Hertzstück™ PbS/PbSe NIR Detector Evaluation Kits

Wavelength Range 1-3 µm; Time Constant 200 µs Typ.; No. of Pixels 1-512; No. of Lines 1; Min. Pixel Width/Height 20 µm; Dark Resistance 3-30 MΩ; Peak Wavelength 2.7 µm Hertzstück™ PbS lead salt near-infrared (NIR) line array detectors by trinamiX are available as bare chips or encapsulated modules, with up to 512 pixels and a pitch starting from 50 µm. Further customization is possible. The detectors cover a wide spectral range (wavelength 1 µm to 3 µm), which is highly relevant for applications in inline or mobile process analytics, quality control and gas sensing. For PbS NIR detectors as single-pixel, multi-single-pixel and multi-pixel versions, please refer to the Hertzstück™ PbS Bare Chip & TO-Package NIR Detectors series. Due to their unique thin-film encapsulation for longer lifetime and highest detectivity at room temperature, Hertzstück™ PbS bare chip line array NIR detectors can be directly wire-bonded to printed circuit boards. The Hertzstück™ PbS module line array NIR detectors comprise a 256-pixel PbS array and a corresponding read-out electronics in a hermetic PS28 package. These devices provide frame rates up to 1 kHz and feature thermo electric (TEC) temperature stabilization as well as an analog multiplex output. Optimum transmittance in the accepted wavelength range is ensured by an AR-coated sapphire window. Thanks to their low power consumption, Hertzstück™ PbS array modules are the ideal solution for mobile applications such as handheld spectrometers. Three different evaluation kits enable users to easily compare different varieties of the Hertzstück™ PbS NIR detectors and to quickly develop circuit designs for their applications. Key Features: High Stability and Long Lifetime Through Thin-film Encapsulation PbS Detector for Wavelengths From 1 to 3 µm Peak Detectivity at Room Temperature (620 Hz, 1 Hz): 1 x 1011 cm·Hz½/W Typical Readily Available in Large Scale Very High Sensitivity Suitable for Automated Wire-bonding (Bare Chip Version) Double Encapsulation: Thin-film and PS28 Housing With Sapphire Window (Module Version) 1-Stage Thermoelectric Cooler (TEC) Included (Module Version) Minimum Pixel Width/Height: 20 µm Minimum Pixel Pitch: 50 µm Minimum Chip Length/Height: 3 mm Number of Pixels: 1-512 Peak Wavelength: 2.7 µm Typical 20% Cut-off Wavelength: 2.9 µm Typical Time Constant: 200 µs Typical Dark Resistance: 3-30 MΩ Applications: NIR Spectroscopy; Fire & Spark Detection; Flame Monitoring; Moisture Monitoring

Wavelength Range 1-3 µm; Active Area per Pixel 0.5x0.5-10x10 mm; Time Constant 200 µs Typ.; No. of Pixels 1-16; No. of Lines 1-4; Min. Pixel Width/Height 20, 1,000 µm; Dark Resistance 0.3-15 MΩ; Peak Wavelength 2.7 µm Hertzstück™ PbS lead salt near-infrared (NIR) detectors by trinamiX are available as single-pixel, multi-single-pixel and multi-pixel versions. For PbS NIR detector line arrays, please refer to the Hertzstück™ PbS Bare Chip & Module Line Array NIR Detectors series. The detectors cover a wide spectral range, which is highly relevant for applications in inline or mobile process analytics, quality control and gas sensing. The bare chips of trinamiX’ Hertzstück™ series PbS lead salt near-infrared (NIR) detectors and detector arrays are protected by a unique thin-film encapsulation