Skip to main content

PbSe Room Temperature Detectors

Product information "PbSe Room Temperature Detectors"

Peak Wavelength Response 3.8 µm; Active Area 1-10 mm²; Time Constant 2-5 µs; Resistance 0.1-4 MΩ; Typ. Bias Voltage 50-500 VDC

New England Photoconductor’s range of lead selenide (PbSe) plate cells series for room temperature applications is available as F (regular performance), FA (medium performance) and FS (high performance) detectors, as well as hermetically sealed (FM, FAM, FSM). These detectors in TO-3, TO-5, TO-8, and TO-46 packages feature standard size active areas ranging from 1 mm² to 10 mm² – special sizes are available upon request.

Code Number Active Area Typ. Bias Voltage Typ.  VW-1 Responsivity Package Size
1 1 mm² 50 VDC 1-4 x 104 TO-5 & TO-46
2 2 mm² 100 VDC 0.5-2 x 104 TO-5
3 3 mm² 150 VDC 0.4-1 x 104 TO-5
5 5 mm² 250 VDC 3-6 x 103 TO-8
10 10 mm² 500 VDC 600 TO-3

 

Key Features:

  • Hermetically Sealed Packages
  • Room Temperature Operation
  • Custom Wavelength Response
  • Custom Test
  • Active Area: 1 mm² to 10 mm²
  • D* Relative Sensitivity (Pk.,1000,1): 0.1-0.3 x 1010(F&FM), 0.4-0.5 x 1010(FA&FAM), 0.6-1.5 x 1010(FS&FSM)
  • Typ. Peak Wavelength Response: 3.8 µm
  • Typ. Time Constant: 2 µs to 5 µs
  • Resistance: 0.1 MΩ to 4 MΩ
  • Hybrid Amplifiers
  • 2 Year Warranty
  • Customized Filters Available
  • Custom Packages
Manufacturer "New England Photoconductor"
Related links of the manufacturer

Similar products

LEPTON Series Single-pixel VPD PbSe MWIR Detectors
Wavelength Range 1.0-5.0 µm MWIR; Detector Size 1x1, 2x2 mm; Time Constant <2 µs; Responsivity 9x103, 4.5x103 V/W; Element Resistance 0.1-2.0 MΩ New Infrared Technologies’ (NIT) LEPTON Series of single-pixel VPD PbSe MWIR detectors are available uncooled as well as with integrated TECs (thermoelectric cooling elements), with different geometries, packaging solutions and preamplifier boards. LEPTON Series single-pixel detectors come in two standard sizes: 1 mm × 1 mm or 2 mm × 2 mm. LEPTON Series uncooled single-pixel PbSe MWIR detectors can be ordered packaged in SMD or TO-5 housings (with cap, hermetic) with sapphire window. These detectors are operational at room temperature and don’t require any cooling devices. LEPTON Series cooled single-pixel PbSe MWIR detectors are hermetically packaged in a TO-8 can housing with cap and sapphire window and include one or two thermoelectric cooler (TEC) stages for higher sensitivity as well as a thermistor. A calibration curve for the thermistor is available. NIT’s LEPTON Series also includes two low-noise preamplifier boards that are 5-V-powered via mini-USB connector: The LEPTON ANALOG PREAMP provides rotary switches to manually select the detector biasing voltage (4 steps from 1.25 V to 10 V) as well as the transimpedance gain (4 steps from 104 to 107 V/A). This preamp outputs a ±10 V analog voltage on a BNC connector. The LEPTON PREAMP WITH USB OUTPUT allows to digitally select the values for detector biasing voltage and transimpedance gain via software. Here, the output is a digital 14 Bit signal with a maximum sampling rate of 20 ksps. This preamp also features an analog output for the preamplifier stage on SMB or BNC connector. For more pixels, linear and two-dimensional array MWIR cameras are available from New Infrared Technologies – please refer to the LUXELL series of linear array MWIR cameras and TACHYON series of high-speed imaging MWIR cameras respectively. Key Features: Detector Sensing Material: VPD Polycrystalline PbSe Uncooled and TEC-cooled (1-stage, 2-stages) Versions Available Square Pixels, Available Pixel Geometries: 1 x 1 mm, 2 x 2 mm Packaging: SMD (10x10 mm) Non-hermetic, TO-5 (9.14 mm Dia.) Hermetic With Cap, TO-8 (15.24 mm Dia.) Hermetic With Cap Sapphire Window IR Detection Band: MWIR, 1.0 µm to 5.0 µm Peak Wavelength of Detection: 3.7 µm D* (λpeak) Uncooled: 2x109 Jones Typical D* (λpeak, 1,000 Hz, 1.2 Hz) Cooled: 1x1010 Jones Time Constant: <2 µs Biasing Voltage: 5 V, 10 V Typical Element Resistance: 0.1 to 2.0 MΩ Responsivity (@Vb = 10 V): 9x103 V/W (1x1 mm), 4.5x103 V/W (2x2 mm) Power: 1 mW Read-out Electronics External (Not Included) Customizable Operating Temperature: +5 °C to +70 °C (SMD), -40 °C to +85 °C (TO-5, TO8) Amplifier Board Transimpedance Gain: 104 to 107 V/A, Adjustable Manually or per Software Amplifier Board Dark Current Cancellation: 1.24 µA to 1 mA, Adjustable Manually or per Software Amplifier Board Power Supply: 5 VDC, 60 mA (mini-USB Connector) Amplifier Board Output: Analog (±10 V), Digital (14 Bit) Amplifier Board Noise: 5 pA @1 kHz, 107 V/A Amplifier Board Dimensions: 75.90 x 35.10 x 28.70 mm (Analog), 89.30 x 35.10 x 26.30 mm (USB Output) Applications: Gas & Flame Detection; Laser Detection
Product number: SW11625
Manufacturer:
PbS Room Temperature Detectors
Peak Wavelength Response 2.2, 2.5 µm; Active Area 0.25-10 mm²; Time Constant <100->300 µs; Resistance 0.2-10 MΩ; Typ. Bias Voltage 10-500 VDC New England Photoconductor’s range of lead sulfide (PbS) plate cells series for room temperature applications is available as “open” A, B, and C detectors, as well as hermetically sealed (AM, BM, CM). These detectors in TO-3, TO-5, TO-8, and TO-46 packages feature standard size active areas ranging from 0.25 mm² to 10 mm² – special sizes are available upon request. C Series components can be gridded for low resistance. The PbS room temperature detectors can be supplied with or without leads.   Code Number Active Area Typ. Bias Voltage Typ.  VW-1 Responsivity Package Size .25 0.25 mm² 10 VDC 8-10 x 105 TO-5 & TO-46 .5 0.5 mm² 20 VDC 7-9 x 105 TO-5 & TO-46 1 1 mm² 50 VDC 5-8 x 105 TO-5 & TO-46 2 2 mm² 100 VDC 2-6 x 105 TO-5 3 3 mm² 150 VDC 1-3 x 105 TO-5 5 5 mm² 250 VDC 0.9-2 x 105 TO-8 10 10 mm² 500 VDC 4-8 x 104 TO-3   Key Features: Hermetically Sealed Packages Room Temperature Operation Custom Wavelength Response Custom Test Procedure Active Area: 0.25 mm² to 10 mm² D* Relative Sensitivity (Pk.,600,1): 0.5 x 1011 to 1.2 x 1011 Peak Wavelength Response: 2.2 µm (A & AM,B & BM), 2.5 µm (C & CM) Time Constant: <100 µs (A & AM), 100 µs to 300 µs (B & BM), >300 µs (C & CM) Resistance: 0.2 MΩ to 2.0 MΩ (A & AM,B & BM), 0.5 MΩ to 10 MΩ (C & CM) Hybrid Amplifiers 2 Year Warranty Filters Available  
Product number: SW11885
Manufacturer:
PbS TE Cooled Detectors
Peak Wavelength Response 2.5-2.7 µm; Active Area 1-10 mm²; Time Constant 800-1800 µs; Resistance 2-15 MΩ; Typ. Bias Voltage 50-500 VDC New England Photoconductor’s range of thermoelectrically (TE) cooled lead sulfide (PbS) detector series is available as D (1-stage TE cooled, -25°C), D2 (2-stage TE cooled, -35°C), and D21 (2-stage TE cooled, -50°C) types. These detectors in TO-3, TO-5, TO-8, TO-37 and TO-66 packages feature standard size active areas ranging from 1 mm² to 10 mm² – special sizes are available upon request. Code Number Active Area Typ. Bias Voltage Typ.  VW-1 Responsivity Package Size -25°C -35°C -50°C 1 1 mm² 50 VDC 0.9-1 x 106 1-2 x 106 1.5-2.5 x 106 TO-5, TO-8, TO-37, TO-66 2 2 mm² 100 VDC 6-9 x 105 0.6-1 x 106 0.6-1.2 x 106 3 3 mm² 150 VDC 4-6 x 105 5 5 mm² 250 VDC 2-4 x 105 NA 2-4 x 105 TO-8, TO-66 10 10 mm² 500 VDC 1-2 x 105 NA TO-3   Key Features: Hermetically Sealed Packages Custom Wavelength Response Custom Test Procedure Active Area: 1 mm² to 10 mm² D* Relative Sensitivity (Pk.,600,1): 1.5 x 1011(D), 2.5 x 1011(D2), 2.8 x 1011(D21) Peak Wavelength Response: 2.5 µm (D1), 2.6 µm (D2), 2.7 µm (D21) Typ. Time Constant: 800 ms (D), 1200 ms (D2), 1800 ms (D21) Resistance: 2-10 MΩ (D), 2-12 MΩ (D2), 2-15 MΩ (D21) Operating Temperature: -25°C (D), -35°C (D2), -50°C (D21) Cooler Power: 1 V / 2 A (D), 0.8 V / 1.3 A (D2); 1.9 V / 1.4 A (D21) Custom Design Services 2 Year Warranty Filters Available
Product number: SW11886
Manufacturer:
PbSe TE Cooled Detectors
Peak Wavelength Response 4.3-4.6 µm; Active Area 1-10 mm²; Time Constant 5-20 µs; Resistance 0.2-15 MΩ; Typ. Bias Voltage 50-500 VDC New England Photoconductor’s range of thermoelectrically (TE) cooled lead selenide (PbSe) detector series comprises of G (1-stage TE cooled, -25°C), G2 (2-stage TE cooled, -35°C), and G21 (2-stage TE cooled, -50°C) types. Beyond this list, a GS21 type PbSE TE cooled detector is available (2-stage TE cooled, -50°C), featuring select high-performance PbSe – contact AMS Technologies for details. Standard active area sizes for these detectors in TO-3, TO-5, TO-8, TO-37 and TO-66 packages range from 1 mm² to 10 mm² – special sizes are available upon request. Code Number Active Area Typ. Bias Voltage Typ.  VW-1 Responsivity Package Size -25°C -35°C -50°C 1 1 mm² 50 VDC 4-6 x 104 6-10 x 104 10-15 x 104 TO-5, TO-8, TO-37, TO-66 2 2 mm² 100 VDC 2-3 x 104 3-5 x 104 5-8 x 104 3 3 mm² 150 VDC 1-2 x 104 2-3 x 104 3-5 x 104 5 5 mm² 250 VDC 0.8-1 x 104 NA TO-8, TO-66 10 10 mm² 500 VDC 4-6 x 103 NA TO-3 .  Key Features: Hermetically Sealed Packages Custom Wavelength Response Custom Test Procedure Active Area: 1 mm² to 10 mm² D* Relative Sensitivity (Pk.,1000,1): 1-3 x 1010(G, G2), 2-4 x 1010(G21) Peak Wavelength Response: 4.3 µm (G), 4.4 µm (G2), 4.6 µm (G21) Time Constant: 5-10 µs (G), 15 µs (G2), 20 µs (G21) Resistance: 0.2-7 MΩ (G), 0.2-10 MΩ (G2), 0.2-15 MΩ (G21) Operating Temperature: -25°C (G), -35°C (G2), -50°C (G21) Cooler Power: 1.2 V / 2 A (G), 0.8 V / 1.3 A (G2); 2.2 V / 1.2 A (G21) Custom Design Service 2 Year Warranty Customized Filters Available  
Product number: SW11888
Manufacturer:

Customers also viewed

PbS TE Cooled Detectors
Peak Wavelength Response 2.5-2.7 µm; Active Area 1-10 mm²; Time Constant 800-1800 µs; Resistance 2-15 MΩ; Typ. Bias Voltage 50-500 VDC New England Photoconductor’s range of thermoelectrically (TE) cooled lead sulfide (PbS) detector series is available as D (1-stage TE cooled, -25°C), D2 (2-stage TE cooled, -35°C), and D21 (2-stage TE cooled, -50°C) types. These detectors in TO-3, TO-5, TO-8, TO-37 and TO-66 packages feature standard size active areas ranging from 1 mm² to 10 mm² – special sizes are available upon request. Code Number Active Area Typ. Bias Voltage Typ.  VW-1 Responsivity Package Size -25°C -35°C -50°C 1 1 mm² 50 VDC 0.9-1 x 106 1-2 x 106 1.5-2.5 x 106 TO-5, TO-8, TO-37, TO-66 2 2 mm² 100 VDC 6-9 x 105 0.6-1 x 106 0.6-1.2 x 106 3 3 mm² 150 VDC 4-6 x 105 5 5 mm² 250 VDC 2-4 x 105 NA 2-4 x 105 TO-8, TO-66 10 10 mm² 500 VDC 1-2 x 105 NA TO-3   Key Features: Hermetically Sealed Packages Custom Wavelength Response Custom Test Procedure Active Area: 1 mm² to 10 mm² D* Relative Sensitivity (Pk.,600,1): 1.5 x 1011(D), 2.5 x 1011(D2), 2.8 x 1011(D21) Peak Wavelength Response: 2.5 µm (D1), 2.6 µm (D2), 2.7 µm (D21) Typ. Time Constant: 800 ms (D), 1200 ms (D2), 1800 ms (D21) Resistance: 2-10 MΩ (D), 2-12 MΩ (D2), 2-15 MΩ (D21) Operating Temperature: -25°C (D), -35°C (D2), -50°C (D21) Cooler Power: 1 V / 2 A (D), 0.8 V / 1.3 A (D2); 1.9 V / 1.4 A (D21) Custom Design Services 2 Year Warranty Filters Available
Product number: SW11886
Manufacturer:
InGaAs TE Cooled Photodiodes
Wavelength Range 1.2-2.6 µm; Active Area Diameter 0.5-5 mm; Responsivity 0.80-1.3 A/W; Dark Current 0.03-50 nA; Capacitance 60-3500 pF New England Photoconductor’s range of thermoelectrically (TE) cooled indium gallium arsenide (InGaAs) photodiode series comprises IC1 (1-stage TE cooled, -10°C) or IC2 (2-stage TE cooled, -20°C) versions, suitable for typical wavelengths of 1300 nm or 1550 mm, as well as extended InGaAs PIN photodiodes that can be used for wavelengths up to 2600 nm: IE6C1 C1 (1-stage TE cooled, -10°C) or IE6C2 (2-stage TE cooled, -20°C). Available in several different packaging options like TO-5, TO-8, TO-37, or TO-66, these detectors feature active areas with diameters ranging from 500 µm all the way to 5 mm. Custom filters, windows and packages are available on request. Beyond its range of component-type InGaAs photodiodes, New England Photoconductor also provides the AP300-T2 TE cooled InGaAs infrared sensor in a compact (38 mm diameter x 63.5 mm length) and solid case with flexible mounting options – all that is needed is a DC power supply. Available with active sensor area diameters of 0.5 mm, 1.0 mm and 2.0 mm, the AP300-T2 is an amplified extended InGaAs sensor with a 2-stage thermo-electric cooler (TEC). A low-noise amplifier provides detector-noise limited performance up to 2.6 µm in a compact package. You need an OEM custom configuration? We are happy to help – contact us to discuss your project’s requirements. Part Number IC1-1 IC1-2 IC1-3 IC1-5 IC2-1 IC2-2 IC2-3 IC2-5 TEC Stages 1 2 Active Area Diameter 1 mm 2 mm 3 mm 5 mm 1 mm 2 mm 3 mm 5 mm Responsivity @1300nm Min./Typ. 0.80/0.90 A/W Responsivity @1550nm Min./Typ. 0.90/0.95 A/W Typ. NEP @1550 nm 5.0 x 10-15 W/√Hz 1.0 x 10-14 W/√Hz 2.0 x 10-14 W/√Hz 3.0 x 10-14 W/√Hz 3 x 10-15 W/√Hz 7 x 10-15 W/√Hz 1 x 10-14 W/√Hz 2 x 10-14 W/√Hz Dark Current @1 V Typ./Max 0.07/0.35 nA 0.3/1.5 nA 1.0/5.0 nA 2.5/12.5 nA 0.03/0.15 nA 0.15/0.75 nA 0.5/2.5 nA 1.2/6.0 nA Capacitance @1 V 150 pF 550 pF 1000 pF 3500 pF 150 pF 550 pF 1000 pF 3500 pF Cut-Off Frequency @1V 18 MHz 4 MHz 2 MHz 0.6 MHz 18 MHz 4 MHz 2 MHz 0.6 MHz Shunt Resistance 1500 MΩ 300 MΩ 100 MΩ 30 MΩ 3000 MΩ 600 MΩ 200 MΩ 60 MΩ Max. Reverse Voltage 5 V 2 V 5 V Test Temperature -10°C -20°C Storage Temperature -55 to +85°C Max. Cooler Power 1.0 V @2.0 A 2 V @1.3 A 0.8 V @1.3 A 1.9 V @1.4 A Package Options TO-5, TO-37 TO-8, TO-66 TO-5, TO-37 TO-8, TO-66 Thermistor @+25°C 1 KΩ     Part Number IE6C1-.5 IE6C1-1 IE6C1-2 IE6C2-.5 IE6C2-1 IE6C2-2 TEC Stages 1 2 Active Area Diameter 0.5 mm 1 mm 2 mm 0.5 mm 1 mm 2 mm Responsivity @2300 nm Min./Typ. 0.9/1.3 A/W Dark Current @0.5 V Typ./Max. 0.5/4 nA 1.5/7.5 nA 7.5/40  nA 0.2/0.5 nA 0.8/4 nA 4/50 nA Capacitance @0 V 60 pF 200 pF 800 pF 60 pF 200 pF 800 pF Shunt Resistance @10 mV 15 kΩ 3 kΩ 1 kΩ 400 kΩ 60 kΩ 20 kΩ D* 1 x 1011 cm.√Hz/W 2 x 1011 cm.√Hz/W NEP 4 x 10-13 W/√Hz 7 x 10-13 W/√Hz 1 x 10-12 W/√Hz 3 x 10-13 W/√Hz 5 x 10-13 W/√Hz 9 x 10-13 W/√Hz Spectral Range 1.2-2.57 µm 1.2-2.55 µm Cut-Off Frequency (@0 V, -3dB) 50 MHz 15 MHz 5 MHz 50 MHz 15 MHz 5 MHz Test Temperature -10°C -20°C -20°C -20°C Storage Temperature -40 to +125°C Package Options TO-5, TO-8, TO-37, TO-66   Key Features: Active Area Diameter: 500 µm to 5.0 mm Responsivity @1300 nm (IC1, IC2 Series): 0.80 A/W (Min.), 0.90 A/W (Typ.) Responsivity @1550 nm (IC1, IC2 Series): 0.90 A/W (Min.), 0.95 A/W (Typ.) Responsivity @2300 nm (IE6C1, IE6C2 Series): 0.9 A/W (Min.), 1.3 A/W (Typ.) Max. Dark Current: 0.15 nA to 50 nA (@1 V, 0.5 V) Typ. Dark Current: 0.03 nA to 7.5 nA (@5 V, 1 V) Capacitance: 60 pF to 3500 pF (@0 V, 1 V)
Product number: SW11890
Manufacturer: