InGaAs Detectors and Arrays

Product Portfolio
AMS Technologies offers a broad variety of detectors and arrays that are based on indium gallium arsenide (InGaAs). General-purpose InGaAs photodiodes are available as well as large active area, segmented, back-illuminated diodes or InGaAs photodiode arrays.

For high-performance applications, AMS Technologies also provides InGaAs PIN photodiodes as well as InGaAs avalanche photodiodes (APDs). In addition to the photodiode devices, our InGaAs detector assemblies include photodiode-amplifier hybrids, mini-DIL optical receivers or pigtail assemblies.

General-purpose InGaAs Photodiodes
Our general purpose InGaAs photodiode series is available in 3-lead isolated TO-46 cans with AR-coated windows or micro lenses as well as with FC, SC, ST and SMA receptacles. Additional series of general-purpose InGaAs photodiodes come in molded plastic, SMD 1206 and hermetic TO packages, designed for applications requiring low dark current, high reliability and high sensitivity.

We also carry various series of InGaAs monitor photodiodes mounted on metalized or gull wing ceramic substrates with active areas from 70 to 500 µm, some of them featuring angled substrate to reduce optical backreflection or a glass window attached to the ceramic. The series of large active area InGaAs photodiodes features active area diameters of up to 3 mm. Designed to be flip chip mounted or assembled face down, the back-illuminated InGaAs photodiodes can help to minimize the overall dimensions.

PIN and Avalanche InGaAs Photodiodes
A series of InGaAs PIN photodiodes is available in TO-5, TO-8 or TO-18 package, some models with single or dual thermoelectric cooler (TEC) included in the package. We also carry a series of high-performance InGaAs avalanche photodiodes (APDs), comprising high-speed, large-area devices optimized for use at 1550 nm.

Segmented InGaAs Photodiodes, Arrays
The series of segmented InGaAs photodiodes with high response uniformity and low crosstalk between the elements is ideal for accurate nulling or centering as well as beam profiling applications. InGaAs photodiode arrays are available with 4, 8, 12 and 16 channels.

InGaAs Detector Assemblies
The portfolio comprises several series of InGaAs photodiode and amplifier hybrids, integrating the InGaAs photodetector and transimpedance amplifier (TIA) in the same package. InGaAs photodiode-amplifier hybrids are available for high-speed communication with up to 622 Mbps or 2.5 Gbps. Devices with integrated burst-mode TIA can even lift the input data rate to 10 Gbps burst.

InGaAs photodiode pigtail assemblies feature high-speed InGaAs detectors in a dedicated TO package with the fiber pigtail optically aligned to the InGaAs diode. Dedicated pigtail assemblies are available for OTDR applications or single photon avalanche detection. A photodiode pigtail assembly in mini-DIL form factor completes the product range.

Related Products
Complementing our InGaAs detectors and arrays, we also offer a broad range of additional discrete detectors and arrays based on other materials like silicon (for visible to near-IR wavelengths) or PbS/PbSe (for higher wavelengths further into the infrared domain). Other discrete detectors and arrays available from AMS Technologies include devices based on materials like HgCdTe, InAs/InAsSb or GaAs, but also balanced photodetectors, integrated optical receiver modules or infrared detection modules.

For detecting or recording even larger two-dimensional arrays of pixels, have a look at our range of cameras, including CCD and CMOS cameras, IR cameras and x-ray cameras.

Guiding and focusing light onto optical detectors can be done using AMS Technologies’ broad portfolio of optics components like optical lenses, optical filters or optical windows, as well as our optical fibers.

Definition
The essential component of indium gallium arsenide (InGaAs) detectors and arrays is usually an InGaAs photodiode – a semiconductor light sensor based on InGaAs. Light falling on the p-n or PIN junction within the active area of a photodiode generates an electric current due to the internal photoelectric effect (for details see Discrete Detectors and Arrays). The sensitivity range of InGaAs photodiodes is approximately between 800 and 2600 nm. Compared to semiconductor materials with similarly high sensitivity in the infrared range, such as germanium, indium gallium arsenide has a smaller dark current and a faster response time for the same detector size.

Key properties of InGaAs photodiodes are the size of the sensor’s active area, the spectral wavelength range, the radiometric sensitivity (photocurrent intensity per incident light power, in A/W), the wavelength with the highest sensitivity (peak wavelength), the average noise power (NEP, Noise Equivalent Power, in W/√Hz) and the maximum dark current. InGaAs photodiodes are available in a wide variety of sizes, designs and packages, from hermetically sealed TO packages to plastic molded devices and SMT designs based on metalized ceramic substrates.

Multi-element and Segmented InGaAs Detectors, Arrays, PSDs
While multi-element InGaAs detector arrays are made of multiple, lined-up, separate photodiodes, segmented position sensing detectors (PSDs) consist of a sensor surface that is segmented to align a light beam or determine the position at which the beam hits the sensor.

In segmented PSDs, the common photodiode substrate is usually divided into two (one-dimensional) or four segments of equal size, separated by a gap or dead region. For correct operation, the diameter of the light beam to be measured must be larger than this gap, and the beam must hit at least parts of all of the segments.

InGaAs Avalanche Photodiodes (APDs)
Avalanche photodiodes (APDs) have a higher sensitivity and a higher speed compared to standard InGaAs diodes. In addition to the internal photoelectric effect generating a photocurrent, these components use the avalanche effect for internal amplification. InGaAs APDs are suitable as detectors for very low-intensity radiation and even single photon counting in the infrared domain (800 to 2600 nm).

Applications
InGaAs photodiodes are used in a wide range of applications such as spectroscopy, medical imaging, laser beam alignment, analytics, surface characterization, optical position sensing or optical communication.

Alternative Terms: InGaAs Optical Detector; InGaAs Optical Array; InGaAs Avalanche Photodiode; InGaAs APD; InGaAs Detector Module

Avalanche Photodiode APD Module for OTDR

1250-1650 nm; Responsivity 25 A/W; Breakdown Voltage 40-70 V; Dark Current 1 nA; Package 3-pin TO 46 Wooriro’s APD module for OTDR applications is based on an InGaAs/InP avalanche photodiode (APD) in TO-46 package. This module’s APD is pigtailed, and the module can be ordered either without connector or with a SC, LC or FC type optical connector in UPC or APC version. Designed for an optical wavelength range of 1250 nm to 1650 nm, the APD module for OTDR features a very low dark current of 1 nA typical at 98% breakdown voltage. Typical responsivity is 25 A/W at 1550 nm wavelength and 10 nW optical input power. Key Features: InGaAs/InP Avalanche Photodiode APD Low Dark Current: 1 nA (Typical, @0.98 x Breakdown Voltage) High Reliability Optical Wavelength Range: 1250 nm to 1650 nm Responsivity: 25 A/W Typ. (VAPD = 0.98 VBR, λ = 1550 nm, Pin = 10 nW) Breakdown Voltage VBR: 40 V to 70 V (Id = 10 µA) Temperature Coefficient of VBR: 90 mV/°C (-40 °C to +85 °C) Dimensions: Ø 6 mm x Length 20.2 mm Applications: OTDR; Optical Sensor; Optical Test Instruments

Product number: SW11675

Manufacturer: Wooriro

Avalanche Photodiode APD with Burst-mode TIA

Integrated TIA With Burst Mode; 1260-1640 nm; Responsivity 10.5 A/W; Breakdown Voltage 23-31 V; Dark Current 500 nA; Package 6-pin TO 46 Wooriro’s avalanche photodiode (APD) with burst-mode TIA is packaged in a 6-pin TO-46 case with aspherical lens cap. The APD’s integrated transimpedance amplifier (TIA) can be operated in a burst mode that lifts the input data rate from 1.25 Gb/s continuous to 10.3125 Gb/s burst. Users can control the burst mode via a logic signal connected to pin 5 of the APD’s TO-46 case. Designed for an optical wavelength range of 1260 nm to 1640 nm, the APD with burst-mode TIA features a dark current of 500 nA typical at 98% breakdown voltage. Typical responsivity is 10.5 A/W at 1310 nm wavelength and 50 µW optical input power. Key Features: Integrated Transimpedance Amplifier (TIA) Burst Mode for 10 Gb/s Standard TO-46 Package With Aspherical Lens Cap Optical Wavelength Range: 1260 nm to 1640 nm Responsivity: 10.5 A/W Typ. (λ = 1310 nm, Pin = 50 µW, VAPD = 0.95 VBR) TIA Supply Voltage: 3.3 V (2.97 V to 3.63 V) TIA Supply Current: 40 mA Typ. Transimpedance: 2 kΩ Typ. (Differential, 50 Ω on Each Output) APD Breakdown Voltage VBR: 23 V to 31 V Temperature Coefficient of VBR: 20 mV/°C (-40 °C to +85 °C) APD Dark Current: 500 nA (Typical, @0.9 x Breakdown Voltage) Sensitivity: -32 dBm Typ. (CM @Continuous Mode 10.3125 Gb/s NRZ, PRBS = 231 – 1, BER = 1E-3, ER = 5.97 dB, λ = 1310 nm) Dimensions: Ø 4.67 mm x Length 3.38 mm Applications: IEEE 802.3av 10G 10G-EPON OLT

Product number: SW11676

Manufacturer: Wooriro

EOPD Molded Plastic, Hermetic TO and SMD Photodiodes

265-1300 nm; UV, Visible, IR; Active Area 0.1-15 mm²; Responsivity 0.18-0.9 A/W; Dark Current 0.00001-2,000 nA; Package 5 mm Molded Plastic, TO-5, TO-46, TO-52, SMD 1206 EPIGAP offers a wide range of photodiodes in the ultraviolet (UV), visible (VIS) and infrared (IR) spectral range. The EOPD series includes GaP photodiodes, Si and SiC photodiodes as well as InGaAs and AlGaAs photodiodes. Available in 5 mm molded plastic, SMD 1206 and hermetic TO packages (TO-5, TO-46 and TO-52), the EOPD series photodiodes are designed for applications requiring low dark current, high reliability and high sensitivity. Further advantages of the EOPD series photodiodes are degradation stability, good matching with LEDs, no stray light problems and optional miniaturization. The range of standard products is supplemented by specialties with larger active sensor surfaces or extended sensitivity from 150 nm (low UV) up to 2600 nm in the higher infrared range. For customer-specific designs, EPIGAP Optronic’s photodiode components are also available as bare photodiode chips (EOPC series) with high sensitivity and low dark current. Please contact the AMS Technologies photodiode experts to find the right solution that meets your design project’s requirements. We would like to support you and look forward to your inquiries! Key Features: Product Max. Sensitivity Package Active Area Responsivity Dark Current Downloads EOPD-280-0-0.3-1 265 nm TO-52 0.1 mm2 0.18 A/W 10 fA Datasheet EOPD-525-1-0.9-1 525 nm SMD 1206 0.73 mm2 0.3 A/W 5 pA Datasheet EOPD-525-1-0.9-2 525 nm SMD 1206 0.73 mm2 0.3 A/W 5 pA Datasheet EOPD-940-0-2.52 940 nm TO-5 5 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-3.57 940 nm TO-5 10 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-15 940 nm TO-5 15 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-5.8Q 940 nm TO-5 4 x 1.44 mm2 0.6 A/W 0.5 nA Datasheet EOPD-1300-0-0.1-1 1300 nm TO-46 0.1 mm2 0.8 A/W 1 µA Datasheet EOPD-1300-0-0.8-1 1300 nm TO-46 0.8 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-0-1.0-1 1300 nm TO-46 1 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-0-1.5-3 1300 nm TO-46 1.5 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-1-0.3 1300 nm SMD 1206 0.3 mm2 0.8 A/W 0.3 nA Datasheet EOPD-1300-5-0.3 1300 nm 5 mm 0.3 mm2 0.9 A/W 15 pA Datasheet EOPD-1300-0-0.3-1 1300 nm TO-46 0.3 mm2 0.8 A/W 1 µA Datasheet Applications: Universal measurements in the UV, VIS and IR Range; Sterilization Lamp Monitoring; Flame Monitoring; Alarm Systems; Light Barriers; Daylight Sensors; Nearly Vλ-matched Detectors; Colorimeters; Photometers; Spectroscopy Equipment; Fluorescence; Beam Centering; Optical Encoders; High-speed Optical Communications; Optical LAN; Optical Switches; Ethernet Fiber Channel; Safety Equipment; Light Barriers

Product number: SW11567

Manufacturer: EPIGAP Optronic

FCI-H125/250G-InGaAs-75 InGaAs Photodiode-Amplifier Hybrids

1100 to 1650 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm; Responsivity 1,600 to 2,500 V/W; Transimpedance 2,800 Ω; Package TO-46 OSI Optoelectronics’ FCI-H125/250G-InGaAs-75 series are compact and integrated high-speed InGaAs photodetectors with wide dynamic range transimpedance amplifiers (TIA). Combining the detector with the TIA in a hermetically sealed 4-pin TO-46 package provides ideal conditions for high-speed signal amplification. High speed and superior sensitivity make these devices ideal for high bit rate receivers used in LAN, MAN, WAN and other high speed communication systems. TO packages come standard with a lensed cap to enhance coupling efficiency, or with a broadband double-sided anti-reflective (AR) coated flat window. The FCI-H125/250G-InGaAs-75 series are also offered with FC, SC, ST and SMA receptacles. Key Features: InGaAs Photodetector / Low Noise Transimpedance Amplifier High Bandwidth / Wide Dynamic Range Hermetically Sealed TO-46 Can Single +3.3 to +5 V Power Supply Spectral Range 1100 to 1650 nm Differential Output Applications: High-speed Optical Communications; Gigabit Ethernet; Fibre Channel; ATM; SONET OC-48 / SDH STM-16

Product number: SW11044

Manufacturer: OSI Optoelectronics

FCI-H622M-InGaAs-75 InGaAs Photodiode-Amplifier Hybrid

1100 to 1650 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm; Responsivity 16 V/mW; Transimpedance 18 kΩ; Package TO-46 OSI Optoelectronics’ FCI-H622M-InGaAs-75 is a high-speed 75 µm InGaAs photodetector integrated with a wide dynamic range transimpedance amplifier (TIA). Combining the detector with the TIA in a hermetically sealed 4-pin TO-46 package provides ideal conditions for high-speed signal detection and amplification. Low capacitance, low dark current and high responsivity of the detector, along with low noise characteristics of the integrated TIA, give rise to excellent sensitivity. In practice, these devices are ideal for datacom and telecom applications. Cost-effective TO-46 packages come standard with a lensed cap for design simplification, or with a broadband double-sided anti-reflective (AR) coated flat window. The FCI-H622M-InGaAs-75 is also offered with FC, SC, ST and SMA receptacles. Key Features: Low Noise Transimpedance Amplifier High Bandwidth Wide Dynamic Range Single +3.3 V Power Supply Spectral Range 1100 to 1650 nm Differential Output Applications: High-speed Optical Communications; ATM; SONET OC-3 / OC-12; SDH STM-1 / STM-4; Optical Receivers

Product number: SW11045

Manufacturer: OSI Optoelectronics

FCI-InGaAs-300B1XX Back-illuminated InGaAs Photodiodes

900 to 1700 nm; Active Area 0.07 mm2; AA Dia. 0.3 mm, Pitch 0.5 mm; Responsivity 0.80 to 0.85 A/W; Capacitance 8 to 10 pF; Package Flip Chip Mountable OSI Optoelectronics’ FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They are available as single element diodes or 4 - or 8- element arrays with an active area of 300 µm each. These back-illuminated InGaAs photodiodes/arrays are designed to be flip chip mounted (active area facing up), or assembled face down minimizing the overall dimensions. These low inductance, low dark current, and low capacitance back illuminated photodiodes/arrays come with or without ceramic substrates. Key Features: Back Illumination High Responsivity on Both Front and Back Low Noise Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Multichannel Fiber Optic Receiver; Power Monitoring; Single Mode (SM) Multi Mode (MM) Fiber Optic Receiver; Fast Ethernet, SONET/SDH OC-3/STM-1 ATM; Instrumentation and Analog Receivers

Product number: SW11027

Manufacturer: OSI Optoelectronics

FCI-InGaAs-36C InGaAs Photodiodes

910 to 1650 nm; Active Area 0.001 mm2; AA Dia. 0.036 mm; Responsivity 0.75 to 0.85 A/W; Capacitance 0.16, 0.2 pF; Package Special Chip-size OSI Optoelectronics' FCI-InGaAs-36C is an OC-192 (SONET/SDH) capable photosensitive device, exhibiting low dark current and good performance stability. Both anode and cathode contacts appear on the chip's top facet. FCI-InGaAs-36C is an ideal component in high-speed optical data transport applications at 10 Gbps, responding to a spectral envelope that spans from 910 to 1650 nm. Key Features: High Speed: 10 Gbps Data Rates Low Dark Current Front Illuminated High Responsivity: Typ. 0.8 A/W @ 1550 nm Diameter of Light Sensitive Area: 36 µm Low Capacitance Applications: High Speed Optical Communications; OC-192; Optical Networking; Optical Measurement

Product number: SW11046

Manufacturer: OSI Optoelectronics

FCI-InGaAs-QXXX Segmented InGaAs Photodiodes

900 to 1700 nm; Active Area 0.79, 7.07 mm2; AA Dia. 1.0, 3.0 mm; Rise Time 3, 24 ns; Responsivity 0.85 to 0.95 A/W; Capacitance 25, 225 pF; Package TO-5, TO-8 OSI Optoelectronics’ FCI-InGaAs-QXXX series are large active area InGaAs photodiodes segmented into four separate active areas. These photodiodes come in 1 mm (FCI-InGaAs-Q1000) and 3 mm (FCI-InGaAs-Q3000) active area diameter. The FCI-InGaAs-QXXX quad series with high response uniformity and low crosstalk between the elements are ideal for accurate nulling or centering applications as well as beam profiling applications. They exhibit excellent responsivity from 1100 to 1620nm, are stable over time and temperature, and feature fast response times necessary for high speed or pulse operation. FCI-InGaAs-QXXX photodiodes are packaged in isolated TO-5 or TO-8 cans with a broadband double-sided anti-reflective (AR) coated flat window and are also available mounted on ceramic substrate on request. Key Features: High Responsivity Low Noise Spectral Range: 900 to 1700nm Low Crosstalk Wide Field of View Applications: Accurate Nulling or Centering; Position Sensing; Beam Alignment; Beam Profiling

Product number: SW11026

Manufacturer: OSI Optoelectronics

FCI-InGaAs-WCER-LR InGaAs Photodiodes

900 to 1700 nm; Active Area 0.125 mm2; AA Dimensions 0.25 x 0.5 mm; Responsivity 0.80 to 0.95 A/W; Capacitance 15 pF; Package Ceramic Substrate; Reflectance <0.6 OSI Optoelectronics’ FCI-InGaAs-WCER-LR series of InGaAs photodiodes feature a very low reflectance. Designed for telecommunication applications, the FCI-InGaAs-WCER-LR series of InGaAs/InP photodiodes has a typical optical reflectance of less than 0.6% from 1520 to 1620 nm. This ultra-low reflectance over the wide wavelength range was achieved by depositing a proprietary multi-layered anti-reflective (AR) coating directly onto the surface of the InGaAs/InP photodiode. Key Features: Reflectance: Less Than 0.6% Low Noise High Responsivity High Speed Spectral Range: 900 to 1700 nm Applications: Wavelength Lockers / Wavelength Monitoring; Lasers Back Facet Monitoring; DWDM; Instrumentation

