InGaAs TE Cooled Photodiodes

Product number: SW11890

Manufacturer: New England Photoconductor

Downloads

Product information "InGaAs TE Cooled Photodiodes"

Wavelength Range 1.2-2.6 µm; Active Area Diameter 0.5-5 mm; Responsivity 0.80-1.3 A/W; Dark Current 0.03-50 nA; Capacitance 60-3500 pF

New England Photoconductor’s range of thermoelectrically (TE) cooled indium gallium arsenide (InGaAs) photodiode series comprises IC1 (1-stage TE cooled, -10°C) or IC2 (2-stage TE cooled, -20°C) versions, suitable for typical wavelengths of 1300 nm or 1550 mm, as well as extended InGaAs PIN photodiodes that can be used for wavelengths up to 2600 nm: IE6C1 C1 (1-stage TE cooled, -10°C) or IE6C2 (2-stage TE cooled, -20°C).

Available in several different packaging options like TO-5, TO-8, TO-37, or TO-66, these detectors feature active areas with diameters ranging from 500 µm all the way to 5 mm. Custom filters, windows and packages are available on request.

Beyond its range of component-type InGaAs photodiodes, New England Photoconductor also provides the AP300-T2 TE cooled InGaAs infrared sensor in a compact (38 mm diameter x 63.5 mm length) and solid case with flexible mounting options – all that is needed is a DC power supply.

Available with active sensor area diameters of 0.5 mm, 1.0 mm and 2.0 mm, the AP300-T2 is an amplified extended InGaAs sensor with a 2-stage thermo-electric cooler (TEC). A low-noise amplifier provides detector-noise limited performance up to 2.6 µm in a compact package. You need an OEM custom configuration? We are happy to help – contact us to discuss your project’s requirements.

Part Number	IC1-1	IC1-2	IC1-3	IC1-5	IC2-1	IC2-2	IC2-3	IC2-5
TEC Stages	1				2
Active Area Diameter	1 mm	2 mm	3 mm	5 mm	1 mm	2 mm	3 mm	5 mm
Responsivity @1300nm Min./Typ.	0.80/0.90 A/W
Responsivity @1550nm Min./Typ.	0.90/0.95 A/W
Typ. NEP @1550 nm	5.0 x 10^-15 W/√Hz	1.0 x 10^-14 W/√Hz	2.0 x 10^-14 W/√Hz	3.0 x 10^-14 W/√Hz	3 x 10^-15 W/√Hz	7 x 10^-15 W/√Hz	1 x 10^-14 W/√Hz	2 x 10^-14 W/√Hz
Dark Current @1 V Typ./Max	0.07/0.35 nA	0.3/1.5 nA	1.0/5.0 nA	2.5/12.5 nA	0.03/0.15 nA	0.15/0.75 nA	0.5/2.5 nA	1.2/6.0 nA
Capacitance @1 V	150 pF	550 pF	1000 pF	3500 pF	150 pF	550 pF	1000 pF	3500 pF
Cut-Off Frequency @1V	18 MHz	4 MHz	2 MHz	0.6 MHz	18 MHz	4 MHz	2 MHz	0.6 MHz
Shunt Resistance	1500 MΩ	300 MΩ	100 MΩ	30 MΩ	3000 MΩ	600 MΩ	200 MΩ	60 MΩ
Max. Reverse Voltage	5 V			2 V	5 V
Test Temperature	-10°C				-20°C
Storage Temperature	-55 to +85°C
Max. Cooler Power	1.0 V @2.0 A			2 V @1.3 A	0.8 V @1.3 A			1.9 V @1.4 A
Package Options	TO-5, TO-37			TO-8, TO-66	TO-5, TO-37			TO-8, TO-66
Thermistor @+25°C	1 KΩ

Part Number	IE6C1-.5	IE6C1-1	IE6C1-2	IE6C2-.5	IE6C2-1	IE6C2-2
TEC Stages	1			2
Active Area Diameter	0.5 mm	1 mm	2 mm	0.5 mm	1 mm	2 mm
Responsivity @2300 nm Min./Typ.	0.9/1.3 A/W
Dark Current @0.5 V Typ./Max.	0.5/4 nA	1.5/7.5 nA	7.5/40 nA	0.2/0.5 nA	0.8/4 nA	4/50 nA
Capacitance @0 V	60 pF	200 pF	800 pF	60 pF	200 pF	800 pF
Shunt Resistance @10 mV	15 kΩ	3 kΩ	1 kΩ	400 kΩ	60 kΩ	20 kΩ
D*	1 x 10¹¹ cm.√Hz/W			2 x 10¹¹ cm.√Hz/W
NEP	4 x 10^-13 W/√Hz	7 x 10^-13 W/√Hz	1 x 10^-12 W/√Hz	3 x 10^-13 W/√Hz	5 x 10^-13 W/√Hz	9 x 10^-13 W/√Hz
Spectral Range	1.2-2.57 µm			1.2-2.55 µm
Cut-Off Frequency (@0 V, -3dB)	50 MHz	15 MHz	5 MHz	50 MHz	15 MHz	5 MHz
Test Temperature	-10°C			-20°C	-20°C	-20°C
Storage Temperature	-40 to +125°C
Package Options	TO-5, TO-8, TO-37, TO-66

Key Features:

Active Area Diameter: 500 µm to 5.0 mm
Responsivity @1300 nm (IC1, IC2 Series): 0.80 A/W (Min.), 0.90 A/W (Typ.)
Responsivity @1550 nm (IC1, IC2 Series): 0.90 A/W (Min.), 0.95 A/W (Typ.)
Responsivity @2300 nm (IE6C1, IE6C2 Series): 0.9 A/W (Min.), 1.3 A/W (Typ.)
Max. Dark Current: 0.15 nA to 50 nA (@1 V, 0.5 V)
Typ. Dark Current: 0.03 nA to 7.5 nA (@5 V, 1 V)
Capacitance: 60 pF to 3500 pF (@0 V, 1 V)

Manufacturer "New England Photoconductor"

Similar products

Avalanche Photodiode APD Module for OTDR

1250-1650 nm; Responsivity 25 A/W; Breakdown Voltage 40-70 V; Dark Current 1 nA; Package 3-pin TO 46 Wooriro’s APD module for OTDR applications is based on an InGaAs/InP avalanche photodiode (APD) in TO-46 package. This module’s APD is pigtailed, and the module can be ordered either without connector or with a SC, LC or FC type optical connector in UPC or APC version. Designed for an optical wavelength range of 1250 nm to 1650 nm, the APD module for OTDR features a very low dark current of 1 nA typical at 98% breakdown voltage. Typical responsivity is 25 A/W at 1550 nm wavelength and 10 nW optical input power. Key Features: InGaAs/InP Avalanche Photodiode APD Low Dark Current: 1 nA (Typical, @0.98 x Breakdown Voltage) High Reliability Optical Wavelength Range: 1250 nm to 1650 nm Responsivity: 25 A/W Typ. (VAPD = 0.98 VBR, λ = 1550 nm, Pin = 10 nW) Breakdown Voltage VBR: 40 V to 70 V (Id = 10 µA) Temperature Coefficient of VBR: 90 mV/°C (-40 °C to +85 °C) Dimensions: Ø 6 mm x Length 20.2 mm Applications: OTDR; Optical Sensor; Optical Test Instruments

Product number: SW11675

Manufacturer:

Avalanche Photodiode APD with Burst-mode TIA

Integrated TIA With Burst Mode; 1260-1640 nm; Responsivity 10.5 A/W; Breakdown Voltage 23-31 V; Dark Current 500 nA; Package 6-pin TO 46 Wooriro’s avalanche photodiode (APD) with burst-mode TIA is packaged in a 6-pin TO-46 case with aspherical lens cap. The APD’s integrated transimpedance amplifier (TIA) can be operated in a burst mode that lifts the input data rate from 1.25 Gb/s continuous to 10.3125 Gb/s burst. Users can control the burst mode via a logic signal connected to pin 5 of the APD’s TO-46 case. Designed for an optical wavelength range of 1260 nm to 1640 nm, the APD with burst-mode TIA features a dark current of 500 nA typical at 98% breakdown voltage. Typical responsivity is 10.5 A/W at 1310 nm wavelength and 50 µW optical input power. Key Features: Integrated Transimpedance Amplifier (TIA) Burst Mode for 10 Gb/s Standard TO-46 Package With Aspherical Lens Cap Optical Wavelength Range: 1260 nm to 1640 nm Responsivity: 10.5 A/W Typ. (λ = 1310 nm, Pin = 50 µW, VAPD = 0.95 VBR) TIA Supply Voltage: 3.3 V (2.97 V to 3.63 V) TIA Supply Current: 40 mA Typ. Transimpedance: 2 kΩ Typ. (Differential, 50 Ω on Each Output) APD Breakdown Voltage VBR: 23 V to 31 V Temperature Coefficient of VBR: 20 mV/°C (-40 °C to +85 °C) APD Dark Current: 500 nA (Typical, @0.9 x Breakdown Voltage) Sensitivity: -32 dBm Typ. (CM @Continuous Mode 10.3125 Gb/s NRZ, PRBS = 231 – 1, BER = 1E-3, ER = 5.97 dB, λ = 1310 nm) Dimensions: Ø 4.67 mm x Length 3.38 mm Applications: IEEE 802.3av 10G 10G-EPON OLT

Product number: SW11676

Manufacturer:

EOPD Molded Plastic, Hermetic TO and SMD Photodiodes

265-1300 nm; UV, Visible, IR; Active Area 0.1-15 mm²; Responsivity 0.18-0.9 A/W; Dark Current 0.00001-2,000 nA; Package 5 mm Molded Plastic, TO-5, TO-46, TO-52, SMD 1206 EPIGAP offers a wide range of photodiodes in the ultraviolet (UV), visible (VIS) and infrared (IR) spectral range. The EOPD series includes GaP photodiodes, Si and SiC photodiodes as well as InGaAs and AlGaAs photodiodes. Available in 5 mm molded plastic, SMD 1206 and hermetic TO packages (TO-5, TO-46 and TO-52), the EOPD series photodiodes are designed for applications requiring low dark current, high reliability and high sensitivity. Further advantages of the EOPD series photodiodes are degradation stability, good matching with LEDs, no stray light problems and optional miniaturization. The range of standard products is supplemented by specialties with larger active sensor surfaces or extended sensitivity from 150 nm (low UV) up to 2600 nm in the higher infrared range. For customer-specific designs, EPIGAP Optronic’s photodiode components are also available as bare photodiode chips (EOPC series) with high sensitivity and low dark current. Please contact the AMS Technologies photodiode experts to find the right solution that meets your design project’s requirements. We would like to support you and look forward to your inquiries! Key Features: Product Max. Sensitivity Package Active Area Responsivity Dark Current Downloads EOPD-280-0-0.3-1 265 nm TO-52 0.1 mm2 0.18 A/W 10 fA Datasheet EOPD-525-1-0.9-1 525 nm SMD 1206 0.73 mm2 0.3 A/W 5 pA Datasheet EOPD-525-1-0.9-2 525 nm SMD 1206 0.73 mm2 0.3 A/W 5 pA Datasheet EOPD-940-0-2.52 940 nm TO-5 5 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-3.57 940 nm TO-5 10 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-15 940 nm TO-5 15 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-5.8Q 940 nm TO-5 4 x 1.44 mm2 0.6 A/W 0.5 nA Datasheet EOPD-1300-0-0.1-1 1300 nm TO-46 0.1 mm2 0.8 A/W 1 µA Datasheet EOPD-1300-0-0.8-1 1300 nm TO-46 0.8 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-0-1.0-1 1300 nm TO-46 1 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-0-1.5-3 1300 nm TO-46 1.5 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-1-0.3 1300 nm SMD 1206 0.3 mm2 0.8 A/W 0.3 nA Datasheet EOPD-1300-5-0.3 1300 nm 5 mm 0.3 mm2 0.9 A/W 15 pA Datasheet EOPD-1300-0-0.3-1 1300 nm TO-46 0.3 mm2 0.8 A/W 1 µA Datasheet Applications: Universal measurements in the UV, VIS and IR Range; Sterilization Lamp Monitoring; Flame Monitoring; Alarm Systems; Light Barriers; Daylight Sensors; Nearly Vλ-matched Detectors; Colorimeters; Photometers; Spectroscopy Equipment; Fluorescence; Beam Centering; Optical Encoders; High-speed Optical Communications; Optical LAN; Optical Switches; Ethernet Fiber Channel; Safety Equipment; Light Barriers

Product number: SW11567

Manufacturer:

FCI-H125/250G-InGaAs-75 InGaAs Photodiode-Amplifier Hybrids

1100 to 1650 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm; Responsivity 1,600 to 2,500 V/W; Transimpedance 2,800 Ω; Package TO-46 OSI Optoelectronics’ FCI-H125/250G-InGaAs-75 series are compact and integrated high-speed InGaAs photodetectors with wide dynamic range transimpedance amplifiers (TIA). Combining the detector with the TIA in a hermetically sealed 4-pin TO-46 package provides ideal conditions for high-speed signal amplification. High speed and superior sensitivity make these devices ideal for high bit rate receivers used in LAN, MAN, WAN and other high speed communication systems. TO packages come standard with a lensed cap to enhance coupling efficiency, or with a broadband double-sided anti-reflective (AR) coated flat window. The FCI-H125/250G-InGaAs-75 series are also offered with FC, SC, ST and SMA receptacles. Key Features: InGaAs Photodetector / Low Noise Transimpedance Amplifier High Bandwidth / Wide Dynamic Range Hermetically Sealed TO-46 Can Single +3.3 to +5 V Power Supply Spectral Range 1100 to 1650 nm Differential Output Applications: High-speed Optical Communications; Gigabit Ethernet; Fibre Channel; ATM; SONET OC-48 / SDH STM-16

Product number: SW11044

Manufacturer:

FCI-H622M-InGaAs-75 InGaAs Photodiode-Amplifier Hybrid

1100 to 1650 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm; Responsivity 16 V/mW; Transimpedance 18 kΩ; Package TO-46 OSI Optoelectronics’ FCI-H622M-InGaAs-75 is a high-speed 75 µm InGaAs photodetector integrated with a wide dynamic range transimpedance amplifier (TIA). Combining the detector with the TIA in a hermetically sealed 4-pin TO-46 package provides ideal conditions for high-speed signal detection and amplification. Low capacitance, low dark current and high responsivity of the detector, along with low noise characteristics of the integrated TIA, give rise to excellent sensitivity. In practice, these devices are ideal for datacom and telecom applications. Cost-effective TO-46 packages come standard with a lensed cap for design simplification, or with a broadband double-sided anti-reflective (AR) coated flat window. The FCI-H622M-InGaAs-75 is also offered with FC, SC, ST and SMA receptacles. Key Features: Low Noise Transimpedance Amplifier High Bandwidth Wide Dynamic Range Single +3.3 V Power Supply Spectral Range 1100 to 1650 nm Differential Output Applications: High-speed Optical Communications; ATM; SONET OC-3 / OC-12; SDH STM-1 / STM-4; Optical Receivers

Product number: SW11045

Manufacturer:

