Photoconductive Planar Diffused Si Photodiodes
Product information "Photoconductive Planar Diffused Si Photodiodes"
350 to 1100 nm; Active Area 0.2 to 613 mm2; AA Dia. 0.51 to 27.9 mm Round, 1.0 x 1.0 to 10 x 20 mm Rect.; Rise Time 6 to 250 ns; Responsivity 0.47 to 0.65 A/W; Capacitance 1 to 9,500 pF; Package TO-5, TO-8, TO-18, Lo-Prof, BNC, Plastic, Special
OSI Optoelectronics’ photoconductive planar diffused silicon photodiode series are suitable for high-speed and high-sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such AC applications as detection of pulsed laser sources, LEDs, or chopped light.
To achieve high speeds, these detectors should be reverse biased. Typical response times from 10 to 250 ns can be achieved with a 10 V reverse bias, for example. When a reverse bias is applied, capacitance decreases, corresponding directly to an increase in speed.
As indicated in the specification table (see data sheet available under “Downloads”), the reverse bias should not exceed 30 V. Higher bias voltages will result in permanent damage to the detector.
Since a reverse bias generates additional dark current, the noise in the device will also increase with applied bias. For lower noise detectors, the photovoltaic planar diffused Si photodiodes series should be considered.
Please refer to the photoconductive mode (PC) paragraph in the application note "Photodiode Characteristics and Applications" available under “Downloads” for detailed information on electronics set up.
Key Features:
- High-speed Response
- Low Capacitance
- Low Dark Current
- Wide Dynamic Range
- High Responsivity
Applications: Pulse Detectors; Optical Communications; Bar Code Readers; Optical Remote Control; Medical Equipment; High-speed Photometry
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