FCI-H125/250G-InGaAs-75 InGaAs Photodiode-Amplifier Hybrids

1250-1650 nm; Responsivity 25 A/W; Breakdown Voltage 40-70 V; Dark Current 1 nA; Package 3-pin TO 46 Wooriro’s APD module for OTDR applications is based on an InGaAs/InP avalanche photodiode (APD) in TO-46 package. This module’s APD is pigtailed, and the module can be ordered either without connector or with a SC, LC or FC type optical connector in UPC or APC version. Designed for an optical wavelength range of 1250 nm to 1650 nm, the APD module for OTDR features a very low dark current of 1 nA typical at 98% breakdown voltage. Typical responsivity is 25 A/W at 1550 nm wavelength and 10 nW optical input power. Key Features: InGaAs/InP Avalanche Photodiode APD Low Dark Current: 1 nA (Typical, @0.98 x Breakdown Voltage) High Reliability Optical Wavelength Range: 1250 nm to 1650 nm Responsivity: 25 A/W Typ. (VAPD = 0.98 VBR, λ = 1550 nm, Pin = 10 nW) Breakdown Voltage VBR: 40 V to 70 V (Id = 10 µA) Temperature Coefficient of VBR: 90 mV/°C (-40 °C to +85 °C) Dimensions: Ø 6 mm x Length 20.2 mm Applications: OTDR; Optical Sensor; Optical Test Instruments

Integrated TIA With Burst Mode; 1260-1640 nm; Responsivity 10.5 A/W; Breakdown Voltage 23-31 V; Dark Current 500 nA; Package 6-pin TO 46 Wooriro’s avalanche photodiode (APD) with burst-mode TIA is packaged in a 6-pin TO-46 case with aspherical lens cap. The APD’s integrated transimpedance amplifier (TIA) can be operated in a burst mode that lifts the input data rate from 1.25 Gb/s continuous to 10.3125 Gb/s burst. Users can control the burst mode via a logic signal connected to pin 5 of the APD’s TO-46 case. Designed for an optical wavelength range of 1260 nm to 1640 nm, the APD with burst-mode TIA features a dark current of 500 nA typical at 98% breakdown voltage. Typical responsivity is 10.5 A/W at 1310 nm wavelength and 50 µW optical input power. Key Features: Integrated Transimpedance Amplifier (TIA) Burst Mode for 10 Gb/s Standard TO-46 Package With Aspherical Lens Cap Optical Wavelength Range: 1260 nm to 1640 nm Responsivity: 10.5 A/W Typ. (λ = 1310 nm, Pin = 50 µW, VAPD = 0.95 VBR) TIA Supply Voltage: 3.3 V (2.97 V to 3.63 V) TIA Supply Current: 40 mA Typ. Transimpedance: 2 kΩ Typ. (Differential, 50 Ω on Each Output) APD Breakdown Voltage VBR: 23 V to 31 V Temperature Coefficient of VBR: 20 mV/°C (-40 °C to +85 °C) APD Dark Current: 500 nA (Typical, @0.9 x Breakdown Voltage) Sensitivity: -32 dBm Typ. (CM @Continuous Mode 10.3125 Gb/s NRZ, PRBS = 231 – 1, BER = 1E-3, ER = 5.97 dB, λ = 1310 nm) Dimensions: Ø 4.67 mm x Length 3.38 mm Applications: IEEE 802.3av 10G 10G-EPON OLT