Product number: SW11029

Manufacturer: OSI Optoelectronics

FCI-InGaAs-XX-XX-XX InGaAs Photodiode Pigtail Assemblies

900 to 1700 nm; Active Area 0.004, 0.011 mm2; AA Dia. 0.075, 0.120 mm; Rise Time 0.2, 0.3 ns; Responsivity 0.75 to 0.95 A/W; Capacitance 0.65, 1.0 pF; Package TO-46, Ceramic Substrate, Connector Type FC, SC, ST OSI Optoelectronics’ FCI-InGaAs-XX-XX-XX series of high-speed, IR-sensitive InGaAs photodiodes with active area diameters of 75 and 120 µm are part of OSI Optoelectronics’s family of high-speed IR sensitive detectors with fiber pigtail package. The single mode (SM) or multi mode (MM) fiber is optically aligned to either the hermetically sealed InGaAs diode in TO-46 lens cap package enhancing the coupling efficiency and stability, or directly to the InGaAs diode mounted on a ceramic substrate. High responsivity and low capacitance make these devices ideal for very high bit rate receivers used in LAN, MAN, WAN and other high speed communication and monitoring/instrumentation systems. Angle polished connectors and custom packages are also available. For a solution involving FC connector and TO-46 attachment, users may consider either FCI-InGaAs-75-SM-FC or FCI-InGaAs-120-SM-FC in single mode operation. Similarly, the multi-mode variant is available in FCI-InGaAs-120-MM-FC using 62.5/125 µm fiber. The back-reflection of -30dB typical is to be experienced in multi mode (MM) based solutions. Key Features: High Speed High Responsivity Spectral Range 900nm to 1700nm Low Back Reflection Applications: Very High Bit Rate Receivers Used in LAN, MAN, WAN; High-speed Optical Communications; Gigabit Ethernet / Fibre Channel; SONET / SDH, ATM; Optical Power Monitoring / Instrumentation

Product number: SW11035

Manufacturer: OSI Optoelectronics

FCI-InGaAs-XXM InGaAs Photodiode Arrays

900 to 1700 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm, Pitch 0.25 mm; Responsivity 0.95 A/W; Capacitance 0.65 pF; Package Wraparound Ceramic Submount OSI Optoelectronics’ FCI-InGaAs-XXM series of high speed, IR sensitive InGaAs photodiode arrays are available with 4, 8, 12 and 16 channels. Each anti-reflective (AR) coated element is capable of 2.5 Gbps data rates exhibiting high responsivity from 1100 to 1620 nm. The FCI-InGaAs-XXM photodiode arrays come standard on a wraparound ceramic submount and are designed for multi-channel fiber applications based on standard 250 nm pitch fiber ribbon. Also, 0.500 mm pitch board level contacts make it easy to connect the photodiode arrays to your circuit. Upon request, 55 µm active area, two channel arrays are available. Please contact AMS Technologies for more details. Key Features: High Speed High Responsivity Low Noise Active Area Diameter 75 µm Pitch 250 µm Spectral Range 900 to 1700 nm Applications: High-speed Optical Communications; Single Mode (SM) / Multi Mode (MM) Fiber Optic Receivers; Gigabit Ethernet / Fibre Channel; SONET/SDH, ATM; Optical Taps

Product number: SW11025

Manufacturer: OSI Optoelectronics

FCI-InGaAs-XXX InGaAs Photodiodes

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.075 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 1.5 to 20 pF; Package TO-46, Fiber Receptacles FC, SC, ST, SMA Available OSI Optoelectronics’ FCI-InGaAs-XXX series of high-speed InGaAs photodiodes with active area diameters of 75, 120, 300, 400 and 500 µm exhibit the characteristics and need for datacom and telecom applications. Low capacitance, low dark current and high responsivity from 1100 to 1620 nm make these devices ideal for high bit rate receivers used in LAN, MAN, WAN and other high-speed communication systems. FCI-InGaAs-XXX photodiodes are packaged in 3-lead isolated TO-46 cans with anti-reflective (AR) coated flat windows or micro lenses to enhance coupling efficiency. FCI-InGaAs-XXX series photodiodes are also offered with FC, SC, ST and SMA receptacles. Key Features: High Speed High Responsivity Low Noise Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Single Mode (SM) / Multi Mode (MM) Fiber Optic Receivers; Gigabit Ethernet/Fibre Channel; SONET/SDH, ATM; Optical Taps

Product number: SW11034

Manufacturer: OSI Optoelectronics

FCI-InGaAs-XXX-ACER InGaAs Photodiodes

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.07 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 0.65 to 20 pF; Package Angled Ceramic Substrate OSI Optoelectronics’ FCI-InGaAs-XXX-ACER series of high-speed InGaAs photodiode on angled ceramic submount with active area diameters of 70, 120, 300, 400 and 500 µm is part of OSI Optoelectronics' high speed IR sensitive photodiode series mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5° greatly reduces the back reflection. FCI-InGaAs-XXX-ACER chips can be epoxy/eutectic mounted onto the angled ceramic substrate. Key Features: 5° Angle Ceramic Low Noise High Responsivity High Speed Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Gigabit Ethernet/Fibre Channel; SONET / SDH, ATM; Diode Laser Monitor; Instrumentation

Product number: SW11030

Manufacturer: OSI Optoelectronics

FCI-InGaAs-XXX-CCER InGaAs Photodiodes

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.07 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 0.65 to 20 pF; Package Gull Wing Ceramic Substrate With Glass Window OSI Optoelectronics’ FCI-InGaAs-XXX- CCER series of InGaAs photodiodes on ceramic submount with active area diameters of 70, 120, 300, 400 and 500 µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates with glass windows. FCI-InGaAs-XXX- CCER series devices have a glass window attached to the ceramic where fibers can be epoxy or eutectic mounted onto the ceramic substrate. These devices can be provided with custom anti-reflective (AR) coated windows. Key Features: Low Noise High Responsivity High Speed Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Gigabit Ethernet/Fibre Channel; SONET / SDH, ATM; Diode Laser Monitor; Instrumentation

Product number: SW11033

Manufacturer: OSI Optoelectronics

FCI-InGaAs-XXX-LCER InGaAs Photodiodes

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.07 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 0.65 to 20 pF; Package Gull Wing Ceramic Substrate OSI Optoelectronics’ FCI-InGaAs-XXX-LCER series of InGaAs photodiodes on ceramic submount with active area diameters of 70, 120, 300, 400 and 500 µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates. The chips can be epoxy/eutectic mounted onto the ceramic substrate. Key Features: Low Noise High Responsivity High Speed Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Gigabit Ethernet/Fibre Channel; SONET / SDH, ATM; Diode Laser Monitor; Instrumentation

Product number: SW11032

Manufacturer: OSI Optoelectronics

FCI-InGaAs-XXX-WCER InGaAs Photodiodes

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.07 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 0.65 to 20 pF; Package Ceramic Substrate OSI Optoelectronics’ FCI-InGaAs-XXX-WCER series of InGaAs photodiodes on ceramic submount with active area diameters of 70, 120, 300, 400 and 500 µm are part of a line of monitor photodiodes mounted on metalized ceramic substrates. The FCI-InGaAs-XXX-WCER compact assemblies are designed for ease of integration. The chips can be epoxy or Eutectic mounted onto the ceramic substrate. Key Features: Low Noise High Responsivity High Speed Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Gigabit Ethernet/Fibre Channel; SONET / SDH, ATM; Diode Laser Monitor; Instrumentation

Product number: SW11031

Manufacturer: OSI Optoelectronics

FCI-InGaAs-XXX-X Large Active Area InGaAs Photodiodes

900 to 1700 nm; Active Area 0.79, 1.77, 7.07 mm2; AA Dia. 1.0, 1.5, 3.0 mm; Responsivity 0.80 to 0.95 A/W; Capacitance 80 to 1800 pF; Package TO-5, TO-46 FCI-InGaAs-XXX-X series with active area diameters of 1, 1.5 and 3 mm, are part of OSI Optoelectronics' large active area IR sensitive InGaAs range of photodiodes which exhibit excellent responsivity from 1100 to 1620 nm, allowing high sensitivity to weak signals. These large active area devices are ideal for use in infrared instrumentation and monitoring applications. FCI-InGaAs-XXX-X photodiode chips are isolated in TO-46 or TO-5 packages with a broadband double-sided anti-reflective (AR) coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X large active area photodiodes come with different shunt resistance values of 5, 10, 20, 30 and 40 MΩ. Key Features: High Responsivity Large Active Area Diameter: 1, 1.5, 3 mm Low Noise Spectral Range: 900 to 1700 nm Applications: Optical Instrumentation; Power Measurement; Infrared Instrumentation, Monitoring and Sensing; Medical Devices

Product number: SW11028

Manufacturer: OSI Optoelectronics

High-performance InGaAs Avalanche Photodiodes APD

Active Area Diameter 50-200 µm; Responsivity 9.3 A/W; Capacitance 0.6-2.5 pF; NEP 15-100 fW/√Hz; Dark Current 25-70 nA; Package TO-18, Ceramic Carrier; System Bandwidth 800-2,000 MHz Excelitas’ high-performance InGaAs avalanche photodiode (APD) series C30644, C30645 and C30662 are high-speed, large-area InGaAs/lnP avalanche photodiodes. These devices provide high quantum efficiency, high responsivity and low noise in the spectral range between 1100 nm and 1700 nm. They are optimized for use at a wavelength of 1550 nm, ideally suitable for use in eye-safe laser range finding systems. These high-performance InGaAs APDs are supplied in a hermetically sealed TO-18 package, with the chip mounted close to the window to allow easy interfacing with the optical system, or on a ceramic carrier. The C30645 and C30662 series APD are also offered in the C30659 series of APD receivers with low-noise transimpedance amplifier , as well as built-in thermo-electric cooler (the LLAM series ). Other custom packages are also available on request. Applications: LiDAR; Laser Range Finder; Scanning Video Imager; Confocal Microscope; Free-space Communication; Spectrophotometers; Fluorescence Detection; Luminometer; DNA Sequencer; Particle Sizing Part Number Active Diameter Capacitance System Bandwidth Dark Current Breakdown Voltage Temperature Coefficient Typical Gain Responsivity 1550 nm NEP Package Window Download min max Material Aperture C30662EH 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz TO-18 Glass Large Datasheet C30662EH-1 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz TO-18 Glass Large Datasheet C30662EH-3 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz TO-18 Glass Small Datasheet C30662ECERH 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz Ceramic Carrier N/A N/A Datasheet C30662ECERH-1 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz Ceramic Carrier N/A N/A Datasheet C30645EH 80 µm 1.25 pF 1,000 MHz 35 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 25 fW/√Hz TO-18 Silicon Small Datasheet C30645ECERH 80 µm 1.25 pF 1,000 MHz 35 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 25 fW/√Hz Ceramic Carrier N/A N/A Datasheet C30644EH 50 µm 0.6 pF 2,000 MHz 25 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 15 fW/√Hz TO-18 - - - C30644ECERH 50 µm 0.6 pF 2,000 MHz 25 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 15 fW/√Hz Ceramic Carrier N/A N/A -

Product number: SW11550

Manufacturer: Excelitas Technologies

Hybrid Optical APD Receiver Modules

Active Area Diameter 0.08-1.1 mm; Responsivity 90- 3,000 kV/W; NEP 10-220 fW/√Hz; Package TO-8, TO-8 Flange, Custom; System Bandwidth 50, 200 MHz Excelitas’ hybrid optical APD receiver modules are comprised of a photodetector (PIN or APD) and a transimpedance amplifier in the same hermetically sealed package. Having both an amplifier and photodetector in the same package allows low-noise pickup from the surrounding environment and reduces parasitic capacitance from interconnect allowing lower-noise operation. The C30950EH is a silicon avalanche photodiode (Si APD) amplifier module with 50 MHz system bandwidth and includes Excelitas’ C30817 silicon avalanche photodiode (APD) . With a useful diameter of 0.8 mm, the C30950EH provides good response between 400 and 1100 nm and is supplied in a modified 12-lead TO-8 package. The C30950EH is the cost-effective, pin-compatible alternative to the C30659 series employing a bipolar amplifier. The C30659 series includes a silicon (Si) or InGaAs avalanche photodiode (APD) with a hybrid preamplifier, in the same hermetically sealed TO-8 package, to allow for ultra-low noise operation, and features an inverting amplifier design with an emitter follower used as an output buffer stage. The Si APDs used in these devices are the same as used in Excelitas’ C30817EH, C30902EH , C30954EH and C30956EH products , while the InGaAs APDs are used in Excelitas’ C30645EH and C30662EH products . These detectors with 50 or 200 MHz system bandwidth provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low-noise GaAs FET front end designed to operate at higher transimpedance than Excelitas’ standard C30950 Series. The C30659-UV-1 includes a UV-enhanced silicon avalanche photodiode (Si APD) providing very good response between 400 nm and 950 nm. The LLAM series of fully RoHS-compliant APD modules features an avalanche photodiode chip, thermoelectric (TE) cooler, and preamplifier, all in a single hermetically-sealed, modified 12-lead TO-66 flange package. The modules are easy to install and offer additional heat sinking. The use of a TE-cooler ensures lower noise and constant responsivity over a +5 to +40 °C ambient temperature range. The LLAM Series modules with 50 or 200 MHz system bandwidth are designed for the detection of high-speed, low-light analog signals. Applications: Laser Range Finder; Video Scanning Imagers; High-speed Analytical Instrumentation; Free-space Communication; UV-VIS-NIR Light Sensing; Distributed Temperature Sensing Part Number Detector Active Diameter Bandwidth Responsivity NEP Output Voltage Swing, 50 Ω Package Download 500 nm 900 nm 1060 nm 1550 nm C30659-UV-1 UV-Enhanced 1.1 mm 50 MHz 3,000 kV/W - - - 10 fW/√Hz 0.9 V TO-8 Datasheet C30659-900-R5BH C30902 0.5 mm 200 MHz - 400 kV/W - - 40 fW/√Hz 0.9 V TO-8 Datasheet C30659-900-R8AH C30817 0.8 mm 50 MHz - 3,000 kV/W - - 12 fW/√Hz 0.9 V TO-8 Datasheet C30659-1060-R8BH C30954 0.8 mm 200 MHz - 370 kV/W 200 kV/W - 100 fW/√Hz 0.9 V TO-8 Datasheet C30659-1060E-R8BH C30954 0.8 mm 200 MHz - 370 kV/W 200 kV/W - 100 fW/√Hz 0.9 V TO-8 Datasheet C30659-1060-3AH C30956 3 mm 50 MHz - 450 kV/W 280 kV/W - 90 fW/√Hz 0.9 V TO-8 Datasheet C30659-1550-R08BH C30645 0.08 mm 200 MHz - - - 90 kV/W 220 fW/√Hz 0.9 V TO-8 Datasheet C30659-1550E-R08BH C30645 0.08 mm 200 MHz - - - 90 kV/W 220 fW/√Hz 0.9 V TO-8 Datasheet C30659-1550-R2AH C30662 0.2 mm 50 MHz - - - 340 kV/W 130 fW/√Hz 0.9 V TO-8 Datasheet C30659-1550E-R2AH C30662 0.2 mm 50 MHz - - - 340 kV/W 130 fW/√Hz 0.9 V TO-8 Datasheet C30919E C30817 0.8 mm 40 MHz - 1,000 kV/W 250 kV/W - 20 fW/√Hz 0.7 V TO, 1 in - C30950EH C30817 0.8 mm 50 MHz - 560 kV/W 140 kV/W - 27 fW/√Hz 0.7 V TO-8 Datasheet LLAM-1550-R08BH C30645 0.08 mm 200 MHz - - - 90 kV/W 220 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-1550E-R08BH C30645 0.08 mm 200 MHz - - - 90 kV/W 220 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-1550-R2AH C30662 0.2 mm 50 MHz - - - 340 kV/W 130 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-900-R5BH C30902 0.5 mm 200 MHz - 400 kV/W - - 40 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-1550E-R2AH C30662 0.2 mm 50 MHz - - - 340 130 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-1060-R8BH C30954 0.8 mm 200 MHz - 370 kV/W 200 kV/W - 50 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-1060E-R8BH C30954 0.8 mm 200 MHz - 370 kV/W 200 kV/W - 50 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-1060-R8BH-FC C30954 0.8 mm 200 MHz - 370 kV/W 200 kV/W - 55 fW/√Hz 0.9 V TO-8 FLANGE+FC Datasheet HUV-1100BGH UV-100 2.5 mm 0.001 MHz - 130 MV/W - - 30 fW/√Hz 5 min CUSTOM - HUV-2000BH UV-215 5.4 mm 0.001 MHz - 130 MV/W - - 70 fW/√Hz 6 min CUSTOM - HeliX-902-200 C30902 0.5 mm 200 MHz - 650 kV/W - - 50 fW/√Hz 1 V CUSTOM - HeliX-954-200 C30954 0.8 mm 150 MHz - 650 kV/W 360 kV/W - 110 fW/√Hz 1 V CUSTOM -

Product number: SW11547

Manufacturer: Excelitas Technologies

InGaAs PIN Photodiodes

Active Area Diameter 0.1-5 mm; Responsivity 0.95 A/W; Capacitance 0.6-950 pF; System Bandwidth 3-3,500 MHz; Dark Current <1-25 nA; Package TO-5, TO-8, TO-18, SMT, Ceramic Carrier Excelitas’ InGaAs PIN photodiodes and detectors provide high quantum efficiency from 800 nm to 1700 nm with the peak wavelength at 1550 nm. They feature low capacitance for extended bandwidth, high shunt resistance for high sensitivity, high linearity, and uniformity within two percent across the detector active area. High-speed versions include various models of the C30617 and C30618 series with 100 µm or 350 µm active area diameter chip in TO-18 package (flat glass window or ball lens, partly with FC receptacle) or on a rectangular ceramic carrier. These high-speed InGaAs PIN photodiodes feature low capacitance for extended bandwidth as well as high resistance for high sensitivity. Large-area versions include C30619GH, various models of the C30641 series, C30642GH, C30665GH and C30723GH, with 0.5 mm to 5.0 mm active area diameter chip in TO-5, TO-8 or TO-18 package with flat glass window or flange, some models with single ode dual thermo electric (TE) cooler included in the package. These large-area InGaAs PIN photodiodes feature high responsivity, low dark current and low capacitance for fast response time. Applications: Beam Rider Receiver; Range Finding; Training & Simulation; Height of Burst; Laser Proximity Sensor; LiDAR; Telecom; Instrumentation; Photometry; Laser Power Monitoring; Fiber Optic Test Equipment; High-speed Switching; Spot Tracking; Missile Guidance; Laser Warning System

