M-Series Small TECs

Cut off Wavelength 980, 1350 nm; Numerical Aperture 0.09 to 0.27; Core Dia. 3.5 to 14 µm; Cladding Dia. 125 µm; Background Loss <10 to <30 dB/kmGreitlex Photonics’ series of Bismuth-doped single mode (SM) optical fibers feature core diameters of 5.6 and 6.5 µm. The Bismuth-Phosphorus co-doped fiber BPDF-SM-6/125-1320 is specially designed for amplifiers, lasers or superfluorescent fiber sources operating at 1270 to 1370 nm, while the Bismuth-Germanium co-doped fiber BGDF-SM-7/125-1430 series is specially designed for amplifiers, lasers or superfluorescent fiber sources operating at 1370 to 1490nm. It replaces similar products from former FORC Photonics. Key Features: Bismuth-doped Fibers Phosphorus or Germanium Co-doped Core Diameter: 5.6, 6.5 µm Core Absorption: 0.3, 0.5 dB/m Cladding Diameter: 125 µm Cut off Wavelength: 1050, 1100 nm Core Numerical Aperture: 0.14 Typ. Peak Gain: >0.2 dB/m Applications: Amplifiers; Lasers; Superfluorescent Fiber Sources

Interactions like SHG, SFG, DFG, SPDC, THG; Nonlinear Optical Materials such as KTP, LN, Mg:LN, Package: Free Space Fiber In / Free Space Out, Fiber-Coupled, Robust HousingAdvR offers versatile frequency conversion modules that can be configured for both waveguide and bulk setups, accommodating a variety of materials such as KTP, LN, and Mg:LN. These diverse material options enable AdvR to effectively cater to the unique demands of its clients, addressing requirements related to wavelength, power capacity, and conversion efficiency. Collaborating closely with customers, AdvR delivers customized solutions tailored to their specific frequency conversion needs, encompassing interactions like SHG, SFG, DFG, SPDC, and THG. The company creates bespoke frequency conversion chips, precisely aligned with customer specifications, including desired interactions and poling periods. AdvR's engineered nonlinear optical materials find applications across a broad spectrum of fields, from quantum information sciences and atomic sensing to atmospheric sciences. MgO:LN Ridge Waveguides: MgO:LN Ridge Waveguides off a wide range of capabilities for nonlinear optical frequency conversion. MgLN’s large transmission window allows for production and downconverison of UV wavelengths (≥350 nm). Its large power handing capability allows for 100’s of mW to be safely produce at 780 nm in a fiber coupled package KTP Waveguides: AdvR is unique in providing KTP waveguide based chips and devices. These waveguides have a broad range of capabilities, but see more the most interest in Type I or Type II interactions to generate photon pairs for quantum applications. RPE LN Waveguides: Undoped LN waveguides allow for superior conversion efficiency for low power or single photon conversion applications. AdvR has developed advanced capabilities in these waveguide chips. On-chip mode filters to allow for efficient coupling into the waveguide, while on-chip WDMs allow for separate coupling of signal and pump wavelengths for SFG and DFG interactions. AdvR offers a range of versatile packaging options to meet various needs in the realm of frequency conversion devices. For those seeking cost-effective solutions with minimal coupling losses, AdvR provides unpackaged waveguide chips, ideal for free-space beam paths and applications where loss reduction is crucial. If your application requires the convenience of input fiber coupling but demands free-space output, lower output loss, or higher SHG output, AdvR offers fiber in/free space out frequency conversion devices. These devices come equipped with PM fiber and FC/APC connectors for input, with options for lens collimated or bare waveguide output, and include an internal TEC for temperature control. Our standard fiber-coupled packaging option is the most popular choice, offering compact and convenient integration into test setups or OEM devices. It features PM fiber input and output with FC/APC connectors, along with an internal TEC for thermal management. For enhanced protection, AdvR presents the Robust Housing Option, which includes a 3mm jacketed fiber and the capability to secure the module to a standard optics table. This option also provides a 9-pin D-sub connector for seamless interfacing with your own standard TEC controller. With these diverse packaging choices, AdvR ensures that you can find the perfect solution to match your specific requirements. Key Features Interactions like SHG, SFG, DFG, SPDC, THG Nonlinear Optical Materials such as KTP, LN, Mg:LN Package: Free Space Fiber In / Free Space Out, Fiber-Coupled, Robust Housing Applications: Quantum Information Sciences; Atomic Sensing; Atmospheric Sciences

