FCI-InGaAs-XXM InGaAs Photodiode Arrays

265-1300 nm; UV, Visible, IR; Active Area 0.1-15 mm²; Responsivity 0.18-0.9 A/W; Dark Current 0.00001-2,000 nA; Package 5 mm Molded Plastic, TO-5, TO-46, TO-52, SMD 1206 EPIGAP offers a wide range of photodiodes in the ultraviolet (UV), visible (VIS) and infrared (IR) spectral range. The EOPD series includes GaP photodiodes, Si and SiC photodiodes as well as InGaAs and AlGaAs photodiodes. Available in 5 mm molded plastic, SMD 1206 and hermetic TO packages (TO-5, TO-46 and TO-52), the EOPD series photodiodes are designed for applications requiring low dark current, high reliability and high sensitivity. Further advantages of the EOPD series photodiodes are degradation stability, good matching with LEDs, no stray light problems and optional miniaturization. The range of standard products is supplemented by specialties with larger active sensor surfaces or extended sensitivity from 150 nm (low UV) up to 2600 nm in the higher infrared range. For customer-specific designs, EPIGAP Optronic’s photodiode components are also available as bare photodiode chips (EOPC series) with high sensitivity and low dark current. Please contact the AMS Technologies photodiode experts to find the right solution that meets your design project’s requirements. We would like to support you and look forward to your inquiries! Key Features: Product Max. Sensitivity Package Active Area Responsivity Dark Current Downloads EOPD-280-0-0.3-1 265 nm TO-52 0.1 mm2 0.18 A/W 10 fA Datasheet EOPD-525-1-0.9-1 525 nm SMD 1206 0.73 mm2 0.3 A/W 5 pA Datasheet EOPD-525-1-0.9-2 525 nm SMD 1206 0.73 mm2 0.3 A/W 5 pA Datasheet EOPD-940-0-2.52 940 nm TO-5 5 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-3.57 940 nm TO-5 10 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-15 940 nm TO-5 15 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-5.8Q 940 nm TO-5 4 x 1.44 mm2 0.6 A/W 0.5 nA Datasheet EOPD-1300-0-0.1-1 1300 nm TO-46 0.1 mm2 0.8 A/W 1 µA Datasheet EOPD-1300-0-0.8-1 1300 nm TO-46 0.8 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-0-1.0-1 1300 nm TO-46 1 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-0-1.5-3 1300 nm TO-46 1.5 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-1-0.3 1300 nm SMD 1206 0.3 mm2 0.8 A/W 0.3 nA Datasheet EOPD-1300-5-0.3 1300 nm 5 mm 0.3 mm2 0.9 A/W 15 pA Datasheet EOPD-1300-0-0.3-1 1300 nm TO-46 0.3 mm2 0.8 A/W 1 µA Datasheet   Applications: Universal measurements in the UV, VIS and IR Range; Sterilization Lamp Monitoring; Flame Monitoring; Alarm Systems; Light Barriers; Daylight Sensors; Nearly Vλ-matched Detectors; Colorimeters; Photometers; Spectroscopy Equipment; Fluorescence; Beam Centering; Optical Encoders; High-speed Optical Communications; Optical LAN; Optical Switches; Ethernet Fiber Channel; Safety Equipment; Light Barriers

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.07 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 0.65 to 20 pF; Package Gull Wing Ceramic Substrate OSI Optoelectronics’ FCI-InGaAs-XXX-LCER series of InGaAs photodiodes on ceramic submount with active area diameters of 70, 120, 300, 400 and 500 µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates. The chips can be epoxy/eutectic mounted onto the ceramic substrate. Key Features: Low Noise High Responsivity High Speed Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Gigabit Ethernet/Fibre Channel; SONET / SDH, ATM; Diode Laser Monitor; Instrumentation

Signal/Idler Degeneracy Wavelenght 810 nm; Photon Pairs Bandwidth FWHM ~3 nm; Pair-generation rate >1x10⁵ Pairs/Second; Max. Output Power of Pump Laser 12 mW, variable. OZ Optics provides entangled photon sources featuring a pair of periodically poled crystals housed within a Mach-Zehnder interferometer. These sources utilize type-2 spontaneous parametric down-conversion (SPDC) to generate polarization-entangled photon pairs. Multiple polarization displacers (PDs) are strategically employed to divide the pairs into two output ports, conveniently located on the front panel as depicted in the photo. Photon pairs are centered at 810 nm with a bandwidth of just a few nanometers. Each source is equipped with a wavelength-stabilized pump laser, variable optical attenuator, and temperature controller to finely adjust phase matching parameters, optimizing efficiency. Integration of a rotatable half-wave plate (HWP) enables control over the number of photon pairs generated in each crystal. Consequently, users can establish polarization reference bases while easily toggling between polarization and energy domains. This feature is anticipated to greatly support the quantum optics R&D community. Key features: Turn-key and room-temperature operation Built-in pump laser and noise-suppression filters Controllable accidental photons rate Applications: Quantum Information Science, quantum metrology, quantum key distribution, quantum computing and information processing