for longer lifetime and highest detectivity at room temperature. Bare-chip solutions enable small, flexible and very efficient devices and can be directly wire-bonded to printed circuit boards. Single- and multi-single-pixel versions are also available on small, pre-bonded, solderable adapter PCBs, allowing customers without wire-bonding expertise or capabilities to benefit from the detectors’ patented thin-film encapsulation, pick and place compatibility, small footprint and large field of view. Direct access to the thin-film encapsulated sensor surface without lossy entrance windows is crucial for compact solutions, applications with low signal levels, or optimal coupling with optical fibers. The adapter PCBs come in various sizes starting at 5 x 6 mm and a module height of 1 mm. Four castellated holes on the outer PCB edges serve as solder pads and make it possible to mount these detector modules directly onto any system PCB. Beyond bare chip versions, the Hertzstück™ PbS series single-pixel NIR detectors are also available housed in TO-packages with double encapsulation – not only protected by a standard TO package, but also by the thin-film encapsulation directly on the chip. TO-packaged PbS single-pixel NIR detectors are as well offered with an integrated thermoelectric cooler (TEC). All TEC-based trinamiX detectors incorporate a thermistor which allows for a precise temperature stabilization of the active element. The single- and two-stage TECs provide for operation at extremely low temperatures for increased detectivity and sensitivity at larger wavelengths independent of the ambient conditions. Hertzstück™ PbS multi-single-pixel bare chip NIR detectors consist of 2 to 16 single pixels in line or matrix design, wire-bonded on PCB. The usage of single pixel detectors enables high flexibility regarding setup and filters. Hertzstück™ PbS multi-pixel bare chip NIR detectors consist of 2 to 16 pixels in line or matrix design, realized directly on the substrate. This technology provides high durability for rugged operation as well as bondable electrodes for COB mounting and is suitable for automated wire-bonding. Three different evaluation kits enable users to easily compare different varieties of the Hertzstück™ PbS NIR detectors and to quickly develop circuit designs for their applications. Key Features: Single Pixel, Multi-Single-Pixel and Multi-Pixel Versions available Small Footprint, High Stability and Long Lifetime Through New Thin-film Encapsulation Double Encapsulation & Sapphire Window (TO-Package Versions) Minimum Pixel Width/Height: 0.5 mm (Single-pixel), 1 mm (Multi-single-pixel), 20 µm (Multi-pixel) Multi-pixel Minimum Chip Length/Height: 3 mm Active Area per Pixel: 0.5 x 0.5 mm to 10 x 10 mm Number of Pixels: 2-8 (Multi-single-pixel), 2-16 (Multi-pixel) Number of Lines: 1-3 (Multi-single-pixel), 1-4 (Multi-pixel) Bondable Contacts or Solder Pads for PCB Mounting Compatible With Industry-standard Production Methods Wavelength Range: 1-3 µm Peak Wavelength: 2.7 µm 20% Cut-off Wavelength λC: 2.9 µm Dark Resistance: 0.3-15 MΩ Room Temperature Operation Very High Sensitivity Peak Detectivity at Room Temperature (620 Hz, 1 Hz): 1 x 1011 cm·Hz½/W Typical Peak Responsivity (Single- & Multi-single-pixel): 0.6x105 to 16x105 V/W Typical Time Constant: 200 µs Typical Extensive Quality Control Applications: Gas Sensing; Gas Detection & Analysis; Moisture Monitoring; Flame & Spark Detection; Flame Monitoring; NIR Spectroscopy; Temperature Measurement; Rapid Prototyping

Wavelength Range 1-5 µm; Active Area per Pixel 1x1-6x6 mm; Time Constant 4 µs Typ.; No. of Pixels 1-16; No. of Lines 1-4; Min. Pixel Width/Height 20, 1,000 µm; Dark Resistance 0.1-20 MΩ; Peak Wavelength 3.8 µm Hertzstück™ PbSe lead salt near-infrared (NIR) detectors by trinamiX are available as single-pixel, multi-single-pixel and multi-pixel versions. These PbSe detectors cover a wide NIR spectral range, which is highly relevant for applications in inline or mobile process analytics, quality control and gas sensing. The bare chips of trinamiX’ Hertzstück™ series PbSe lead salt near-infrared (NIR) detectors and detector arrays are protected by a unique thin-film encapsulation for longer lifetime and highest detectivity at room temperature. Bare-chip solutions enable small, flexible and very efficient devices and can be directly wire-bonded to printed circuit boards. Single- and multi-single-pixel versions are also available on small, pre-bonded, solderable adapter PCBs, allowing customers without wire-bonding expertise or capabilities to benefit from the detectors’ patented thin-film encapsulation, pick and place compatibility, small footprint and large field of view. Direct access to the thin-film encapsulated sensor surface without lossy entrance windows is crucial for compact solutions, applications with low signal levels, or optimal coupling with optical fibers. The adapter PCBs come in various sizes starting at 5 x 6 mm and a module height of 1 mm. Four castellated holes on the outer PCB edges serve as solder pads and make it possible to mount these detector modules directly onto any system PCB. Beyond bare chip versions, the Hertzstück™ PbSe series single-pixel NIR detectors are also available housed in TO-packages with double encapsulation – not only protected by a standard TO package, but also by the thin-film encapsulation directly on the chip. TO-packaged PbSe single-pixel NIR detectors are as well offered with an integrated thermoelectric cooler (TEC). All TEC-based trinamiX detectors incorporate a thermistor which allows for a precise temperature stabilization of the active element. The single- and two-stage TECs provide for operation at extremely low temperatures for increased detectivity and sensitivity at larger wavelengths independent of the ambient conditions. Hertzstück™ PbSe multi-single-pixel bare chip NIR detectors consist of 2 to 16 single pixels in line or matrix design, wire-bonded on PCB. The usage of single pixel detectors enables high flexibility regarding setup and filters. Hertzstück™ PbSe multi-pixel bare chip NIR detectors consist of 2 to 16 pixels in line or matrix design, realized directly on the substrate. This technology provides high durability for rugged operation as well as bondable electrodes for COB mounting and is suitable for automated wire-bonding. Three different evaluation kits enable users to easily compare different varieties of the Hertzstück™ PbSe NIR detectors and to quickly develop circuit designs for their applications. Key Features: Single Pixel, Multi-Single-Pixel and Multi-Pixel Versions available Small Footprint, High Stability