Avalanche Photodiode APD Module for OTDR
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Product information "Avalanche Photodiode APD Module for OTDR"
1250-1650 nm; Responsivity 25 A/W; Breakdown Voltage 40-70 V; Dark Current 1 nA; Package 3-pin TO 46
Wooriro’s APD module for OTDR applications is based on an InGaAs/InP avalanche photodiode (APD) in TO-46 package. This module’s APD is pigtailed, and the module can be ordered either without connector or with a SC, LC or FC type optical connector in UPC or APC version.
Designed for an optical wavelength range of 1250 nm to 1650 nm, the APD module for OTDR features a very low dark current of 1 nA typical at 98% breakdown voltage. Typical responsivity is 25 A/W at 1550 nm wavelength and 10 nW optical input power.
Key Features:
- InGaAs/InP Avalanche Photodiode APD
- Low Dark Current: 1 nA (Typical, @0.98 x Breakdown Voltage)
- High Reliability
- Optical Wavelength Range: 1250 nm to 1650 nm
- Responsivity: 25 A/W Typ. (VAPD = 0.98 VBR, λ = 1550 nm, Pin = 10 nW)
- Breakdown Voltage VBR: 40 V to 70 V (Id = 10 µA)
- Temperature Coefficient of VBR: 90 mV/°C (-40 °C to +85 °C)
- Dimensions: Ø 6 mm x Length 20.2 mm
Applications: OTDR; Optical Sensor; Optical Test Instruments
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Integrated TIA With Burst Mode; 1260-1640 nm; Responsivity 10.5 A/W; Breakdown Voltage 23-31 V; Dark Current 500 nA; Package 6-pin TO 46 Wooriro’s avalanche photodiode (APD) with burst-mode TIA is packaged in a 6-pin TO-46 case with aspherical lens cap. The APD’s integrated transimpedance amplifier (TIA) can be operated in a burst mode that lifts the input data rate from 1.25 Gb/s continuous to 10.3125 Gb/s burst. Users can control the burst mode via a logic signal connected to pin 5 of the APD’s TO-46 case. Designed for an optical wavelength range of 1260 nm to 1640 nm, the APD with burst-mode TIA features a dark current of 500 nA typical at 98% breakdown voltage. Typical responsivity is 10.5 A/W at 1310 nm wavelength and 50 µW optical input power. Key Features: Integrated Transimpedance Amplifier (TIA) Burst Mode for 10 Gb/s Standard TO-46 Package With Aspherical Lens Cap Optical Wavelength Range: 1260 nm to 1640 nm Responsivity: 10.5 A/W Typ. (λ = 1310 nm, Pin = 50 µW, VAPD = 0.95 VBR) TIA Supply Voltage: 3.3 V (2.97 V to 3.63 V) TIA Supply Current: 40 mA Typ. Transimpedance: 2 kΩ Typ. (Differential, 50 Ω on Each Output) APD Breakdown Voltage VBR: 23 V to 31 V Temperature Coefficient of VBR: 20 mV/°C (-40 °C to +85 °C) APD Dark Current: 500 nA (Typical, @0.9 x Breakdown Voltage) Sensitivity: -32 dBm Typ. (CM @Continuous Mode 10.3125 Gb/s NRZ, PRBS = 231 – 1, BER = 1E-3, ER = 5.97 dB, λ = 1310 nm) Dimensions: Ø 4.67 mm x Length 3.38 mm Applications: IEEE 802.3av 10G 10G-EPON OLT
REQUEST PRICING AND AVAILABILITY
- Get your individual quote.
- Technical compatibility review included.
- Volume discounts available.
No obligation. Direct access to our engineering team.
InGaAs Photodiodes;Large Area;0,95 A/W ;TO-18