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PV/PVI/PVM/PVMI/PEM/PEMI HgCdTe (MCT) Photovoltaic Detectors

Product information "PV/PVI/PVM/PVMI/PEM/PEMI HgCdTe (MCT) Photovoltaic Detectors"

2-13 µm; Active Area 0.0025-16 mm²; Responsivity ≥0.1-≥1.5 A/W; Detectivity ≥1.0x107-1.0×1012 cm·Hz1/2/W; Resistance 10-1,500 Ω; Package TO39, BNC, TO8, TO 66, PEM-SMA, PEM-TO8

Vigo System’s range of photovoltaic detectors (photodiodes) is based on semiconductor structures with one (PV/PVI) or multiple (PVM/PVMI) homo- or heterojunctions. Absorbed photons produce charge carriers that are collected at the contacts, resulting in external photocurrent.

Photovoltaic detectors have complex current/voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage. Reverse bias voltage is frequently applied to increase responsivity, differential resistance, reduce the shot noise, improve high frequency performance and increase the dynamic range.

Vigo System’s PV, PVI, PVM and PVMI series are based on sophisticated HgCdTe heterostructures for the best performance and stability. The devices are optimized for the maximum performance at λopt.

The PV series features 2.5 µm to 6.5 μm HgCdTe uncooled, ambient temperature IR photovoltaic detectors. Cut on wavelength can be optimized upon request. Reverse bias may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.

PV series devices are also available with 2 µm to 12 μm HgCdTe detectors that are thermoelectrically cooled by two-stage (PV-2TE series), three-stage (PV-3TE series) or even four-stage (PV-4TE series) TEC structures. These series are protected by a 3° wedged sapphire (wAl2O3) or zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects.

The PVI series is optically immersed in order to further improve the parameters of the devices and also available either as 2.5 µm to 6.5 μm HgCdTe uncooled, ambient temperature IR photovoltaic detectors or as 2 µm to 12 μm HgCdTe detectors that are thermoelectrically cooled by two-stage (PVI-2TE series), three-stage (PVI-3TE series) or even four-stage (PVI-4TE series) TEC structures, again with a 3° wedged sapphire (wAl2O3) or zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects.

Vigo System’s PVM series comprises of multiple junction uncooled, ambient temperature photovoltaic detectors, especially useful as large active area detectors operating within the spectral range of 2 µm to 13 μm. PVM series devices are also available as 2 µm to 12 μm HgCdTe two-stage thermoelectrically cooled photovoltaic multiple junction detectors (PVM-2TE series), protected by a 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects.

The PVMI series is optically immersed in order to further improve the parameters of the devices. Corresponding to the PVM series, PVMI series components are also available either as 2 µm to 12 μm HgCdTe uncooled, ambient temperature multiple junction IR photovoltaic detectors or as 2 µm to 13 μm HgCdTe multiple junction detectors that are thermoelectrically cooled by two-stage (PVMI-2TE series), three-stage (PVMI-3TE series) or even four-stage (PVMI-4TE series) TEC structures, again with a 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects.

Vigo System’s PEM series includes 2 µm to 12 μm HgCdTe uncooled, ambient temperature photovoltaic IR detectors based on the photoelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. The PEMI series features the optically immersed versions of these devices.

Both series are designed for the maximum performance at 10.6 μm and especially useful as a large active area detectors to detect CW and low frequency modulated radiation. These devices are mounted in specialized packages with an incorporated magnetic circuit inside. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) windows prevent unwanted interference effects and protect against pollution.

For its range of PV/PVI/PVM/PVMI/PEM/PEMI HgCdTe (MCT) photovoltaic detectors, Vigo System provides a broad range of selected line or configurable line infrared (IR) detection modules that integrate the IR photodetector with the preamplifier and – depending on the module series – also signal processing electronics, optics, heat dissipation systems and other components in a common package.

Key Features:

  • High Performance, Reliability and Repeatability in Mass Production
  • Cost-effective Solutions
  • Fast Delivery
  • Active Element Material: Epitaxial HgCdTe Heterostructure
  • Optimal Wavelength λopt: 3.0 to 10.6 μm
  • With or Without Immersion Microlens Technology
  • Uncooled, Room Temperature Operation or Thermoelectrically Cooled (2-Stage, 3-Stage or 4-Stage)
  • Detectivity D*: ≥2.0x107 to ≥1.0×1012 cm·Hz1/2/W (λpeak, 20 kHz), ≥1.0×107 to ≥8.0×1011 cm·Hz1/2/W (λopt, 20 kHz)
  • Different Sizes of Active/Optical Area A(O): 0.05×0.05 mm² to 4×4 mm²
  • Current Responsivity Ri(λopt): ≥0.1 to ≥1.5 A/W
  • Current Responsivity-Active (Optical) Area Length Product Ri(λopt)·L(O) (PVM, PVMI (Non-TE), PEM, PEMI Series): ≥0.002 to ≥0.04 A·mm/W
  • Resistance R (PVM, PVMI, PEM, PEMI Series): 20 to 1,500 Ω
  • Resistance-Active (Optical) Area Product (RxA(O)): ≥0.0001 to ≥30,000 Ω·cm2
  • Short Time Constant τ: ≤1.5 ns (PVM, PVMI), ≤1.2 ns (PEM, PEMI) to ≤350 ns
  • No Bias Required
  • PV, PVI Series Bandwidth: Tens of MHz Without Reverse Bias, ≥1GHz With Reverse Bias
  • No 1/f Noise
  • Active Element Temperature Tdet: ~195 to ~230 K (TE-cooled Versions)
  • Different Acceptance Angles Φ: ~36° to ~124°
  • Different Packages: TO39, BNC, TO8, TO 66, PEM-SMA, PEM-TO8
  • Different Infrared Windows: None, wAl2O3, wZnSeAR
  • Wide Range of Dedicated Preamplifiers and Accessories Available

Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense

Manufacturer "Vigo System"
Vigo System is a world-leading manufacturer of uncooled infrared (IR) photon detectors. Vigo System’s origins go back to a team of researchers at the Military University of Technology in Warsaw, Poland, that developed a special technique for manufacturing detectors operating without cryocooling. The company’s unique position on the market is confirmed by the status of an official supplier of subassemblies for NASA, resulting in Vigo System detectors being installed on the Curiosity rover exploring the surface of Mars. With its headquarters located near Warsaw, Poland, Vigo System provides a broad portfolio of photoconductive and photovoltaic IR detectors based on materials like HgCdTe (MCT) or InAs/InAsSb. Further detector product ranges offered by Vigo System are superlattice detectors or IR detector arrays. Beyond the detector components, various series of selected line or configurable line infrared (IR) detection modules are available, providing the infrared photodetector integrated with signal processing electronics, optics, heat dissipation systems and other components in a common package.
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PC/PCI HgCdTe (MCT) Photoconductive Detectors
1-15 µm; Active Area 0.000625-16 mm²; Detectivity ≥9.0×106- 4.0×1010 cm·Hz1/2/W; Resistance ≤120-≤1,200 Ω; Package TO39, BNC, TO8, TO 66 Vigo System’s PC/PCI range of photoconductive detectors is based on the photoconductive effect. Infrared radiation generates charge carriers in the semiconductor active region decreasing its resistance. The resistance change is sensed as a current change by applying a constant voltage bias. The PC/PCI series devices are characterized by near linear current-voltage characteristics. The electric field in photoconductors is constant across the device. These components are based on sophisticated HgCdTe heterostructures for the best performance and stability and optimized for the maximum performance at λopt. Vigo System’s PC series features 1 µm to 12 μm HgCdTe uncooled, ambient temperature IR photoconductive detectors. The devices should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The 1/f noise corner frequency increases with the cut-off wavelength. PC series devices are also available thermoelectrically cooled by two-stage (PC-2TE series), three-stage (PC-3TE series) or even four-stage (PC-4TE series) TEC structures, resulting in 1 µm to 14 μm (PC-2TE), 1 µm to 15 μm (PC-3TE) or 1 µm to 16 µm (PC-3TE) HgCdTe photoconductive detectors. These series are protected by a 3° wedged sapphire (wAl2O3, PC-2TE) or zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. The PCI series is optically immersed in order to further improve the parameters of the devices. This series’ cut-on wavelength is limited by GaAs transmittance (~0.9 μm). Corresponding to the PC series, PCI series components are also available either as 1 µm to 12 μm HgCdTe uncooled, ambient temperature IR photoconductive detectors or as 1 µm to 15 µm (PCI-4TE: 16 µm) HgCdTe photoconductive detectors that are thermoelectrically cooled by two-stage (PCI-2TE series), three-stage (PCI-3TE series) or even four-stage (PCI-4TE series) TEC structures, again with a 3° wedged sapphire (wAl2O3, PC-2TE) or wedged zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. For its range of PC/PCI HgCdTe (MCT) photoconductive detectors, Vigo System provides a broad range of selected line or configurable line infrared (IR) detection modules that integrate the IR photodetector with the preamplifier and – depending on the module series – also signal processing electronics, optics, heat dissipation systems and other components in a common package. Key Features: High Detectivity Low Speed High Stability and Reliability, Long Lifetime and MTBF 1/f Noise Corner Frequency fc: ≤10 kHz to ≤20 kHz Active Element Material: Epitaxial HgCdTe Heterostructure Optimal Wavelength λopt: 5.0 to 14.0 μm With or Without Immersion Microlens Technology Uncooled, Room Temperature Operation or Thermoelectrically Cooled (2-Stage, 3-Stage or 4-Stage) Detectivity D*: ≥1.9x107 to ≥4.0×1010 cm·Hz1/2/W (λpeak, 20 kHz), ≥9.0×106 to ≥2.0×1010 cm·Hz1/2/W (λopt, 20 kHz) Different Sizes of Active/Optical Area A(O): 25×25 µm² to 4×4 mm² Current Responsivity-Active (Optical) Area Length Product Ri(λopt)·L(O): ≥0.001 to ≥3.0 A·mm/W Time Constant τ: ≤2 ns to ≤20,000 ns Bias Voltage Active Area Length Ration Vb/L: ≤0.15 V/mm to ≤24.5 V/mm Resistance R: ≤120 to ≤1,200 Ω Active Element Temperature Tdet: ~195 to ~230 K (TE-cooled Versions) Different Acceptance Angles Φ: ~36° to ~124° Different Packages: TO39, BNC, TO8, TO 66 Different Infrared Windows: None, wAl2O3, wZnSeAR Wide Range of Dedicated Preamplifiers and Accessories Available Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense
Product number: SW11680
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