and Long Lifetime Through New Thin-film Encapsulation Double Encapsulation & Sapphire Window (TO-Package Versions) Minimum Pixel Width/Height: 1 mm (Single- & Multi-single-pixel), 20 µm (Multi-pixel) Multi-pixel Minimum Chip Length/Height: 3 mm Active Area per Pixel: 1 x 1 mm to 6 x 6 mm Number of Pixels: 2-8 (Multi-single-pixel), 2-16 (Multi-pixel) Number of Lines: 1-3 (Multi-single-pixel), 1-4 (Multi-pixel) Bondable Contacts or Solder Pads for PCB Mounting Compatible With Industry-standard Production Methods Wavelength Range: 1-5 µm Peak Wavelength: 3.8 µm 20% Cut-off Wavelength λC: 4.5 µm Dark Resistance: 0.1-20 MΩ Room Temperature Operation Peak Detectivity at Room Temperature (620 Hz, 1 Hz): 1.8 x 1010 cm·Hz½/W Typical Peak Responsivity (Single- & Multi-single-pixel): 8x103 to 4.5x104 V/W Typical Time Constant: 4 µs Typical Extensive Quality Control Applications: Gas Sensing; Gas Detection & Analysis; Moisture Monitoring; Flame & Spark Detection; Flame Monitoring; NIR Spectroscopy; Temperature Measurement; Rapid Prototyping

Wavelength Range 1.0-5.0 µm MWIR; Detector Size 1x1, 2x2 mm; Time Constant <2 µs; Responsivity 9x103, 4.5x103 V/W; Element Resistance 0.1-2.0 MΩ New Infrared Technologies’ (NIT) LEPTON Series of single-pixel VPD PbSe MWIR detectors are available uncooled as well as with integrated TECs (thermoelectric cooling elements), with different geometries, packaging solutions and preamplifier boards. LEPTON Series single-pixel detectors come in two standard sizes: 1 mm × 1 mm or 2 mm × 2 mm. LEPTON Series uncooled single-pixel PbSe MWIR detectors can be ordered packaged in SMD or TO-5 housings (with cap, hermetic) with sapphire window. These detectors are operational at room temperature and don’t require any cooling devices. LEPTON Series cooled single-pixel PbSe MWIR detectors are hermetically packaged in a TO-8 can housing with cap and sapphire window and include one or two thermoelectric cooler (TEC) stages for higher sensitivity as well as a thermistor. A calibration curve for the thermistor is available. NIT’s LEPTON Series also includes two low-noise preamplifier boards that are 5-V-powered via mini-USB connector: The LEPTON ANALOG PREAMP provides rotary switches to manually select the detector biasing voltage (4 steps from 1.25 V to 10 V) as well as the transimpedance gain (4 steps from 104 to 107 V/A). This preamp outputs a ±10 V analog voltage on a BNC connector. The LEPTON PREAMP WITH USB OUTPUT allows to digitally select the values for detector biasing voltage and transimpedance gain via software. Here, the output is a digital 14 Bit signal with a maximum sampling rate of 20 ksps. This preamp also features an analog output for the preamplifier stage on SMB or BNC connector. For more pixels, linear and two-dimensional array MWIR cameras are available from New Infrared Technologies – please refer to the LUXELL series of linear array MWIR cameras and TACHYON series of high-speed imaging MWIR cameras respectively. Key Features: Detector Sensing Material: VPD Polycrystalline PbSe Uncooled and TEC-cooled (1-stage, 2-stages) Versions Available Square Pixels, Available Pixel Geometries: 1 x 1 mm, 2 x 2 mm Packaging: SMD (10x10 mm) Non-hermetic, TO-5 (9.14 mm Dia.) Hermetic With Cap, TO-8 (15.24 mm Dia.) Hermetic With Cap Sapphire Window IR Detection Band: MWIR, 1.0 µm to 5.0 µm Peak Wavelength of Detection: 3.7 µm D* (λpeak) Uncooled: 2x109 Jones Typical D* (λpeak, 1,000 Hz, 1.2 Hz) Cooled: 1x1010 Jones Time Constant: <2 µs Biasing Voltage: 5 V, 10 V Typical Element Resistance: 0.1 to 2.0 MΩ Responsivity (@Vb = 10 V): 9x103 V/W (1x1 mm), 4.5x103 V/W (2x2 mm) Power: 1 mW Read-out Electronics External (Not Included) Customizable Operating Temperature: +5 °C to +70 °C (SMD), -40 °C to +85 °C (TO-5, TO8) Amplifier Board Transimpedance Gain: 104 to 107 V/A, Adjustable Manually or per Software Amplifier Board Dark Current Cancellation: 1.24 µA to 1 mA, Adjustable Manually or per Software Amplifier Board Power Supply: 5 VDC, 60 mA (mini-USB Connector) Amplifier Board Output: Analog (±10 V), Digital (14 Bit) Amplifier Board Noise: 5 pA @1 kHz, 107 V/A Amplifier Board Dimensions: 75.90 x 35.10 x 28.70 mm (Analog), 89.30 x 35.10 x 26.30 mm (USB Output) Applications: Gas & Flame Detection; Laser Detection

Peak Wavelength Response 2.2, 2.5 µm; Active Area 0.25-10 mm²; Time Constant <100->300 µs; Resistance 0.2-10 MΩ; Typ. Bias Voltage 10-500 VDC New England Photoconductor’s range of lead sulfide (PbS) plate cells series for room temperature applications is available as “open” A, B, and C detectors, as well as hermetically sealed (AM, BM, CM). These detectors in TO-3, TO-5, TO-8, and TO-46 packages feature standard size active areas ranging from 0.25 mm² to 10 mm² – special sizes are available upon request. C Series components can be gridded for low resistance. The PbS room temperature detectors can be supplied with or without leads.   Code Number Active Area Typ. Bias Voltage Typ.  VW-1 Responsivity Package Size .25 0.25 mm² 10 VDC 8-10 x 105 TO-5 & TO-46 .5 0.5 mm² 20 VDC 7-9 x 105 TO-5 & TO-46 1 1 mm² 50 VDC 5-8 x 105 TO-5 & TO-46 2 2 mm² 100 VDC 2-6 x 105 TO-5 3 3 mm² 150 VDC 1-3 x 105 TO-5 5 5 mm² 250 VDC 0.9-2 x 105 TO-8 10 10 mm² 500 VDC 4-8 x 104 TO-3   Key Features: Hermetically Sealed Packages Room Temperature Operation Custom Wavelength Response Custom Test Procedure Active Area: 0.25 mm² to 10 mm² D* Relative Sensitivity (Pk.,600,1): 0.5 x 1011 to 1.2 x 1011 Peak Wavelength Response: 2.2 µm (A & AM,B & BM), 2.5 µm (C & CM) Time Constant: <100 µs (A & AM), 100 µs to 300 µs (B & BM), >300 µs (C & CM) Resistance: 0.2 MΩ to 2.0 MΩ (A & AM,B & BM), 0.5 MΩ to 10 MΩ (C & CM) Hybrid Amplifiers 2 Year Warranty Filters Available  

Peak Wavelength Response 2.5-2.7 µm; Active Area 1-10 mm²; Time Constant 800-1800 µs; Resistance 2-15 MΩ; Typ. Bias Voltage 50-500 VDC New England Photoconductor’s range of thermoelectrically (TE) cooled lead sulfide (PbS) detector series is available as D (1-stage TE cooled, -25°C), D2 (2-stage TE cooled, -35°C), and D21 (2-stage TE cooled, -50°C) types. These detectors in TO-3, TO-5, TO-8, TO-37 and TO-66 packages feature standard size active areas ranging from 1 mm² to 10 mm² – special sizes are available upon request. Code Number Active Area Typ. Bias Voltage Typ.  VW-1 Responsivity Package Size -25°C -35°C -50°C 1 1 mm² 50 VDC 0.9-1 x 106 1-2 x 106 1.5-2.5 x 106 TO-5, TO-8, TO-37, TO-66 2 2 mm² 100 VDC 6-9 x 105 0.6-1 x 106 0.6-1.2 x 106 3 3 mm² 150 VDC 4-6 x 105 5 5 mm² 250 VDC 2-4 x 105 NA 2-4 x 105 TO-8, TO-66 10 10 mm² 500 VDC 1-2 x 105 NA TO-3   Key Features: Hermetically Sealed Packages Custom Wavelength Response Custom Test Procedure Active Area: 1 mm² to 10 mm² D* Relative Sensitivity (Pk.,600,1): 1.5 x 1011(D), 2.5 x 1011(D2), 2.8 x 1011(D21) Peak Wavelength Response: 2.5 µm (D1), 2.6 µm (D2), 2.7 µm (D21) Typ. Time Constant: 800 ms (D), 1200 ms (D2), 1800 ms (D21) Resistance: 2-10 MΩ (D), 2-12 MΩ (D2), 2-15 MΩ (D21) Operating Temperature: -25°C (D), -35°C (D2), -50°C (D21) Cooler Power: 1 V / 2 A (D), 0.8 V / 1.3 A (D2); 1.9 V / 1.4 A (D21) Custom Design Services 2 Year Warranty Filters Available

Peak Wavelength Response 3.8 µm; Active Area 1-10 mm²; Time Constant 2-5 µs; Resistance 0.1-4 MΩ; Typ. Bias Voltage 50-500 VDC New England Photoconductor’s range of lead selenide (PbSe) plate cells series for room temperature applications is available as F (regular performance), FA (medium performance) and FS (high performance) detectors, as well as hermetically sealed (FM, FAM, FSM). These detectors in TO-3, TO-5, TO-8, and TO-46 packages feature standard size active areas ranging from 1 mm² to 10 mm² – special sizes are available upon request. Code Number Active Area Typ. Bias Voltage Typ.  VW-1 Responsivity Package Size 1 1 mm² 50 VDC 1-4 x 104 TO-5 & TO-46 2 2 mm² 100 VDC 0.5-2 x 104 TO-5 3 3 mm² 150 VDC 0.4-1 x 104 TO-5 5 5 mm² 250 VDC 3-6 x 103 TO-8 10 10 mm² 500 VDC 600 TO-3   Key Features: Hermetically Sealed Packages Room Temperature Operation Custom Wavelength Response Custom Test Active Area: 1 mm² to 10 mm² D* Relative Sensitivity (Pk.,1000,1): 0.1-0.3 x 1010(F&FM), 0.4-0.5 x 1010(FA&FAM), 0.6-1.5 x 1010(FS&FSM) Typ. Peak Wavelength Response: 3.8 µm Typ. Time Constant: 2 µs to 5 µs Resistance: 0.1 MΩ to 4 MΩ Hybrid Amplifiers 2 Year Warranty Customized Filters Available Custom Packages

Peak Wavelength Response 4.3-4.6 µm; Active Area 1-10 mm²; Time Constant 5-20 µs; Resistance 0.2-15 MΩ; Typ. Bias Voltage 50-500 VDC New England Photoconductor’s range of thermoelectrically (TE) cooled lead selenide (PbSe) detector series comprises of G (1-stage TE cooled, -25°C), G2 (2-stage TE cooled, -35°C), and G21 (2-stage TE cooled, -50°C) types. Beyond this list, a GS21 type PbSE TE cooled detector is available (2-stage TE cooled, -50°C), featuring select high-performance PbSe – contact AMS Technologies for details. Standard active area sizes for these detectors in TO-3, TO-5, TO-8, TO-37 and TO-66 packages range from 1 mm² to 10 mm² – special sizes are available upon request. Code Number Active Area Typ. Bias Voltage Typ.  VW-1 Responsivity Package Size -25°C -35°C -50°C 1 1 mm² 50 VDC 4-6 x 104 6-10 x 104 10-15 x 104 TO-5, TO-8, TO-37, TO-66 2 2 mm² 100 VDC 2-3 x 104 3-5 x 104 5-8 x 104 3 3 mm² 150 VDC 1-2 x 104 2-3 x 104 3-5 x 104 5 5 mm² 250 VDC 0.8-1 x 104 NA TO-8, TO-66 10 10 mm² 500 VDC 4-6 x 103 NA TO-3 .  Key Features: Hermetically Sealed Packages Custom Wavelength Response Custom Test Procedure Active Area: 1 mm² to 10 mm² D* Relative Sensitivity (Pk.,1000,1): 1-3 x 1010(G, G2), 2-4 x 1010(G21) Peak Wavelength Response: 4.3 µm (G), 4.4 µm (G2), 4.6 µm (G21) Time Constant: 5-10 µs (G), 15 µs (G2), 20 µs (G21) Resistance: 0.2-7 MΩ (G), 0.2-10 MΩ (G2), 0.2-15 MΩ (G21) Operating Temperature: -25°C (G), -35°C (G2), -50°C (G21) Cooler Power: 1.2 V / 2 A (G), 0.8 V / 1.3 A (G2); 2.2 V / 1.2 A (G21) Custom Design Service 2 Year Warranty Customized Filters Available