InGaAs TE Cooled Photodiodes

1250-1650 nm; Responsivity 25 A/W; Breakdown Voltage 40-70 V; Dark Current 1 nA; Package 3-pin TO 46 Wooriro’s APD module for OTDR applications is based on an InGaAs/InP avalanche photodiode (APD) in TO-46 package. This module’s APD is pigtailed, and the module can be ordered either without connector or with a SC, LC or FC type optical connector in UPC or APC version. Designed for an optical wavelength range of 1250 nm to 1650 nm, the APD module for OTDR features a very low dark current of 1 nA typical at 98% breakdown voltage. Typical responsivity is 25 A/W at 1550 nm wavelength and 10 nW optical input power. Key Features: InGaAs/InP Avalanche Photodiode APD Low Dark Current: 1 nA (Typical, @0.98 x Breakdown Voltage) High Reliability Optical Wavelength Range: 1250 nm to 1650 nm Responsivity: 25 A/W Typ. (VAPD = 0.98 VBR, λ = 1550 nm, Pin = 10 nW) Breakdown Voltage VBR: 40 V to 70 V (Id = 10 µA) Temperature Coefficient of VBR: 90 mV/°C (-40 °C to +85 °C) Dimensions: Ø 6 mm x Length 20.2 mm Applications: OTDR; Optical Sensor; Optical Test Instruments

Integrated TIA With Burst Mode; 1260-1640 nm; Responsivity 10.5 A/W; Breakdown Voltage 23-31 V; Dark Current 500 nA; Package 6-pin TO 46 Wooriro’s avalanche photodiode (APD) with burst-mode TIA is packaged in a 6-pin TO-46 case with aspherical lens cap. The APD’s integrated transimpedance amplifier (TIA) can be operated in a burst mode that lifts the input data rate from 1.25 Gb/s continuous to 10.3125 Gb/s burst. Users can control the burst mode via a logic signal connected to pin 5 of the APD’s TO-46 case. Designed for an optical wavelength range of 1260 nm to 1640 nm, the APD with burst-mode TIA features a dark current of 500 nA typical at 98% breakdown voltage. Typical responsivity is 10.5 A/W at 1310 nm wavelength and 50 µW optical input power. Key Features: Integrated Transimpedance Amplifier (TIA) Burst Mode for 10 Gb/s Standard TO-46 Package With Aspherical Lens Cap Optical Wavelength Range: 1260 nm to 1640 nm Responsivity: 10.5 A/W Typ. (λ = 1310 nm, Pin = 50 µW, VAPD = 0.95 VBR) TIA Supply Voltage: 3.3 V (2.97 V to 3.63 V) TIA Supply Current: 40 mA Typ. Transimpedance: 2 kΩ Typ. (Differential, 50 Ω on Each Output) APD Breakdown Voltage VBR: 23 V to 31 V Temperature Coefficient of VBR: 20 mV/°C (-40 °C to +85 °C) APD Dark Current: 500 nA (Typical, @0.9 x Breakdown Voltage) Sensitivity: -32 dBm Typ. (CM @Continuous Mode 10.3125 Gb/s NRZ, PRBS = 231 – 1, BER = 1E-3, ER = 5.97 dB, λ = 1310 nm) Dimensions: Ø 4.67 mm x Length 3.38 mm Applications: IEEE 802.3av 10G 10G-EPON OLT

265-1300 nm; UV, Visible, IR; Active Area 0.1-15 mm²; Responsivity 0.18-0.9 A/W; Dark Current 0.00001-2,000 nA; Package 5 mm Molded Plastic, TO-5, TO-46, TO-52, SMD 1206 EPIGAP offers a wide range of photodiodes in the ultraviolet (UV), visible (VIS) and infrared (IR) spectral range. The EOPD series includes GaP photodiodes, Si and SiC photodiodes as well as InGaAs and AlGaAs photodiodes. Available in 5 mm molded plastic, SMD 1206 and hermetic TO packages (TO-5, TO-46 and TO-52), the EOPD series photodiodes are designed for applications requiring low dark current, high reliability and high sensitivity. Further advantages of the EOPD series photodiodes are degradation stability, good matching with LEDs, no stray light problems and optional miniaturization. The range of standard products is supplemented by specialties with larger active sensor surfaces or extended sensitivity from 150 nm (low UV) up to 2600 nm in the higher infrared range. For customer-specific designs, EPIGAP Optronic’s photodiode components are also available as bare photodiode chips (EOPC series) with high sensitivity and low dark current. Please contact the AMS Technologies photodiode experts to find the right solution that meets your design project’s requirements. We would like to support you and look forward to your inquiries! Key Features: Product Max. Sensitivity Package Active Area Responsivity Dark Current Downloads EOPD-280-0-0.3-1 265 nm TO-52 0.1 mm2 0.18 A/W 10 fA Datasheet EOPD-525-1-0.9-1 525 nm SMD 1206 0.73 mm2 0.3 A/W 5 pA Datasheet EOPD-525-1-0.9-2 525 nm SMD 1206 0.73 mm2 0.3 A/W 5 pA Datasheet EOPD-940-0-2.52 940 nm TO-5 5 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-3.57 940 nm TO-5 10 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-15 940 nm TO-5 15 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-5.8Q 940 nm TO-5 4 x 1.44 mm2 0.6 A/W 0.5 nA Datasheet EOPD-1300-0-0.1-1 1300 nm TO-46 0.1 mm2 0.8 A/W 1 µA Datasheet EOPD-1300-0-0.8-1 1300 nm TO-46 0.8 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-0-1.0-1 1300 nm TO-46 1 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-0-1.5-3 1300 nm TO-46 1.5 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-1-0.3 1300 nm SMD 1206 0.3 mm2 0.8 A/W 0.3 nA Datasheet EOPD-1300-5-0.3 1300 nm 5 mm 0.3 mm2 0.9 A/W 15 pA Datasheet EOPD-1300-0-0.3-1 1300 nm TO-46 0.3 mm2 0.8 A/W 1 µA Datasheet   Applications: Universal measurements in the UV, VIS and IR Range; Sterilization Lamp Monitoring; Flame Monitoring; Alarm Systems; Light Barriers; Daylight Sensors; Nearly Vλ-matched Detectors; Colorimeters; Photometers; Spectroscopy Equipment; Fluorescence; Beam Centering; Optical Encoders; High-speed Optical Communications; Optical LAN; Optical Switches; Ethernet Fiber Channel; Safety Equipment; Light Barriers