1940-1960 nm; Fixed or Tunable; Output Energy ≤250 µJ; Repetition Rate ≤5 kHz; Pulse Width 30-50 ns Teem Photonics’ passively and actively Q-switched DPSS lasers with a fixed wavelength of 1.95 µm or a tunable output from 1.94 µm to 1.96 µm delivers single longitudinal mode pulses with up to 250 µJ of energy per pulse. This laser features a pulse duration of 30 ns to 50 ns and a tunable repetition rate of up to 5 kHz. For further technical details please contact the AMS Technologies DPSS laser experts. Key Features: Wavelength: 1.95 µm (Fixed) or 1.94 µm to 1.96 µm (Tunable) Single Longitudinal Mode Energy per Pulse: Up to 250 µJ Pulse Duration (Width): 30 ns to 50 ns Repetition Rate: Tunable up to 5 kHz

Active Area Diameter 0.5 to 1.5 mm; Responsivity 8 to 128 A/W; Capacitance 1.6 to 4 pF; Package TO-5, TO-8 Flange, TO-18 Exelitas‘ series of high-performance, rear-entry, “reach-through” silicon avalanche photodiodes (APDs) offer the best compromise in terms of cost and performance for applications requiring high-speed and low-noise photon detection from 400 nm up to 1100 nm. These Silicon APDs feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. The active area varies from 0.5 mm to 1.5 mm. C30817EH: This silicon avalanche photodiode for general-purpose applications is designed using a double-diffused “reach through” structure. This structure provides high responsivity between 400 to 1100 nm, as well as fast rise and fall times at all wavelengths. Since the fall time characteristics has no “tail”, the responsivity of the device is independent of modulation frequency up to about 200 MHz. C30884EH: This silicon avalanche photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz. This Si APD is made using a double-diffused “reach-through” structure and is optimized for high responsivity at wavelengths of below 1000 nm. C30902BH: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active area diameter. Suitable for biomedical and analytical applications, this Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. C30902EH: This high-performance silicon avalanche photodiode (APD) has an active area diameter of 0.5 mm and is suitable for biomedical and analytical applications. This Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths. C30902EH-2: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active diameter and a 905 nm bandpass filter in a TO-18 housing. This Si APD is suitable for biomedical and analytical applications. C30902SH: Selected high-performance silicon avalanche photodiodes with extremely low noise and bulk dark current. Suitable for biomedical and analytical applications, this Si APD provides 0.5 mm active diameter in TO-18 housing. C30902SH-2: High-performance, low-noise, selected silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in a TO-18 housing with an inline 905 nm bandpass filter. C30902SH-TC: High-performance, low-noise, selected, single-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing. C30902SH-DTC: High-performance, low-noise, selected, double-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing. C30916EH: Large-area silicon avalanche photodiode with 1.5 mm active area diameter in TO-5 housing.   Part Number Active Diameter Capacitance Rise/Fall Time Dark Current Breakdown Voltage min Breakdown Voltage max Temperature Coefficient Typical Gain Responsivity NEP Package                 830 nm 900 nm 1060 nm     Unit mm pF ns nA V V V/°C   A/W A/W A/W fW/√Hz   C30817EH 0.8 2 2 50 300 475 2.2 120 - 75 - 13 TO-5 C30884E 0.8 4 1 100 190 290 1.1 100 - 63 8 13 TO-5 C30902BH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 Ball lens TO-18 C30902EH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, flat window C30902EH-2 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, built-in 905 nm filter C30902SH 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, flat window C30902SH-2 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, built-in 905 nm filter C30902SH-TC 0.5 1.6 0.5 2 225 - 0.7 250 128 108 - 0.04 pA/√Hz TO-8 flange C30902SH-DTC 0.5 1.6 0.5 1 225 - 0.7 250 128 108 - 0.02 pA/√Hz TO-8 flange C30916EH 1.5 3 3 100 315 490 2.2 80 - 50 12 20 TO-5 Applications: LIDAR; Laser Detection; Range Finding; Small-signal Fluorescence; Photon Counting; Bar Code Scanning; Optical Communications; High-speed Switching Systems; Transit-time Measurements; Biomedical and Analytical Applications; Confocal Microscopes; Spectrophotometers; Luminometers; DNA Sequencers, Particle Sizing 

Power Cord EU Powercable (EU to IEC).