APDXX-8-150 Silicon Avalanche Photodiodes
Product information "APDXX-8-150 Silicon Avalanche Photodiodes"
800 nm Band Optimized; Active Area 0.003 to 1.77 mm2; AA Dia. 0.2 to 1.5 mm; Responsivity 50 A/W; Capacitance 1.5 to 10 pF; Package TO-5, TO-52
OSI Optoelectronics introduces its APDXX-8-150 “800 nm optimized” silicon avalanche photodiode (APD) series, available in hermetic metal packages. Devices offer lower noise and high sensitivity over bandwidths up to 1 GHz. APDXX-8-150 devices exhibit a low temperature coefficient of 0.45 V/˚C.
OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity.
The APDXX-8-150 series is available with different active area sizes ranging from 0.2 to 1.5 mm in diameter as well as with flat windows or ball lenses for optical fiber applications. Depending on active area size, the devices are supplied in TO-5, or TO-52 packages.
Key Features:
- Active Area Diameters: 0.2, 0.5, 1.0, 1.5 mm
- Low Temperature Coefficient: 0.45 V/°C
- High Sensitivity
- Low Noise
- High Bandwidth
Applications: Optical Fiber Communication; Laser Range Finder; High-speed Photometry