Product number: SW11556

Manufacturer: Excelitas Technologies

InGaAs Room Temperature PIN Photodiodes

Wavelength Range 1.2-2.6 µm; Active Area Diameter 0.05-5 mm; Responsivity 0.80-1.3 A/W; Dark Current 0.05-100,000 nA; Bandwidth 0.7-40 MHz New England Photoconductor’s range of room temperature indium gallium arsenide (InGaAs) PIN photodiode series comprises of standard versions (I series), suitable for typical wavelengths of 1300 nm or 1550 mm, as well as extended InGaAs PIN photodiodes (IE6 series) that can be used for wavelengths up to 2600 nm. Available in several different packaging options like bare chip, ceramic carrier, TO-5, TO-8 or TO-46 (also lensed), these detectors feature active areas with diameters ranging from 50 µm all the way to 5 mm. Custom filters, windows and packages are available on request. Part Number I-.10 I-.30 I-.50 I-1 I-2 I-3 I-5 Active Area Diameter 100 µm 300 µm 500 µm 1.0 mm 2.0 mm 3.0 mm 5.0 mm Responsivity @1300nm Min./Typ. 0.80/0.90 A/W Responsivity @1550nm Min./Typ. 0.90/0.95 A/W Dark Current Max./Typ.(Min.) 1.0/.05 nA @5 V 5.0/1.0 nA @5 V 25/5 nA @5 V 100/25 nA @5 V 200/50 nA @1 V 500/200 nA @1 V 5000 nA @0.3 V Capacitance Max./Typ.(Min.) 1.2/1.0 pF @5 V 8.0/4.0 pF @5 V 40 pF @0 V 120/80 pF @0 V 500/300 pF@0 V 1000/600 pF@0 V 1500/1000 pF@0 V Min. Bandwidth (50 Ω, -3dB) 2.0 MHz @5 V 0.7 MHz @5 V 0.20 MHz @5 V 40 MHz @5 V 5.3 MHz @0 V 4.0 MHz @0 V 1 MHz @0 V Rise/Fall Time (RL= 50 Ω) 0.1 ns @5 V 0.25 ns @5 V 0.50 ns @5 V 5.0 ns @5 V 50 ns @0V 100 ns @0V 300 ns @0V Resistance (Min./Typ.) - - - 10/50 MΩ 6/30 MΩ 2.0/8 MΩ 25/50 kΩ Typ. NEP @1550 nm 1.5 x 10-15 W/√Hz 5 x 10-15 W/√Hz 8 x 10-15 W/√Hz 0.01 W/√Hz 0.03 W/√Hz 0.05 W/√Hz 0.28 W/√Hz Linear Range (±0.2 dB) - - - 10 dBm 8 dBm Operating Temperature -40 to +85°C Reverse Voltage 25 V 20 V 3 V 2 V Reverse Current 10 mA Forward Current 10 mA Power Dissipation - - - 100 mW 50 mW Package Options Chip, Ceramic Carrier, TO-46 Hermetic, TO-46 Hermetic Lens Chip, Ceramic Carrier, TO-5 Chip, Ceramic Carrier, TO-8 Part Number IE6-.5 IE6-1 IE6-2 Active Area Diameter 500 µm 1.0 mm 2.0 mm Responsivity @2300 nm Min./Typ. 0.9/1.3 A/W Dark Current Typ./Max. 5/50 µA @0.5 V 15/75 µA @0.5 V 75/100 µA @0.5 V Capacitance 60 pF @0 V 200 pF @0 V 800 pF @0 V Shunt Resistance @10 mV 15 kΩ 3 kΩ 1 kΩ D* 5 x 1010 cm.√Hz/W NEP 1 x 10-12 W/√Hz 2 x 10-12 W/√Hz 5 x 10-12 W/√Hz Spectral Range 1.2-2.6 µm Cut-Off Frequency (@0 V, -3dB) 50 MHz 15 MHz 5 MHz Test Temperature +25°C Storage Temperature -40 to +125°C Package Options TO-46, TO-5 Key Features: Active Area Diameter: 50 µm to 5.0 mm Responsivity @1300 nm (I Series): 0.80 A/W (Min.), 0.90 A/W (Typ.) Responsivity @1550 nm (I Series): 0.90 A/W (Min.), 0.95 A/W (Typ.) Responsivity @2300 nm (IE6 Series): 0.9 A/W (Min.), 1.3 A/W (Typ.) Max. Dark Current: 0.07 nA to 5 mA (@5 V, 1 V, 0.3 V) Typ. Dark Current: 0.03 nA to 200 nA (@5 V, 1 V) Min. Bandwidth (@5V, 50 Ω, -3dB): 0.20 GHz to 40 GHz Capacitance: 0.4 pF to 2000 pF

