VTT9812FH / VTT9814FH IR-blocking Silicon Phototransistors

Active Area Diameter 0.8-3 mm; Responsivity 25-36 A/W; Capacitance 2-10 pF; NEP 14-20 fW/√Hz; Dark Current 50, 100 nA; Package TO-5, TO-8 Excelitas’ 1064 nm long-wavelength enhanced Silicon Avalanche Photodiodes (APDs) C30954EH, C30955EH and C30956EH are made using a double-diffused “reach-through” structure. The design of these photodiodes is such that their long-wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties. The C30954EH, C30955EH and C30956EH long-wavelength enhanced APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low-noise, low-capacitance, and fast rise and fall times characteristics. To help simplify many design needs, these APDs are also available in Excelitas’ high-performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. In addition, these APDs are also available with built-in thermo-electric cooler for easier temperature control. The C30954EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 0.8 mm active area diameter in a TO-5 package. The C30955EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 1.5 mm active area diameter in a TO-5 package. The C30956EH large-area, long-wavelength enhanced silicon avalanche Photodiode (Si APD) provides a 3 mm active area diameter in a TO-8 package. Key Features: Active Area Diameter: 0.8, 1.5, 3 mm High Quantum Efficiency at 1060 nm: ≤40% Enhanced Long-wave Response: >900 nm Fast Response Time: 2 ns Wide Operating Temperature Range Low Capacitance @100 kHz: 2 to 10 pF Responsivity @1060 nm: 25 to 36 A/W Dark Current: 50, 100 nA Spectral Noise Current: 0.5 pA/√Hz NEP @1060 nm: 14 to 20 fW/√Hz Vop Range: 275 to 425 V Hermetically Sealed Packages: TO-5, TO-8 RoHS Compliant TEC Option Available Customization Available Upon Request Applications: Range Finding; LiDAR (Light Detection and Ranging); YAG Laser Detection

4x4 Array Detector; 810, 850 nm Band Optimized; Active Area 1,0, 1.96 mm2; Responsivity 0.35 to 0.4 A/W; Capacitance 35, 75 pF; Package Ceramic LCC OSI Optoelectronics’ 4X4D series comprise 4 by 4 arrays of super blue enhanced photodetectors. Two models are available: PIN-4X4D silicon array detectors feature an active area of 1.96 mm2 and a peak responsivity wavelength of 850 nm, while UDT-4X4D silicon array detectors with an active area of 1.0 mm2 show peak responsivity at 810 nm. OSI Optoelectronics’ proprietary design provides virtually complete isolation between all of the 16 elements. The standard LCC package allows easy integration into your surface mount applications. Numerous applications include ratio and scattering measurements, as well as Position Sensing. For custom packages, special electro-optic requirements, or to order these parts in die form, please contact AMS Technologies. Key Features: 4x4 Array Detector Active Area: 1.0x1.0 mm (UDT-4X4D), 1.4x1.4 mm (PIN-4X4D) Peak Responsivity Wavelength: 810 (UDT-4X4D), 850 nm (PIN-4X4D) Very Fast Response Extremely Low Cross-talk Surface Mount Design Package: Ceramic LCC Applications: Ratio and Scattering Measurements; Position Sensing

540, 930 nm Band Optimized; 16 Elements; Active Area 2.35 mm2 per Element; AA Dimensions 2.00 x 1.18 mm per Element, Pitch 1.57 mm; Rise Time 0.1 µs; Responsivity 0.31, 0.59 A/W; Capacitance 28 pF; Package Special PCB OSI Optoelectronics' A2C-16-1.57 multi-channel X-ray detector consists 16 individual elements grouped together in an array and mounted on PCB. For X-ray or gamma-ray application, these multi-channel detectors offer scintillator-mounting options: BGO, CdWO4 or CsI(TI). BGO (Bismuth Germanate) acts as an ideal absorber: it is widely accepted in high-energy detection applications. CdWO4 (Cadmium Tungstate) exhibits sufficiently high light output, helping improve spectrometry results. CsI (Cesium Iodide) is another high energy absorber, providing adequate resistance against mechanical shock and thermal stress. When coupled to scintillators, these silicon arrays map any medium or high radiation energy over to visible spectrum via scattering effect. Also, their specially designed PCB allows end-to-end connectivity. Multiple arrays can be deployed in situations that call for larger scale assembly. Key Features: Scintillator Platform 5 V Bias Channel Spacing Variety Applications: Position Sensors; Multi-channel Gamma Counting; X-ray Security Systems

