High-performance Silicon Avalanche Photodiodes APD

Product number: SW11514

Manufacturer: Excelitas Technologies

Downloads

High-performance Silicon Avalanche Photodiodes APD Excelitas Datasheet

Product information "High-performance Silicon Avalanche Photodiodes APD"

Active Area Diameter 0.5 to 1.5 mm; Responsivity 8 to 128 A/W; Capacitance 1.6 to 4 pF; Package TO-5, TO-8 Flange, TO-18

Exelitas‘ series of high-performance, rear-entry, “reach-through” silicon avalanche photodiodes (APDs) offer the best compromise in terms of cost and performance for applications requiring high-speed and low-noise photon detection from 400 nm up to 1100 nm.

These Silicon APDs feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. The active area varies from 0.5 mm to 1.5 mm.

C30817EH: This silicon avalanche photodiode for general-purpose applications is designed using a double-diffused “reach through” structure. This structure provides high responsivity between 400 to 1100 nm, as well as fast rise and fall times at all wavelengths. Since the fall time characteristics has no “tail”, the responsivity of the device is independent of modulation frequency up to about 200 MHz.

C30884EH: This silicon avalanche photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz. This Si APD is made using a double-diffused “reach-through” structure and is optimized for high responsivity at wavelengths of below 1000 nm.

C30902BH: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active area diameter. Suitable for biomedical and analytical applications, this Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths.

C30902EH: This high-performance silicon avalanche photodiode (APD) has an active area diameter of 0.5 mm and is suitable for biomedical and analytical applications. This Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths.

C30902EH-2: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active diameter and a 905 nm bandpass filter in a TO-18 housing. This Si APD is suitable for biomedical and analytical applications.

C30902SH: Selected high-performance silicon avalanche photodiodes with extremely low noise and bulk dark current. Suitable for biomedical and analytical applications, this Si APD provides 0.5 mm active diameter in TO-18 housing.

C30902SH-2: High-performance, low-noise, selected silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in a TO-18 housing with an inline 905 nm bandpass filter.

C30902SH-TC: High-performance, low-noise, selected, single-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing.

C30902SH-DTC: High-performance, low-noise, selected, double-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing.

C30916EH: Large-area silicon avalanche photodiode with 1.5 mm active area diameter in TO-5 housing.

Part Number	Active Diameter	Capacitance	Rise/Fall Time	Dark Current	Breakdown Voltage min	Breakdown Voltage max	Temperature Coefficient	Typical Gain	Responsivity			NEP	Package
									830 nm	900 nm	1060 nm
Unit	mm	pF	ns	nA	V	V	V/°C		A/W	A/W	A/W	fW/√Hz
C30817EH	0.8	2	2	50	300	475	2.2	120	-	75	-	13	TO-5
C30884E	0.8	4	1	100	190	290	1.1	100	-	63	8	13	TO-5
C30902BH	0.5	1.6	0.5	15	185	265	0.7	150	77	60	-	3	Ball lens TO-18
C30902EH	0.5	1.6	0.5	15	185	265	0.7	150	77	60	-	3	TO-18, flat window
C30902EH-2	0.5	1.6	0.5	15	185	265	0.7	150	77	60	-	3	TO-18, built-in 905 nm filter
C30902SH	0.5	1.6	0.5	15	185	265	0.7	250	128	108	-	0.9	TO-18, flat window
C30902SH-2	0.5	1.6	0.5	15	185	265	0.7	250	128	108	-	0.9	TO-18, built-in 905 nm filter
C30902SH-TC	0.5	1.6	0.5	2	225	-	0.7	250	128	108	-	0.04 pA/√Hz	TO-8 flange
C30902SH-DTC	0.5	1.6	0.5	1	225	-	0.7	250	128	108	-	0.02 pA/√Hz	TO-8 flange
C30916EH	1.5	3	3	100	315	490	2.2	80	-	50	12	20	TO-5

Applications: LIDAR; Laser Detection; Range Finding; Small-signal Fluorescence; Photon Counting; Bar Code Scanning; Optical Communications; High-speed Switching Systems; Transit-time Measurements; Biomedical and Analytical Applications; Confocal Microscopes; Spectrophotometers; Luminometers; DNA Sequencers, Particle Sizing

Manufacturer "Excelitas Technologies"

