes (APDs) offer the best compromise in terms of cost and performance for applications requiring high-speed and low-noise photon detection from 400 nm up to 1100 nm.

These Silicon APDs feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. The active area varies from 0.5 mm to 1.5 mm.

C30817EH: This silicon avalanche photodiode for general-purpose applications is designed using a double-diffused “reach through” structure. This structure provides high responsivity between 400 to 1100 nm, as well as fast rise and fall times at all wavelengths. Since the fall time characteristics has no “tail”, the responsivity of the device is independent of modulation frequency up to about 200 MHz.

C30884EH: This silicon avalanche photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz. This Si APD is made using a double-diffused “reach-through” structure and is optimized for high responsivity at wavelengths of below 1000 nm.

C30902BH: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active area diameter. Suitable for biomedical and analytical applications, this Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths.

C30902EH: This high-performance silicon avalanche photodiode (APD) has an active area diameter of 0.5 mm and is suitable for biomedical and analytical applications. This Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths.

C30902EH-2: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active diameter and a 905 nm bandpass filter in a TO-18 housing. This Si APD is suitable for biomedical and analytical applications.

C30902SH: Selected high-performance silicon avalanche photodiodes with extremely low noise and bulk dark current. Suitable for biomedical and analytical applications, this Si APD provides 0.5 mm active diameter in TO-18 housing.

C30902SH-2: High-performance, low-noise, selected silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in a TO-18 housing with an inline 905 nm bandpass filter.

C30902SH-TC: High-performance, low-noise, selected, single-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing.

C30902SH-DTC: High-performance, low-noise, selected, double-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing.

C30916EH: Large-area silicon avalanche photodiode with 1.5 mm active area diameter in TO-5 housing.

 

Part Number Active Diameter Capacitance Rise/Fall Time Dark Current Breakdown Voltage min Breakdown Voltage max Temperature Coefficient Typical Gain Responsivity NEP Package
                830 nm 900 nm 1060 nm    
Unit mm pF ns nA V V V/°C   A/W A/W A/W fW/√Hz  
C30817EH 0.8 2 2 50 300 475 2.2 120 - 75 - 13 TO-5
C30884E 0.8 4 1 100 190 290 1.1 100 - 63 8 13 TO-5
C30902BH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 Ball lens TO-18
C30902EH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, flat window
C30902EH-2 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, built-in 905 nm filter
C30902SH 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, flat window
C30902SH-2 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, built-in 905 nm filter
C30902SH-TC 0.5 1.6 0.5 2 225 - 0.7 250 128 108 - 0.04 pA/√Hz TO-8 flange
C30902SH-DTC 0.5 1.6 0.5 1 225 - 0.7 250 128 108 - 0.02 pA/√Hz TO-8 flange
C30916EH 1.5 3 3 100 315 490 2.2 80 - 50 12 20 TO-5



Applications:
LIDAR; Laser Detection; Range Finding; Small-signal Fluorescence; Photon Counting; Bar Code Scanning; Optical Communications; High-speed Switching Systems; Transit-time Measurements; Biomedical and Analytical Applications; Confocal Microscopes; Spectrophotometers; Luminometers; DNA Sequencers, Particle Sizing 

Manufacturer "PCO Excelitas"
Excelitas PCO is a camera manufacturer leading in digital imaging innovation across various sectors, including scientific and industrial research, automotive testing, quality control, and metrology. Founded in 1987 as Pioneering in Cameras and Optoelectronics (PCO), the company initially focused on image-intensified cameras and later co-invented the sCMOS sensor technology, elevating imaging performance standards. PCO was acquired by Excelitas in 2021. The camera portfolio of Excelitas PCO ranges from deep ultraviolet (DUV) to shortwave infrared (SWIR), encompassing long exposure to high-speed and line scan to high-resolution area scan capabilities. The company's software suite supports control and processing across a wide range of platforms and architectures. https://www.excelitas.com/product-category/pco Countries of Representation Denmark, Finland, Iceland, Norway, Sweden
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