InGaAs PIN Photodiodes

Active Area Diameter 0.5 to 1.5 mm; Responsivity 8 to 128 A/W; Capacitance 1.6 to 4 pF; Package TO-5, TO-8 Flange, TO-18 Exelitas‘ series of high-performance, rear-entry, “reach-through” silicon avalanche photodiodes (APDs) offer the best compromise in terms of cost and performance for applications requiring high-speed and low-noise photon detection from 400 nm up to 1100 nm. These Silicon APDs feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. The active area varies from 0.5 mm to 1.5 mm. C30817EH: This silicon avalanche photodiode for general-purpose applications is designed using a double-diffused “reach through” structure. This structure provides high responsivity between 400 to 1100 nm, as well as fast rise and fall times at all wavelengths. Since the fall time characteristics has no “tail”, the responsivity of the device is independent of modulation frequency up to about 200 MHz. C30884EH: This silicon avalanche photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz. This Si APD is made using a double-diffused “reach-through” structure and is optimized for high responsivity at wavelengths of below 1000 nm. C30902BH: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active area diameter. Suitable for biomedical and analytical applications, this Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. C30902EH: This high-performance silicon avalanche photodiode (APD) has an active area diameter of 0.5 mm and is suitable for biomedical and analytical applications. This Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths. C30902EH-2: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active diameter and a 905 nm bandpass filter in a TO-18 housing. This Si APD is suitable for biomedical and analytical applications. C30902SH: Selected high-performance silicon avalanche photodiodes with extremely low noise and bulk dark current. Suitable for biomedical and analytical applications, this Si APD provides 0.5 mm active diameter in TO-18 housing. C30902SH-2: High-performance, low-noise, selected silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in a TO-18 housing with an inline 905 nm bandpass filter. C30902SH-TC: High-performance, low-noise, selected, single-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing. C30902SH-DTC: High-performance, low-noise, selected, double-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing. C30916EH: Large-area silicon avalanche photodiode with 1.5 mm active area diameter in TO-5 housing.   Part Number Active Diameter Capacitance Rise/Fall Time Dark Current Breakdown Voltage min Breakdown Voltage max Temperature Coefficient Typical Gain Responsivity NEP Package                 830 nm 900 nm 1060 nm     Unit mm pF ns nA V V V/°C   A/W A/W A/W fW/√Hz   C30817EH 0.8 2 2 50 300 475 2.2 120 - 75 - 13 TO-5 C30884E 0.8 4 1 100 190 290 1.1 100 - 63 8 13 TO-5 C30902BH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 Ball lens TO-18 C30902EH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, flat window C30902EH-2 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, built-in 905 nm filter C30902SH 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, flat window C30902SH-2 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, built-in 905 nm filter C30902SH-TC 0.5 1.6 0.5 2 225 - 0.7 250 128 108 - 0.04 pA/√Hz TO-8 flange C30902SH-DTC 0.5 1.6 0.5 1 225 - 0.7 250 128 108 - 0.02 pA/√Hz TO-8 flange C30916EH 1.5 3 3 100 315 490 2.2 80 - 50 12 20 TO-5 Applications: LIDAR; Laser Detection; Range Finding; Small-signal Fluorescence; Photon Counting; Bar Code Scanning; Optical Communications; High-speed Switching Systems; Transit-time Measurements; Biomedical and Analytical Applications; Confocal Microscopes; Spectrophotometers; Luminometers; DNA Sequencers, Particle Sizing 

High Speed; Fiber Type SM, PM, RC; 780-1625 nm; Fiber Length 5-17 m; Fiber Stretch 0.035-0.21 µm/V; Fiber Leads 1 m, 0.9 mm OD Jacket; Connector Type Bare Fiber, FC/PC, FC/APC The PZ1 series are the high-speed members of Optiphase’s family of fiber stretchers. At the core of the PZ1 high-speed fiber stretchers is a fiber wound piezoelectric element for use in a wide range of optical interferometric measurement and sensing system applications. Optiphase’s expertise in the design, manufacture and use of all-fiber interferometers has produced a unique multi-layer winding approach resulting in an enhanced modulation function while maintaining a high operational frequency. PZ1 high-speed fiber stretchers are available with single mode (SM), commercial polarization maintaining (PM, Panda or Bowtie) or SM reduced cladding (RC) fiber types PZ1 high-speed fiber stretchers deliver a high performance to cost ratio, exceeding all other known competitive devices. The compact and low-profile form factor makes the PZ1 series easily configurable into small spaces. In addition, Optiphase fiber stretchers are unique in that they do not require proprietary drivers. For most low-voltage applications (<±15 V), Optiphase stretchers can be driven by standard electronics such as signal generators, op-amps or other laboratory equipment without modification. For more information on how to drive PZ1 high-speed fiber stretchers see the downloadable application note. Key Features: High Speed Compact Package Fiber Type: Single Mode (SM), Polarization Maintaining (PM )or Reduced Cladding SM (RC) Fiber Multiple Termination Choices Unique Multi-layer Winding Can Be Driven With General Purpose Electronics Operational Wavelength: 780 to 1625 nm Fiber Stretch: 0.035 to 0.21 µm/V Optical Path Displacement (n = 1): 0.05, 0.2, 0.3 µm/V Time Delay: 0.00017 to 0.001 ps/V Fiber Length: 5, 12.3, 17 m Inclusive Fiber Wind: 4 Layer (1 Layer PM Version Available) Optical Loss: ≤0.5 dB Maximum Voltage Range: ±500 V (Off Resonance, 1,000 V Peak-to-Peak) Fiber Leads: 1 m, 900 μm Loose Tube Connector Type: Bare Fiber, FC/PC, FC/APC Dimensions: 50.8 x 50.8 x 21.6 mm Applications: Open Loop Demodulation; Sensor Simulation; Variable Optical Delay; General Purpose Fiber Interferometry; Large-angle Modulation of Interferometric Phase