EOPD Molded Plastic, Hermetic TO and SMD Photodiodes

Active Area Diameter 0.5 to 1.5 mm; Responsivity 8 to 128 A/W; Capacitance 1.6 to 4 pF; Package TO-5, TO-8 Flange, TO-18 Exelitas‘ series of high-performance, rear-entry, “reach-through” silicon avalanche photodiodes (APDs) offer the best compromise in terms of cost and performance for applications requiring high-speed and low-noise photon detection from 400 nm up to 1100 nm. These Silicon APDs feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. The active area varies from 0.5 mm to 1.5 mm. C30817EH: This silicon avalanche photodiode for general-purpose applications is designed using a double-diffused “reach through” structure. This structure provides high responsivity between 400 to 1100 nm, as well as fast rise and fall times at all wavelengths. Since the fall time characteristics has no “tail”, the responsivity of the device is independent of modulation frequency up to about 200 MHz. C30884EH: This silicon avalanche photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz. This Si APD is made using a double-diffused “reach-through” structure and is optimized for high responsivity at wavelengths of below 1000 nm. C30902BH: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active area diameter. Suitable for biomedical and analytical applications, this Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. C30902EH: This high-performance silicon avalanche photodiode (APD) has an active area diameter of 0.5 mm and is suitable for biomedical and analytical applications. This Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths. C30902EH-2: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active diameter and a 905 nm bandpass filter in a TO-18 housing. This Si APD is suitable for biomedical and analytical applications. C30902SH: Selected high-performance silicon avalanche photodiodes with extremely low noise and bulk dark current. Suitable for biomedical and analytical applications, this Si APD provides 0.5 mm active diameter in TO-18 housing. C30902SH-2: High-performance, low-noise, selected silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in a TO-18 housing with an inline 905 nm bandpass filter. C30902SH-TC: High-performance, low-noise, selected, single-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing. C30902SH-DTC: High-performance, low-noise, selected, double-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing. C30916EH: Large-area silicon avalanche photodiode with 1.5 mm active area diameter in TO-5 housing.   Part Number Active Diameter Capacitance Rise/Fall Time Dark Current Breakdown Voltage min Breakdown Voltage max Temperature Coefficient Typical Gain Responsivity NEP Package                 830 nm 900 nm 1060 nm     Unit mm pF ns nA V V V/°C   A/W A/W A/W fW/√Hz   C30817EH 0.8 2 2 50 300 475 2.2 120 - 75 - 13 TO-5 C30884E 0.8 4 1 100 190 290 1.1 100 - 63 8 13 TO-5 C30902BH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 Ball lens TO-18 C30902EH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, flat window C30902EH-2 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, built-in 905 nm filter C30902SH 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, flat window C30902SH-2 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, built-in 905 nm filter C30902SH-TC 0.5 1.6 0.5 2 225 - 0.7 250 128 108 - 0.04 pA/√Hz TO-8 flange C30902SH-DTC 0.5 1.6 0.5 1 225 - 0.7 250 128 108 - 0.02 pA/√Hz TO-8 flange C30916EH 1.5 3 3 100 315 490 2.2 80 - 50 12 20 TO-5 Applications: LIDAR; Laser Detection; Range Finding; Small-signal Fluorescence; Photon Counting; Bar Code Scanning; Optical Communications; High-speed Switching Systems; Transit-time Measurements; Biomedical and Analytical Applications; Confocal Microscopes; Spectrophotometers; Luminometers; DNA Sequencers, Particle Sizing 

410, 436 nm Band Optimized; Active Area 0.81 to 200 mm2; AA Dia. 1.02 to 11.3 mm Round, 1.0 x 1.0 to 10 x 20 mm Rect.; Rise Time 0.02 to 45 µs; Responsivity 0.15 to 0.21 A/W; Capacitance 35 to 17,000 pF; Package TO-5, TO-8, TO-18, BNC, Metal, Plastic, Special OSI Optoelectronics’ blue-enhanced photovoltaic detector series is utilized for applications requiring high sensitivity in the visible-blue region and moderate response speeds. These detectors provide additional sensitivity in the 350 to 550 nm region when compared to the regular photovoltaic devices. For visible and near IR applications i.e. spectral response ranges from 350 to 1100 nm, regular photovoltaic devices can be considered. These detectors feature high shunt resistance and low noise and exhibit long term stability. Unbiased operation of these detectors offers stability under wide temperature variations in DC or low-speed applications. For high light levels (>10mW/cm2), the photoconductive series detectors should be considered for better linearity. These blue-enhanced photovoltaic detectors are not designed to be reverse biased! Very slight improvement in response time may be obtained with a slight bias. Applying a reverse bias of more than a few volts (>3 V) will permanently damage the detectors. If faster response times are required, the photoconductive series should be considered. Please refer to the photovoltaic mode (PV) paragraph in the application note “Photodiode Characteristics and Applications” available under “Downloads” for detailed information on electronics set up. Key Features: Blue Enhanced High Speed Response Low Capacitance Low Dark Current Wide Dynamic Range High Responsivity Ultra Low Noise High Shunt Resistance Applications: Pulse Detectors; Optical Communications; Bar Code Readers; Optical Remote Control; Medical Equipment; High-speed Photometry; Colorimeters; Spectroscopy Equipment; Fluorescence

1100 to 1650 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm; Responsivity 1,600 to 2,500 V/W; Transimpedance 2,800 Ω; Package TO-46 OSI Optoelectronics’ FCI-H125/250G-InGaAs-75 series are compact and integrated high-speed InGaAs photodetectors with wide dynamic range transimpedance amplifiers (TIA). Combining the detector with the TIA in a hermetically sealed 4-pin TO-46 package provides ideal conditions for high-speed signal amplification. High speed and superior sensitivity make these devices ideal for high bit rate receivers used in LAN, MAN, WAN and other high speed communication systems. TO packages come standard with a lensed cap to enhance coupling efficiency, or with a broadband double-sided anti-reflective (AR) coated flat window. The FCI-H125/250G-InGaAs-75 series are also offered with FC, SC, ST and SMA receptacles. Key Features: InGaAs Photodetector / Low Noise Transimpedance Amplifier High Bandwidth / Wide Dynamic Range Hermetically Sealed TO-46 Can Single +3.3 to +5 V Power Supply Spectral Range 1100 to 1650 nm Differential Output Applications: High-speed Optical Communications; Gigabit Ethernet; Fibre Channel; ATM; SONET OC-48 / SDH STM-16