Product number: SW11889

Manufacturer: New England Photoconductor

InGaAs TE Cooled Photodiodes

Wavelength Range 1.2-2.6 µm; Active Area Diameter 0.5-5 mm; Responsivity 0.80-1.3 A/W; Dark Current 0.03-50 nA; Capacitance 60-3500 pF New England Photoconductor’s range of thermoelectrically (TE) cooled indium gallium arsenide (InGaAs) photodiode series comprises IC1 (1-stage TE cooled, -10°C) or IC2 (2-stage TE cooled, -20°C) versions, suitable for typical wavelengths of 1300 nm or 1550 mm, as well as extended InGaAs PIN photodiodes that can be used for wavelengths up to 2600 nm: IE6C1 C1 (1-stage TE cooled, -10°C) or IE6C2 (2-stage TE cooled, -20°C). Available in several different packaging options like TO-5, TO-8, TO-37, or TO-66, these detectors feature active areas with diameters ranging from 500 µm all the way to 5 mm. Custom filters, windows and packages are available on request. Beyond its range of component-type InGaAs photodiodes, New England Photoconductor also provides the AP300-T2 TE cooled InGaAs infrared sensor in a compact (38 mm diameter x 63.5 mm length) and solid case with flexible mounting options – all that is needed is a DC power supply. Available with active sensor area diameters of 0.5 mm, 1.0 mm and 2.0 mm, the AP300-T2 is an amplified extended InGaAs sensor with a 2-stage thermo-electric cooler (TEC). A low-noise amplifier provides detector-noise limited performance up to 2.6 µm in a compact package. You need an OEM custom configuration? We are happy to help – contact us to discuss your project’s requirements. Part Number IC1-1 IC1-2 IC1-3 IC1-5 IC2-1 IC2-2 IC2-3 IC2-5 TEC Stages 1 2 Active Area Diameter 1 mm 2 mm 3 mm 5 mm 1 mm 2 mm 3 mm 5 mm Responsivity @1300nm Min./Typ. 0.80/0.90 A/W Responsivity @1550nm Min./Typ. 0.90/0.95 A/W Typ. NEP @1550 nm 5.0 x 10-15 W/√Hz 1.0 x 10-14 W/√Hz 2.0 x 10-14 W/√Hz 3.0 x 10-14 W/√Hz 3 x 10-15 W/√Hz 7 x 10-15 W/√Hz 1 x 10-14 W/√Hz 2 x 10-14 W/√Hz Dark Current @1 V Typ./Max 0.07/0.35 nA 0.3/1.5 nA 1.0/5.0 nA 2.5/12.5 nA 0.03/0.15 nA 0.15/0.75 nA 0.5/2.5 nA 1.2/6.0 nA Capacitance @1 V 150 pF 550 pF 1000 pF 3500 pF 150 pF 550 pF 1000 pF 3500 pF Cut-Off Frequency @1V 18 MHz 4 MHz 2 MHz 0.6 MHz 18 MHz 4 MHz 2 MHz 0.6 MHz Shunt Resistance 1500 MΩ 300 MΩ 100 MΩ 30 MΩ 3000 MΩ 600 MΩ 200 MΩ 60 MΩ Max. Reverse Voltage 5 V 2 V 5 V Test Temperature -10°C -20°C Storage Temperature -55 to +85°C Max. Cooler Power 1.0 V @2.0 A 2 V @1.3 A 0.8 V @1.3 A 1.9 V @1.4 A Package Options TO-5, TO-37 TO-8, TO-66 TO-5, TO-37 TO-8, TO-66 Thermistor @+25°C 1 KΩ Part Number IE6C1-.5 IE6C1-1 IE6C1-2 IE6C2-.5 IE6C2-1 IE6C2-2 TEC Stages 1 2 Active Area Diameter 0.5 mm 1 mm 2 mm 0.5 mm 1 mm 2 mm Responsivity @2300 nm Min./Typ. 0.9/1.3 A/W Dark Current @0.5 V Typ./Max. 0.5/4 nA 1.5/7.5 nA 7.5/40 nA 0.2/0.5 nA 0.8/4 nA 4/50 nA Capacitance @0 V 60 pF 200 pF 800 pF 60 pF 200 pF 800 pF Shunt Resistance @10 mV 15 kΩ 3 kΩ 1 kΩ 400 kΩ 60 kΩ 20 kΩ D* 1 x 1011 cm.√Hz/W 2 x 1011 cm.√Hz/W NEP 4 x 10-13 W/√Hz 7 x 10-13 W/√Hz 1 x 10-12 W/√Hz 3 x 10-13 W/√Hz 5 x 10-13 W/√Hz 9 x 10-13 W/√Hz Spectral Range 1.2-2.57 µm 1.2-2.55 µm Cut-Off Frequency (@0 V, -3dB) 50 MHz 15 MHz 5 MHz 50 MHz 15 MHz 5 MHz Test Temperature -10°C -20°C -20°C -20°C Storage Temperature -40 to +125°C Package Options TO-5, TO-8, TO-37, TO-66 Key Features: Active Area Diameter: 500 µm to 5.0 mm Responsivity @1300 nm (IC1, IC2 Series): 0.80 A/W (Min.), 0.90 A/W (Typ.) Responsivity @1550 nm (IC1, IC2 Series): 0.90 A/W (Min.), 0.95 A/W (Typ.) Responsivity @2300 nm (IE6C1, IE6C2 Series): 0.9 A/W (Min.), 1.3 A/W (Typ.) Max. Dark Current: 0.15 nA to 50 nA (@1 V, 0.5 V) Typ. Dark Current: 0.03 nA to 7.5 nA (@5 V, 1 V) Capacitance: 60 pF to 3500 pF (@0 V, 1 V)

Product number: SW11890

Manufacturer: New England Photoconductor

LAPD 3050 InGaAs APD Module

1000-1650 nm; Active Area Diameter 50 µm; Bandwidth 2.5 GHz; Responsivity 9 A/W; Capacitance 1 pF; Dark Current 2 nA; RL -30 dB OSI LaserDiode’s LAPD 3050 is a 50 µm InGaAs avalanche photodiode (APD) module, housed in a hermetic 3-pin coaxial package. The APD is coupled to a single mode (SM) fiber pigtail. The low-noise, overload-tolerant coaxial APD makes the LAPD 3050 InGaAs APD module ideal for OTDRs, line receivers and any other light level detection/ signal transmission application. Key Features: InGaAs Avalanche Photodiode (APD) Low Dark Current: 2 nA Typical (M = 10) High Speed: 2.5 GHz Typical Bandwidth (RL = 50 Ω, 3 < M < 10) Operational Wavelength Range: 1000 nm to 1650 nm Miniature Package Active Area Diameter: 50 µm Typical Responsivity: 9 A/W Typical (@1550 nm, M = 10) Breakdown Voltage: 50 V to 70 V (Id = 10 µA) Low Back Reflection Maximum Optical Return Loss (RL): -30 dB Capacitance: 1 pF Typical (f = 1 MHz, M > 3) Absolute Maximum Reverse Current: 2 mA RoHS Compliant Operating Temperature: -40 °C to +85 °C Dimensions: Ø5.65 mm x 13.85 mm (w/o Fiber Pigtail) Applications: OTDR Receivers; Line Receivers; Long Haul

Product number: SW11577

Manufacturer: OSI LaserDiode

LPAD PINAMP Mini-DIL Optical Receivers

1310, 1550 nm; Data Rate 4-1,024 Mb/s; Sensitivity -50—31 dBm; Responsivity 0.85, 0.9 A/W; Transfer Gain 4,000-40,000 V/W; Output Impedance 30-60 Ω With the LPAD PINAMP series, OSI LaserDiode provides a low-cost, high-performance miniature optical receiver module which integrates a high-speed, high-responsivity, low-leakage-current InGaAs photodiode with a GaAs transimpedance amplifier. LPAD series’ transimpedance amplifier incorporates automatic gain control providing high optical overload performance. The receiver package offers high reliability which satisfies Telcordia GR-468-CORE specifications. OSI LaserDiode’s LPAD PINAMP series pigtailed receivers are available with industry standard FC, LC, SC, and ST connectors. Custom connectors are also available on request. Key Features: Data Rates: 4 Mb/s, 52 Mb/s, 155 Mb/s, 622 Mb/s, 1 Gb/s High Responsivity and Low Dark Current InGaAs PIN Detector High Sensitivity @10-9 (BER): -50 to -31 dBm Overload @-5 VDC: -4, 0 dBm Transfer Gain @1310 nm: 4,000 to 40,000 V/W Output Impedance: 30 Ω to 60 Ω Wide Dynamic Range Single Supply Operation: 5 VDC (4.75 to 5.25 VDC) Hermetic Package Single Ended Differential Output (1 Gb/s only) GR-468-CORE Telcordia Qualified Operating Temperature: -40 °C to +85 °C Applications: Supervisory Channel; Long-haul Transmission Networks; Short-haul Transmission Networks; DWDM Transponders; SDH/SONET Single Mode (SM) Applications; Instrumentation and Testing; Data Communications; Gigabit Ethernet

Product number: SW11570

Manufacturer: OSI LaserDiode