Active Area 0.191-37.7 mm²; Radiometric Sensitivity 0.034-7 A/W; Capacitance 0.15-11 nF; Spectral Range 330-720 nm; Typ. Peak Wavelength 555, 580, 585 nm; NEP 11, 13, 53 fW/√Hz; Max. Dark Current 0.02-50 nA; Package TO-8, TO-46, T-1¾ Flat Excelitas offers ambient light sensors that provide an easy solution for applications requiring a response similar to the human eye, making them ideal when the response should only be influenced by visible light. Within this product family, we offer two types of Excelitas devices: IR-filtered silicon photodiodes and IR-filtered silicon phototransistors. These devices contribute in various applications to energy conservation in both fixed and portable devices. They are available in a number of standard packages, including surface mount for automated assembly. Applications: Interior and Exterior Light Switching (Dusk/Dawn Switch); Interior and Exterior Light Control (Dimming); Automotive Headlight Dimmer; Display Contrast Control; Energy Conservation

800 nm Band Optimized; Active Area 0.03 to 19.6 mm2; AA Dia. 0.2 to 5.0 mm; Responsivity 20 to 50 A/W; Capacitance 1.5 to 105 pF; Package TO-5, TO-8, TO-52 OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications. Optimized for the 800 nm wavelength band, the APD series is available with five different active area sizes ranging from 0.2 to 5.0 mm in diameter. Depending on active area size, the devices are supplied in TO-5, TO-8 or TO-52 packages. Key Features: High Speed Responsivity / QE High Bandwidth / Fast Response Low Noise Low Bias Voltage Hermetically Sealed TO-Packages Applications: High Speed Optical Communications; Laser Range Finders; Bar Code Readers; Optical Remote Control; Medical Equipment; High Speed Photometry

800 nm Band Optimized; Active Area 0.003 to 1.77 mm2; AA Dia. 0.2 to 1.5 mm; Responsivity 50 A/W; Capacitance 1.5 to 10 pF; Package TO-5, TO-52 OSI Optoelectronics introduces its APDXX-8-150 “800 nm optimized” silicon avalanche photodiode (APD) series, available in hermetic metal packages. Devices offer lower noise and high sensitivity over bandwidths up to 1 GHz. APDXX-8-150 devices exhibit a low temperature coefficient of 0.45 V/˚C. OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. The APDXX-8-150 series is available with different active area sizes ranging from 0.2 to 1.5 mm in diameter as well as with flat windows or ball lenses for optical fiber applications. Depending on active area size, the devices are supplied in TO-5, or TO-52 packages. Key Features: Active Area Diameters: 0.2, 0.5, 1.0, 1.5 mm Low Temperature Coefficient: 0.45 V/°C High Sensitivity Low Noise High Bandwidth Applications: Optical Fiber Communication; Laser Range Finder; High-speed Photometry

C30927 Series: Number of Elements 4; Photo Sensitive Diameter 1.5 mm; Responsivity 15-62 A/W; Capacitance 1 pF; NEP 9-16 fW/√Hz; Spectral Noise Current per Element 0.5 pA/√Hz Excelitas’ C30927 family of avalanche photodiode (APD) arrays and quadrants utilize the double-diffused “reach-through“ structure. This structure provides ultra-high sensitivity at 400 nm to 1000 nm. The C30927 quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight. The C30927EH-01, -02 and -03 APD arrays and quadrants are optimized for use at wavelengths of 1060, 900, and 800 nm respectively. Each device type will provide high responsivity and excellent performance when operated within about 50 nm of the specified wavelength. The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach-through” structure. The standard versions of the Excelitas C30737 silicon APD array series are available with 16 or 64 elements and provide high responsivity between 500 nm and 1000nm. The standard versions are available either in a compact surface-mount “top-looking” leadless package (C30737MA) or in a BGA type “top-looking” package (C30737GA). Both packages are ideally suited for high volume, cost-effective applications where a high gain APD is required. The leadless SMD and BGA packaged parts are RoHS-compliant and suitable for reflow soldering. The C30737MH series of LLC SMD packaged EPI APDs has the smallest footprint SMD packages. The C30737GA-02-64-90 silicon avalanche photodiode array (Si APD array) provides high responsivity between 500 nm and 1000 nm and is available in a BGA-type “top-looking” package. The C30737GA is ideally suited for high volume, cost-effective applications where a high gain APD is required. Its leadless BGA package is RoHS-compliant and suitable for reflow soldering. Key Features C30927 Series: High Quantum Efficiency Hermetically Sealed Packages Monolithic Chip With Minimal Dead Space Between Elements Specific Tailored Wavelength Response RoHS Compliant Customization Available Upon Request Applications C30927 Series: Spectroscopy; Particle Detection; Spot Tracking and Alignment Systems; Adaptive Optics; LiDAR (Light Detection and Ranging)