High-performance InGaAs Avalanche Photodiodes APD

Product number: SW11550

Manufacturer: Excelitas Technologies

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Product information "High-performance InGaAs Avalanche Photodiodes APD"

Active Area Diameter 50-200 µm; Responsivity 9.3 A/W; Capacitance 0.6-2.5 pF; NEP 15-100 fW/√Hz; Dark Current 25-70 nA; Package TO-18, Ceramic Carrier; System Bandwidth 800-2,000 MHz

Excelitas’ high-performance InGaAs avalanche photodiode (APD) series C30644, C30645 and C30662 are high-speed, large-area InGaAs/lnP avalanche photodiodes. These devices provide high quantum efficiency, high responsivity and low noise in the spectral range between 1100 nm and 1700 nm. They are optimized for use at a wavelength of 1550 nm, ideally suitable for use in eye-safe laser range finding systems.

These high-performance InGaAs APDs are supplied in a hermetically sealed TO-18 package, with the chip mounted close to the window to allow easy interfacing with the optical system, or on a ceramic carrier. The C30645 and C30662 series APD are also offered in the C30659 series of APD receivers with low-noise transimpedance amplifier , as well as built-in thermo-electric cooler (the LLAM series ). Other custom packages are also available on request.

Applications: LiDAR; Laser Range Finder; Scanning Video Imager; Confocal Microscope; Free-space Communication; Spectrophotometers; Fluorescence Detection; Luminometer; DNA Sequencer; Particle Sizing

Part Number

Active Diameter

Capacitance

^{System Bandwidth}

Dark Current

Breakdown Voltage

Temperature Coefficient

Typical Gain

Responsivity 1550 nm

NEP

Package

Window

Download

min

max

Material

Aperture

C30662EH

200 µm

2.5 pF

800 MHz

70 nA

40 V

90 V

0.14 V/°C

10

9.3 A/W

100 fW/√Hz

TO-18

Glass

Large

Datasheet

C30662EH-1

200 µm

2.5 pF

800 MHz

70 nA

40 V

90 V

0.14 V/°C

10

9.3 A/W

100 fW/√Hz

TO-18

Glass

Large

Datasheet

C30662EH-3

200 µm

2.5 pF

800 MHz

70 nA

40 V

90 V

0.14 V/°C

10

9.3 A/W

100 fW/√Hz

TO-18

Glass

Small

Datasheet

C30662ECERH

200 µm

2.5 pF

800 MHz

70 nA

40 V

90 V

0.14 V/°C

10

9.3 A/W

100 fW/√Hz

Ceramic Carrier

N/A

Datasheet

C30662ECERH-1

200 µm

2.5 pF

800 MHz

70 nA

40 V

90 V

0.14 V/°C

10

9.3 A/W

100 fW/√Hz

Ceramic Carrier

N/A

Datasheet

C30645EH

80 µm

1.25 pF

1,000 MHz

35 nA

40 V

90 V

0.14 V/°C

10

9.3 A/W

25 fW/√Hz

TO-18

Silicon

Small

Datasheet

C30645ECERH

80 µm

1.25 pF

1,000 MHz

35 nA

40 V

90 V

0.14 V/°C

10

9.3 A/W

25 fW/√Hz

Ceramic Carrier

N/A

Datasheet

C30644EH

50 µm

0.6 pF

2,000 MHz

25 nA

40 V

90 V

0.14 V/°C

10

9.3 A/W

15 fW/√Hz

TO-18

-

C30644ECERH

50 µm

0.6 pF

2,000 MHz

25 nA

40 V

90 V

0.14 V/°C

10

9.3 A/W

15 fW/√Hz

Ceramic Carrier

N/A

-

Please note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden.

Manufacturer "Excelitas Technologies"

Excelitas’ thermal infrared sensors like thermopiles or pyroelectric IR detectors (PIR) are used for motion detection, presence monitoring, temperature measurement and gas detection. Excelitas’ broad portfolio of sensors, detectors and emitters also includes phototransistors, photodiodes, PIN photodiodes, avalanche photodiodes (APD), ambient light sensors, single photon detectors and many more.

The products can be found in a vast array of applications across automotive, consumer products, defense and aerospace, industrial, medical, safety and security and sciences sectors.

Please note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden.

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1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD

Active Area Diameter 0.8-3 mm; Responsivity 25-36 A/W; Capacitance 2-10 pF; NEP 14-20 fW/√Hz; Dark Current 50, 100 nA; Package TO-5, TO-8Excelitas’ 1064 nm long-wavelength enhanced Silicon Avalanche Photodiodes (APDs) C30954EH, C30955EH and C30956EH are made using a double-diffused “reach-through” structure. The design of these photodiodes is such that their long-wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties.The C30954EH, C30955EH and C30956EH long-wavelength enhanced APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low-noise, low-capacitance, and fast rise and fall times characteristics.To help simplify many design needs, these APDs are also available in Excelitas’ high-performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. In addition, these APDs are also available with built-in thermo-electric cooler for easier temperature control.The C30954EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 0.8 mm active area diameter in a TO-5 package.The C30955EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 1.5 mm active area diameter in a TO-5 package.The C30956EH large-area, long-wavelength enhanced silicon avalanche Photodiode (Si APD) provides a 3 mm active area diameter in a TO-8 package.Key Features:Active Area Diameter: 0.8, 1.5, 3 mmHigh Quantum Efficiency at 1060 nm: ≤40%Enhanced Long-wave Response: >900 nmFast Response Time: 2 nsWide Operating Temperature RangeLow Capacitance @100 kHz: 2 to 10 pFResponsivity @1060 nm: 25 to 36 A/WDark Current: 50, 100 nASpectral Noise Current: 0.5 pA/√HzNEP @1060 nm: 14 to 20 fW/√HzVop Range: 275 to 425 VHermetically Sealed Packages: TO-5, TO-8RoHS CompliantTEC Option AvailableCustomization Available Upon RequestApplications: Range Finding; LiDAR (Light Detection and Ranging); YAG Laser DetectionPlease note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden.

Product number: SW11551

Manufacturer: