FCI-InGaAs-XXX-X Large Active Area InGaAs Photodiodes
Product information "FCI-InGaAs-XXX-X Large Active Area InGaAs Photodiodes"
900 to 1700 nm; Active Area 0.79, 1.77, 7.07 mm2; AA Dia. 1.0, 1.5, 3.0 mm; Responsivity 0.80 to 0.95 A/W; Capacitance 80 to 1800 pF; Package TO-5, TO-46
FCI-InGaAs-XXX-X series with active area diameters of 1, 1.5 and 3 mm, are part of OSI Optoelectronics' large active area IR sensitive InGaAs range of photodiodes which exhibit excellent responsivity from 1100 to 1620 nm, allowing high sensitivity to weak signals.
These large active area devices are ideal for use in infrared instrumentation and monitoring applications. FCI-InGaAs-XXX-X photodiode chips are isolated in TO-46 or TO-5 packages with a broadband double-sided anti-reflective (AR) coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X large active area photodiodes come with different shunt resistance values of 5, 10, 20, 30 and 40 MΩ.
Key Features:
- High Responsivity
- Large Active Area Diameter: 1, 1.5, 3 mm
- Low Noise
- Spectral Range: 900 to 1700 nm
Applications: Optical Instrumentation; Power Measurement; Infrared Instrumentation, Monitoring and Sensing; Medical Devices