Photovoltaic Planar Diffused Si Photodiodes

350 to 1100 nm; Active Area 0.81 to 613 mm2; AA Dia. 1.02 to 27.9 mm Round, 0.93 x 0.93 to 10 x 20 mm Rect.; Rise Time 0.02 to 45 µs; Responsivity 0.47 to 0.65 A/W; Capacitance 1 to 9,500 pF; Package TO-5, TO-8, TO-18, Lo-Prof, BNC, Plastic, Metal, Special

OSI Optoelectronics’ photovoltaic planar diffused silicon photodiode series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series.

The spectral response ranges from 350 to 1100 nm, making the regular photovoltaic devices ideal for visible and near IR applications. For additional sensitivity in the 350 to 550 nm region, the blue enhanced devices are more suitable.

Photovoltaic planar diffused Si detectors have high shunt resistance as well as low noise and exhibit long-term stability. Unbiased operation of these detectors offers stability under wide temperature variations in DC or low-speed applications. For high light levels (>10 mW/cm2), the photoconductive planar diffused Si detectors should be considered for better linearity.

Photovoltaic planar diffused Si detectors are not designed to be reverse biased! Very slight improvement in response time may be obtained with a slight bias. Applying a reverse bias of more than a few volts (>3 V) will permanently damage the detectors. If faster response times are required, photoconductive planar diffused Si detectors should be considered.

Please refer to the photovoltaic mode (PV) paragraph in the application note "Photodiode Characteristics and Applications" available under “Downloads” for detailed information on electronics set up.

Key Features:

• Ultra-low Noise
• High Shunt Resistance
• Blue Enhanced Versions Available
• Wide Dynamic Range

Applications: Colorimeters; Photometers; Spectroscopy Equipment; Fluorescence