1100 to 1650 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm; Responsivity 1,600 to 2,500 V/W; Transimpedance 2,800 Ω; Package TO-46 OSI Optoelectronics’ FCI-H125/250G-InGaAs-75 series are compact and integrated high-speed InGaAs photodetectors with wide dynamic range transimpedance amplifiers (TIA). Combining the detector with the TIA in a hermetically sealed 4-pin TO-46 package provides ideal conditions for high-speed signal amplification. High speed and superior sensitivity make these devices ideal for high bit rate receivers used in LAN, MAN, WAN and other high speed communication systems. TO packages come standard with a lensed cap to enhance coupling efficiency, or with a broadband double-sided anti-reflective (AR) coated flat window. The FCI-H125/250G-InGaAs-75 series are also offered with FC, SC, ST and SMA receptacles. Key Features: InGaAs Photodetector / Low Noise Transimpedance Amplifier High Bandwidth / Wide Dynamic Range Hermetically Sealed TO-46 Can Single +3.3 to +5 V Power Supply Spectral Range 1100 to 1650 nm Differential Output Applications: High-speed Optical Communications; Gigabit Ethernet; Fibre Channel; ATM; SONET OC-48 / SDH STM-16

1100 to 1650 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm; Responsivity 16 V/mW; Transimpedance 18 kΩ; Package TO-46 OSI Optoelectronics’ FCI-H622M-InGaAs-75 is a high-speed 75 µm InGaAs photodetector integrated with a wide dynamic range transimpedance amplifier (TIA). Combining the detector with the TIA in a hermetically sealed 4-pin TO-46 package provides ideal conditions for high-speed signal detection and amplification. Low capacitance, low dark current and high responsivity of the detector, along with low noise characteristics of the integrated TIA, give rise to excellent sensitivity. In practice, these devices are ideal for datacom and telecom applications. Cost-effective TO-46 packages come standard with a lensed cap for design simplification, or with a broadband double-sided anti-reflective (AR) coated flat window. The FCI-H622M-InGaAs-75 is also offered with FC, SC, ST and SMA receptacles. Key Features: Low Noise Transimpedance Amplifier High Bandwidth Wide Dynamic Range Single +3.3 V Power Supply Spectral Range 1100 to 1650 nm Differential Output Applications: High-speed Optical Communications; ATM; SONET OC-3 / OC-12; SDH STM-1 / STM-4; Optical Receivers

900 to 1700 nm; Active Area 0.07 mm2; AA Dia. 0.3 mm, Pitch 0.5 mm; Responsivity 0.80 to 0.85 A/W; Capacitance 8 to 10 pF; Package Flip Chip Mountable OSI Optoelectronics’ FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They are available as single element diodes or 4 - or 8- element arrays with an active area of 300 µm each. These back-illuminated InGaAs photodiodes/arrays are designed to be flip chip mounted (active area facing up), or assembled face down minimizing the overall dimensions. These low inductance, low dark current, and low capacitance back illuminated photodiodes/arrays come with or without ceramic substrates. Key Features: Back Illumination High Responsivity on Both Front and Back Low Noise Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Multichannel Fiber Optic Receiver; Power Monitoring; Single Mode (SM) Multi Mode (MM) Fiber Optic Receiver; Fast Ethernet, SONET/SDH OC-3/STM-1 ATM; Instrumentation and Analog Receivers

910 to 1650 nm; Active Area 0.001 mm2; AA Dia. 0.036 mm; Responsivity 0.75 to 0.85 A/W; Capacitance 0.16, 0.2 pF; Package Special Chip-size OSI Optoelectronics' FCI-InGaAs-36C is an OC-192 (SONET/SDH) capable photosensitive device, exhibiting low dark current and good performance stability. Both anode and cathode contacts appear on the chip's top facet. FCI-InGaAs-36C is an ideal component in high-speed optical data transport applications at 10 Gbps, responding to a spectral envelope that spans from 910 to 1650 nm. Key Features: High Speed: 10 Gbps Data Rates Low Dark Current Front Illuminated High Responsivity: Typ. 0.8 A/W @ 1550 nm Diameter of Light Sensitive Area: 36 µm Low Capacitance Applications: High Speed Optical Communications; OC-192; Optical Networking; Optical Measurement