FCI-125G Large Active Area and High-speed Silicon Photodiodes
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Product information "FCI-125G Large Active Area and High-speed Silicon Photodiodes"
850 nm Band Optimized; Active Area 0.018 to 0.126 mm2; AA Dia. 0.150 to 0.400 mm; Responsivity 0.36 A/W; Rise Time 35 to 100 ps; Capacitance 0.65 to 1.73 pF; Package TO-46; Fiber Receptacles FC, ST, SC, SMA Available
800nm band optimized Silicon APD, 0.2mm dia AA Si APD in TO can package with Lens
Avalanche Photodiode Active Area Size: Diameter 5.0 mm Optimal Spectral Band: 630 nm Breakdown Voltage: 150- Low Voltage Operation Package Style: TO-8 style
Name (Si Detector/Array); Model; Wavelength range; Detector size; Risetime; Freq. response; Capacitance; Additional information
OSI Optoelectronics' FCI-125G family of large active area and high-speed silicon PIN photodiodes possesses a large sensing area optimized for short-haul optical data communication applications at 850 nm. The photodetectors exhibit high responsivity, wide bandwidth, low dark current and low capacitance at 3.3 V. They are designed to match the most widely used transimpedance amplifiers.
The photodiodes can be used in all 850 nm transceivers and GBICs up to 1.25 Gbps applications such as Gigabit Ethernet and Fibre Channel. The chip is isolated in a 3-pin TO-46 package with options of micro lens cap or an AR coated flat window. They are also available in standard fiber receptacles such as FC, ST, SC and SMA. For availability in chip form please contact AMS Technologies.
Key Features:
- Silicon Photodiodes
- High Responsivity
- Large Diameter Sensing Area
- Low Capacitance @ 3.3V Bias
Applications: High-speed Optical Communications; Single Mode/Multi Mode Fiber Optic Receivers; Gigabit Ethernet/Fibre Channel; SONET/SDH, ATM