Si Detectors and Arrays

Product Portfolio
AMS Technologies offers an exceptionally large portfolio of silicon detectors and arrays. General-purpose photodiodes are available as well as diodes with particularly high speed or fast response behaviour, variants with wavelength-enhanced sensitivity or avalanche photodiodes (APDs).

Beyond single diodes (in TO-package or in chip or SMT configuration), AMS Technologies also supplies duo- and tetra-lateral detectors as well as multi-element photodiodes and arrays. In addition to the photodiode, our detector assemblies also include filters or multiple diodes in a sandwich design.

General-purpose Silicon Photodiodes
The planar diffused silicon photodiode series in packages like TO-5, TO-8, TO-18, low-Profile, BNC or plastic are suitable for high-speed and high-sensitivity applications. Additional series of general-purpose photodiodes are available in molded plastic, SMD 1206 and hermetic TO packages, designed for applications requiring low dark current, high reliability and high sensitivity. Industry standard silicon photodiodes are available in transparent or infrared transmitting, visible-blocking molded plastic packages.

AMS Technologies also carries further series of plastic molded silicon photodiodes in a variety of shapes and sizes of photodetectors and packages, including flat and lensed side lookers as well as surface mount versions, top or back illuminated. For customer-specific designs, we supply a selection of photodiode chips, including solderable silicon photodiode chip series offering a low-cost approach to applications requiring large active area photodetectors.

High-speed / Fast-response Silicon Photodiodes
A broad range of silicon PIN photodiodes is available in a wide variety of active areas to accommodate various applications – with the PIN structure allowing high quantum efficiency and fast response for detection of photons in the 400 to 1100 nm range. A series of high-speed silicon PIN photodiodes comprises small-area devices optimized for short response time or high-bandwidth applications, while a series of fast-response silicon photodiodes has been designed for low junction capacitance.

The family of large active area and high-speed silicon PIN photodiodes features a large sensing area optimized for short-haul optical data communication applications at 850 nm, high responsivity, wide bandwidth, low dark current as well as low capacitance at 3.3 V and is designed to match the most widely used transimpedance amplifiers.

Fully depleted photodiodes achieve the lowest possible junction capacitance and may be operated at a high reverse voltage, up to the maximum allowable value, for accomplishing even faster response times.

Wavelength-enhanced Silicon Photodiodes
Some of our silicon photodiode series are enhanced for a certain wavelength range, including detectors optimized for Nd-YAG lasers at 1060 nm, ambient light sensors with a response similar to the human eye, blue-enhanced silicon planar photodiodes designed for optimum response through the visible part of the spectrum, blue-enhanced photovoltaic detector series with high sensitivity in the visible-blue region and moderate response speeds, two series of planar diffused or inversion layer devices especially designed for low-noise detection in the UV region of the electromagnetic spectrum, or detectors that are soft x-ray, far-UV-enhanced.

Segmented or Multi-Element Silicon Detectors, Arrays
AMS Technologies’ portfolio of segmented, multi-element silicon detectors and arrays include common substrate photodetectors segmented into either two or four separate active areas, multi-element silicon array photodetectors, 4 by 4 two-dimensional silicon array detectors, a multi-channel x-ray detector as well as a series of x-ray photodiode arrays. Position sensing detectors are also available, based on duo-lateral or tetra-lateral technology.

Assemblies, Sandwich Detectors
AMS Technologies carries sets of detector-filter combinations incorporating a filter with a photodiode to achieve a tailored spectral response, including dedicated combinations for a spectral response approximating that of the human eye. The series of dual sandwich detectors or two-color detectors are mostly employed for remote temperature measurements.

A series of general-purpose silicon photodiode-amplifier hybrids is available, combining a photodiode with an operational amplifier in the same package, plus a special version for 850 nm high-speed fiber optic data communication. A series of position sensing modules combines quadrant photodiode arrays with associated circuitry on a PCB to provide two difference signals and a sum signal. The series of self-contained single photon counting modules meets low-light-level detection demands. Special combinations of photodiodes and IREDs as well as custom assemblies address the requirements of electro-optical smoke detectors.

Silicon Avalanche Photodiodes (APDs)
AMS Technologies provides silicon avalanche photodiodes in broad variety of sizes, packages and configurations, including a series of high-volume, cost-effective silicon APDs, based on the internal gain mechanism for fast time response, low dark current and high sensitivity in the near infrared region, and “800 nm optimized” silicon APDs, available in hermetic metal packages. Our series of high-performance silicon avalanche photodiodes features low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. Based on our series of standard silicon APDs, customized versions are available on request.

Wavelength-enhanced Silicon Avalanche Photodiodes (APDs)
Using a double-diffused “reach-through” structure, an APD series with an enhanced 1064 nm long-wave response is available. Our series of large-area, UV-enhanced silicon avalanche photodiodes is intended for use in a wide variety of broadband low-light-level applications covering the spectral range from below 400 to beyond 700 nm.

Silicon Avalanche Photodiode (APD) Arrays and Assemblies
AMS Technologies carries a family of avalanche photodiode (APD) arrays and quadrants that provides ultra-high sensitivity at 400 to 1000 nm. The hybrid optical APD receiver modules are comprised of a photodetector and a transimpedance amplifier in the same hermetically sealed package, reducing noise pickup from the surrounding environment and parasitic capacitance from interconnect, thus allowing lower-noise operation.

Related Products
Complementing our silicon detectors and arrays, AMS Technologies also offers a broad range of additional discrete detectors and arrays based on other materials like InGaAs or PbS/PbSe that are suitable for higher wavelengths further into the infrared domain. Other discrete detectors and arrays available from AMS Technologies include devices based on materials like HgCdTe, InAs/InAsSb or GaAs, but also balanced photodetectors, integrated optical receiver modules or infrared detection modules.

For detecting or recording even larger two-dimensional arrays of pixels, have a look at our range of cameras, including CCD and CMOS cameras, IR cameras and x-ray cameras.

Guiding and focusing light onto optical detectors can be done using AMS Technologies’ broad portfolio of optics components like optical lenses, optical filters or optical windows, as well as our optical fibers.

Definition
The essential component of silicon (Si) detectors and arrays is usually a silicon photodiode – a silicon-based semiconductor light sensor. Light falling on the p-n or PIN junction within the active area of a photodiode generates an electric current due to the internal photoelectric effect (for details see Discrete Detectors and Arrays). At room temperature, silicon has a band gap of 1.12 eV between the valence band and the conduction band, so particles or photons that can create an electron/hole pair (and thus a photovoltage) in silicon must have an energy greater than 1.12 eV - which in turn corresponds to a wavelength of less than 1100 nm. The sensitivity range of silicon photodiodes is approximately between 190 and 1100 nm.

Key properties of silicon photodiodes are the size of the sensor’s active area, the spectral wavelength range, the radiometric sensitivity (photocurrent intensity per incident light power, in A/W), the wavelength with the highest sensitivity (peak wavelength), the average noise power (NEP, Noise Equivalent Power, in W/√Hz) and the maximum dark current. Silicon photodiodes are available in a wide variety of sizes, designs and packages, from hermetically sealed TO packages to plastic molded devices and SMT designs to solderable or bondable chips.

Multi-element Silicon Detectors, Arrays, PSDs
While multi-element silicon detector arrays are made of multiple, lined-up, separate photodiodes, position sensing detectors (PSDs) consist of a sensor surface that is either segmented or utilizes the lateral effect to determine the exact position at which a light beam hits the sensor.

In segmented PSDs, the common photodiode substrate is usually divided into two (one-dimensional) or four segments of equal size, separated by a gap or dead region. For correct operation, the diameter of the light beam to be measured must be larger than this gap, and the beam has to hit at least parts of all of the segments.

Lateral-effect PSDs, on the other hand, consist of a single planar diffused photodiode area without gaps or dead zones. The position of a light beam impinging anywhere on the surface of the PSD is determined by the height of the photocurrents through various contacts at the edge of the detector. Duo-lateral PSDs pass the photocurrent through two resistive layers, one on top of the photodiode and one below it. Tetra-lateral PSDs have only one resistive layer and therefore exhibit higher non-linearity as well as greater errors in position determination.

While segmented PSDs are characterized by higher accuracy under optimal boundary conditions, lateral-effect PSDs offer a wider dynamic range and are independent of the profile and intensity distribution of the light spot.

Silicon Avalanche Photodiodes (APDs)
Avalanche photodiodes (APDs) have a higher sensitivity and a higher speed compared to standard silicon diodes. In addition to the internal photoelectric effect generating a photocurrent, these components use the avalanche effect for internal amplification. Silicon APDs are suitable as detectors for extremely low-intensity radiation and even single photon counting in the visible and near-infrared domain (400 to 1100 nm).

Applications
Silicon photodiodes are used in a wide range of applications such as spectroscopy, medical imaging, laser beam alignment, analytics, surface characterization, optical position sensing or optical communication.

Alternative Terms: Silicon Optical Detector; Silicon Optical Array; Silicon Avalanche Photodiode; Si APD; Si Detector Module; Silicon PSD

1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD

Active Area Diameter 0.8-3 mm; Responsivity 25-36 A/W; Capacitance 2-10 pF; NEP 14-20 fW/√Hz; Dark Current 50, 100 nA; Package TO-5, TO-8 Excelitas’ 1064 nm long-wavelength enhanced Silicon Avalanche Photodiodes (APDs) C30954EH, C30955EH and C30956EH are made using a double-diffused “reach-through” structure. The design of these photodiodes is such that their long-wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties. The C30954EH, C30955EH and C30956EH long-wavelength enhanced APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low-noise, low-capacitance, and fast rise and fall times characteristics. To help simplify many design needs, these APDs are also available in Excelitas’ high-performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. In addition, these APDs are also available with built-in thermo-electric cooler for easier temperature control. The C30954EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 0.8 mm active area diameter in a TO-5 package. The C30955EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 1.5 mm active area diameter in a TO-5 package. The C30956EH large-area, long-wavelength enhanced silicon avalanche Photodiode (Si APD) provides a 3 mm active area diameter in a TO-8 package. Key Features: Active Area Diameter: 0.8, 1.5, 3 mm High Quantum Efficiency at 1060 nm: ≤40% Enhanced Long-wave Response: >900 nm Fast Response Time: 2 ns Wide Operating Temperature Range Low Capacitance @100 kHz: 2 to 10 pF Responsivity @1060 nm: 25 to 36 A/W Dark Current: 50, 100 nA Spectral Noise Current: 0.5 pA/√Hz NEP @1060 nm: 14 to 20 fW/√Hz Vop Range: 275 to 425 V Hermetically Sealed Packages: TO-5, TO-8 RoHS Compliant TEC Option Available Customization Available Upon Request Applications: Range Finding; LiDAR (Light Detection and Ranging); YAG Laser Detection

Product number: SW11551

Manufacturer: Excelitas Technologies

4X4D Two-dimensional Silicon Array Detectors

4x4 Array Detector; 810, 850 nm Band Optimized; Active Area 1,0, 1.96 mm2; Responsivity 0.35 to 0.4 A/W; Capacitance 35, 75 pF; Package Ceramic LCC OSI Optoelectronics’ 4X4D series comprise 4 by 4 arrays of super blue enhanced photodetectors. Two models are available: PIN-4X4D silicon array detectors feature an active area of 1.96 mm2 and a peak responsivity wavelength of 850 nm, while UDT-4X4D silicon array detectors with an active area of 1.0 mm2 show peak responsivity at 810 nm. OSI Optoelectronics’ proprietary design provides virtually complete isolation between all of the 16 elements. The standard LCC package allows easy integration into your surface mount applications. Numerous applications include ratio and scattering measurements, as well as Position Sensing. For custom packages, special electro-optic requirements, or to order these parts in die form, please contact AMS Technologies. Key Features: 4x4 Array Detector Active Area: 1.0x1.0 mm (UDT-4X4D), 1.4x1.4 mm (PIN-4X4D) Peak Responsivity Wavelength: 810 (UDT-4X4D), 850 nm (PIN-4X4D) Very Fast Response Extremely Low Cross-talk Surface Mount Design Package: Ceramic LCC Applications: Ratio and Scattering Measurements; Position Sensing

Product number: SW11021

Manufacturer: OSI Optoelectronics

A2C-16-1.57 Multi-channel X-Ray Detector

540, 930 nm Band Optimized; 16 Elements; Active Area 2.35 mm2 per Element; AA Dimensions 2.00 x 1.18 mm per Element, Pitch 1.57 mm; Rise Time 0.1 µs; Responsivity 0.31, 0.59 A/W; Capacitance 28 pF; Package Special PCB OSI Optoelectronics' A2C-16-1.57 multi-channel X-ray detector consists 16 individual elements grouped together in an array and mounted on PCB. For X-ray or gamma-ray application, these multi-channel detectors offer scintillator-mounting options: BGO, CdWO4 or CsI(TI). BGO (Bismuth Germanate) acts as an ideal absorber: it is widely accepted in high-energy detection applications. CdWO4 (Cadmium Tungstate) exhibits sufficiently high light output, helping improve spectrometry results. CsI (Cesium Iodide) is another high energy absorber, providing adequate resistance against mechanical shock and thermal stress. When coupled to scintillators, these silicon arrays map any medium or high radiation energy over to visible spectrum via scattering effect. Also, their specially designed PCB allows end-to-end connectivity. Multiple arrays can be deployed in situations that call for larger scale assembly. Key Features: Scintillator Platform 5 V Bias Channel Spacing Variety Applications: Position Sensors; Multi-channel Gamma Counting; X-ray Security Systems

Product number: SW11074

Manufacturer: OSI Optoelectronics

Ambient Light Sensors

Active Area 0.191-37.7 mm²; Radiometric Sensitivity 0.034-7 A/W; Capacitance 0.15-11 nF; Spectral Range 330-720 nm; Typ. Peak Wavelength 555, 580, 585 nm; NEP 11, 13, 53 fW/√Hz; Max. Dark Current 0.02-50 nA; Package TO-8, TO-46, T-1¾ Flat Excelitas offers ambient light sensors that provide an easy solution for applications requiring a response similar to the human eye, making them ideal when the response should only be influenced by visible light. Within this product family, we offer two types of Excelitas devices: IR-filtered silicon photodiodes and IR-filtered silicon phototransistors. These devices contribute in various applications to energy conservation in both fixed and portable devices. They are available in a number of standard packages, including surface mount for automated assembly. Applications: Interior and Exterior Light Switching (Dusk/Dawn Switch); Interior and Exterior Light Control (Dimming); Automotive Headlight Dimmer; Display Contrast Control; Energy Conservation