Similar products

1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD

Active Area Diameter 0.8-3 mm; Responsivity 25-36 A/W; Capacitance 2-10 pF; NEP 14-20 fW/√Hz; Dark Current 50, 100 nA; Package TO-5, TO-8 Excelitas’ 1064 nm long-wavelength enhanced Silicon Avalanche Photodiodes (APDs) C30954EH, C30955EH and C30956EH are made using a double-diffused “reach-through” structure. The design of these photodiodes is such that their long-wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties. The C30954EH, C30955EH and C30956EH long-wavelength enhanced APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low-noise, low-capacitance, and fast rise and fall times characteristics. To help simplify many design needs, these APDs are also available in Excelitas’ high-performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. In addition, these APDs are also available with built-in thermo-electric cooler for easier temperature control. The C30954EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 0.8 mm active area diameter in a TO-5 package. The C30955EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 1.5 mm active area diameter in a TO-5 package. The C30956EH large-area, long-wavelength enhanced silicon avalanche Photodiode (Si APD) provides a 3 mm active area diameter in a TO-8 package. Key Features: Active Area Diameter: 0.8, 1.5, 3 mm High Quantum Efficiency at 1060 nm: ≤40% Enhanced Long-wave Response: >900 nm Fast Response Time: 2 ns Wide Operating Temperature Range Low Capacitance @100 kHz: 2 to 10 pF Responsivity @1060 nm: 25 to 36 A/W Dark Current: 50, 100 nA Spectral Noise Current: 0.5 pA/√Hz NEP @1060 nm: 14 to 20 fW/√Hz Vop Range: 275 to 425 V Hermetically Sealed Packages: TO-5, TO-8 RoHS Compliant TEC Option Available Customization Available Upon Request Applications: Range Finding; LiDAR (Light Detection and Ranging); YAG Laser Detection

Product number: SW11551

Manufacturer:

4X4D Two-dimensional Silicon Array Detectors

4x4 Array Detector; 810, 850 nm Band Optimized; Active Area 1,0, 1.96 mm2; Responsivity 0.35 to 0.4 A/W; Capacitance 35, 75 pF; Package Ceramic LCC OSI Optoelectronics’ 4X4D series comprise 4 by 4 arrays of super blue enhanced photodetectors. Two models are available: PIN-4X4D silicon array detectors feature an active area of 1.96 mm2 and a peak responsivity wavelength of 850 nm, while UDT-4X4D silicon array detectors with an active area of 1.0 mm2 show peak responsivity at 810 nm. OSI Optoelectronics’ proprietary design provides virtually complete isolation between all of the 16 elements. The standard LCC package allows easy integration into your surface mount applications. Numerous applications include ratio and scattering measurements, as well as Position Sensing. For custom packages, special electro-optic requirements, or to order these parts in die form, please contact AMS Technologies. Key Features: 4x4 Array Detector Active Area: 1.0x1.0 mm (UDT-4X4D), 1.4x1.4 mm (PIN-4X4D) Peak Responsivity Wavelength: 810 (UDT-4X4D), 850 nm (PIN-4X4D) Very Fast Response Extremely Low Cross-talk Surface Mount Design Package: Ceramic LCC Applications: Ratio and Scattering Measurements; Position Sensing

Product number: SW11021

Manufacturer:

A2C-16-1.57 Multi-channel X-Ray Detector

540, 930 nm Band Optimized; 16 Elements; Active Area 2.35 mm2 per Element; AA Dimensions 2.00 x 1.18 mm per Element, Pitch 1.57 mm; Rise Time 0.1 µs; Responsivity 0.31, 0.59 A/W; Capacitance 28 pF; Package Special PCB OSI Optoelectronics' A2C-16-1.57 multi-channel X-ray detector consists 16 individual elements grouped together in an array and mounted on PCB. For X-ray or gamma-ray application, these multi-channel detectors offer scintillator-mounting options: BGO, CdWO4 or CsI(TI). BGO (Bismuth Germanate) acts as an ideal absorber: it is widely accepted in high-energy detection applications. CdWO4 (Cadmium Tungstate) exhibits sufficiently high light output, helping improve spectrometry results. CsI (Cesium Iodide) is another high energy absorber, providing adequate resistance against mechanical shock and thermal stress. When coupled to scintillators, these silicon arrays map any medium or high radiation energy over to visible spectrum via scattering effect. Also, their specially designed PCB allows end-to-end connectivity. Multiple arrays can be deployed in situations that call for larger scale assembly. Key Features: Scintillator Platform 5 V Bias Channel Spacing Variety Applications: Position Sensors; Multi-channel Gamma Counting; X-ray Security Systems

Product number: SW11074

Manufacturer:

Ambient Light Sensors

Active Area 0.191-37.7 mm²; Radiometric Sensitivity 0.034-7 A/W; Capacitance 0.15-11 nF; Spectral Range 330-720 nm; Typ. Peak Wavelength 555, 580, 585 nm; NEP 11, 13, 53 fW/√Hz; Max. Dark Current 0.02-50 nA; Package TO-8, TO-46, T-1¾ Flat Excelitas offers ambient light sensors that provide an easy solution for applications requiring a response similar to the human eye, making them ideal when the response should only be influenced by visible light. Within this product family, we offer two types of Excelitas devices: IR-filtered silicon photodiodes and IR-filtered silicon phototransistors. These devices contribute in various applications to energy conservation in both fixed and portable devices. They are available in a number of standard packages, including surface mount for automated assembly. Applications: Interior and Exterior Light Switching (Dusk/Dawn Switch); Interior and Exterior Light Control (Dimming); Automotive Headlight Dimmer; Display Contrast Control; Energy Conservation

Product number: SW11560

Manufacturer:

APD Silicon Avalanche Photodiodes

800 nm Band Optimized; Active Area 0.03 to 19.6 mm2; AA Dia. 0.2 to 5.0 mm; Responsivity 20 to 50 A/W; Capacitance 1.5 to 105 pF; Package TO-5, TO-8, TO-52 OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications. Optimized for the 800 nm wavelength band, the APD series is available with five different active area sizes ranging from 0.2 to 5.0 mm in diameter. Depending on active area size, the devices are supplied in TO-5, TO-8 or TO-52 packages. Key Features: High Speed Responsivity / QE High Bandwidth / Fast Response Low Noise Low Bias Voltage Hermetically Sealed TO-Packages Applications: High Speed Optical Communications; Laser Range Finders; Bar Code Readers; Optical Remote Control; Medical Equipment; High Speed Photometry

Product number: SW11018

Manufacturer:

APDXX-8-150 Silicon Avalanche Photodiodes

800 nm Band Optimized; Active Area 0.003 to 1.77 mm2; AA Dia. 0.2 to 1.5 mm; Responsivity 50 A/W; Capacitance 1.5 to 10 pF; Package TO-5, TO-52 OSI Optoelectronics introduces its APDXX-8-150 “800 nm optimized” silicon avalanche photodiode (APD) series, available in hermetic metal packages. Devices offer lower noise and high sensitivity over bandwidths up to 1 GHz. APDXX-8-150 devices exhibit a low temperature coefficient of 0.45 V/˚C. OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. The APDXX-8-150 series is available with different active area sizes ranging from 0.2 to 1.5 mm in diameter as well as with flat windows or ball lenses for optical fiber applications. Depending on active area size, the devices are supplied in TO-5, or TO-52 packages. Key Features: Active Area Diameters: 0.2, 0.5, 1.0, 1.5 mm Low Temperature Coefficient: 0.45 V/°C High Sensitivity Low Noise High Bandwidth Applications: Optical Fiber Communication; Laser Range Finder; High-speed Photometry

Product number: SW11047

Manufacturer:

Avalanche Photodiode APD Arrays & Quadrants

C30927 Series: Number of Elements 4; Photo Sensitive Diameter 1.5 mm; Responsivity 15-62 A/W; Capacitance 1 pF; NEP 9-16 fW/√Hz; Spectral Noise Current per Element 0.5 pA/√Hz Excelitas’ C30927 family of avalanche photodiode (APD) arrays and quadrants utilize the double-diffused “reach-through“ structure. This structure provides ultra-high sensitivity at 400 nm to 1000 nm. The C30927 quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight. The C30927EH-01, -02 and -03 APD arrays and quadrants are optimized for use at wavelengths of 1060, 900, and 800 nm respectively. Each device type will provide high responsivity and excellent performance when operated within about 50 nm of the specified wavelength. The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach-through” structure. The standard versions of the Excelitas C30737 silicon APD array series are available with 16 or 64 elements and provide high responsivity between 500 nm and 1000nm. The standard versions are available either in a compact surface-mount “top-looking” leadless package (C30737MA) or in a BGA type “top-looking” package (C30737GA). Both packages are ideally suited for high volume, cost-effective applications where a high gain APD is required. The leadless SMD and BGA packaged parts are RoHS-compliant and suitable for reflow soldering. The C30737MH series of LLC SMD packaged EPI APDs has the smallest footprint SMD packages. The C30737GA-02-64-90 silicon avalanche photodiode array (Si APD array) provides high responsivity between 500 nm and 1000 nm and is available in a BGA-type “top-looking” package. The C30737GA is ideally suited for high volume, cost-effective applications where a high gain APD is required. Its leadless BGA package is RoHS-compliant and suitable for reflow soldering. Key Features C30927 Series: High Quantum Efficiency Hermetically Sealed Packages Monolithic Chip With Minimal Dead Space Between Elements Specific Tailored Wavelength Response RoHS Compliant Customization Available Upon Request Applications C30927 Series: Spectroscopy; Particle Detection; Spot Tracking and Alignment Systems; Adaptive Optics; LiDAR (Light Detection and Ranging)

Product number: SW11549

Manufacturer: