InGaAs TE Cooled Photodiodes
Wavelength Range 1.2-2.6 µm; Active Area Diameter 0.5-5 mm; Responsivity 0.80-1.3 A/W; Dark Current 0.03-50 nA; Capacitance 60-3500 pF
New England Photoconductor’s range of thermoelectrically (TE) cooled indium gallium arsenide (InGaAs) photodiode series comprises IC1 (1-stage TE cooled, -10°C) or IC2 (2-stage TE cooled, -20°C) versions, suitable for typical wavelengths of 1300 nm or 1550 mm, as well as extended InGaAs PIN photodiodes that can be used for wavelengths up to 2600 nm: IE6C1 C1 (1-stage TE cooled, -10°C) or IE6C2 (2-stage TE cooled, -20°C).
Available in several different packaging options like TO-5, TO-8, TO-37, or TO-66, these detectors feature active areas with diameters ranging from 500 µm all the way to 5 mm. Custom filters, windows and packages are available on request.
Beyond its range of component-type InGaAs photodiodes, New England Photoconductor also provides the AP300-T2 TE cooled InGaAs infrared sensor in a compact (38 mm diameter x 63.5 mm length) and solid case with flexible mounting options – all that is needed is a DC power supply.
Available with active sensor area diameters of 0.5 mm, 1.0 mm and 2.0 mm, the AP300-T2 is an amplified extended InGaAs sensor with a 2-stage thermo-electric cooler (TEC). A low-noise amplifier provides detector-noise limited performance up to 2.6 µm in a compact package. You need an OEM custom configuration? We are happy to help – contact us to discuss your project’s requirements.
Part Number
IC1-1
IC1-2
IC1-3
IC1-5
IC2-1
IC2-2
IC2-3
IC2-5
TEC Stages
1
2
Active Area Diameter
1 mm
2 mm
3 mm
5 mm
1 mm
2 mm
3 mm
5 mm
Responsivity @1300nm Min./Typ.
0.80/0.90 A/W
Responsivity @1550nm Min./Typ.
0.90/0.95 A/W
Typ. NEP @1550 nm
5.0 x 10-15 W/√Hz
1.0 x 10-14 W/√Hz
2.0 x 10-14 W/√Hz
3.0 x 10-14 W/√Hz
3 x 10-15 W/√Hz
7 x 10-15 W/√Hz
1 x 10-14 W/√Hz
2 x 10-14 W/√Hz
Dark Current @1 V Typ./Max
0.07/0.35 nA
0.3/1.5 nA
1.0/5.0 nA
2.5/12.5 nA
0.03/0.15 nA
0.15/0.75 nA
0.5/2.5 nA
1.2/6.0 nA
Capacitance @1 V
150 pF
550 pF
1000 pF
3500 pF
150 pF
550 pF
1000 pF
3500 pF
Cut-Off Frequency @1V
18 MHz
4 MHz
2 MHz
0.6 MHz
18 MHz
4 MHz
2 MHz
0.6 MHz
Shunt Resistance
1500 MΩ
300 MΩ
100 MΩ
30 MΩ
3000 MΩ
600 MΩ
200 MΩ
60 MΩ
Max. Reverse Voltage
5 V
2 V
5 V
Test Temperature
-10°C
-20°C
Storage Temperature
-55 to +85°C
Max. Cooler Power
1.0 V @2.0 A
2 V @1.3 A
0.8 V @1.3 A
1.9 V @1.4 A
Package Options
TO-5, TO-37
TO-8, TO-66
TO-5, TO-37
TO-8, TO-66
Thermistor @+25°C
1 KΩ
Part Number
IE6C1-.5
IE6C1-1
IE6C1-2
IE6C2-.5
IE6C2-1
IE6C2-2
TEC Stages
1
2
Active Area Diameter
0.5 mm
1 mm
2 mm
0.5 mm
1 mm
2 mm
Responsivity @2300 nm Min./Typ.
0.9/1.3 A/W
Dark Current @0.5 V Typ./Max.
0.5/4 nA
1.5/7.5 nA
7.5/40 nA
0.2/0.5 nA
0.8/4 nA
4/50 nA
Capacitance @0 V
60 pF
200 pF
800 pF
60 pF
200 pF
800 pF
Shunt Resistance @10 mV
15 kΩ
3 kΩ
1 kΩ
400 kΩ
60 kΩ
20 kΩ
D*
1 x 1011 cm.√Hz/W
2 x 1011 cm.√Hz/W
NEP
4 x 10-13 W/√Hz
7 x 10-13 W/√Hz
1 x 10-12 W/√Hz
3 x 10-13 W/√Hz
5 x 10-13 W/√Hz
9 x 10-13 W/√Hz
Spectral Range
1.2-2.57 µm
1.2-2.55 µm
Cut-Off Frequency (@0 V, -3dB)
50 MHz
15 MHz
5 MHz
50 MHz
15 MHz
5 MHz
Test Temperature
-10°C
-20°C
-20°C
-20°C
Storage Temperature
-40 to +125°C
Package Options
TO-5, TO-8, TO-37, TO-66
Key Features:
Active Area Diameter: 500 µm to 5.0 mm
Responsivity @1300 nm (IC1, IC2 Series): 0.80 A/W (Min.), 0.90 A/W (Typ.)
Responsivity @1550 nm (IC1, IC2 Series): 0.90 A/W (Min.), 0.95 A/W (Typ.)
Responsivity @2300 nm (IE6C1, IE6C2 Series): 0.9 A/W (Min.), 1.3 A/W (Typ.)
Max. Dark Current: 0.15 nA to 50 nA (@1 V, 0.5 V)
Typ. Dark Current: 0.03 nA to 7.5 nA (@5 V, 1 V)
Capacitance: 60 pF to 3500 pF (@0 V, 1 V)
Product number:
SW11890
Manufacturer: