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FCI-InGaAs-36C InGaAs Photodiodes

Product information "FCI-InGaAs-36C InGaAs Photodiodes"

910 to 1650 nm; Active Area 0.001 mm2; AA Dia. 0.036 mm; Responsivity 0.75 to 0.85 A/W; Capacitance 0.16, 0.2 pF; Package Special Chip-size

OSI Optoelectronics' FCI-InGaAs-36C is an OC-192 (SONET/SDH) capable photosensitive device, exhibiting low dark current and good performance stability.

Both anode and cathode contacts appear on the chip's top facet. FCI-InGaAs-36C is an ideal component in high-speed optical data transport applications at 10 Gbps, responding to a spectral envelope that spans from 910 to 1650 nm.

Key Features:

  • High Speed: 10 Gbps Data Rates
  • Low Dark Current
  • Front Illuminated
  • High Responsivity: Typ. 0.8 A/W @ 1550 nm
  • Diameter of Light Sensitive Area: 36 µm
  • Low Capacitance


Applications: High Speed Optical Communications; OC-192; Optical Networking; Optical Measurement

Manufacturer "OSI Optoelectronics"
OSI Optoelectronics is a leading provider of advanced optoelectronics and electronic assemblies. These technical elements are key to enabling critical functions such as analytics and monitoring, test and measurement, communication and tracking, and imaging in a wide variety of industries, including: Aerospace & Defense, Medical & Life Sciences, Automation & Industrial Production and Automotive & Consumer Electronics.
Related links of the manufacturer
Information on the manufacturer (information obligations under the GPSR Product Safety Regulation)
OSI Optoelectronics
12525 Chadron Ave
CA 90250 Hawthorne, United States

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Product number: SW12022

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FCI-InGaAs-300B1XX Back-illuminated InGaAs Photodiodes
900 to 1700 nm; Active Area 0.07 mm2; AA Dia. 0.3 mm, Pitch 0.5 mm; Responsivity 0.80 to 0.85 A/W; Capacitance 8 to 10 pF; Package Flip Chip Mountable OSI Optoelectronics’ FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They are available as single element diodes or 4 - or 8- element arrays with an active area of 300 µm each. These back-illuminated InGaAs photodiodes/arrays are designed to be flip chip mounted (active area facing up), or assembled face down minimizing the overall dimensions. These low inductance, low dark current, and low capacitance back illuminated photodiodes/arrays come with or without ceramic substrates. Key Features: Back Illumination High Responsivity on Both Front and Back Low Noise Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Multichannel Fiber Optic Receiver; Power Monitoring; Single Mode (SM) Multi Mode (MM) Fiber Optic Receiver; Fast Ethernet, SONET/SDH OC-3/STM-1 ATM; Instrumentation and Analog Receivers
Product number: SW11027

REQUEST PRICING AND AVAILABILITY

- Get your individual quote.
- Technical compatibility review included.
- Volume discounts available.

No obligation. Direct access to our engineering team.