PV/PVI/PVM/PVMI/PEM/PEMI HgCdTe (MCT) Photovoltaic Detectors

Product number: SW11679

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Product information "PV/PVI/PVM/PVMI/PEM/PEMI HgCdTe (MCT) Photovoltaic Detectors"

2-13 µm; Active Area 0.0025-16 mm²; Responsivity ≥0.1-≥1.5 A/W; Detectivity ≥1.0x10⁷-1.0×10¹² cm·Hz^1/2/W; Resistance 10-1,500 Ω; Package TO39, BNC, TO8, TO 66, PEM-SMA, PEM-TO8

Vigo System’s range of photovoltaic detectors (photodiodes) is based on semiconductor structures with one (PV/PVI) or multiple (PVM/PVMI) homo- or heterojunctions. Absorbed photons produce charge carriers that are collected at the contacts, resulting in external photocurrent.

Photovoltaic detectors have complex current/voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage. Reverse bias voltage is frequently applied to increase responsivity, differential resistance, reduce the shot noise, improve high frequency performance and increase the dynamic range.

Vigo System’s PV, PVI, PVM and PVMI series are based on sophisticated HgCdTe heterostructures for the best performance and stability. The devices are optimized for the maximum performance at λopt.

The PV series features 2.5 µm to 6.5 μm HgCdTe uncooled, ambient temperature IR photovoltaic detectors. Cut on wavelength can be optimized upon request. Reverse bias may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.

PV series devices are also available with 2 µm to 12 μm HgCdTe detectors that are thermoelectrically cooled by two-stage (PV-2TE series), three-stage (PV-3TE series) or even four-stage (PV-4TE series) TEC structures. These series are protected by a 3° wedged sapphire (wAl2O3) or zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects.

The PVI series is optically immersed in order to further improve the parameters of the devices and also available either as 2.5 µm to 6.5 μm HgCdTe uncooled, ambient temperature IR photovoltaic detectors or as 2 µm to 12 μm HgCdTe detectors that are thermoelectrically cooled by two-stage (PVI-2TE series), three-stage (PVI-3TE series) or even four-stage (PVI-4TE series) TEC structures, again with a 3° wedged sapphire (wAl2O3) or zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects.

Vigo System’s PVM series comprises of multiple junction uncooled, ambient temperature photovoltaic detectors, especially useful as large active area detectors operating within the spectral range of 2 µm to 13 μm. PVM series devices are also available as 2 µm to 12 μm HgCdTe two-stage thermoelectrically cooled photovoltaic multiple junction detectors (PVM-2TE series), protected by a 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects.

The PVMI series is optically immersed in order to further improve the parameters of the devices. Corresponding to the PVM series, PVMI series components are also available either as 2 µm to 12 μm HgCdTe uncooled, ambient temperature multiple junction IR photovoltaic detectors or as 2 µm to 13 μm HgCdTe multiple junction detectors that are thermoelectrically cooled by two-stage (PVMI-2TE series), three-stage (PVMI-3TE series) or even four-stage (PVMI-4TE series) TEC structures, again with a 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects.

Vigo System’s PEM series includes 2 µm to 12 μm HgCdTe uncooled, ambient temperature photovoltaic IR detectors based on the photoelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. The PEMI series features the optically immersed versions of these devices.

Both series are designed for the maximum performance at 10.6 μm and especially useful as a large active area detectors to detect CW and low frequency modulated radiation. These devices are mounted in specialized packages with an incorporated magnetic circuit inside. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) windows prevent unwanted interference effects and protect against pollution.

For its range of PV/PVI/PVM/PVMI/PEM/PEMI HgCdTe (MCT) photovoltaic detectors, Vigo System provides a broad range of selected line or configurable line infrared (IR) detection modules that integrate the IR photodetector with the preamplifier and – depending on the module series – also signal processing electronics, optics, heat dissipation systems and other components in a common package.

Key Features:

High Performance, Reliability and Repeatability in Mass Production
Cost-effective Solutions
Fast Delivery
Active Element Material: Epitaxial HgCdTe Heterostructure
Optimal Wavelength λopt: 3.0 to 10.6 μm
With or Without Immersion Microlens Technology
Uncooled, Room Temperature Operation or Thermoelectrically Cooled (2-Stage, 3-Stage or 4-Stage)
Detectivity D*: ≥2.0x10⁷ to ≥1.0×10¹² cm·Hz^1/2/W (λpeak, 20 kHz), ≥1.0×10⁷ to ≥8.0×10¹¹ cm·Hz^1/2/W (λopt, 20 kHz)
Different Sizes of Active/Optical Area A(O): 0.05×0.05 mm² to 4×4 mm²
Current Responsivity Ri(λopt): ≥0.1 to ≥1.5 A/W
Current Responsivity-Active (Optical) Area Length Product Ri(λopt)·L(O) (PVM, PVMI (Non-TE), PEM, PEMI Series): ≥0.002 to ≥0.04 A·mm/W
Resistance R (PVM, PVMI, PEM, PEMI Series): 20 to 1,500 Ω
Resistance-Active (Optical) Area Product (RxA(O)): ≥0.0001 to ≥30,000 Ω·cm²
Short Time Constant τ: ≤1.5 ns (PVM, PVMI), ≤1.2 ns (PEM, PEMI) to ≤350 ns
No Bias Required
PV, PVI Series Bandwidth: Tens of MHz Without Reverse Bias, ≥1GHz With Reverse Bias
No 1/f Noise
Active Element Temperature Tdet: ~195 to ~230 K (TE-cooled Versions)
Different Acceptance Angles Φ: ~36° to ~124°
Different Packages: TO39, BNC, TO8, TO 66, PEM-SMA, PEM-TO8
Different Infrared Windows: None, wAl2O3, wZnSeAR
Wide Range of Dedicated Preamplifiers and Accessories Available

Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense

Manufacturer "Vigo System"

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Manufacturer:

PBPD-001 Polarization Diverse Balanced Photodetector

Polarization Diverse Photodetector; 1310, 1550 nm; Aluminium Enclosure; Signal Conversion Gain >30 V/mW; RF Bandwidth 0-210 MHz; Transimpedance Gain 3x104 V/A OCT and sensor systems require high-performance balanced photodetectors to increase system signal-to-noise ratio (SNR). Polarization-sensitive OCT and similar applications require separate analysis of the two polarization components of a signal. General Photonics’ PBPD-001 polarization diverse balanced photodetector module is specially designed for use in such systems and adds polarization sensitivity to the balanced photodetector circuitry of the BPD-002 or BPD-003 balanced photodetector modules. The PBPD-001 polarization diverse balanced photodetector is fully enclosed in a compact, sturdy aluminium box with two optical input ports, a balanced RF output port and two monitor ports for each polarization component and a 12 VDC power supply port. With a bandwidth up to 200 MHz, a transimpedance gain larger than 30K and a saturation power larger than 130 μW, the PBPD-001 polarization diverse balanced photodetector is ideal for integration into laboratory or commercial OCT, fiber sensor, and high performance optical measurement systems with polarization dependent detection requirements. Key Features: Low Noise High Common Mode Rejection Ratio (CMRR): >25 dB High Signal Conversion Gain: >30 V/mW (Interference Signal) Wide RF Output Bandwidth (3dB): DC to 210 MHz Wavelength Range: 1310 or 1550 nm ±50 nm Compact Size: 100 x 80 27 mm Polarization Crosstalk: <25 dB Transimpedance Gain: 3×104 V/A CW Balanced Saturation Power (At Input): >150 μW Common Mode Rejection Ratio: >25 dB RF Output Voltage Range (at 50 Ω): ±1.75 V Applications: Polarization Sensitive OCT Systems; Polarization Resolved Sensing; Fiber Optic Distributed Sensing; Instrumentation; Research and Development

Product number: SW11301

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