Skip to main content

InGaAs PIN Photodiodes

Product information "InGaAs PIN Photodiodes"

Active Area Diameter 0.1-5 mm; Responsivity 0.95 A/W; Capacitance 0.6-950 pF; System Bandwidth 3-3,500 MHz; Dark Current <1-25 nA; Package TO-5, TO-8, TO-18, SMT, Ceramic Carrier

Excelitas’ InGaAs PIN photodiodes and detectors provide high quantum efficiency from 800 nm to 1700 nm with the peak wavelength at 1550 nm. They feature low capacitance for extended bandwidth, high shunt resistance for high sensitivity, high linearity, and uniformity within two percent across the detector active area.

High-speed versions include various models of the C30617 and C30618 series with 100 µm or 350 µm active area diameter chip in TO-18 package (flat glass window or ball lens, partly with FC receptacle) or on a rectangular ceramic carrier. These high-speed InGaAs PIN photodiodes feature low capacitance for extended bandwidth as well as high resistance for high sensitivity.

Large-area versions include C30619GH, various models of the C30641 series, C30642GH, C30665GH and C30723GH, with 0.5 mm to 5.0 mm active area diameter chip in TO-5, TO-8 or TO-18 package with flat glass window or flange, some models with single ode dual thermo electric (TE) cooler included in the package. These large-area InGaAs PIN photodiodes feature high responsivity, low dark current and low capacitance for fast response time.

Applications: Beam Rider Receiver; Range Finding; Training & Simulation; Height of Burst; Laser Proximity Sensor; LiDAR; Telecom; Instrumentation; Photometry; Laser Power Monitoring; Fiber Optic Test Equipment; High-speed Switching; Spot Tracking; Missile Guidance; Laser Warning System


Please note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden. 

Manufacturer "Excelitas Technologies"

Excelitas’ thermal infrared sensors like thermopiles or pyroelectric IR detectors (PIR) are used for motion detection, presence monitoring, temperature measurement and gas detection. Excelitas’ broad portfolio of sensors, detectors and emitters also includes phototransistors, photodiodes, PIN photodiodes, avalanche photodiodes (APD), ambient light sensors, single photon detectors and many more.


The products can be found in a vast array of applications across automotive, consumer products, defense and aerospace, industrial, medical, safety and security and sciences sectors.


Please note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden. 

Related links of the manufacturer

Customers also viewed

1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD
Active Area Diameter 0.8-3 mm; Responsivity 25-36 A/W; Capacitance 2-10 pF; NEP 14-20 fW/√Hz; Dark Current 50, 100 nA; Package TO-5, TO-8Excelitas’ 1064 nm long-wavelength enhanced Silicon Avalanche Photodiodes (APDs) C30954EH, C30955EH and C30956EH are made using a double-diffused “reach-through” structure. The design of these photodiodes is such that their long-wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties.The C30954EH, C30955EH and C30956EH long-wavelength enhanced APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low-noise, low-capacitance, and fast rise and fall times characteristics.To help simplify many design needs, these APDs are also available in Excelitas’ high-performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. In addition, these APDs are also available with built-in thermo-electric cooler for easier temperature control.The C30954EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 0.8 mm active area diameter in a TO-5 package.The C30955EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 1.5 mm active area diameter in a TO-5 package.The C30956EH large-area, long-wavelength enhanced silicon avalanche Photodiode (Si APD) provides a 3 mm active area diameter in a TO-8 package.Key Features:Active Area Diameter: 0.8, 1.5, 3 mmHigh Quantum Efficiency at 1060 nm: ≤40%Enhanced Long-wave Response: >900 nmFast Response Time: 2 nsWide Operating Temperature RangeLow Capacitance @100 kHz: 2 to 10 pFResponsivity @1060 nm: 25 to 36 A/WDark Current: 50, 100 nASpectral Noise Current: 0.5 pA/√HzNEP @1060 nm: 14 to 20 fW/√HzVop Range: 275 to 425 VHermetically Sealed Packages: TO-5, TO-8RoHS CompliantTEC Option AvailableCustomization Available Upon RequestApplications: Range Finding; LiDAR (Light Detection and Ranging); YAG Laser DetectionPlease note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden. 
Product number: SW11551
Manufacturer:

VTD Series Silicon Photodiodes
Active Area 7.41-16.73 mm²; Radiometric Sensitivity 0.55, 0.6 A/W; Capacitance 40-500 pF; Spectral Range 400-1150 nm; Typ. Peak Wavelength 860-940 nm; NEP 48 fW/√Hz; Max. Dark Current 30, 50 nA; Package TO-92, SMT, Ceramic, Mini-DipExcelitas’ VTD Series of industry standard silicon photodiodes consists of planar silicon photodiodes in an infrared transmitting, visible-blocking molded plastic package. All VTD Series silicon photodiodes exhibit low dark current under reverse bias, fast speed of response and a wide field of view.These photodiodes have been commonly used in many applications as a replacement for competitive devices.The VTD34 series in plastic packages (partly surface-mount) are BPW34(F) industry equivalents and provide excellent sensitivity at low light level. These photodiodes with 7.45 mm² active area are designed for a spectral response between 400 nm and 1100 nm or 725 nm and 1150 nm. Suitable for direct mounting to a printed circuit board (PCB), arrays can be formed by positioning these devices side by side.The VTD31AAH is a silicon photodiode on ceramic substrate coated with clear epoxy, and a CLD31AA industry equivalent. This photodiode provides a low dark current, fast response and wide field-of-view. This silicon photodiode provides a 16.73 mm² active area designed for spectral response between 400 nm and 1150 nm.The VTD205 series are silicon photodiodes in TO-92 side-looker package, clear (VTD205KH) or with visible blocking (VTD205H), and an SFH205(K) industry equivalent. This photodiode series provides a 7.41 mm2 active area, low dark current, fast response, and a wide field-of-view. The devices are designed for spectral response between 800 nm and 1100 nm (VTD205H) or between 400 nm and 1100 nm (VTD205KH).The VTD206 series are silicon photodiodes in TO-92 side-looker package, clear (VTD206KH) or with visible blocking (VTD206H), and an SFH206(K) industry equivalent. This photodiode series provides a 7.41 mm2 active area, low dark current, fast response, and a wide field-of-view. The devices are designed for spectral response between 750 nm and 1100 nm (VTD206H) or between 400 nm and 1100 nm (VTD206KH).Applications: Pulse Oximetry; Automotive; Surface-mount Assembly ProcessPlease note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden. 
Product number: SW11557
Manufacturer: