Fully Depleted Si Photodiodes

Product number: SW11073

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Fully Depleted Si Photodiodes OSI Optoelectronics Datasheet

Product information "Fully Depleted Si Photodiodes"

350 to 1100 nm; Active Area 7.1 to 100 mm2; AA Dia. 3.00, 4.35 mm Round, 5.8 x 5.9, 10 x 10 mm Square; Rise Time 1.5 to 40 ns; Responsivity 0.54 to 0.60 A/W; Capacitance 8.0 to 1,300 pF; Package TO-8, Ceramic

OSI Optoelectronics' large active area high-speed detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in nano seconds.

The high reverse bias at this point increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for high responsivity as well as active area.

These large active area radiation detectors can also be fully depleted for applications measuring high-energy X-rays, ɣ-rays as well as high-energy particles such as electrons, alpha rays and heavy ions. These types of radiation can be measured with two different methods: indirect and direct.

With the indirect high-energy radiation measurement method, the detectors are coupled to a scintillator crystal for converting high-energy radiation into a detectable visible wavelength. The devices are mounted on a ceramic and covered with a clear layer of an epoxy resin for an excellent optical coupling to the scintillator. This method is widely used in detection of high-energy gamma rays and electrons. This is where the XUV-XXX(C) series devices fail to measure energies higher than 17.6 keV. The type and size of the scintillator can be selected based on radiation type and magnitude.

For direct measurement of high-energy radiation such as alpha rays and heavy ions, both PIN-RD100 and PIN-RD100A devices can also be used without any epoxy resin or glass window. The radiation exhibits loss of energy along a linear line deep into the silicon after incident on the active area.

In addition to their use in high-energy particle detection, the PIN-RD100 and PIN-RD100A are also excellent choices for detection in the range between 350 to 1100 nm in applications where a large active area and high speed is desired.

These detectors can be coupled to a charge-sensitive preamplifier or low-noise op-amp as shown in the data sheet, where the configuration for indirect measurement is also shown with a scintillator crystal.

Key Features:

Large Active Area
Fully Depletable
Fast Response
Ultra-low Dark Current
Low Capacitance
High Breakdown Voltage
Scintillator Mountable

Applications: Laser Applications; Control Systems; Electron Detection; High-energy Physics; Medical Instrumentation; High Energy Spectroscopy; Charged Particle Detection; Nuclear Physics

Manufacturer "OSI Optoelectronics"

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