FCI-InGaAs-300B1XX Back-illuminated InGaAs Photodiodes

900 to 1700 nm; Active Area 0.07 mm2; AA Dia. 0.3 mm, Pitch 0.5 mm; Responsivity 0.80 to 0.85 A/W; Capacitance 8 to 10 pF; Package Flip Chip Mountable OSI Optoelectronics’ FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They are available as single element diodes or 4 - or 8- element arrays with an active area of 300 µm each. These back-illuminated InGaAs photodiodes/arrays are designed to be flip chip mounted (active area facing up), or assembled face down minimizing the overall dimensions. These low inductance, low dark current, and low capacitance back illuminated photodiodes/arrays come with or without ceramic substrates. Key Features: Back Illumination High Responsivity on Both Front and Back Low Noise Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Multichannel Fiber Optic Receiver; Power Monitoring; Single Mode (SM) Multi Mode (MM) Fiber Optic Receiver; Fast Ethernet, SONET/SDH OC-3/STM-1 ATM; Instrumentation and Analog Receivers

Product number: SW11027

Manufacturer:

FCI-InGaAs-36C InGaAs Photodiodes

910 to 1650 nm; Active Area 0.001 mm2; AA Dia. 0.036 mm; Responsivity 0.75 to 0.85 A/W; Capacitance 0.16, 0.2 pF; Package Special Chip-size OSI Optoelectronics' FCI-InGaAs-36C is an OC-192 (SONET/SDH) capable photosensitive device, exhibiting low dark current and good performance stability. Both anode and cathode contacts appear on the chip's top facet. FCI-InGaAs-36C is an ideal component in high-speed optical data transport applications at 10 Gbps, responding to a spectral envelope that spans from 910 to 1650 nm. Key Features: High Speed: 10 Gbps Data Rates Low Dark Current Front Illuminated High Responsivity: Typ. 0.8 A/W @ 1550 nm Diameter of Light Sensitive Area: 36 µm Low Capacitance Applications: High Speed Optical Communications; OC-192; Optical Networking; Optical Measurement

Product number: SW11046

Manufacturer:

Customers also viewed

TACHYON Series High-speed Imaging MWIR Cameras

Detector Type VPD PbSe FPA; Spectral Range 1.0-5.0 µm; Pixel Size 50x50, 130x130 µm; 1,024, 16,384 Pixels; Resolution 32x32, 128x128; Max. Frame Rate 1,00-10,000 fps; Interface USB 2.0, GigE VISION 2.0 New Infrared Technologies’ (NIT) TACHYON Series of high-speed imaging MWIR (midwave infrared) cameras provide frame rates of up to 10,000 fps (frames per second) at the full resolution of up to 128×128 pixels – in uncooled operation. While the TACHYON 16k CAMERA features 2,000 fps at full resolution, the TACHYON 16K CAMERA PLUS model allows up to 4,000 fps at full resolution as well as software-configurable ROI windowing modes, hardware NUC correction and selectable data transmission modes. Uncooled and affordable, fast and robust, the compact size TACHYON 16K CAMERA models are optimal for volume requirements and targeted for full integration in Industry 4.0 applications. Both TACHYON 16K CAMERA and CAMERA PLUS models are based on NIT’s TACHYON 16K FPA (Focal Plane Array), sensitive in the 1 µm to 5 µm spectral range. This FPA utilizes VPD PbSe, entirely developed and manufactured by NIT, providing the first quantum infrared technology monolithically compatible with Si-CMOS circuitry. With on-chip A/D readout electronics as well as on-chip dark current cancellation circuit and a digital interface for control and data, the TACHYON 16K FPA features global shutter snapshot readout of 14 Bit raw data and a programmable integration time between 20 µs and 1,000 µs. NIT’s TACHYON 1024 microCAMERA is an uncooled MWIR camera with an IP67-rated enclosure for industrial environments. The camera is powered through a USB 2.0 (high speed) interface with industrial M12 USB connector and capable to reach a frame rate of 1,000 fps. Its miniaturized size, based in a SWaP-C concept, ensures perfect integration into the production process. The TACHYON 1024 microCAMERA is based on NIT’s TACHYON 1024 FPA, an uncooled 32x32 VPD PbSe focal plane array with digital interface and high-speed capabilities up to 10,000 images per second, sensitive in the 1 µm to 5 µm spectral range. With on-chip A/D readout electronics as well as on-chip dark current cancellation circuit and a digital interface for control and data, the TACHYON 1024 FPA features snapshot readout of 10 Bit raw data and a programmable integration time between 100 µs and 1,000 µs. Based on the TYCHYON 1024 FPA, NIT also provides the TACHYON 1024 microCORE uncooled MWIR module with USB connection. The module is USB-powered and capable to reach an acquisition frame rate of 1,000 fps. Optimized size and affordable cost ensure perfect integration in the production process, also in cost-sensitive machine vision applications. For linear array cameras from New Infrared Technologies, please refer to the LUXELL series of linear array MWIR cameras. And for applications requiring single-pixel MWIR detection, have a look at NIT’s LEPTON series of single-pixel VPD PbS MWIR detectors. Key Features: Detector Type: VPD PbSe FPA With Digital Interface Uncooled Operation Array Format: 128x128 (16,384 Pixels), 32x32 (1,024 Pixels) Pixel Size: 50 µm x 50 µm, 130 µm x 130 µm ROI Windowing Function (64x64, 32x32, 1x128) for TACHYON 16K CAMERA Models; Window Position & Dimensions SW-configurable (PLUS Model) Maximum Frame Rate: 1,000 fps to 10,000 fps Spectral Range: MWIR, 1.0 µm to 5.0 µm Peak Wavelength of Detection: 3.7 µm Integration Time: 10 µs to 1,000 µs, Selectable Data Transmission Modes: Raw Data 10 Bit, 14 Bit; NUC Corrected 16 Bit and High-speed RAW/NUC 12 Bit (TACHYON 16K CAMERA PLUS) Minimum Temperature of Detection: +100 °C Interfaces: USB 2.0 High-speed (480 Mbps); GigE VISION 2.0 With PoE, Multi-purpose DI/DO Connector (Trigger In/out) for TACHYON 16K CAMERA PLUS Mechanical Shutter for 1-pt Offset Correction Start-up Time: <10 s (TACHYON 16K CAMERA Models) Power Supply: PoE, 8 W (TACHYON 16K CAMERA Models), 5 VDC Through USB Connection Metal Housing With Rear Connectors and M3 & M4 Tripod Screw Holes (TACHYON 16K CAMERA Models) Dimensions TACHYON 16K CAMERA Models: 66 x 62 x 62 mm Weight TACHYON 16K CAMERA Models: 400 g Optics TACHYON 16K CAMERA Models (Standard Option): f = 35 mm, F# 1.1, FoV 10.5° x 10.5 °, AR Coating, Manual Focus, CS-Mount Dimensions TACHYON 1024 microCAMERA: 98.0 x 49.5 x 61.0 mm Weight TACHYON 1024 microCAMERA: 250 g Optics TACHYON 1024 microCAMERA: f = 24 mm, F#1.2, FoV 10.25° x 10.25° (Standard), f = 48 mm, F#1.6, FoV 5.1° x 5.1° (Additional Lens Option) Software Included: NIT Software Suite, SDK Available for Custom Software Programming Dimensions TACHYON 1024 microCORE Module: 43 x 36 x 17 mm Biasing Voltage TACHYON 1024 microCORE Module: 1.00 V to 2.00 V, Selectable Metal Housing (46.5 x 39.5 x 29.5 mm) With CS-mount Optics Interface Available for TACHYON 1024 microCORE Module Applications: Machine Vision; Additive Manufacturing Monitoring; Industrial Automation; Laser Process Monitoring; Industrial Process Monitoring & Control (welding, Cutting, etc.); Gas Detection; Spectroscopy; Fire Detection; Glass Manufacturing Quality Assurance; Research & Development; OEM Integration

Product number: SW11623

Manufacturer: