Avalanche Photodiode APD with Burst-mode TIA

Silicon Photodiodes;UV-Planar Diffused;0,12 A/W @200 nm;TO-8;720 nm

1100-1600 nm; Responsivity 0.8 A/W; Capacitance 0.25 pF; Dark Current 0.1 nA; Package 3-pin TO 46, 6-pin TO-8, 10-pin Mini-Flat Wooriro’s SPAD series (Single Photon Avalanche Diode) comprises InGaAs/InP APD devices specially designed and fabricated for the use of single photon avalanche detection (SPAD) with internal or external cooling systems. SPAD avalanche photodiodes (APDs) can be operated at the voltage above breakdown for short periods, this mode of operation is called “Geiger mode” or “Gated mode” operation. Ultra-low noise operation is possible at a case temperature of -40 °C. The devices can be used for quantum key distribution (QKD) receivers. SPAD devices are available without an integrated thermoelectric cooling device (TEC) in a 3-pin TO-46 package or with integrated TEC in a 6-pin TO-8 package as well as in a butterfly-style 10-pin Mini-Flat package. Key Features: Low Capacitance: <0.3 pF High Speed Optical Wavelength Range: 1100 nm to 1600 nm Coaxial Type Pigtail Low Noise Breakdown Voltage VBR: 50 V to 90 V (ID = 100 µA) Total Dark Current: 0.1 nA Typ. Capacitance: 0.25 pF Typ. Quantum Efficiency: 70% Typ. Responsivity: 0.8 A/W Typ. (1550 nm, M=1) Cooling System: External or Built-in 3-stage TEC Temperature Coefficient of VBR: 0.11 V/°C Typ. Max. AfterPulse Probability: 10% Dark Count Rate: 2.0 kHz (Standard), 0.5 kHz (Premium Grade) (10 MHz Gate Frequency, 2 ns Gate Pulse, 20% PDE) Detection Efficiency (PDE): 20% Typ. (10 MHz Gate Frequency, 2 ns Gate Pulse) Package: 3-pin TO 46, 6-pin TO-8, 10-pin Butterfly-Type Mini-Flat Applications: Special Applications Requiring Single Photon Counting such as QKD , OTDR, etc.