265-1300 nm; UV, Visible, IR; Active Area 0.1-15 mm²; Responsivity 0.18-0.9 A/W; Dark Current 0.00001-2,000 nA; Package 5 mm Molded Plastic, TO-5, TO-46, TO-52, SMD 1206 EPIGAP offers a wide range of photodiodes in the ultraviolet (UV), visible (VIS) and infrared (IR) spectral range. The EOPD series includes GaP photodiodes, Si and SiC photodiodes as well as InGaAs and AlGaAs photodiodes. Available in 5 mm molded plastic, SMD 1206 and hermetic TO packages (TO-5, TO-46 and TO-52), the EOPD series photodiodes are designed for applications requiring low dark current, high reliability and high sensitivity. Further advantages of the EOPD series photodiodes are degradation stability, good matching with LEDs, no stray light problems and optional miniaturization. The range of standard products is supplemented by specialties with larger active sensor surfaces or extended sensitivity from 150 nm (low UV) up to 2600 nm in the higher infrared range. For customer-specific designs, EPIGAP Optronic’s photodiode components are also available as bare photodiode chips (EOPC series) with high sensitivity and low dark current. Please contact the AMS Technologies photodiode experts to find the right solution that meets your design project’s requirements. We would like to support you and look forward to your inquiries! Key Features: Product Max. Sensitivity Package Active Area Responsivity Dark Current Downloads EOPD-280-0-0.3-1 265 nm TO-52 0.1 mm2 0.18 A/W 10 fA Datasheet EOPD-525-1-0.9-1 525 nm SMD 1206 0.73 mm2 0.3 A/W 5 pA Datasheet EOPD-525-1-0.9-2 525 nm SMD 1206 0.73 mm2 0.3 A/W 5 pA Datasheet EOPD-940-0-2.52 940 nm TO-5 5 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-3.57 940 nm TO-5 10 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-15 940 nm TO-5 15 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-5.8Q 940 nm TO-5 4 x 1.44 mm2 0.6 A/W 0.5 nA Datasheet EOPD-1300-0-0.1-1 1300 nm TO-46 0.1 mm2 0.8 A/W 1 µA Datasheet EOPD-1300-0-0.8-1 1300 nm TO-46 0.8 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-0-1.0-1 1300 nm TO-46 1 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-0-1.5-3 1300 nm TO-46 1.5 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-1-0.3 1300 nm SMD 1206 0.3 mm2 0.8 A/W 0.3 nA Datasheet EOPD-1300-5-0.3 1300 nm 5 mm 0.3 mm2 0.9 A/W 15 pA Datasheet EOPD-1300-0-0.3-1 1300 nm TO-46 0.3 mm2 0.8 A/W 1 µA Datasheet   Applications: Universal measurements in the UV, VIS and IR Range; Sterilization Lamp Monitoring; Flame Monitoring; Alarm Systems; Light Barriers; Daylight Sensors; Nearly Vλ-matched Detectors; Colorimeters; Photometers; Spectroscopy Equipment; Fluorescence; Beam Centering; Optical Encoders; High-speed Optical Communications; Optical LAN; Optical Switches; Ethernet Fiber Channel; Safety Equipment; Light Barriers

1100 to 1650 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm; Responsivity 16 V/mW; Transimpedance 18 kΩ; Package TO-46 OSI Optoelectronics’ FCI-H622M-InGaAs-75 is a high-speed 75 µm InGaAs photodetector integrated with a wide dynamic range transimpedance amplifier (TIA). Combining the detector with the TIA in a hermetically sealed 4-pin TO-46 package provides ideal conditions for high-speed signal detection and amplification. Low capacitance, low dark current and high responsivity of the detector, along with low noise characteristics of the integrated TIA, give rise to excellent sensitivity. In practice, these devices are ideal for datacom and telecom applications. Cost-effective TO-46 packages come standard with a lensed cap for design simplification, or with a broadband double-sided anti-reflective (AR) coated flat window. The FCI-H622M-InGaAs-75 is also offered with FC, SC, ST and SMA receptacles. Key Features: Low Noise Transimpedance Amplifier High Bandwidth Wide Dynamic Range Single +3.3 V Power Supply Spectral Range 1100 to 1650 nm Differential Output Applications: High-speed Optical Communications; ATM; SONET OC-3 / OC-12; SDH STM-1 / STM-4; Optical Receivers

900 to 1700 nm; Active Area 0.07 mm2; AA Dia. 0.3 mm, Pitch 0.5 mm; Responsivity 0.80 to 0.85 A/W; Capacitance 8 to 10 pF; Package Flip Chip Mountable OSI Optoelectronics’ FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They are available as single element diodes or 4 - or 8- element arrays with an active area of 300 µm each. These back-illuminated InGaAs photodiodes/arrays are designed to be flip chip mounted (active area facing up), or assembled face down minimizing the overall dimensions. These low inductance, low dark current, and low capacitance back illuminated photodiodes/arrays come with or without ceramic substrates. Key Features: Back Illumination High Responsivity on Both Front and Back Low Noise Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Multichannel Fiber Optic Receiver; Power Monitoring; Single Mode (SM) Multi Mode (MM) Fiber Optic Receiver; Fast Ethernet, SONET/SDH OC-3/STM-1 ATM; Instrumentation and Analog Receivers

910 to 1650 nm; Active Area 0.001 mm2; AA Dia. 0.036 mm; Responsivity 0.75 to 0.85 A/W; Capacitance 0.16, 0.2 pF; Package Special Chip-size OSI Optoelectronics' FCI-InGaAs-36C is an OC-192 (SONET/SDH) capable photosensitive device, exhibiting low dark current and good performance stability. Both anode and cathode contacts appear on the chip's top facet. FCI-InGaAs-36C is an ideal component in high-speed optical data transport applications at 10 Gbps, responding to a spectral envelope that spans from 910 to 1650 nm. Key Features: High Speed: 10 Gbps Data Rates Low Dark Current Front Illuminated High Responsivity: Typ. 0.8 A/W @ 1550 nm Diameter of Light Sensitive Area: 36 µm Low Capacitance Applications: High Speed Optical Communications; OC-192; Optical Networking; Optical Measurement

900 to 1700 nm; Active Area 0.79, 7.07 mm2; AA Dia. 1.0, 3.0 mm; Rise Time 3, 24 ns; Responsivity 0.85 to 0.95 A/W; Capacitance 25, 225 pF; Package TO-5, TO-8 OSI Optoelectronics’ FCI-InGaAs-QXXX series are large active area InGaAs photodiodes segmented into four separate active areas. These photodiodes come in 1 mm (FCI-InGaAs-Q1000) and 3 mm (FCI-InGaAs-Q3000) active area diameter. The FCI-InGaAs-QXXX quad series with high response uniformity and low crosstalk between the elements are ideal for accurate nulling or centering applications as well as beam profiling applications. They exhibit excellent responsivity from 1100 to 1620nm, are stable over time and temperature, and feature fast response times necessary for high speed or pulse operation. FCI-InGaAs-QXXX photodiodes are packaged in isolated TO-5 or TO-8 cans with a broadband double-sided anti-reflective (AR) coated flat window and are also available mounted on ceramic substrate on request. Key Features: High Responsivity Low Noise Spectral Range: 900 to 1700nm Low Crosstalk Wide Field of View Applications: Accurate Nulling or Centering; Position Sensing; Beam Alignment; Beam Profiling

900 to 1700 nm; Active Area 0.125 mm2; AA Dimensions 0.25 x 0.5 mm; Responsivity 0.80 to 0.95 A/W; Capacitance 15 pF; Package Ceramic Substrate; Reflectance <0.6 OSI Optoelectronics’ FCI-InGaAs-WCER-LR series of InGaAs photodiodes feature a very low reflectance. Designed for telecommunication applications, the FCI-InGaAs-WCER-LR series of InGaAs/InP photodiodes has a typical optical reflectance of less than 0.6% from 1520 to 1620 nm. This ultra-low reflectance over the wide wavelength range was achieved by depositing a proprietary multi-layered anti-reflective (AR) coating directly onto the surface of the InGaAs/InP photodiode. Key Features: Reflectance: Less Than 0.6% Low Noise High Responsivity High Speed Spectral Range: 900 to 1700 nm Applications: Wavelength Lockers / Wavelength Monitoring; Lasers Back Facet Monitoring; DWDM; Instrumentation

