RWE Gain Chips
Product information "RWE Gain Chips"
655-1060 nm; Tuning Range 10-140 nm; Typ. Output Power (Extra Cavity) 15-80 mW; Forward Current 120-200 mA; Cavity Length 1000-2000 µm
Toptica eagleyard’s RWE series of gain chips are modified Fabry-Perot Laser Diodes with an excellent AR coated output facet. While not self-lasing, they are intended to be operated in external cavity setups (ECDL), such as in Littman or Littrow configuration. With external feedback they reveal narrow single frequency operation (a linewidth under 100 kHz is achievable) in combination with superior tuning capabilities over their entire gain width.
Within the RWE series, 760 nm gain chips are closing the wavelength gap between popular solutions around 780 nm, while 740 nm gain chips are reaching out 730 nm and below. The popular RWE gain chips at 760/840/1060 nm are additionally available in a widely tunable version. An improved chip structure enables a wider gain and thus broader tunability over 100 nm covering more interesting wavelengths in ECDL setups.
Key Features:
- Edge-emitting Laser Diode
- Tunable Fabry-Perot Laser for Use in an External Cavity Diode Laser (ECDL)
- Small Emitting Region
- AR Coated Gain Chips (RWE)
- Broad Wavelength Range: 655 to 1060 nm
- Broad Tunability: 10-140 nm Tuning Range
- Line Width Down to Sub-100 kHz ex cavity
- Typ. Output Power (Extra Cavity): 15 mW to 80 mW
- Forward Current: 120 mA to 200 mA
- Cavity Length: 1000 µm to 2000 µm
- Beam Divergence Parallel (Slow Axis) 10° (FWHM), Perpendicular (Fast Axis) 22° to 29° (FWHM)
- 9 mm 3-Pin TO Package, Sealed SOT Housing
- Monitor Diode
| Product | Wavelength | Typ. Output Power With Cavity | Tuning Range | Specifics |
| RWE-0655-00505-2000-SOT02-0000 | 655 nm | 20 mW | 650-660 nm | Tunable |
| RWE-0670-00703-1000-SOT02-0000 | 670 nm | 20 mW | 665-675 nm | Tunable |
| RWE-0690-00703-1000-SOT02-0000 | 690 nm | 15 mW | 675-692 nm | Tunable |
| RWE-0740-02000-1500-SOT02-0000 | 740 nm | 40 mW | 723-742 nm | Tunable |
| RWE-0760-02010-1500-SOT12-0000 | 760 nm | 80 mW | 752-772 nm | Tunable |
| RWE-0790-03010-1500-SOT02-0000 | 790 nm | 50 mW | 760-795 nm | Tunable |
| RWE-0810-03010-1300-SOT02-0000 | 810 nm | 70 mW | 780-810 nm | Tunable |
| RWE-0840-06010-1500-SOT02-0000 | 840 nm | 50 mW | 810-860 nm | Tunable |
| RWE-0840-06515-1500-SOT02-0000 | 840 nm | 50 mW | 800-860 nm | Widely Tunable |
| RWE-0860-06010-1500-SOT02-0000 | 860 nm | 80 mW | 830-880 nm | Tunable |
| RWE-0920-04010-1500-SOT02-0000 | 920 nm | 15 mW | 880-930 nm | Tunable |
| RWE-0980-08020-1500-SOT02-0000 | 980 nm | 50 mW | 900-1000 nm | Tunable |
| RWE-1060-10020-1500-SOT02-0000 | 1060 nm | 80 mW | 980-1090 nm | Tunable |
| RWE-1060-10525-1500-SOT02-0000 | 1060 nm | 80 mW | 960-1100 nm | Widely Tunable |
Applications: Record and Excite Hyperfine Atomic Transitions in Superior Resolution; Reference Standards such as Atomic Clocks; Quantum Field Technologies; Precise Spectroscopic Handling of Various Atomic TransitionsDatasheet
Please note that TOPTICA eagleyard products are not availble from us in Denmark, Finland, Iceland, Norway, and Sweden.
TOPTICA eagleyard started as a spin-off from the Ferdinand-Braun Institut (FBH) in 2002. The core competence is the development, production and sale of innovative high-power laser diodes based on GaAs (Gallium Arsenide). Its portfolio contains laser diodes with wavelengths ranging from 630 nm to 1120 nm (DFB-lasers, tapered lasers, ridge waveguide lasers and broad area lasers). These laser diodes are addressing a variety of applications such as aerospace and defense, spectroscopy, medical instrumentation, test & measurement and material analysis.
Please note that TOPTICA eagleyard products are not availble from us in Denmark, Finland, Iceland, Norway, and Sweden.