FCI-InGaAs-XXX-X Large Active Area InGaAs Photodiodes

Name: FCI-InGaAs-XXX-X Large Active Area InGaAs Photodiodes
Brand: OSI Optoelectronics
SKU: SW11028
Availability: OutOfStock

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Product number: SW11028

Manufacturer: OSI Optoelectronics

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FCI-InGaAs-XXX-X Large Active Area InGaAs Photodiodes OSI Optoelectronics Datasheet

Product information "FCI-InGaAs-XXX-X Large Active Area InGaAs Photodiodes"

900 to 1700 nm; Active Area 0.79, 1.77, 7.07 mm2; AA Dia. 1.0, 1.5, 3.0 mm; Responsivity 0.80 to 0.95 A/W; Capacitance 80 to 1800 pF; Package TO-5, TO-46

FCI-InGaAs-XXX-X series with active area diameters of 1, 1.5 and 3 mm, are part of OSI Optoelectronics' large active area IR sensitive InGaAs range of photodiodes which exhibit excellent responsivity from 1100 to 1620 nm, allowing high sensitivity to weak signals.

These large active area devices are ideal for use in infrared instrumentation and monitoring applications. FCI-InGaAs-XXX-X photodiode chips are isolated in TO-46 or TO-5 packages with a broadband double-sided anti-reflective (AR) coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X large active area photodiodes come with different shunt resistance values of 5, 10, 20, 30 and 40 MΩ.

Key Features:

High Responsivity
Large Active Area Diameter: 1, 1.5, 3 mm
Low Noise
Spectral Range: 900 to 1700 nm

Applications: Optical Instrumentation; Power Measurement; Infrared Instrumentation, Monitoring and Sensing; Medical Devices

Manufacturer "OSI Optoelectronics"

OSI Optoelectronics is a leading provider of advanced optoelectronics and electronic assemblies. These technical elements are key to enabling critical functions such as analytics and monitoring, test and measurement, communication and tracking, and imaging in a wide variety of industries, including: Aerospace & Defense, Medical & Life Sciences, Automation & Industrial Production and Automotive & Consumer Electronics.

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APD Silicon Avalanche Photodiodes

800 nm Band Optimized; Active Area 0.03 to 19.6 mm2; AA Dia. 0.2 to 5.0 mm; Responsivity 20 to 50 A/W; Capacitance 1.5 to 105 pF; Package TO-5, TO-8, TO-52 OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications. Optimized for the 800 nm wavelength band, the APD series is available with five different active area sizes ranging from 0.2 to 5.0 mm in diameter. Depending on active area size, the devices are supplied in TO-5, TO-8 or TO-52 packages. Key Features: High Speed Responsivity / QE High Bandwidth / Fast Response Low Noise Low Bias Voltage Hermetically Sealed TO-Packages Applications: High Speed Optical Communications; Laser Range Finders; Bar Code Readers; Optical Remote Control; Medical Equipment; High Speed Photometry

Product number: SW11018

REQUEST PRICING AND AVAILABILITY

- Get your individual quote.
- Technical compatibility review included.
- Volume discounts available.

No obligation. Direct access to our engineering team.