VPSL Virtual Point Source Laser Diodes

705-852 nm; Optical Output Power 40, 50 mW; Threshold Current 20, 30 mA; Forward Current 75 mA; Beam Divergence 9°/18°, 9°/22° Ushio Europe’s HL7xxxMG/HL83xxMG Series is a comprehensive lineup of high-performance infrared laser diodes with wavelengths from 705 nm to 852 nm and optical output power ranges from 40 mW to 50 mW (typical). These industrial-quality, reliable laser diodes offer high power and low operating current, long lifetime and energy efficiency. All Ushio Europe infrared near-IR laser diodes are RoHS-compliant. Key Features: High Optical Output Power:40 mW to 50 mW Customised Specifications High Efficiency Low Operating Current TE Mode Oscillation Package Size: f5.6 Part Number (1) Wavelength Optical Output Power Internal Circuit(2) Threshold Current Operating Current Beam Divergence Parallel to Junction Beam Divergence Perpendicular to Junction Downloads HL63163DG 633 nm 100 mW FN 70 mA 170 mA 8.5° 18° Datasheet HL63101MG 637 nm 5 mW CC 15 mA 20 mA 8° 34° Datasheet HL63102MG 637 nm 5 mW AC 15 mA 20 mA 8° 34° Datasheet HL63142DG 637 nm 100 mW AC 50 mA 140 mA 8° 18° Datasheet HL6388MG 637 nm 250 mW LN 100 mA 340 mA 11° 40° Datasheet HL63253MG 637 nm 450 mW FN 200 mA 600 mA 8.5° 33° Datasheet HL63283HD 637 nm 1,200 mW FN 340 mA 1,300 mA 10° 33° Datasheet HL6312G 638 nm 5 mW AC 45 mA 55 mA 8° 31° Datasheet HL6354MG 638 nm 5 mW AC 20 mA 27 mA 8° 25° Datasheet HL6355MG 638 nm 5 mW CC 20 mA 27 mA 8° 25° Datasheet HL6319G 638 nm 10 mW CC 50 mA 70 mA 8° 31° Datasheet HL6320G 638 nm 10 mW AC 50 mA 70 mA 8° 31° Datasheet HL6321G 638 nm 15 mW CC 55 mA 85 mA 8° 30° Datasheet HL6322G 638 nm 15 mW AC 55 mA 85 mA 8° 30° Datasheet HL63603TG 638 nm 120 mW FN 50 mA 165 mA 8.5° 18° Datasheet HL63153AT 638 nm 150 mW FN 75 mA 230 mA 8.5° 18° Datasheet HL63133DG 638 nm 170 mW FN 60 mA 250 mA 9° 17° Datasheet HL63263DG 638 nm 200 mW FN 75 mA 280 mA 8° 14° Datasheet HL63193MG 638 nm 700 mW FN 200 mA 820 mA 9° 35° Datasheet HL63192DG 638 nm 700 mW AC 200 mA 820 mA 9° 35° Datasheet HL63290HD 638 nm 2,200 mW FN 600 mA 2,400 mA 10° 33° Datasheet HL63520HD 638 nm 2,400 mW FN 570 mA 2,400 mA 10° 33° Datasheet HL6358MG 639 nm 10 mW AC 30 mA 40 mA 8° 21° Datasheet HL6359MG 639 nm 10 mW CC 30 mA 40 mA 8° 21° Datasheet HL6395MG 639 nm 10 mW CC 45 mA 55 mA 9° 21° Datasheet HL6396MG 639 nm 10 mW AC 45 mA 55 mA 9° 21° Datasheet HL6360MG 639 nm 20 mW AC 45 mA 65 mA 9° 21° Datasheet HL6361MG 639 nm 20 mW CC 45 mA 65 mA 9° 21° Datasheet HL6397MG 639 nm 20 mW CC 45 mA 65 mA 9° 21° Datasheet HL6398MG 639 nm 20 mW AC 45 mA 65 mA 9° 21° Datasheet HL6323MG 639 nm 30 mW AC 45 mA 95 mA 8.5° 30° Datasheet HL63391DG 639 nm 200 mW CC 65 mA 255 mA 8.5° 14°   HL63392DG 639 nm 200 mW AC 65 mA 255 mA 8.5° 14°   HL6362MG 640 nm 40 mW AC 45 mA 90 mA 10° 21° Datasheet HL6363MG 40 mW CC 45 mA 90 mA 10° 21° Datasheet HL6364DG 642 nm 60 mW AC 65 mA 125 mA 10° 21° Datasheet HL6365DG 642 nm 60 mW CC 65 mA 125 mA 10° 21° Datasheet HL6366DG 642 nm 80 mW AC 80 mA 155 mA 10° 21° Datasheet HL6367DG 642 nm 80 mW CC 80 mA 155 mA 10° 21° Datasheet HL6385DG 642 nm 150 mW LN 110 mA 280 mA 9° 17° Datasheet HL6501MG 658 nm 30 mW CC 45 mA 85 mA 8.5° 22° Datasheet HL65014DG (648.5) nm 150 mW LN 110 mA 280 mA 9° 17° Datasheet HL6544FM 660 nm 50 mW FN 60 mA 115 mA 10° 17° Datasheet HL65051DG 660 nm 120 mW CC 60 mA 175 mA 10° 17° Datasheet HL6545MG 660 nm 120 mW LN 60 mA 175 mA 10° 17° Datasheet HL6748MG 660 nm 120 mW AC 20 mA 30 mA 8° 25°   HL6756MG 660 nm 15 mW AC 20 mA 35 mA 8° 24° Datasheet HL6750MG 685 nm 50 mW CC 30 mA 75 mA 9 21° Datasheet HL6738MG 690 nm 30 mW CC 45 mA 90 mA 8.5° 19° Datasheet 1) Last 2 Letters Display Package Size - MG: f5.6 mm2) Internal Circuit Pin Assignment - AC: LD Anode Common (Flange), PD Cathode Common; CC: LD Cathode Common (Flange), PD Anode Common Applications: Medical; Displays; Defence & Security; Machine Control; Barcode Scanning; Consumer Products; Automotive; Semiconductor Manufacturing, Other

655-1060 nm; Tuning Range 10-140 nm; Typ. Output Power (Extra Cavity) 15-80 mW; Forward Current 120-200 mA; Cavity Length 1000-2000 µmToptica eagleyard’s RWE series of gain chips are modified Fabry-Perot Laser Diodes with an excellent AR coated output facet. While not self-lasing, they are intended to be operated in external cavity setups (ECDL), such as in Littman or Littrow configuration. With external feedback they reveal narrow single frequency operation (a linewidth under 100 kHz is achievable) in combination with superior tuning capabilities over their entire gain width.Within the RWE series, 760 nm gain chips are closing the wavelength gap between popular solutions around 780 nm, while 740 nm gain chips are reaching out 730 nm and below. The popular RWE gain chips at 760/840/1060 nm are additionally available in a widely tunable version. An improved chip structure enables a wider gain and thus broader tunability over 100 nm covering more interesting wavelengths in ECDL setups.Key Features:Edge-emitting Laser Diode Tunable Fabry-Perot Laser for Use in an External Cavity Diode Laser (ECDL)Small Emitting RegionAR Coated Gain Chips (RWE)Broad Wavelength Range: 655 to 1060 nmBroad Tunability: 10-140 nm Tuning Range Line Width Down to Sub-100 kHz ex cavityTyp. Output Power (Extra Cavity): 15 mW to 80 mWForward Current: 120 mA to 200 mACavity Length: 1000 µm to 2000 µmBeam Divergence Parallel (Slow Axis) 10° (FWHM), Perpendicular (Fast Axis) 22° to 29° (FWHM)9 mm 3-Pin TO Package, Sealed SOT HousingMonitor Diode  Product Wavelength Typ. Output Power With Cavity Tuning Range Specifics RWE-0655-00505-2000-SOT02-0000 655 nm 20 mW 650-660 nm Tunable RWE-0670-00703-1000-SOT02-0000 670 nm 20 mW 665-675 nm Tunable RWE-0690-00703-1000-SOT02-0000 690 nm 15 mW 675-692 nm Tunable RWE-0740-02000-1500-SOT02-0000 740 nm 40 mW 723-742 nm Tunable RWE-0760-02010-1500-SOT12-0000  760 nm 80 mW 752-772 nm Tunable RWE-0790-03010-1500-SOT02-0000 790 nm 50 mW 760-795 nm Tunable RWE-0810-03010-1300-SOT02-0000 810 nm 70 mW 780-810 nm Tunable RWE-0840-06010-1500-SOT02-0000 840 nm 50 mW 810-860 nm Tunable RWE-0840-06515-1500-SOT02-0000 840 nm 50 mW 800-860 nm Widely Tunable RWE-0860-06010-1500-SOT02-0000 860 nm 80 mW 830-880 nm Tunable RWE-0920-04010-1500-SOT02-0000 920 nm 15 mW 880-930 nm Tunable RWE-0980-08020-1500-SOT02-0000 980 nm 50 mW 900-1000 nm Tunable RWE-1060-10020-1500-SOT02-0000 1060 nm 80 mW 980-1090 nm Tunable RWE-1060-10525-1500-SOT02-0000 1060 nm 80 mW 960-1100 nm Widely Tunable  Applications: Record and Excite Hyperfine Atomic Transitions in Superior Resolution; Reference Standards such as Atomic Clocks; Quantum Field Technologies; Precise Spectroscopic Handling of Various Atomic TransitionsDatasheet

780 nm; Selectable Linewidth <0.1 pm; Output Power 80 mW; Threshold Current ≤70 mA; Slope Efficiency ≤1.4 W/A; Side Mode Suppression Ratio ≥30 dB The RWS stabilized ridge waveguide laser diode is Toptica eagleyard’s low-cost approach for volume applications at 780 nm. With its high coherence, it is perfectly suited for interferometry and metrology. Toptica eagleyard migrated the RWS technology from a big 8-pin TO package to this small, hermetically sealed, 8-pin TO-5 package, while keeping full functionality like the integrated TEC (thermoelectric cooler), thermistor and monitor diode. Mode‐hops may appear, but the user can always achieve single mode operation by selecting the operating conditions of the laser diode. This laser diode features built-in grating stabilizing the wavelength and provide a low-cost approach based on less tight specifications. Its entire resonator consists of a periodic structure. Thus, the device operates on a single resonator mode, emitting quasi-monochromatic radiation with a very small line width and low phase noise. Given the right operating conditions, this laser diode can have very low-intensity noise because of the lack of mode partition noise. Due to the Gaussian mode, the output is diffraction-limited Key Features: Wavelength: 780 nm Monolithically Integrated Wavelength Stabilization (On Chip) Single Frequency Operation Small Selectable Linewidth: <0.1 pm Output Power: 80 mW Threshold Current: ≤70 mA Slope Efficiency: ≤1.4 W/A Side Mode Suppression Ratio (SMR): ≥30 dB Compact Design: Industry Standard (JEDEC) 8-pin TO-5 Package Hermetically Sealed TEC (Thermoelectric Cooler) & Thermistor Integrated Monitor Diode Integrated Cost Reduction at Higher Volumes Applications: Interferometry, Laser Doppler Velocimetry and Vibrometry; THz Generation, Raman Spectroscopy; Rubidium Spectroscopy; Seed Laser for LIDAR Systems