InGaAs PIN Photodiodes

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.07 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 0.65 to 20 pF; Package Angled Ceramic Substrate OSI Optoelectronics’ FCI-InGaAs-XXX-ACER series of high-speed InGaAs photodiode on angled ceramic submount with active area diameters of 70, 120, 300, 400 and 500 µm is part of OSI Optoelectronics' high speed IR sensitive photodiode series mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5° greatly reduces the back reflection. FCI-InGaAs-XXX-ACER chips can be epoxy/eutectic mounted onto the angled ceramic substrate. Key Features: 5° Angle Ceramic Low Noise High Responsivity High Speed Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Gigabit Ethernet/Fibre Channel; SONET / SDH, ATM; Diode Laser Monitor; Instrumentation

1310, 1550 nm; Data Rate 4-1,024 Mb/s; Sensitivity -50—31 dBm; Responsivity 0.85, 0.9 A/W; Transfer Gain 4,000-40,000 V/W; Output Impedance 30-60 Ω With the LPAD PINAMP series, OSI LaserDiode provides a low-cost, high-performance miniature optical receiver module which integrates a high-speed, high-responsivity, low-leakage-current InGaAs photodiode with a GaAs transimpedance amplifier. LPAD series’ transimpedance amplifier incorporates automatic gain control providing high optical overload performance. The receiver package offers high reliability which satisfies Telcordia GR-468-CORE specifications. OSI LaserDiode’s LPAD PINAMP series pigtailed receivers are available with industry standard FC, LC, SC, and ST connectors. Custom connectors are also available on request. Key Features: Data Rates: 4 Mb/s, 52 Mb/s, 155 Mb/s, 622 Mb/s, 1 Gb/s High Responsivity and Low Dark Current InGaAs PIN Detector High Sensitivity @10-9 (BER): -50 to -31 dBm Overload @-5 VDC: -4, 0 dBm Transfer Gain @1310 nm: 4,000 to 40,000 V/W Output Impedance: 30 Ω to 60 Ω Wide Dynamic Range Single Supply Operation: 5 VDC (4.75 to 5.25 VDC) Hermetic Package Single Ended Differential Output (1 Gb/s only) GR-468-CORE Telcordia Qualified Operating Temperature: -40 °C to +85 °C Applications: Supervisory Channel; Long-haul Transmission Networks; Short-haul Transmission Networks; DWDM Transponders; SDH/SONET Single Mode (SM) Applications; Instrumentation and Testing; Data Communications; Gigabit Ethernet

Active Area 7.41-16.73 mm²; Radiometric Sensitivity 0.55, 0.6 A/W; Capacitance 40-500 pF; Spectral Range 400-1150 nm; Typ. Peak Wavelength 860-940 nm; NEP 48 fW/√Hz; Max. Dark Current 30, 50 nA; Package TO-92, SMT, Ceramic, Mini-DipExcelitas’ VTD Series of industry standard silicon photodiodes consists of planar silicon photodiodes in an infrared transmitting, visible-blocking molded plastic package. All VTD Series silicon photodiodes exhibit low dark current under reverse bias, fast speed of response and a wide field of view.These photodiodes have been commonly used in many applications as a replacement for competitive devices.The VTD34 series in plastic packages (partly surface-mount) are BPW34(F) industry equivalents and provide excellent sensitivity at low light level. These photodiodes with 7.45 mm² active area are designed for a spectral response between 400 nm and 1100 nm or 725 nm and 1150 nm. Suitable for direct mounting to a printed circuit board (PCB), arrays can be formed by positioning these devices side by side.The VTD31AAH is a silicon photodiode on ceramic substrate coated with clear epoxy, and a CLD31AA industry equivalent. This photodiode provides a low dark current, fast response and wide field-of-view. This silicon photodiode provides a 16.73 mm² active area designed for spectral response between 400 nm and 1150 nm.The VTD205 series are silicon photodiodes in TO-92 side-looker package, clear (VTD205KH) or with visible blocking (VTD205H), and an SFH205(K) industry equivalent. This photodiode series provides a 7.41 mm2 active area, low dark current, fast response, and a wide field-of-view. The devices are designed for spectral response between 800 nm and 1100 nm (VTD205H) or between 400 nm and 1100 nm (VTD205KH).The VTD206 series are silicon photodiodes in TO-92 side-looker package, clear (VTD206KH) or with visible blocking (VTD206H), and an SFH206(K) industry equivalent. This photodiode series provides a 7.41 mm2 active area, low dark current, fast response, and a wide field-of-view. The devices are designed for spectral response between 750 nm and 1100 nm (VTD206H) or between 400 nm and 1100 nm (VTD206KH).Applications: Pulse Oximetry; Automotive; Surface-mount Assembly ProcessPlease note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden. 

900 to 1700 nm; Active Area 0.79, 1.77, 7.07 mm2; AA Dia. 1.0, 1.5, 3.0 mm; Responsivity 0.80 to 0.95 A/W; Capacitance 80 to 1800 pF; Package TO-5, TO-46 FCI-InGaAs-XXX-X series with active area diameters of 1, 1.5 and 3 mm, are part of OSI Optoelectronics' large active area IR sensitive InGaAs range of photodiodes which exhibit excellent responsivity from 1100 to 1620 nm, allowing high sensitivity to weak signals. These large active area devices are ideal for use in infrared instrumentation and monitoring applications. FCI-InGaAs-XXX-X photodiode chips are isolated in TO-46 or TO-5 packages with a broadband double-sided anti-reflective (AR) coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X large active area photodiodes come with different shunt resistance values of 5, 10, 20, 30 and 40 MΩ. Key Features: High Responsivity Large Active Area Diameter: 1, 1.5, 3 mm Low Noise Spectral Range: 900 to 1700 nm Applications: Optical Instrumentation; Power Measurement; Infrared Instrumentation, Monitoring and Sensing; Medical Devices

Active Area Diameter 0.8-3 mm; Responsivity 25-36 A/W; Capacitance 2-10 pF; NEP 14-20 fW/√Hz; Dark Current 50, 100 nA; Package TO-5, TO-8Excelitas’ 1064 nm long-wavelength enhanced Silicon Avalanche Photodiodes (APDs) C30954EH, C30955EH and C30956EH are made using a double-diffused “reach-through” structure. The design of these photodiodes is such that their long-wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties.The C30954EH, C30955EH and C30956EH long-wavelength enhanced APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low-noise, low-capacitance, and fast rise and fall times characteristics.To help simplify many design needs, these APDs are also available in Excelitas’ high-performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. In addition, these APDs are also available with built-in thermo-electric cooler for easier temperature control.The C30954EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 0.8 mm active area diameter in a TO-5 package.The C30955EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 1.5 mm active area diameter in a TO-5 package.The C30956EH large-area, long-wavelength enhanced silicon avalanche Photodiode (Si APD) provides a 3 mm active area diameter in a TO-8 package.Key Features:Active Area Diameter: 0.8, 1.5, 3 mmHigh Quantum Efficiency at 1060 nm: ≤40%Enhanced Long-wave Response: >900 nmFast Response Time: 2 nsWide Operating Temperature RangeLow Capacitance @100 kHz: 2 to 10 pFResponsivity @1060 nm: 25 to 36 A/WDark Current: 50, 100 nASpectral Noise Current: 0.5 pA/√HzNEP @1060 nm: 14 to 20 fW/√HzVop Range: 275 to 425 VHermetically Sealed Packages: TO-5, TO-8RoHS CompliantTEC Option AvailableCustomization Available Upon RequestApplications: Range Finding; LiDAR (Light Detection and Ranging); YAG Laser DetectionPlease note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden.