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Multi-element Silicon Array Detectors

Product information "Multi-element Silicon Array Detectors"

970 nm Band Optimized; Active Area 1.8 to 3.9 mm2; AA Dimensions 1.75 x 1.22, 4.39 x 0.89, 6.45 x 0.28 mm, Pitch 0.31, 0.99, 1.59 mm; Responsivity 0.06 to 0.65 A/W; Capacitance 12 to 340 pF; Package Ceramic, PCB, 40 Pin DIP

OSI Optoelectronics’ multi-element and multi-channel silicon array photodetectors consist of a number of single-element photodiodes laid adjacent to each other forming a one-dimensional sensing area on a common cathode substrate.

These array detectors can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low electrical crosstalk and super-high uniformity between adjacent elements allowing very high precision measurements.

Arrays offer a low-cost alternative when a large number of detectors is required. The detectors are optimized for either UV (A5V-35UV variant), visible or near IR range. Then can be either operated in photoconductive mode (reverse biased, A5C variants) to decrease the response time, or in photovoltaic mode (unbiased, A2V and A5V variants) for low-drift applications.

The A2V-16 version can be coupled to any scintillator crystal for measuring high-energy photons in the X-ray and gamma-ray region of the electromagnetic spectrum. In addition, they have been mechanically designed, so that several of them can be mounted end to end to each other in applications where more than 16 elements are needed.

Key Features:

  • Common Substrate Array
  • Ultra-low Crosstalk
  • UV Enhanced (A5V-35UV)
  • Low Dark Current
  • Low Capacitance
  • Solderable


Applications: Level Meters; Optical Spectroscopy; Position Sensors; Computed Tomography Scanners; Medical Equipment; High-speed Photometry

Manufacturer "OSI Optoelectronics"
OSI Optoelectronics is a leading provider of advanced optoelectronics and electronic assemblies. These technical elements are key to enabling critical functions such as analytics and monitoring, test and measurement, communication and tracking, and imaging in a wide variety of industries, including: Aerospace & Defense, Medical & Life Sciences, Automation & Industrial Production and Automotive & Consumer Electronics.
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Information on the manufacturer (information obligations under the GPSR Product Safety Regulation)
OSI Optoelectronics
12525 Chadron Ave
CA 90250 Hawthorne, United States
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Plastic Molded Si Photodiodes
Plastic Molded Si Photodiodes

350 to 1100 nm; Active Area 0.81 to 16 mm2; AA Dia. 1.02 Round, 2.31 x 1.68 to 4.00 x 4.00 mm Rect.; Rise Time 11 to 100 ns; Responsivity 0.15 to 0.55 A/W; Capacitance 2 to 330 pF; Package Leadless Ceramic, Resin Molded, Plastic Molded OSI Optoelectronics offers a line of high quality and reliability plastic encapsulated photodiodes. These molded devices are available in a variety of shapes and sizes of photodetectors and packages, including industry standard T1 and T13/4, flat and lensed side lookers as well as a surface mount version (SOT-23). They are excellent for mounting on PCB and hand-held devices in harsh environments. They have an excellent response in the NIR spectrum and are also available with visible blocking compounds, transmitting only in the 700-1100 nm range. They offer fast switching time, low capacitance as well as low dark current. They can be utilized in both photoconductive and photovoltaic modes of operation. Key Features: High-density & Rugged Molded Package Low Capacitance Low Dark Current Applications: Bar Code Readers; Measurement & Control; IR Remote Control; Reflective Switches

Product number: SW11052
Manufacturer: OSI Optoelectronics

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