4x4 Array Detector; 810, 850 nm Band Optimized; Active Area 1,0, 1.96 mm2; Responsivity 0.35 to 0.4 A/W; Capacitance 35, 75 pF; Package Ceramic LCC OSI Optoelectronics’ 4X4D series comprise 4 by 4 arrays of super blue enhanced photodetectors. Two models are available: PIN-4X4D silicon array detectors feature an active area of 1.96 mm2 and a peak responsivity wavelength of 850 nm, while UDT-4X4D silicon array detectors with an active area of 1.0 mm2 show peak responsivity at 810 nm. OSI Optoelectronics’ proprietary design provides virtually complete isolation between all of the 16 elements. The standard LCC package allows easy integration into your surface mount applications. Numerous applications include ratio and scattering measurements, as well as Position Sensing. For custom packages, special electro-optic requirements, or to order these parts in die form, please contact AMS Technologies. Key Features: 4x4 Array Detector Active Area: 1.0x1.0 mm (UDT-4X4D), 1.4x1.4 mm (PIN-4X4D) Peak Responsivity Wavelength: 810 (UDT-4X4D), 850 nm (PIN-4X4D) Very Fast Response Extremely Low Cross-talk Surface Mount Design Package: Ceramic LCC Applications: Ratio and Scattering Measurements; Position Sensing

540, 930 nm Band Optimized; 16 Elements; Active Area 2.35 mm2 per Element; AA Dimensions 2.00 x 1.18 mm per Element, Pitch 1.57 mm; Rise Time 0.1 µs; Responsivity 0.31, 0.59 A/W; Capacitance 28 pF; Package Special PCB OSI Optoelectronics' A2C-16-1.57 multi-channel X-ray detector consists 16 individual elements grouped together in an array and mounted on PCB. For X-ray or gamma-ray application, these multi-channel detectors offer scintillator-mounting options: BGO, CdWO4 or CsI(TI). BGO (Bismuth Germanate) acts as an ideal absorber: it is widely accepted in high-energy detection applications. CdWO4 (Cadmium Tungstate) exhibits sufficiently high light output, helping improve spectrometry results. CsI (Cesium Iodide) is another high energy absorber, providing adequate resistance against mechanical shock and thermal stress. When coupled to scintillators, these silicon arrays map any medium or high radiation energy over to visible spectrum via scattering effect. Also, their specially designed PCB allows end-to-end connectivity. Multiple arrays can be deployed in situations that call for larger scale assembly. Key Features: Scintillator Platform 5 V Bias Channel Spacing Variety Applications: Position Sensors; Multi-channel Gamma Counting; X-ray Security Systems

800 nm Band Optimized; Active Area 0.03 to 19.6 mm2; AA Dia. 0.2 to 5.0 mm; Responsivity 20 to 50 A/W; Capacitance 1.5 to 105 pF; Package TO-5, TO-8, TO-52 OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications. Optimized for the 800 nm wavelength band, the APD series is available with five different active area sizes ranging from 0.2 to 5.0 mm in diameter. Depending on active area size, the devices are supplied in TO-5, TO-8 or TO-52 packages. Key Features: High Speed Responsivity / QE High Bandwidth / Fast Response Low Noise Low Bias Voltage Hermetically Sealed TO-Packages Applications: High Speed Optical Communications; Laser Range Finders; Bar Code Readers; Optical Remote Control; Medical Equipment; High Speed Photometry

800 nm Band Optimized; Active Area 0.003 to 1.77 mm2; AA Dia. 0.2 to 1.5 mm; Responsivity 50 A/W; Capacitance 1.5 to 10 pF; Package TO-5, TO-52 OSI Optoelectronics introduces its APDXX-8-150 “800 nm optimized” silicon avalanche photodiode (APD) series, available in hermetic metal packages. Devices offer lower noise and high sensitivity over bandwidths up to 1 GHz. APDXX-8-150 devices exhibit a low temperature coefficient of 0.45 V/˚C. OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. The APDXX-8-150 series is available with different active area sizes ranging from 0.2 to 1.5 mm in diameter as well as with flat windows or ball lenses for optical fiber applications. Depending on active area size, the devices are supplied in TO-5, or TO-52 packages. Key Features: Active Area Diameters: 0.2, 0.5, 1.0, 1.5 mm Low Temperature Coefficient: 0.45 V/°C High Sensitivity Low Noise High Bandwidth Applications: Optical Fiber Communication; Laser Range Finder; High-speed Photometry

920 nm Band Optimized; Active Area 5.76 to 88.36 mm2; AA Dimensions 2.4 x 2.4 to 9.4 x 9.4 mm; Rise Time 10, 20 ns; Responsivity 0.30 to 0.59 A/W; Capacitance 50 to 900 pF; Package SMT OSI Optoelectronics’ BI-SMT product series are single-channel back-illuminated photodiodes specifically designed to minimize “dead” areas at the edge of the device. Each device is designed on a package with dimensions very similar to the chip itself. This design allows for multiple detectors to be arranged in a tiled format and offers ease of coupling to a scintillator. Key Features: Chip Size Package Easy Coupling to Scintillator Patterned Electrodes Applications: X-Ray Inspection; Computed Tomography; General Industrial Use

410, 436 nm Band Optimized; Active Area 0.81 to 200 mm2; AA Dia. 1.02 to 11.3 mm Round, 1.0 x 1.0 to 10 x 20 mm Rect.; Rise Time 0.02 to 45 µs; Responsivity 0.15 to 0.21 A/W; Capacitance 35 to 17,000 pF; Package TO-5, TO-8, TO-18, BNC, Metal, Plastic, Special OSI Optoelectronics’ blue-enhanced photovoltaic detector series is utilized for applications requiring high sensitivity in the visible-blue region and moderate response speeds. These detectors provide additional sensitivity in the 350 to 550 nm region when compared to the regular photovoltaic devices. For visible and near IR applications i.e. spectral response ranges from 350 to 1100 nm, regular photovoltaic devices can be considered. These detectors feature high shunt resistance and low noise and exhibit long term stability. Unbiased operation of these detectors offers stability under wide temperature variations in DC or low-speed applications. For high light levels (>10mW/cm2), the photoconductive series detectors should be considered for better linearity. These blue-enhanced photovoltaic detectors are not designed to be reverse biased! Very slight improvement in response time may be obtained with a slight bias. Applying a reverse bias of more than a few volts (>3 V) will permanently damage the detectors. If faster response times are required, the photoconductive series should be considered. Please refer to the photovoltaic mode (PV) paragraph in the application note “Photodiode Characteristics and Applications” available under “Downloads” for detailed information on electronics set up. Key Features: Blue Enhanced High Speed Response Low Capacitance Low Dark Current Wide Dynamic Range High Responsivity Ultra Low Noise High Shunt Resistance Applications: Pulse Detectors; Optical Communications; Bar Code Readers; Optical Remote Control; Medical Equipment; High-speed Photometry; Colorimeters; Spectroscopy Equipment; Fluorescence

970 nm Band Optimized; Active Area 7.25 mm2; AA Dimensions 2.69 x 2.69 mm; Rise Time 20 ns; Responsivity 0.15 to 0.60 A/W; Capacitance 12 to 65 pF; Package Plastic Molded OSI Optoelectronics’ BPW-34 series are a family of high quality and reliability plastic encapsulated silicon photodiodes. The devices in this series exhibit similar electrical characteristics, but vary in optical response. BPW-34B has an excellent response in the blue region of the spectrum. BPW-34 series of plastic molded silicon photodiodes are excellent for mounting on PCB and hand-held devices in harsh environments. Key Features: High Reliability High Density Package Rugged Resin Mold High Speed Low Dark Current Applications: IR Sensors; Bar Code Scanners; Color Analysis; Smoke Detectors

400 to 1000 nm; Detector Responsivity 0.5 A/W; Amplifier Gain 14 kΩ; Power Supply 5 V; Max. Operating Voltage 6 V; Max. Data Rate 100 Mbps OSI Optoelectronics’ BPX65-100 series of fiber optic receivers contains a BPX-65 ultra-high-speed photodiode coupled to an NE5212 (Signetics) transimpedance amplifier. Standard products include versions with no fiber connector as well as ST (BPX65-100ST) and SMA (BPX65-100SMA) connector versions. Key Features: Bandwidth: 140 MHz Differential Trans-resistance: 14 KΩ Spectral Range: 400 to 1000 nm 2.5 pA/√Hz Transimpedance Amplifier Applications: 100 Mbps Optical Communications; Fiber Patchcord Coupling; Silicon-based Optical Receivers

550 nm Band Optimized; Active Area 5.7, 100 mm2; AA Dia. 11.28 mm Round, 2.4 x 2.4 mm Square; Rise Time 0.1 to 1.0 µs; Responsivity 0.025 to 0.27 A/W; Capacitance 100 to 1,500 pF; Package TO-5, BNC, Special OSI Optoelectronics’ detector-filter combination series incorporates a filter with a photodiode to achieve a tailored spectral response. OSI Optoelectronics offers a multitude of standard and custom combinations. Upon request, all detector-filter combinations can be provided with NIST-traceable calibration data specified in terms of A/W, A/lm, A/lux or A/fc. Among many possible custom combinations, following are a few detector-filter combinations available as standard parts: PIN-10AP is a 1 cm2 active area, BNC package detector-filter combination which duplicates the response of the most commonly available optical aid, the human eye. The eye senses both brightness and color, with response varying as a function of the wavelength. This response curve is commonly known as the CIE curve. The AP filters accurately match the CIE curve to within 4% of the area. PIN-555AP has the same optical characteristics as the PIN10-AP, with an additional operational amplifier in the same package. The package and the operational amplifier combination is identical to UDT-555D detector-amplifier combination (Photop™). PIN-005E-550F uses a low cost broad-bandpass filter with peak transmission at 550 nm to mimic the CIE curve for photometric applications. The pass band is similar to the CIE curve, but the actual slope of the spectral response curve is quite different. This device can also be used to block the near IR portion of the spectral range, 700 nm and above. PIN-005D-254F is a 6 mm2 active area, UV-enhanced photodiode-filter combination which utilizes a narrow bandpass filter peaking at 254 nm. Key Features: CIE Match (AP Models) Flat Band Response (DF Models) Narrow Bandpass Version Available (254 Models) Hybrid Version With Amplifier Available (PIN-555AP) BNC Packages Available Applications: Analytical Chemistry; Spectrophotometry; Densitometers; Photometry/Radiometry; Medical Instrumentation; Liquid Chromatography

OSI Optoelectronics’ super linear duo-lateral position sensing detectors (PSDs) feature state of the art duo-lateral technology to provide a continuous analog output proportional to the displacement of the centroid of a light spot from the center, on the active area. As continuous position sensors, these detectors are unparalleled, offering position accuracies of 99% over 64% of the sensing area. These accuracies are achieved by duo-lateral technology, manufacturing the detectors with two separate resistive layers, one located on the top and the other at the bottom of the chip. One- or two-dimensional position measurements can be obtained using these sensors. A reverse bias should be applied to these detectors to achieve optimum current linearity at high light levels. The maximum recommended power density incident on the duo-lateral PSDs is 1 mW/cm2. For optimum performance, the incident beam should be perpendicular to the active area, with a spot diameter of less than 1 mm. Key Features: Duo Lateral Structure One-dimensional (SL Variants) and Two-dimensional (DL, DLS Variants) Versions High Speed Response Super Linear Ultra High Position Accuracy: Up to 99% Low Capacitance Low Dark Current Wide Dynamic Range High Reliability Metal or Ceramic Package Applications: Pulse Detectors; Optical Communications; Bar Code Readers; Optical Remote Control; Medical Equipment; High-speed Photometry; Beam Alignment; Position Sensing; Angle Measurement; Surface Profiling; Height Measurements; Targeting; Guidance Systems; Motion Analysis

