FCI-InGaAs-WCER-LR InGaAs Photodiodes
Product information "FCI-InGaAs-WCER-LR InGaAs Photodiodes"
900 to 1700 nm; Active Area 0.125 mm2; AA Dimensions 0.25 x 0.5 mm; Responsivity 0.80 to 0.95 A/W; Capacitance 15 pF; Package Ceramic Substrate; Reflectance <0.6
OSI Optoelectronics’ FCI-InGaAs-WCER-LR series of InGaAs photodiodes feature a very low reflectance.
Designed for telecommunication applications, the FCI-InGaAs-WCER-LR series of InGaAs/InP photodiodes has a typical optical reflectance of less than 0.6% from 1520 to 1620 nm.
This ultra-low reflectance over the wide wavelength range was achieved by depositing a proprietary multi-layered anti-reflective (AR) coating directly onto the surface of the InGaAs/InP photodiode.
Key Features:
- Reflectance: Less Than 0.6%
- Low Noise
- High Responsivity
- High Speed
- Spectral Range: 900 to 1700 nm
Applications: Wavelength Lockers / Wavelength Monitoring; Lasers Back Facet Monitoring; DWDM; Instrumentation