900 to 1700 nm; Active Area 0.004, 0.011 mm2; AA Dia. 0.075, 0.120 mm; Rise Time 0.2, 0.3 ns; Responsivity 0.75 to 0.95 A/W; Capacitance 0.65, 1.0 pF; Package TO-46, Ceramic Substrate, Connector Type FC, SC, ST OSI Optoelectronics’ FCI-InGaAs-XX-XX-XX series of high-speed, IR-sensitive InGaAs photodiodes with active area diameters of 75 and 120 µm are part of OSI Optoelectronics’s family of high-speed IR sensitive detectors with fiber pigtail package. The single mode (SM) or multi mode (MM) fiber is optically aligned to either the hermetically sealed InGaAs diode in TO-46 lens cap package enhancing the coupling efficiency and stability, or directly to the InGaAs diode mounted on a ceramic substrate. High responsivity and low capacitance make these devices ideal for very high bit rate receivers used in LAN, MAN, WAN and other high speed communication and monitoring/instrumentation systems. Angle polished connectors and custom packages are also available. For a solution involving FC connector and TO-46 attachment, users may consider either FCI-InGaAs-75-SM-FC or FCI-InGaAs-120-SM-FC in single mode operation. Similarly, the multi-mode variant is available in FCI-InGaAs-120-MM-FC using 62.5/125 µm fiber. The back-reflection of -30dB typical is to be experienced in multi mode (MM) based solutions. Key Features: High Speed High Responsivity Spectral Range 900nm to 1700nm Low Back Reflection Applications: Very High Bit Rate Receivers Used in LAN, MAN, WAN; High-speed Optical Communications; Gigabit Ethernet / Fibre Channel; SONET / SDH, ATM; Optical Power Monitoring / Instrumentation

900 to 1700 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm, Pitch 0.25 mm; Responsivity 0.95 A/W; Capacitance 0.65 pF; Package Wraparound Ceramic Submount OSI Optoelectronics’ FCI-InGaAs-XXM series of high speed, IR sensitive InGaAs photodiode arrays are available with 4, 8, 12 and 16 channels. Each anti-reflective (AR) coated element is capable of 2.5 Gbps data rates exhibiting high responsivity from 1100 to 1620 nm. The FCI-InGaAs-XXM photodiode arrays come standard on a wraparound ceramic submount and are designed for multi-channel fiber applications based on standard 250 nm pitch fiber ribbon. Also, 0.500 mm pitch board level contacts make it easy to connect the photodiode arrays to your circuit. Upon request, 55 µm active area, two channel arrays are available. Please contact AMS Technologies for more details. Key Features: High Speed High Responsivity Low Noise Active Area Diameter 75 µm Pitch 250 µm Spectral Range 900 to 1700 nm Applications: High-speed Optical Communications; Single Mode (SM) / Multi Mode (MM) Fiber Optic Receivers; Gigabit Ethernet / Fibre Channel; SONET/SDH, ATM; Optical Taps

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.075 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 1.5 to 20 pF; Package TO-46, Fiber Receptacles FC, SC, ST, SMA Available OSI Optoelectronics’ FCI-InGaAs-XXX series of high-speed InGaAs photodiodes with active area diameters of 75, 120, 300, 400 and 500 µm exhibit the characteristics and need for datacom and telecom applications. Low capacitance, low dark current and high responsivity from 1100 to 1620 nm make these devices ideal for high bit rate receivers used in LAN, MAN, WAN and other high-speed communication systems. FCI-InGaAs-XXX photodiodes are packaged in 3-lead isolated TO-46 cans with anti-reflective (AR) coated flat windows or micro lenses to enhance coupling efficiency. FCI-InGaAs-XXX series photodiodes are also offered with FC, SC, ST and SMA receptacles. Key Features: High Speed High Responsivity Low Noise Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Single Mode (SM) / Multi Mode (MM) Fiber Optic Receivers; Gigabit Ethernet/Fibre Channel; SONET/SDH, ATM; Optical Taps

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.07 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 0.65 to 20 pF; Package Angled Ceramic Substrate OSI Optoelectronics’ FCI-InGaAs-XXX-ACER series of high-speed InGaAs photodiode on angled ceramic submount with active area diameters of 70, 120, 300, 400 and 500 µm is part of OSI Optoelectronics' high speed IR sensitive photodiode series mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5° greatly reduces the back reflection. FCI-InGaAs-XXX-ACER chips can be epoxy/eutectic mounted onto the angled ceramic substrate. Key Features: 5° Angle Ceramic Low Noise High Responsivity High Speed Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Gigabit Ethernet/Fibre Channel; SONET / SDH, ATM; Diode Laser Monitor; Instrumentation