Blue-enhanced Si Photodiodes

410, 436 nm Band Optimized; Active Area 0.81 to 200 mm2; AA Dia. 1.02 to 11.3 mm Round, 1.0 x 1.0 to 10 x 20 mm Rect.; Rise Time 0.02 to 45 µs; Responsivity 0.15 to 0.21 A/W; Capacitance 35 to 17,000 pF; Package TO-5, TO-8, TO-18, BNC, Metal, Plastic, Special

OSI Optoelectronics’ blue-enhanced photovoltaic detector series is utilized for applications requiring high sensitivity in the visible-blue region and moderate response speeds. These detectors provide additional sensitivity in the 350 to 550 nm region when compared to the regular photovoltaic devices. For visible and near IR applications i.e. spectral response ranges from 350 to 1100 nm, regular photovoltaic devices can be considered.

These detectors feature high shunt resistance and low noise and exhibit long term stability. Unbiased operation of these detectors offers stability under wide temperature variations in DC or low-speed applications. For high light levels (>10mW/cm2), the photoconductive series detectors should be considered for better linearity.

These blue-enhanced photovoltaic detectors are not designed to be reverse biased! Very slight improvement in response time may be obtained with a slight bias. Applying a reverse bias of more than a few volts (>3 V) will permanently damage the detectors. If faster response times are required, the photoconductive series should be considered.

Please refer to the photovoltaic mode (PV) paragraph in the application note “Photodiode Characteristics and Applications” available under “Downloads” for detailed information on electronics set up.

Key Features:

• Blue Enhanced
• High Speed Response
• Low Capacitance
• Low Dark Current
• Wide Dynamic Range
• High Responsivity
• Ultra Low Noise
• High Shunt Resistance

Applications: Pulse Detectors; Optical Communications; Bar Code Readers; Optical Remote Control; Medical Equipment; High-speed Photometry; Colorimeters; Spectroscopy Equipment; Fluorescence