Product number: SW11560

Manufacturer: Excelitas Technologies

APD Silicon Avalanche Photodiodes

800 nm Band Optimized; Active Area 0.03 to 19.6 mm2; AA Dia. 0.2 to 5.0 mm; Responsivity 20 to 50 A/W; Capacitance 1.5 to 105 pF; Package TO-5, TO-8, TO-52 OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications. Optimized for the 800 nm wavelength band, the APD series is available with five different active area sizes ranging from 0.2 to 5.0 mm in diameter. Depending on active area size, the devices are supplied in TO-5, TO-8 or TO-52 packages. Key Features: High Speed Responsivity / QE High Bandwidth / Fast Response Low Noise Low Bias Voltage Hermetically Sealed TO-Packages Applications: High Speed Optical Communications; Laser Range Finders; Bar Code Readers; Optical Remote Control; Medical Equipment; High Speed Photometry

Product number: SW11018

Manufacturer: OSI Optoelectronics

APDXX-8-150 Silicon Avalanche Photodiodes

800 nm Band Optimized; Active Area 0.003 to 1.77 mm2; AA Dia. 0.2 to 1.5 mm; Responsivity 50 A/W; Capacitance 1.5 to 10 pF; Package TO-5, TO-52 OSI Optoelectronics introduces its APDXX-8-150 “800 nm optimized” silicon avalanche photodiode (APD) series, available in hermetic metal packages. Devices offer lower noise and high sensitivity over bandwidths up to 1 GHz. APDXX-8-150 devices exhibit a low temperature coefficient of 0.45 V/˚C. OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. The APDXX-8-150 series is available with different active area sizes ranging from 0.2 to 1.5 mm in diameter as well as with flat windows or ball lenses for optical fiber applications. Depending on active area size, the devices are supplied in TO-5, or TO-52 packages. Key Features: Active Area Diameters: 0.2, 0.5, 1.0, 1.5 mm Low Temperature Coefficient: 0.45 V/°C High Sensitivity Low Noise High Bandwidth Applications: Optical Fiber Communication; Laser Range Finder; High-speed Photometry

Product number: SW11047

Manufacturer: OSI Optoelectronics

Avalanche Photodiode APD Arrays & Quadrants

C30927 Series: Number of Elements 4; Photo Sensitive Diameter 1.5 mm; Responsivity 15-62 A/W; Capacitance 1 pF; NEP 9-16 fW/√Hz; Spectral Noise Current per Element 0.5 pA/√Hz Excelitas’ C30927 family of avalanche photodiode (APD) arrays and quadrants utilize the double-diffused “reach-through“ structure. This structure provides ultra-high sensitivity at 400 nm to 1000 nm. The C30927 quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight. The C30927EH-01, -02 and -03 APD arrays and quadrants are optimized for use at wavelengths of 1060, 900, and 800 nm respectively. Each device type will provide high responsivity and excellent performance when operated within about 50 nm of the specified wavelength. The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach-through” structure. The standard versions of the Excelitas C30737 silicon APD array series are available with 16 or 64 elements and provide high responsivity between 500 nm and 1000nm. The standard versions are available either in a compact surface-mount “top-looking” leadless package (C30737MA) or in a BGA type “top-looking” package (C30737GA). Both packages are ideally suited for high volume, cost-effective applications where a high gain APD is required. The leadless SMD and BGA packaged parts are RoHS-compliant and suitable for reflow soldering. The C30737MH series of LLC SMD packaged EPI APDs has the smallest footprint SMD packages. The C30737GA-02-64-90 silicon avalanche photodiode array (Si APD array) provides high responsivity between 500 nm and 1000 nm and is available in a BGA-type “top-looking” package. The C30737GA is ideally suited for high volume, cost-effective applications where a high gain APD is required. Its leadless BGA package is RoHS-compliant and suitable for reflow soldering. Key Features C30927 Series: High Quantum Efficiency Hermetically Sealed Packages Monolithic Chip With Minimal Dead Space Between Elements Specific Tailored Wavelength Response RoHS Compliant Customization Available Upon Request Applications C30927 Series: Spectroscopy; Particle Detection; Spot Tracking and Alignment Systems; Adaptive Optics; LiDAR (Light Detection and Ranging)

Product number: SW11549

Manufacturer: Excelitas Technologies

BI-SMT Back Illuminated Si Photodiodes

920 nm Band Optimized; Active Area 5.76 to 88.36 mm2; AA Dimensions 2.4 x 2.4 to 9.4 x 9.4 mm; Rise Time 10, 20 ns; Responsivity 0.30 to 0.59 A/W; Capacitance 50 to 900 pF; Package SMT OSI Optoelectronics’ BI-SMT product series are single-channel back-illuminated photodiodes specifically designed to minimize “dead” areas at the edge of the device. Each device is designed on a package with dimensions very similar to the chip itself. This design allows for multiple detectors to be arranged in a tiled format and offers ease of coupling to a scintillator. Key Features: Chip Size Package Easy Coupling to Scintillator Patterned Electrodes Applications: X-Ray Inspection; Computed Tomography; General Industrial Use

Product number: SW11059

Manufacturer: OSI Optoelectronics

Blue-enhanced Si Photodiodes

410, 436 nm Band Optimized; Active Area 0.81 to 200 mm2; AA Dia. 1.02 to 11.3 mm Round, 1.0 x 1.0 to 10 x 20 mm Rect.; Rise Time 0.02 to 45 µs; Responsivity 0.15 to 0.21 A/W; Capacitance 35 to 17,000 pF; Package TO-5, TO-8, TO-18, BNC, Metal, Plastic, Special OSI Optoelectronics’ blue-enhanced photovoltaic detector series is utilized for applications requiring high sensitivity in the visible-blue region and moderate response speeds. These detectors provide additional sensitivity in the 350 to 550 nm region when compared to the regular photovoltaic devices. For visible and near IR applications i.e. spectral response ranges from 350 to 1100 nm, regular photovoltaic devices can be considered. These detectors feature high shunt resistance and low noise and exhibit long term stability. Unbiased operation of these detectors offers stability under wide temperature variations in DC or low-speed applications. For high light levels (>10mW/cm2), the photoconductive series detectors should be considered for better linearity. These blue-enhanced photovoltaic detectors are not designed to be reverse biased! Very slight improvement in response time may be obtained with a slight bias. Applying a reverse bias of more than a few volts (>3 V) will permanently damage the detectors. If faster response times are required, the photoconductive series should be considered. Please refer to the photovoltaic mode (PV) paragraph in the application note “Photodiode Characteristics and Applications” available under “Downloads” for detailed information on electronics set up. Key Features: Blue Enhanced High Speed Response Low Capacitance Low Dark Current Wide Dynamic Range High Responsivity Ultra Low Noise High Shunt Resistance Applications: Pulse Detectors; Optical Communications; Bar Code Readers; Optical Remote Control; Medical Equipment; High-speed Photometry; Colorimeters; Spectroscopy Equipment; Fluorescence

Product number: SW11055

Manufacturer: OSI Optoelectronics

BPW-34 Plastic Molded Si Photodiodes

970 nm Band Optimized; Active Area 7.25 mm2; AA Dimensions 2.69 x 2.69 mm; Rise Time 20 ns; Responsivity 0.15 to 0.60 A/W; Capacitance 12 to 65 pF; Package Plastic Molded OSI Optoelectronics’ BPW-34 series are a family of high quality and reliability plastic encapsulated silicon photodiodes. The devices in this series exhibit similar electrical characteristics, but vary in optical response. BPW-34B has an excellent response in the blue region of the spectrum. BPW-34 series of plastic molded silicon photodiodes are excellent for mounting on PCB and hand-held devices in harsh environments. Key Features: High Reliability High Density Package Rugged Resin Mold High Speed Low Dark Current Applications: IR Sensors; Bar Code Scanners; Color Analysis; Smoke Detectors

Product number: SW11051

Manufacturer: OSI Optoelectronics

Detector-Filter Combinations

550 nm Band Optimized; Active Area 5.7, 100 mm2; AA Dia. 11.28 mm Round, 2.4 x 2.4 mm Square; Rise Time 0.1 to 1.0 µs; Responsivity 0.025 to 0.27 A/W; Capacitance 100 to 1,500 pF; Package TO-5, BNC, Special OSI Optoelectronics’ detector-filter combination series incorporates a filter with a photodiode to achieve a tailored spectral response. OSI Optoelectronics offers a multitude of standard and custom combinations. Upon request, all detector-filter combinations can be provided with NIST-traceable calibration data specified in terms of A/W, A/lm, A/lux or A/fc. Among many possible custom combinations, following are a few detector-filter combinations available as standard parts: PIN-10AP is a 1 cm2 active area, BNC package detector-filter combination which duplicates the response of the most commonly available optical aid, the human eye. The eye senses both brightness and color, with response varying as a function of the wavelength. This response curve is commonly known as the CIE curve. The AP filters accurately match the CIE curve to within 4% of the area. PIN-555AP has the same optical characteristics as the PIN10-AP, with an additional operational amplifier in the same package. The package and the operational amplifier combination is identical to UDT-555D detector-amplifier combination (Photop™). PIN-005E-550F uses a low cost broad-bandpass filter with peak transmission at 550 nm to mimic the CIE curve for photometric applications. The pass band is similar to the CIE curve, but the actual slope of the spectral response curve is quite different. This device can also be used to block the near IR portion of the spectral range, 700 nm and above. PIN-005D-254F is a 6 mm2 active area, UV-enhanced photodiode-filter combination which utilizes a narrow bandpass filter peaking at 254 nm. Key Features: CIE Match (AP Models) Flat Band Response (DF Models) Narrow Bandpass Version Available (254 Models) Hybrid Version With Amplifier Available (PIN-555AP) BNC Packages Available Applications: Analytical Chemistry; Spectrophotometry; Densitometers; Photometry/Radiometry; Medical Instrumentation; Liquid Chromatography

Product number: SW11056

Manufacturer: OSI Optoelectronics

Duo-lateral Position Sensing Detectors

OSI Optoelectronics’ super linear duo-lateral position sensing detectors (PSDs) feature state of the art duo-lateral technology to provide a continuous analog output proportional to the displacement of the centroid of a light spot from the center, on the active area. As continuous position sensors, these detectors are unparalleled, offering position accuracies of 99% over 64% of the sensing area. These accuracies are achieved by duo-lateral technology, manufacturing the detectors with two separate resistive layers, one located on the top and the other at the bottom of the chip. One- or two-dimensional position measurements can be obtained using these sensors. A reverse bias should be applied to these detectors to achieve optimum current linearity at high light levels. The maximum recommended power density incident on the duo-lateral PSDs is 1 mW/cm2. For optimum performance, the incident beam should be perpendicular to the active area, with a spot diameter of less than 1 mm. Key Features: Duo Lateral Structure One-dimensional (SL Variants) and Two-dimensional (DL, DLS Variants) Versions High Speed Response Super Linear Ultra High Position Accuracy: Up to 99% Low Capacitance Low Dark Current Wide Dynamic Range High Reliability Metal or Ceramic Package Applications: Pulse Detectors; Optical Communications; Bar Code Readers; Optical Remote Control; Medical Equipment; High-speed Photometry; Beam Alignment; Position Sensing; Angle Measurement; Surface Profiling; Height Measurements; Targeting; Guidance Systems; Motion Analysis

Product number: SW11037

Manufacturer: OSI Optoelectronics

EOAPD Silicon Avalanche Photodiodes APD

800, 905 nm; Active Area Diameter 230, 500 µm; Responsivity 50, 55 A/W Typ.; Capacitance 1-3 pF Typ.; Package TO-46 Metal Can, LCC3 SMD, LCC6 SMD EPIGAP Optronic’s EOAPD series of silicon avalanche photodiodes (APD) provide an internal gain mechanism, fast time response, low dark current and high sensitivity in the near infrared region. These APDs are recommended for applications that require high bandwidth, or where internal gain is needed to overcome high pre-amp noise. In addition, they provide higher sensitivity than standard photodiodes like EPIGAP Optronic’s EOPD series and are ideal for extreme low-level light detection and short pulse detection. Silicon avalanche photodiodes (Si APDs) are the preferred optical detectors for applications with wavelengths between 400 nm and 1100 nm. Standard versions are available in active area sizes with a diameter of 230 µm and 500 µm and are offered in hermetic TO cans and LCC packages. These detectors have become the semiconductor equivalent of photomultipliers in many applications including data communication, LIDAR, instrumentation and photon counting. Key Features: Product Peak Wavelength Active Area Package Downloads EOAPD-800-0-04 800 nm Ø 230 µm TO-46 Metal Can Datasheet EOAPD-800-0-08 800 nm Ø 500 µm TO-46 Metal Can Datasheet EOAPD-800-1-01 800 nm Ø 230 µm LCC3 SMD Datasheet EOAPD-800-1-05 800 nm Ø 500 µm LCC3 SMD Datasheet EOAPD-800-1-07 800 nm Ø 500 µm LCC6 SMD Datasheet EOAPD-905-0-12 905 nm Ø 230 µm TO-46 Metal Can Datasheet EOAPD-905-0-16 905 nm Ø 500 µm TO-46 Metal Can Datasheet EOAPD-905-1-09 905 nm Ø 230 µm LCC3 SMD Datasheet EOAPD-905-1-13 905 nm Ø 500 µm LCC3 SMD Datasheet EOAPD-905-1-15 905 nm Ø 500 µm LCC6 SMD Datasheet Applications: Data Communication; LIDAR; Instrumentation; Photon Counting; Optical Range Finders; High-speed Optical Communications; Medical Equipment; Barcode Readers

Product number: SW11569

Manufacturer: EPIGAP Optronic

EOPC Photodiode Chips

525-1300 nm; Visible, IR; Active Area 0.071-2.32 mm²; Responsivity 0.08-1 A/W; Dark Current 0.005-20 nA A selection of photodiode chips with sensitivities in the visible and infrared spectral range is available for customer-specific designs. Low dark current, reliability and high sensitivity are the advantages of these products. The EOPC series includes GaP, Si, InGaAs and AlGaAs photodiode chips. For more standard applications, EPIGAP Optronic’s photodiode components are also available housed in molded plastic, hermetic TO and SMD packages (EOPD series) with high degradation stability and good matching with LEDS. The supplier’s diversity of chips in terms of wavelength, chip size and polarity allows the selection and adaptation to the specificity of the application. Please contact the AMS Technologies photodiode experts to find the right solution that meets your design project’s requirements. We would like to support you and look forward to your inquiries! Key Features: Product Max. Sensitivity Package Active Area Responsivity Dark Current Downloads EOPC-525-0.86 525 nm 0.57 mm2 0.08 A/W 5 pA Datasheet EOPC-880-0.9-1 880 nm 0.72 mm2 0.25 A/W 1 nA Datasheet EOPC-940-1.5 940 nm 2.32 mm2 0.6 A/W 8 nA Datasheet EOPC-940-0.1 940 nm 0.1 mm2 0.6 A/W 0.05 nA Datasheet EOPC-1300-0.3 1300 nm 0.071 mm2 1 A/W 0.3 nA Datasheet EOPC-1300-1.0 1300 nm 0.785 mm2 0.95 A/W 20 nA Datasheet Applications: Optical Communications; Safety Equipment; Light Barriers; Colorimeters; Currency Authentication; Spectroscopy Equipment; Fluorescence; Optical Power Monitor PD

Product number: SW11568

Manufacturer: EPIGAP Optronic

EOPD Molded Plastic, Hermetic TO and SMD Photodiodes

265-1300 nm; UV, Visible, IR; Active Area 0.1-15 mm²; Responsivity 0.18-0.9 A/W; Dark Current 0.00001-2,000 nA; Package 5 mm Molded Plastic, TO-5, TO-46, TO-52, SMD 1206 EPIGAP offers a wide range of photodiodes in the ultraviolet (UV), visible (VIS) and infrared (IR) spectral range. The EOPD series includes GaP photodiodes, Si and SiC photodiodes as well as InGaAs and AlGaAs photodiodes. Available in 5 mm molded plastic, SMD 1206 and hermetic TO packages (TO-5, TO-46 and TO-52), the EOPD series photodiodes are designed for applications requiring low dark current, high reliability and high sensitivity. Further advantages of the EOPD series photodiodes are degradation stability, good matching with LEDs, no stray light problems and optional miniaturization. The range of standard products is supplemented by specialties with larger active sensor surfaces or extended sensitivity from 150 nm (low UV) up to 2600 nm in the higher infrared range. For customer-specific designs, EPIGAP Optronic’s photodiode components are also available as bare photodiode chips (EOPC series) with high sensitivity and low dark current. Please contact the AMS Technologies photodiode experts to find the right solution that meets your design project’s requirements. We would like to support you and look forward to your inquiries! Key Features: Product Max. Sensitivity Package Active Area Responsivity Dark Current Downloads EOPD-280-0-0.3-1 265 nm TO-52 0.1 mm2 0.18 A/W 10 fA Datasheet EOPD-525-1-0.9-1 525 nm SMD 1206 0.73 mm2 0.3 A/W 5 pA Datasheet EOPD-525-1-0.9-2 525 nm SMD 1206 0.73 mm2 0.3 A/W 5 pA Datasheet EOPD-940-0-2.52 940 nm TO-5 5 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-3.57 940 nm TO-5 10 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-15 940 nm TO-5 15 mm2 0.6 A/W 1 nA Datasheet EOPD-940-0-5.8Q 940 nm TO-5 4 x 1.44 mm2 0.6 A/W 0.5 nA Datasheet EOPD-1300-0-0.1-1 1300 nm TO-46 0.1 mm2 0.8 A/W 1 µA Datasheet EOPD-1300-0-0.8-1 1300 nm TO-46 0.8 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-0-1.0-1 1300 nm TO-46 1 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-0-1.5-3 1300 nm TO-46 1.5 mm2 0.8 A/W 2 µA Datasheet EOPD-1300-1-0.3 1300 nm SMD 1206 0.3 mm2 0.8 A/W 0.3 nA Datasheet EOPD-1300-5-0.3 1300 nm 5 mm 0.3 mm2 0.9 A/W 15 pA Datasheet EOPD-1300-0-0.3-1 1300 nm TO-46 0.3 mm2 0.8 A/W 1 µA Datasheet Applications: Universal measurements in the UV, VIS and IR Range; Sterilization Lamp Monitoring; Flame Monitoring; Alarm Systems; Light Barriers; Daylight Sensors; Nearly Vλ-matched Detectors; Colorimeters; Photometers; Spectroscopy Equipment; Fluorescence; Beam Centering; Optical Encoders; High-speed Optical Communications; Optical LAN; Optical Switches; Ethernet Fiber Channel; Safety Equipment; Light Barriers

Product number: SW11567

Manufacturer: EPIGAP Optronic

FCI-125G Large Active Area and High-speed Silicon Photodiodes

850 nm Band Optimized; Active Area 0.018 to 0.126 mm2; AA Dia. 0.150 to 0.400 mm; Responsivity 0.36 A/W; Rise Time 35 to 100 ps; Capacitance 0.65 to 1.73 pF; Package TO-46; Fiber Receptacles FC, ST, SC, SMA Available 800nm band optimized Silicon APD, 0.2mm dia AA Si APD in TO can package with Lens Avalanche Photodiode Active Area Size: Diameter 5.0 mm Optimal Spectral Band: 630 nm Breakdown Voltage: 150- Low Voltage Operation Package Style: TO-8 style Name (Si Detector/Array); Model; Wavelength range; Detector size; Risetime; Freq. response; Capacitance; Additional information OSI Optoelectronics' FCI-125G family of large active area and high-speed silicon PIN photodiodes possesses a large sensing area optimized for short-haul optical data communication applications at 850 nm. The photodetectors exhibit high responsivity, wide bandwidth, low dark current and low capacitance at 3.3 V. They are designed to match the most widely used transimpedance amplifiers. The photodiodes can be used in all 850 nm transceivers and GBICs up to 1.25 Gbps applications such as Gigabit Ethernet and Fibre Channel. The chip is isolated in a 3-pin TO-46 package with options of micro lens cap or an AR coated flat window. They are also available in standard fiber receptacles such as FC, ST, SC and SMA. For availability in chip form please contact AMS Technologies. Key Features: Silicon Photodiodes High Responsivity Large Diameter Sensing Area Low Capacitance @ 3.3V Bias Applications: High-speed Optical Communications; Single Mode/Multi Mode Fiber Optic Receivers; Gigabit Ethernet/Fibre Channel; SONET/SDH, ATM

Product number: SW11020

Manufacturer: OSI Optoelectronics

FCI-H125G-10 Si Photodiode-Amplifier Hybrid

850 nm Band Optimized; Active Area 0.05 mm2; AA Dia. 0.25 mm; Responsivity 3,000 V/W; Transimpedance 8,300 Ω; Package TO-46 OSI Optoelectronics’ silicon photodiode-amplifier hybrid FCI-H125G-10 combines a low noise, high bandwidth photodetector with a transimpedance amplifier designed for short wavelength (850nm) high speed fiber optic data communications. The FCI-H125G-10 hybrid incorporates a high sensitivity silicon photodetector with a sensing area of 250 µm in diameter. It also includes a high gain transimpedance amplifier producing a differential output voltage for latching to post amplifiers used in electro-optical receivers and transceivers for Gigabit Ethernet and Fiber Channel applications up to 1.25 Gbps over multi mode fiber. The photodetector converts the light into an electrical signal while the output voltage increases with light in/out. This is achieved by a single +3.3 to +5 V positive power supply. The FCI-H125G-10 hybrid is available in 4-pin TO-46 metal packages with either a double-sided anti-reflective coated window cap or an integrated lens cap. The 250 µm diameter sensing area eases fiber alignment for connectorizing or receptacle attachment. Furthermore, the proximity of the transimpedance amplifier to the photodetector lowers the capacitance associated with long traces, therefore allowing higher bandwidth and sensitivity. Key Features: Silicon Photodetector / Low-noise Transimpedance Amplifier Hybrid Large Active Area of 250 µm Dia. High Bandwidth / Wide Dynamic Range Automatic Gain Control (AGC) Hermetically Sealed TO-46 Can Single +3.3 to +5 V Power Supply Differential Output Applications: High Speed Optical Communications; Gigabit Ethernet; Fibre Channel

Product number: SW11022

Manufacturer: OSI Optoelectronics

Fully Depleted Si Photodiodes

350 to 1100 nm; Active Area 7.1 to 100 mm2; AA Dia. 3.00, 4.35 mm Round, 5.8 x 5.9, 10 x 10 mm Square; Rise Time 1.5 to 40 ns; Responsivity 0.54 to 0.60 A/W; Capacitance 8.0 to 1,300 pF; Package TO-8, Ceramic OSI Optoelectronics' large active area high-speed detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in nano seconds. The high reverse bias at this point increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for high responsivity as well as active area. These large active area radiation detectors can also be fully depleted for applications measuring high-energy X-rays, ɣ-rays as well as high-energy particles such as electrons, alpha rays and heavy ions. These types of radiation can be measured with two different methods: indirect and direct. With the indirect high-energy radiation measurement method, the detectors are coupled to a scintillator crystal for converting high-energy radiation into a detectable visible wavelength. The devices are mounted on a ceramic and covered with a clear layer of an epoxy resin for an excellent optical coupling to the scintillator. This method is widely used in detection of high-energy gamma rays and electrons. This is where the XUV-XXX(C) series devices fail to measure energies higher than 17.6 keV. The type and size of the scintillator can be selected based on radiation type and magnitude. For direct measurement of high-energy radiation such as alpha rays and heavy ions, both PIN-RD100 and PIN-RD100A devices can also be used without any epoxy resin or glass window. The radiation exhibits loss of energy along a linear line deep into the silicon after incident on the active area. In addition to their use in high-energy particle detection, the PIN-RD100 and PIN-RD100A are also excellent choices for detection in the range between 350 to 1100 nm in applications where a large active area and high speed is desired. These detectors can be coupled to a charge-sensitive preamplifier or low-noise op-amp as shown in the data sheet, where the configuration for indirect measurement is also shown with a scintillator crystal. Key Features: Large Active Area Fully Depletable Fast Response Ultra-low Dark Current Low Capacitance High Breakdown Voltage Scintillator Mountable Applications: Laser Applications; Control Systems; Electron Detection; High-energy Physics; Medical Instrumentation; High Energy Spectroscopy; Charged Particle Detection; Nuclear Physics

Product number: SW11073

Manufacturer: OSI Optoelectronics

High-performance Silicon Avalanche Photodiodes APD

Active Area Diameter 0.5 to 1.5 mm; Responsivity 8 to 128 A/W; Capacitance 1.6 to 4 pF; Package TO-5, TO-8 Flange, TO-18 Exelitas‘ series of high-performance, rear-entry, “reach-through” silicon avalanche photodiodes (APDs) offer the best compromise in terms of cost and performance for applications requiring high-speed and low-noise photon detection from 400 nm up to 1100 nm. These Silicon APDs feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. The active area varies from 0.5 mm to 1.5 mm. C30817EH: This silicon avalanche photodiode for general-purpose applications is designed using a double-diffused “reach through” structure. This structure provides high responsivity between 400 to 1100 nm, as well as fast rise and fall times at all wavelengths. Since the fall time characteristics has no “tail”, the responsivity of the device is independent of modulation frequency up to about 200 MHz. C30884EH: This silicon avalanche photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz. This Si APD is made using a double-diffused “reach-through” structure and is optimized for high responsivity at wavelengths of below 1000 nm. C30902BH: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active area diameter. Suitable for biomedical and analytical applications, this Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. C30902EH: This high-performance silicon avalanche photodiode (APD) has an active area diameter of 0.5 mm and is suitable for biomedical and analytical applications. This Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths. C30902EH-2: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active diameter and a 905 nm bandpass filter in a TO-18 housing. This Si APD is suitable for biomedical and analytical applications. C30902SH: Selected high-performance silicon avalanche photodiodes with extremely low noise and bulk dark current. Suitable for biomedical and analytical applications, this Si APD provides 0.5 mm active diameter in TO-18 housing. C30902SH-2: High-performance, low-noise, selected silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in a TO-18 housing with an inline 905 nm bandpass filter. C30902SH-TC: High-performance, low-noise, selected, single-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing. C30902SH-DTC: High-performance, low-noise, selected, double-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing. C30916EH: Large-area silicon avalanche photodiode with 1.5 mm active area diameter in TO-5 housing. Part Number Active Diameter Capacitance Rise/Fall Time Dark Current Breakdown Voltage min Breakdown Voltage max Temperature Coefficient Typical Gain Responsivity NEP Package 830 nm 900 nm 1060 nm Unit mm pF ns nA V V V/°C A/W A/W A/W fW/√Hz C30817EH 0.8 2 2 50 300 475 2.2 120 - 75 - 13 TO-5 C30884E 0.8 4 1 100 190 290 1.1 100 - 63 8 13 TO-5 C30902BH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 Ball lens TO-18 C30902EH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, flat window C30902EH-2 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, built-in 905 nm filter C30902SH 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, flat window C30902SH-2 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, built-in 905 nm filter C30902SH-TC 0.5 1.6 0.5 2 225 - 0.7 250 128 108 - 0.04 pA/√Hz TO-8 flange C30902SH-DTC 0.5 1.6 0.5 1 225 - 0.7 250 128 108 - 0.02 pA/√Hz TO-8 flange C30916EH 1.5 3 3 100 315 490 2.2 80 - 50 12 20 TO-5 Applications: LIDAR; Laser Detection; Range Finding; Small-signal Fluorescence; Photon Counting; Bar Code Scanning; Optical Communications; High-speed Switching Systems; Transit-time Measurements; Biomedical and Analytical Applications; Confocal Microscopes; Spectrophotometers; Luminometers; DNA Sequencers, Particle Sizing

Product number: SW11514

Manufacturer: Excelitas Technologies

High-volume Silicon Avalanche Photodiodes APD

Active Area Diameter 230-500 µm; Responsivity 8.5-60 A/W; Capacitance 0.1-2.0 pF; Noise Current 0.1 pA/√Hz; Package TO, T-1¾, LCC Excelitas’ C30737 series of high-volume, cost-effective silicon avalanche photodiodes (APDs) provide high responsivity between 500 nm and 1000 nm as well as extremely fast rise times at all wavelengths, with a frequency response above 1 GHz for bandwidth-optimized versions. Standard versions of the C30737 series APDs are available in three active area sizes: 0.23, 0.3 and 0.5 mm diameter. They are offered in the traditional hermetic TO housing (“E”), in cost-effective plastic through-hole T-1¾ (TO-like, “P”) packages, in leadless ceramic carrier (LCC, “L”) top-looking package and laminated leadless ceramic (LLC, “C”) side-looking package and in a compact surface-mount “top-looking” leadless package (C30737MH). Enhanced response is available at 635, 800 or 900 nm, some devices include 635, 650 or 905 nm optical bandpass filters. All listed varieties are ideally suited for high-volume, low-cost applications. Customization of these APDs is offered to meet your design challenges. Operating voltage selection and binning or specific wavelength filtering options are among many of the application-specific solutions available. Please inquire about the availability of arrays based on the C30737 product family to enable your next generation LiDAR systems. As low-gain APDs with low temperature coefficient, Excelitas’ C30724 series devices can be operated at a fixed voltage without the need for temperature compensation. C30724 APDs provide high responsivity in the wavelength range of 800 to 950 nm and are designed to meet the needs of high-volume and low-cost applications. The C30724EH is in a hermetically-sealed TO-18 can. The C30724EH-2 is a modified TO-18 with a built-in 905 nm narrow band pass filter. Lastly, the C30724PH is in a TO-18 plastic encapsulated package. Applications: LiDAR; Laser Range Finding for 600 to 950 nm Range; Optical Communication; Analytical Instrumentation

Product number: SW11548

Manufacturer: Excelitas Technologies

Hybrid Optical APD Receiver Modules

Active Area Diameter 0.08-1.1 mm; Responsivity 90- 3,000 kV/W; NEP 10-220 fW/√Hz; Package TO-8, TO-8 Flange, Custom; System Bandwidth 50, 200 MHz Excelitas’ hybrid optical APD receiver modules are comprised of a photodetector (PIN or APD) and a transimpedance amplifier in the same hermetically sealed package. Having both an amplifier and photodetector in the same package allows low-noise pickup from the surrounding environment and reduces parasitic capacitance from interconnect allowing lower-noise operation. The C30950EH is a silicon avalanche photodiode (Si APD) amplifier module with 50 MHz system bandwidth and includes Excelitas’ C30817 silicon avalanche photodiode (APD) . With a useful diameter of 0.8 mm, the C30950EH provides good response between 400 and 1100 nm and is supplied in a modified 12-lead TO-8 package. The C30950EH is the cost-effective, pin-compatible alternative to the C30659 series employing a bipolar amplifier. The C30659 series includes a silicon (Si) or InGaAs avalanche photodiode (APD) with a hybrid preamplifier, in the same hermetically sealed TO-8 package, to allow for ultra-low noise operation, and features an inverting amplifier design with an emitter follower used as an output buffer stage. The Si APDs used in these devices are the same as used in Excelitas’ C30817EH, C30902EH , C30954EH and C30956EH products , while the InGaAs APDs are used in Excelitas’ C30645EH and C30662EH products . These detectors with 50 or 200 MHz system bandwidth provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low-noise GaAs FET front end designed to operate at higher transimpedance than Excelitas’ standard C30950 Series. The C30659-UV-1 includes a UV-enhanced silicon avalanche photodiode (Si APD) providing very good response between 400 nm and 950 nm. The LLAM series of fully RoHS-compliant APD modules features an avalanche photodiode chip, thermoelectric (TE) cooler, and preamplifier, all in a single hermetically-sealed, modified 12-lead TO-66 flange package. The modules are easy to install and offer additional heat sinking. The use of a TE-cooler ensures lower noise and constant responsivity over a +5 to +40 °C ambient temperature range. The LLAM Series modules with 50 or 200 MHz system bandwidth are designed for the detection of high-speed, low-light analog signals. Applications: Laser Range Finder; Video Scanning Imagers; High-speed Analytical Instrumentation; Free-space Communication; UV-VIS-NIR Light Sensing; Distributed Temperature Sensing Part Number Detector Active Diameter Bandwidth Responsivity NEP Output Voltage Swing, 50 Ω Package Download 500 nm 900 nm 1060 nm 1550 nm C30659-UV-1 UV-Enhanced 1.1 mm 50 MHz 3,000 kV/W - - - 10 fW/√Hz 0.9 V TO-8 Datasheet C30659-900-R5BH C30902 0.5 mm 200 MHz - 400 kV/W - - 40 fW/√Hz 0.9 V TO-8 Datasheet C30659-900-R8AH C30817 0.8 mm 50 MHz - 3,000 kV/W - - 12 fW/√Hz 0.9 V TO-8 Datasheet C30659-1060-R8BH C30954 0.8 mm 200 MHz - 370 kV/W 200 kV/W - 100 fW/√Hz 0.9 V TO-8 Datasheet C30659-1060E-R8BH C30954 0.8 mm 200 MHz - 370 kV/W 200 kV/W - 100 fW/√Hz 0.9 V TO-8 Datasheet C30659-1060-3AH C30956 3 mm 50 MHz - 450 kV/W 280 kV/W - 90 fW/√Hz 0.9 V TO-8 Datasheet C30659-1550-R08BH C30645 0.08 mm 200 MHz - - - 90 kV/W 220 fW/√Hz 0.9 V TO-8 Datasheet C30659-1550E-R08BH C30645 0.08 mm 200 MHz - - - 90 kV/W 220 fW/√Hz 0.9 V TO-8 Datasheet C30659-1550-R2AH C30662 0.2 mm 50 MHz - - - 340 kV/W 130 fW/√Hz 0.9 V TO-8 Datasheet C30659-1550E-R2AH C30662 0.2 mm 50 MHz - - - 340 kV/W 130 fW/√Hz 0.9 V TO-8 Datasheet C30919E C30817 0.8 mm 40 MHz - 1,000 kV/W 250 kV/W - 20 fW/√Hz 0.7 V TO, 1 in - C30950EH C30817 0.8 mm 50 MHz - 560 kV/W 140 kV/W - 27 fW/√Hz 0.7 V TO-8 Datasheet LLAM-1550-R08BH C30645 0.08 mm 200 MHz - - - 90 kV/W 220 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-1550E-R08BH C30645 0.08 mm 200 MHz - - - 90 kV/W 220 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-1550-R2AH C30662 0.2 mm 50 MHz - - - 340 kV/W 130 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-900-R5BH C30902 0.5 mm 200 MHz - 400 kV/W - - 40 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-1550E-R2AH C30662 0.2 mm 50 MHz - - - 340 130 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-1060-R8BH C30954 0.8 mm 200 MHz - 370 kV/W 200 kV/W - 50 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-1060E-R8BH C30954 0.8 mm 200 MHz - 370 kV/W 200 kV/W - 50 fW/√Hz 0.9 V TO-8 FLANGE Datasheet LLAM-1060-R8BH-FC C30954 0.8 mm 200 MHz - 370 kV/W 200 kV/W - 55 fW/√Hz 0.9 V TO-8 FLANGE+FC Datasheet HUV-1100BGH UV-100 2.5 mm 0.001 MHz - 130 MV/W - - 30 fW/√Hz 5 min CUSTOM - HUV-2000BH UV-215 5.4 mm 0.001 MHz - 130 MV/W - - 70 fW/√Hz 6 min CUSTOM - HeliX-902-200 C30902 0.5 mm 200 MHz - 650 kV/W - - 50 fW/√Hz 1 V CUSTOM - HeliX-954-200 C30954 0.8 mm 150 MHz - 650 kV/W 360 kV/W - 110 fW/√Hz 1 V CUSTOM -

Product number: SW11547

Manufacturer: Excelitas Technologies

Large-area UV-enhanced Silicon Avalanche Photodiodes APD

Active Area 5x5-10x10 mm; Responsivity 16-52 A/W; Capacitance 30-100 pF; Package Square Flat Pack; Response Time 2, 5 ns Excelitas’ series of large-area, UV-enhanced silicon avalanche photodiodes (Si APDs) are intended for use in a wide variety of broadband low-light-level applications covering the spectral range from below 400 to over 700 nm. These low-noise, low-capacitance and high-gain Si APDs are packaged in a square flat pack with or without windows or on ceramics. The no-window devices can detect direct radiation of X-rays and electrons at the energies listed, and the windowed packages are best for easy scintillator coupling. The C30739ECERH and C30739ECERH-2 short-wavelength, enhanced silicon avalanche photodiode (Si APD) cover the spectral range from less than 400 nm to greater than 700 nm. With low noise, high gain, low capacitance and an enhanced UV-response with a quantum efficiency above 70% at 430 nm, these Si APDs are designed for low-light-level applications such as molecular imaging. Their ceramic carrier package allows for easy handling and coupling to scintillation crystals such as LSO and BGO. The C30703FH and C30703FH-200 series of silicon avalanche photodiodes (Si APD) with dimensions of 10 x 10 mm are designed for extremely large areas and offered in a flat-pack package suitable for radiation detection. This series is enhanced for blue-wavelength response and has a peak quantum efficiency at ~ 530 nm. The large area C30626FH series silicon avalanche photodiodes (Si APD) with dimensions of 4.7 x 4.7 mm use a standard reach-through structure, have peak detection at about 900 nm, and are offered in a flat-pack package for either direct detection or easy coupling to scintillator crystals. Applications: Nuclear Medicine; Fluorescence Detection; High-energy Physics; Medical Imaging; Radiation Detection; Particle Physics; Instrumentation; Environmental Monitoring Part Number Photo Sensitive Diameter Responsivity Dark Current Spectral Noise Current Capacitance @ 100 kHz Response Time NEP Vop Range Download C30739ECERH 5.6 x 5.6 mm 20 A/W (@430 nm) 10 nA 1.4 pA/√Hz 60 pF 2 ns - 275-425 V Datasheet C30739ECERH-2 5.6 x 5.6 mm 52 A/W (@430 nm) 10 nA 2 pA/√Hz 60 pF 2 ns - 275-425 V Datasheet C30626FH 5 x 5 mm 22 A/W (@900 nm) 250 nA 0.5 pA/√Hz 30 pF 5 ns 23 fW/√Hz (@900 nm) 275-425 V Datasheet C30703FH 10 x 10 mm 16 A/W (@530 nm) 250 nA 0.5 pA/√Hz 100 pF 5 ns 40 fW/√Hz (@530 nm) 275-425 V Datasheet C30703FH-200 10 x 10 mm 16 A/W (@530 nm) 250 nA 0.7 pA/√Hz 60 pF 5 ns 40 fW/√Hz (@530 nm) 275-425 V Datasheet

Product number: SW11546

Manufacturer: Excelitas Technologies

Multi-element Silicon Array Detectors

970 nm Band Optimized; Active Area 1.8 to 3.9 mm2; AA Dimensions 1.75 x 1.22, 4.39 x 0.89, 6.45 x 0.28 mm, Pitch 0.31, 0.99, 1.59 mm; Responsivity 0.06 to 0.65 A/W; Capacitance 12 to 340 pF; Package Ceramic, PCB, 40 Pin DIP OSI Optoelectronics’ multi-element and multi-channel silicon array photodetectors consist of a number of single-element photodiodes laid adjacent to each other forming a one-dimensional sensing area on a common cathode substrate. These array detectors can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low electrical crosstalk and super-high uniformity between adjacent elements allowing very high precision measurements. Arrays offer a low-cost alternative when a large number of detectors is required. The detectors are optimized for either UV (A5V-35UV variant), visible or near IR range. Then can be either operated in photoconductive mode (reverse biased, A5C variants) to decrease the response time, or in photovoltaic mode (unbiased, A2V and A5V variants) for low-drift applications. The A2V-16 version can be coupled to any scintillator crystal for measuring high-energy photons in the X-ray and gamma-ray region of the electromagnetic spectrum. In addition, they have been mechanically designed, so that several of them can be mounted end to end to each other in applications where more than 16 elements are needed. Key Features: Common Substrate Array Ultra-low Crosstalk UV Enhanced (A5V-35UV) Low Dark Current Low Capacitance Solderable Applications: Level Meters; Optical Spectroscopy; Position Sensors; Computed Tomography Scanners; Medical Equipment; High-speed Photometry

Product number: SW11036

Manufacturer: OSI Optoelectronics

OSDXX-E Detector-Filter Combinations

550 nm Band Optimized; Active Area 1 to 100 mm2; AA Dia. 2.5, 11.3 mm Round, 1.0 x 1.0 to 3.8 x 3.8 mm Square; Responsivity 1 to 56 nA/lux; Capacitance 7 to 2,500 pF; Package TO-5, TO-8, TO-18 OSI Optoelectronics’ OSDXX-E series of detector-filter combinations – also referred to as eye response detectors – are blue-enhanced photodiode detectors with high-quality color-correcting filters. The resulting spectral response approximates that of the human eye. In addition to the OSDXX-E photodiodes listed in the datasheet, OSI Optoelectronics can provide other photodiodes with a variety of optical filters. Please contact AMS Technologies for a detector-filter combination tailored to your specific requirements. Key Features: Human Eye Response Detectors TO-Can Packages Applications: Photometry; Radiometry; Medical Instrumentation; Analytical Chemistry

Product number: SW11057

Manufacturer: OSI Optoelectronics