850 nm Band Optimized; Active Area 0.018 to 0.126 mm2; AA Dia. 0.150 to 0.400 mm; Responsivity 0.36 A/W; Rise Time 35 to 100 ps; Capacitance 0.65 to 1.73 pF; Package TO-46; Fiber Receptacles FC, ST, SC, SMA Available 800nm band optimized Silicon APD, 0.2mm dia AA Si APD in TO can package with Lens Avalanche Photodiode Active Area Size: Diameter 5.0 mm Optimal Spectral Band: 630 nm Breakdown Voltage: 150- Low Voltage Operation Package Style: TO-8 style Name (Si Detector/Array); Model; Wavelength range; Detector size; Risetime; Freq. response; Capacitance; Additional information OSI Optoelectronics' FCI-125G family of large active area and high-speed silicon PIN photodiodes possesses a large sensing area optimized for short-haul optical data communication applications at 850 nm. The photodetectors exhibit high responsivity, wide bandwidth, low dark current and low capacitance at 3.3 V. They are designed to match the most widely used transimpedance amplifiers. The photodiodes can be used in all 850 nm transceivers and GBICs up to 1.25 Gbps applications such as Gigabit Ethernet and Fibre Channel. The chip is isolated in a 3-pin TO-46 package with options of micro lens cap or an AR coated flat window. They are also available in standard fiber receptacles such as FC, ST, SC and SMA. For availability in chip form please contact AMS Technologies. Key Features: Silicon Photodiodes High Responsivity Large Diameter Sensing Area Low Capacitance @ 3.3V Bias Applications: High-speed Optical Communications; Single Mode/Multi Mode Fiber Optic Receivers; Gigabit Ethernet/Fibre Channel; SONET/SDH, ATM

650 to 850 nm; Active Area 0.004 mm2; AA Dia. 0.070 mm, Pitch 0.25 mm; Responsivity 0.63 A/W; Capacitance 0.65 pF; Package Wraparound Ceramic Submount OSI Optoelectronics’ FCI-GaAs-XXM series include 4 and 12 element GaAs PIN photodetector arrays designed for high-speed fiber receiver and monitoring applications. The 70 µm diameter elements are capable of 2.5 Gbps data rates. Anti-reflective (AR) coated and sensitive to telecommunication wavelengths, this array is a perfect receiver for single mode (SM) or multi mode (MM) fiber ribbon with a 250 µm pitch. The FCI-GaAs-XXM comes standard on a wraparound ceramic submount. Board level contacts have a 0.5mm pitch. If you need a custom array or require special testing for your OSI Optoelectronics part, please contact the AMS Technologies applications team. Key Features: High Speed High Responsivity Anti-reflective (AR) Coated Elements Active Area Diameter 70 µm Pitch 250 µm Wraparound Ceramic Submount Spectral Range 650 to 860 nm Applications: Fiber Optic; DWDM Monitors; SM or MM Fiber Ribbons; Parallel Interconnects

650 to 850 nm; Active Area 0.008 mm2; AA Dia. 0.1 mm; Responsivity 1,000 to 1,700 V/W; Transimpedance 2,800 Ω; Package TO-46, TO-52 OSI Optoelectronics’ FCI-H125/250G-GaAs-100 series with active area sizes of 100 µm is a compact integration of OSI Optoelectronics’ high-speed GaAs photodetector with a wide dynamic range transimpedance amplifier (TIA). Combining the detector with the TIA in a hermetically sealed 4-pin TO-46 or TO-52 package provides ideal conditions for high-speed signal amplification. Low capacitance, low dark current and high responsivity from 650 to 860 nm make these devices ideal for high bit rate receivers used in LAN, MAN and other high-speed communication systems. TO packages come standard with a lensed cap to enhance coupling efficiency or with a broadband double-sided anti-reflective (AR) coated flat window. The FCI-H125/250G-GaAs-100 series is also offered with FC, SC, ST and SMA receptacles. Key Features: GaAs Photodetector / Low-noise Transimpedance Amplifier Hybrid High Bandwidth Wide Dynamic Range Hermetically Sealed TO-46 or TO-52 Can Single +3.3 to +5 V Power Supply Spectral Range 650 to 850 nm Differential Output Applications: High-speed Optical Communications; Gigabit Ethernet; Fibre Channel; ATM; SONET OC-48 / SDH STM-16

