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FCI-InGaAs-XXX-WCER InGaAs Photodiodes

Product information "FCI-InGaAs-XXX-WCER InGaAs Photodiodes"

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.07 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 0.65 to 20 pF; Package Ceramic Substrate

OSI Optoelectronics’ FCI-InGaAs-XXX-WCER series of InGaAs photodiodes on ceramic submount with active area diameters of 70, 120, 300, 400 and 500 µm are part of a line of monitor photodiodes mounted on metalized ceramic substrates.

The FCI-InGaAs-XXX-WCER compact assemblies are designed for ease of integration. The chips can be epoxy or Eutectic mounted onto the ceramic substrate.

Key Features:

  • Low Noise
  • High Responsivity
  • High Speed
  • Spectral Range 900 to 1700 nm


Applications: High Speed Optical Communications; Gigabit Ethernet/Fibre Channel; SONET / SDH, ATM; Diode Laser Monitor; Instrumentation

 

Manufacturer "OSI Optoelectronics"
OSI Optoelectronics is a leading provider of advanced optoelectronics and electronic assemblies. These technical elements are key to enabling critical functions such as analytics and monitoring, test and measurement, communication and tracking, and imaging in a wide variety of industries, including: Aerospace & Defense, Medical & Life Sciences, Automation & Industrial Production and Automotive & Consumer Electronics.
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