Avalanche Photodiode APD with Burst-mode TIA

Product number: SW11676

Manufacturer: Wooriro

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10 Gb_s APD TO with Burst-mode TIA Wooriro Datasheet

Product information "Avalanche Photodiode APD with Burst-mode TIA"

Integrated TIA With Burst Mode; 1260-1640 nm; Responsivity 10.5 A/W; Breakdown Voltage 23-31 V; Dark Current 500 nA; Package 6-pin TO 46

Wooriro’s avalanche photodiode (APD) with burst-mode TIA is packaged in a 6-pin TO-46 case with aspherical lens cap. The APD’s integrated transimpedance amplifier (TIA) can be operated in a burst mode that lifts the input data rate from 1.25 Gb/s continuous to 10.3125 Gb/s burst. Users can control the burst mode via a logic signal connected to pin 5 of the APD’s TO-46 case.

Designed for an optical wavelength range of 1260 nm to 1640 nm, the APD with burst-mode TIA features a dark current of 500 nA typical at 98% breakdown voltage. Typical responsivity is 10.5 A/W at 1310 nm wavelength and 50 µW optical input power.

Key Features:

Integrated Transimpedance Amplifier (TIA)
Burst Mode for 10 Gb/s
Standard TO-46 Package With Aspherical Lens Cap
Optical Wavelength Range: 1260 nm to 1640 nm
Responsivity: 10.5 A/W Typ. (λ = 1310 nm, Pin = 50 µW, VAPD = 0.95 VBR)
TIA Supply Voltage: 3.3 V (2.97 V to 3.63 V)
TIA Supply Current: 40 mA Typ.
Transimpedance: 2 kΩ Typ. (Differential, 50 Ω on Each Output)
APD Breakdown Voltage VBR: 23 V to 31 V
Temperature Coefficient of VBR: 20 mV/°C (-40 °C to +85 °C)
APD Dark Current: 500 nA (Typical, @0.9 x Breakdown Voltage)
Sensitivity: -32 dBm Typ. (CM @Continuous Mode 10.3125 Gb/s NRZ, PRBS = 231 – 1, BER = 1E-3, ER = 5.97 dB, λ = 1310 nm)
Dimensions: Ø 4.67 mm x Length 3.38 mm

Applications: IEEE 802.3av 10G 10G-EPON OLT

Manufacturer "Wooriro"

Based in the Republic of Korea, Wooriro has been established in 1998 as an optical communication company. Wooriro supplies passive components such as PLC Splitters or AWGs used for building Fiber To The Home (FTTH) infrastructure, but also high-quality active optical components like single-photon InGaAs/InP Avalanche Photodiodes (APDs), APD modules for OTDR or APDs with integrated burst-mode TIA for 10 Gb/s operation.

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1250-1650 nm; Responsivity 25 A/W; Breakdown Voltage 40-70 V; Dark Current 1 nA; Package 3-pin TO 46 Wooriro’s APD module for OTDR applications is based on an InGaAs/InP avalanche photodiode (APD) in TO-46 package. This module’s APD is pigtailed, and the module can be ordered either without connector or with a SC, LC or FC type optical connector in UPC or APC version. Designed for an optical wavelength range of 1250 nm to 1650 nm, the APD module for OTDR features a very low dark current of 1 nA typical at 98% breakdown voltage. Typical responsivity is 25 A/W at 1550 nm wavelength and 10 nW optical input power. Key Features: InGaAs/InP Avalanche Photodiode APD Low Dark Current: 1 nA (Typical, @0.98 x Breakdown Voltage) High Reliability Optical Wavelength Range: 1250 nm to 1650 nm Responsivity: 25 A/W Typ. (VAPD = 0.98 VBR, λ = 1550 nm, Pin = 10 nW) Breakdown Voltage VBR: 40 V to 70 V (Id = 10 µA) Temperature Coefficient of VBR: 90 mV/°C (-40 °C to +85 °C) Dimensions: Ø 6 mm x Length 20.2 mm Applications: OTDR; Optical Sensor; Optical Test Instruments

Product number: SW11675

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