657-2350 nm; Output Power 2-14 mW; Threshold Current 12-35 mA; Slope Efficiency 0.04-0.21 W/A; Tuning Coefficient 0.003-0.02 nm/mA; SMSR 40 dB; Package Type 14-pin Butterfly, DX-1 Custom, TO-39 Eblana’s EP series of discrete mode (DM) laser diodes utilize the inherent low linewidth performance of the DM platform in comparison to typical DFB lasers, ideal for trace gas sensing and environmental monitoring in the near-infrared (NIR) and mid-infrared (NIR, MIR) wavelength domain. EP series laser diodes are available in a variety of industry standard and custom package types, as well as with wavelengths ranging from 657 to 2350 nm, suitable for sensing a broad range of chemical elements and substances: Calcium (Ca): 657 nm Oxygen (O2): 760 nm Rubidium (Rb): 780 nm Ytterbium (Yb): 1064 nm Hydrogen Fluoride (HF): 1278 nm Moisture (H2O): 1342 nm, 1392.5 nm, 1854 nm Ammonia (NH3), Acetylene (C2H2): 1512 nm Carbon Dioxide(CO2), Carbon Monoxide (CO), Hydrogen Sulfide (H2S): 1578 nm Methane (CH4): 1654 nm Hydrocarbon Compounds like Propane or Butane (CxHx): 1692 nm Hydrochloric Acid (HCl): 1742 nm Carbon Dioxide(CO2): 2004 nm, 2051 nm, 2051 nm High-power Nitrous Oxide (N2O): 2108 nm Carbon Monoxide (CO): 2327 nm Eblana can also realize DM laser diodes for any custom wavelength requirements with a proven track record of success – please contact the AMS Technologies’ laser diode experts who are committed to ensuring that our customers realize the perfect gas sensing solution to meet their technical and commercial needs – every time. Laser-based gas sensing applications require excellent tuning characteristics. Eblana’s discrete mode lasers feature mode-hop free tuning over a minimum of 2 nm. Utilizing a standard Fabry-Perot ridge waveguide process to ensure high reliability and consistency, Eblana’s discrete mode (DM) technology achieves excellent side mode suppression ratio (SMSR) and a narrow linewidth below 2 MHz. Wavelength-selective features are etched using surface-level lithography to create single mode (SM) lasers, and a multiple quantum-well epitaxial structure is grown by MOCVD or MBE. Compared with traditional DFB approaches, Eblana’s discrete mode technology is regrowth-free and the wavelength selection material-agnostic. Key Features: Excellent Spectral Purity Most Devices Tunable Over Multiple Absorption Lines Mode-hop-free Performance Threshold Current: 12 mA to 35 mA Slope Efficiency: 0.04 W/A to 0.21 W/A Output Power: 2 mW to 14 mW Tuning Coefficient: 0.003 nm/mA to 0.02 nm/mA Side Mode Suppression Ratio (SMSR): 40 dB Operating Temperature Range: -20 to +65 °C Package Types: 14-pin Butterfly, DX-1 Custom Package, TO-39 Applications: Trace Gas Sensing; Environmental Monitoring; High-sensitivity Detection; HF Measurement in Harsh Environments; High-temperature H2O Sensing; Wavelength Modulation Spectroscopy; Cavity Ringdown Spectroscopy ;Telecom; Fiber Coupling