1100 to 1650 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm; Responsivity 1,600 to 2,500 V/W; Transimpedance 2,800 Ω; Package TO-46 OSI Optoelectronics’ FCI-H125/250G-InGaAs-75 series are compact and integrated high-speed InGaAs photodetectors with wide dynamic range transimpedance amplifiers (TIA). Combining the detector with the TIA in a hermetically sealed 4-pin TO-46 package provides ideal conditions for high-speed signal amplification. High speed and superior sensitivity make these devices ideal for high bit rate receivers used in LAN, MAN, WAN and other high speed communication systems. TO packages come standard with a lensed cap to enhance coupling efficiency, or with a broadband double-sided anti-reflective (AR) coated flat window. The FCI-H125/250G-InGaAs-75 series are also offered with FC, SC, ST and SMA receptacles. Key Features: InGaAs Photodetector / Low Noise Transimpedance Amplifier High Bandwidth / Wide Dynamic Range Hermetically Sealed TO-46 Can Single +3.3 to +5 V Power Supply Spectral Range 1100 to 1650 nm Differential Output Applications: High-speed Optical Communications; Gigabit Ethernet; Fibre Channel; ATM; SONET OC-48 / SDH STM-16

850 nm Band Optimized; Active Area 0.05 mm2; AA Dia. 0.25 mm; Responsivity 3,000 V/W; Transimpedance 8,300 Ω; Package TO-46 OSI Optoelectronics’ silicon photodiode-amplifier hybrid FCI-H125G-10 combines a low noise, high bandwidth photodetector with a transimpedance amplifier designed for short wavelength (850nm) high speed fiber optic data communications. The FCI-H125G-10 hybrid incorporates a high sensitivity silicon photodetector with a sensing area of 250 µm in diameter. It also includes a high gain transimpedance amplifier producing a differential output voltage for latching to post amplifiers used in electro-optical receivers and transceivers for Gigabit Ethernet and Fiber Channel applications up to 1.25 Gbps over multi mode fiber. The photodetector converts the light into an electrical signal while the output voltage increases with light in/out. This is achieved by a single +3.3 to +5 V positive power supply. The FCI-H125G-10 hybrid is available in 4-pin TO-46 metal packages with either a double-sided anti-reflective coated window cap or an integrated lens cap. The 250 µm diameter sensing area eases fiber alignment for connectorizing or receptacle attachment. Furthermore, the proximity of the transimpedance amplifier to the photodetector lowers the capacitance associated with long traces, therefore allowing higher bandwidth and sensitivity. Key Features: Silicon Photodetector / Low-noise Transimpedance Amplifier Hybrid Large Active Area of 250 µm Dia. High Bandwidth / Wide Dynamic Range Automatic Gain Control (AGC) Hermetically Sealed TO-46 Can Single +3.3 to +5 V Power Supply Differential Output Applications: High Speed Optical Communications; Gigabit Ethernet; Fibre Channel

1100 to 1650 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm; Responsivity 16 V/mW; Transimpedance 18 kΩ; Package TO-46 OSI Optoelectronics’ FCI-H622M-InGaAs-75 is a high-speed 75 µm InGaAs photodetector integrated with a wide dynamic range transimpedance amplifier (TIA). Combining the detector with the TIA in a hermetically sealed 4-pin TO-46 package provides ideal conditions for high-speed signal detection and amplification. Low capacitance, low dark current and high responsivity of the detector, along with low noise characteristics of the integrated TIA, give rise to excellent sensitivity. In practice, these devices are ideal for datacom and telecom applications. Cost-effective TO-46 packages come standard with a lensed cap for design simplification, or with a broadband double-sided anti-reflective (AR) coated flat window. The FCI-H622M-InGaAs-75 is also offered with FC, SC, ST and SMA receptacles. Key Features: Low Noise Transimpedance Amplifier High Bandwidth Wide Dynamic Range Single +3.3 V Power Supply Spectral Range 1100 to 1650 nm Differential Output Applications: High-speed Optical Communications; ATM; SONET OC-3 / OC-12; SDH STM-1 / STM-4; Optical Receivers

900 to 1700 nm; Active Area 0.07 mm2; AA Dia. 0.3 mm, Pitch 0.5 mm; Responsivity 0.80 to 0.85 A/W; Capacitance 8 to 10 pF; Package Flip Chip Mountable OSI Optoelectronics’ FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They are available as single element diodes or 4 - or 8- element arrays with an active area of 300 µm each. These back-illuminated InGaAs photodiodes/arrays are designed to be flip chip mounted (active area facing up), or assembled face down minimizing the overall dimensions. These low inductance, low dark current, and low capacitance back illuminated photodiodes/arrays come with or without ceramic substrates. Key Features: Back Illumination High Responsivity on Both Front and Back Low Noise Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Multichannel Fiber Optic Receiver; Power Monitoring; Single Mode (SM) Multi Mode (MM) Fiber Optic Receiver; Fast Ethernet, SONET/SDH OC-3/STM-1 ATM; Instrumentation and Analog Receivers

910 to 1650 nm; Active Area 0.001 mm2; AA Dia. 0.036 mm; Responsivity 0.75 to 0.85 A/W; Capacitance 0.16, 0.2 pF; Package Special Chip-size OSI Optoelectronics' FCI-InGaAs-36C is an OC-192 (SONET/SDH) capable photosensitive device, exhibiting low dark current and good performance stability. Both anode and cathode contacts appear on the chip's top facet. FCI-InGaAs-36C is an ideal component in high-speed optical data transport applications at 10 Gbps, responding to a spectral envelope that spans from 910 to 1650 nm. Key Features: High Speed: 10 Gbps Data Rates Low Dark Current Front Illuminated High Responsivity: Typ. 0.8 A/W @ 1550 nm Diameter of Light Sensitive Area: 36 µm Low Capacitance Applications: High Speed Optical Communications; OC-192; Optical Networking; Optical Measurement

900 to 1700 nm; Active Area 0.79, 7.07 mm2; AA Dia. 1.0, 3.0 mm; Rise Time 3, 24 ns; Responsivity 0.85 to 0.95 A/W; Capacitance 25, 225 pF; Package TO-5, TO-8 OSI Optoelectronics’ FCI-InGaAs-QXXX series are large active area InGaAs photodiodes segmented into four separate active areas. These photodiodes come in 1 mm (FCI-InGaAs-Q1000) and 3 mm (FCI-InGaAs-Q3000) active area diameter. The FCI-InGaAs-QXXX quad series with high response uniformity and low crosstalk between the elements are ideal for accurate nulling or centering applications as well as beam profiling applications. They exhibit excellent responsivity from 1100 to 1620nm, are stable over time and temperature, and feature fast response times necessary for high speed or pulse operation. FCI-InGaAs-QXXX photodiodes are packaged in isolated TO-5 or TO-8 cans with a broadband double-sided anti-reflective (AR) coated flat window and are also available mounted on ceramic substrate on request. Key Features: High Responsivity Low Noise Spectral Range: 900 to 1700nm Low Crosstalk Wide Field of View Applications: Accurate Nulling or Centering; Position Sensing; Beam Alignment; Beam Profiling

900 to 1700 nm; Active Area 0.125 mm2; AA Dimensions 0.25 x 0.5 mm; Responsivity 0.80 to 0.95 A/W; Capacitance 15 pF; Package Ceramic Substrate; Reflectance <0.6 OSI Optoelectronics’ FCI-InGaAs-WCER-LR series of InGaAs photodiodes feature a very low reflectance. Designed for telecommunication applications, the FCI-InGaAs-WCER-LR series of InGaAs/InP photodiodes has a typical optical reflectance of less than 0.6% from 1520 to 1620 nm. This ultra-low reflectance over the wide wavelength range was achieved by depositing a proprietary multi-layered anti-reflective (AR) coating directly onto the surface of the InGaAs/InP photodiode. Key Features: Reflectance: Less Than 0.6% Low Noise High Responsivity High Speed Spectral Range: 900 to 1700 nm Applications: Wavelength Lockers / Wavelength Monitoring; Lasers Back Facet Monitoring; DWDM; Instrumentation

900 to 1700 nm; Active Area 0.004, 0.011 mm2; AA Dia. 0.075, 0.120 mm; Rise Time 0.2, 0.3 ns; Responsivity 0.75 to 0.95 A/W; Capacitance 0.65, 1.0 pF; Package TO-46, Ceramic Substrate, Connector Type FC, SC, ST OSI Optoelectronics’ FCI-InGaAs-XX-XX-XX series of high-speed, IR-sensitive InGaAs photodiodes with active area diameters of 75 and 120 µm are part of OSI Optoelectronics’s family of high-speed IR sensitive detectors with fiber pigtail package. The single mode (SM) or multi mode (MM) fiber is optically aligned to either the hermetically sealed InGaAs diode in TO-46 lens cap package enhancing the coupling efficiency and stability, or directly to the InGaAs diode mounted on a ceramic substrate. High responsivity and low capacitance make these devices ideal for very high bit rate receivers used in LAN, MAN, WAN and other high speed communication and monitoring/instrumentation systems. Angle polished connectors and custom packages are also available. For a solution involving FC connector and TO-46 attachment, users may consider either FCI-InGaAs-75-SM-FC or FCI-InGaAs-120-SM-FC in single mode operation. Similarly, the multi-mode variant is available in FCI-InGaAs-120-MM-FC using 62.5/125 µm fiber. The back-reflection of -30dB typical is to be experienced in multi mode (MM) based solutions. Key Features: High Speed High Responsivity Spectral Range 900nm to 1700nm Low Back Reflection Applications: Very High Bit Rate Receivers Used in LAN, MAN, WAN; High-speed Optical Communications; Gigabit Ethernet / Fibre Channel; SONET / SDH, ATM; Optical Power Monitoring / Instrumentation

900 to 1700 nm; Active Area 0.004 mm2; AA Dia. 0.075 mm, Pitch 0.25 mm; Responsivity 0.95 A/W; Capacitance 0.65 pF; Package Wraparound Ceramic Submount OSI Optoelectronics’ FCI-InGaAs-XXM series of high speed, IR sensitive InGaAs photodiode arrays are available with 4, 8, 12 and 16 channels. Each anti-reflective (AR) coated element is capable of 2.5 Gbps data rates exhibiting high responsivity from 1100 to 1620 nm. The FCI-InGaAs-XXM photodiode arrays come standard on a wraparound ceramic submount and are designed for multi-channel fiber applications based on standard 250 nm pitch fiber ribbon. Also, 0.500 mm pitch board level contacts make it easy to connect the photodiode arrays to your circuit. Upon request, 55 µm active area, two channel arrays are available. Please contact AMS Technologies for more details. Key Features: High Speed High Responsivity Low Noise Active Area Diameter 75 µm Pitch 250 µm Spectral Range 900 to 1700 nm Applications: High-speed Optical Communications; Single Mode (SM) / Multi Mode (MM) Fiber Optic Receivers; Gigabit Ethernet / Fibre Channel; SONET/SDH, ATM; Optical Taps

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.075 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 1.5 to 20 pF; Package TO-46, Fiber Receptacles FC, SC, ST, SMA Available OSI Optoelectronics’ FCI-InGaAs-XXX series of high-speed InGaAs photodiodes with active area diameters of 75, 120, 300, 400 and 500 µm exhibit the characteristics and need for datacom and telecom applications. Low capacitance, low dark current and high responsivity from 1100 to 1620 nm make these devices ideal for high bit rate receivers used in LAN, MAN, WAN and other high-speed communication systems. FCI-InGaAs-XXX photodiodes are packaged in 3-lead isolated TO-46 cans with anti-reflective (AR) coated flat windows or micro lenses to enhance coupling efficiency. FCI-InGaAs-XXX series photodiodes are also offered with FC, SC, ST and SMA receptacles. Key Features: High Speed High Responsivity Low Noise Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Single Mode (SM) / Multi Mode (MM) Fiber Optic Receivers; Gigabit Ethernet/Fibre Channel; SONET/SDH, ATM; Optical Taps

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.07 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 0.65 to 20 pF; Package Angled Ceramic Substrate OSI Optoelectronics’ FCI-InGaAs-XXX-ACER series of high-speed InGaAs photodiode on angled ceramic submount with active area diameters of 70, 120, 300, 400 and 500 µm is part of OSI Optoelectronics' high speed IR sensitive photodiode series mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5° greatly reduces the back reflection. FCI-InGaAs-XXX-ACER chips can be epoxy/eutectic mounted onto the angled ceramic substrate. Key Features: 5° Angle Ceramic Low Noise High Responsivity High Speed Spectral Range 900 to 1700 nm Applications: High Speed Optical Communications; Gigabit Ethernet/Fibre Channel; SONET / SDH, ATM; Diode Laser Monitor; Instrumentation