Multi-element Silicon Array Detectors
Product information "Multi-element Silicon Array Detectors"
970 nm Band Optimized; Active Area 1.8 to 3.9 mm2; AA Dimensions 1.75 x 1.22, 4.39 x 0.89, 6.45 x 0.28 mm, Pitch 0.31, 0.99, 1.59 mm; Responsivity 0.06 to 0.65 A/W; Capacitance 12 to 340 pF; Package Ceramic, PCB, 40 Pin DIP
OSI Optoelectronics’ multi-element and multi-channel silicon array photodetectors consist of a number of single-element photodiodes laid adjacent to each other forming a one-dimensional sensing area on a common cathode substrate.
These array detectors can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low electrical crosstalk and super-high uniformity between adjacent elements allowing very high precision measurements.
Arrays offer a low-cost alternative when a large number of detectors is required. The detectors are optimized for either UV (A5V-35UV variant), visible or near IR range. Then can be either operated in photoconductive mode (reverse biased, A5C variants) to decrease the response time, or in photovoltaic mode (unbiased, A2V and A5V variants) for low-drift applications.
The A2V-16 version can be coupled to any scintillator crystal for measuring high-energy photons in the X-ray and gamma-ray region of the electromagnetic spectrum. In addition, they have been mechanically designed, so that several of them can be mounted end to end to each other in applications where more than 16 elements are needed.
Key Features:
- Common Substrate Array
- Ultra-low Crosstalk
- UV Enhanced (A5V-35UV)
- Low Dark Current
- Low Capacitance
- Solderable
Applications: Level Meters; Optical Spectroscopy; Position Sensors; Computed Tomography Scanners; Medical Equipment; High-speed Photometry
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