Sirona

Wavelength Range 1.0-5.0 µm MWIR; Detector Size 1x1, 2x2 mm; Time Constant <2 µs; Responsivity 9x103, 4.5x103 V/W; Element Resistance 0.1-2.0 MΩ New Infrared Technologies’ (NIT) LEPTON Series of single-pixel VPD PbSe MWIR detectors are available uncooled as well as with integrated TECs (thermoelectric cooling elements), with different geometries, packaging solutions and preamplifier boards. LEPTON Series single-pixel detectors come in two standard sizes: 1 mm × 1 mm or 2 mm × 2 mm. LEPTON Series uncooled single-pixel PbSe MWIR detectors can be ordered packaged in SMD or TO-5 housings (with cap, hermetic) with sapphire window. These detectors are operational at room temperature and don’t require any cooling devices. LEPTON Series cooled single-pixel PbSe MWIR detectors are hermetically packaged in a TO-8 can housing with cap and sapphire window and include one or two thermoelectric cooler (TEC) stages for higher sensitivity as well as a thermistor. A calibration curve for the thermistor is available. NIT’s LEPTON Series also includes two low-noise preamplifier boards that are 5-V-powered via mini-USB connector: The LEPTON ANALOG PREAMP provides rotary switches to manually select the detector biasing voltage (4 steps from 1.25 V to 10 V) as well as the transimpedance gain (4 steps from 104 to 107 V/A). This preamp outputs a ±10 V analog voltage on a BNC connector. The LEPTON PREAMP WITH USB OUTPUT allows to digitally select the values for detector biasing voltage and transimpedance gain via software. Here, the output is a digital 14 Bit signal with a maximum sampling rate of 20 ksps. This preamp also features an analog output for the preamplifier stage on SMB or BNC connector. For more pixels, linear and two-dimensional array MWIR cameras are available from New Infrared Technologies – please refer to the LUXELL series of linear array MWIR cameras and TACHYON series of high-speed imaging MWIR cameras respectively. Key Features: Detector Sensing Material: VPD Polycrystalline PbSe Uncooled and TEC-cooled (1-stage, 2-stages) Versions Available Square Pixels, Available Pixel Geometries: 1 x 1 mm, 2 x 2 mm Packaging: SMD (10x10 mm) Non-hermetic, TO-5 (9.14 mm Dia.) Hermetic With Cap, TO-8 (15.24 mm Dia.) Hermetic With Cap Sapphire Window IR Detection Band: MWIR, 1.0 µm to 5.0 µm Peak Wavelength of Detection: 3.7 µm D* (λpeak) Uncooled: 2x109 Jones Typical D* (λpeak, 1,000 Hz, 1.2 Hz) Cooled: 1x1010 Jones Time Constant: <2 µs Biasing Voltage: 5 V, 10 V Typical Element Resistance: 0.1 to 2.0 MΩ Responsivity (@Vb = 10 V): 9x103 V/W (1x1 mm), 4.5x103 V/W (2x2 mm) Power: 1 mW Read-out Electronics External (Not Included) Customizable Operating Temperature: +5 °C to +70 °C (SMD), -40 °C to +85 °C (TO-5, TO8) Amplifier Board Transimpedance Gain: 104 to 107 V/A, Adjustable Manually or per Software Amplifier Board Dark Current Cancellation: 1.24 µA to 1 mA, Adjustable Manually or per Software Amplifier Board Power Supply: 5 VDC, 60 mA (mini-USB Connector) Amplifier Board Output: Analog (±10 V), Digital (14 Bit) Amplifier Board Noise: 5 pA @1 kHz, 107 V/A Amplifier Board Dimensions: 75.90 x 35.10 x 28.70 mm (Analog), 89.30 x 35.10 x 26.30 mm (USB Output) Applications: Gas & Flame Detection; Laser Detection

The Andarta sensor by Singular Photonics represents a breakthrough in SPAD (Single Photon Avalanche Diode) imaging technology, designed to meet the demanding requirements of modern research and industrial applications. Developed with a focus on flexibility, precision, and scalability, Andarta integrates advanced photon processing capabilities directly into a compact 5mm x 5mm form factor. This sensor is engineered to perform a wide range of imaging tasks, from ultra-high-speed imaging to correlation spectroscopy, making it a versatile tool for scientists and engineers working at the forefront of photonics.Leveraging noiseless performance and highly accurate photon timing, Andarta enables users to extract rich spatial and temporal data from light, even under low-light conditions. Its reprogrammable architecture and support for multiple operational modes allow for tailored imaging workflows, enhancing productivity and enabling new experimental possibilities.Key FeaturesNoiseless Performance: Andarta’s SPAD architecture ensures ultra-low noise levels, enabling precise photon detection even in challenging environments.High Sensitivity in Compact Form: Measuring just 5mm x 5mm, Andarta delivers exceptional sensitivity in a miniature package, ideal for integration into portable and wearable devices.Advanced Photon Processing: Features such as in-pixel histograms and on-chip preprocessing allow for real-time data analysis and reduced post-processing overhead.Multi-Mode Operation: Supports autocorrelation measurements, gated mode, and ultra-high-speed imaging, offering flexibility across diverse imaging scenarios.Reprogrammable Architecture: Users can adapt the sensor’s functionality to specific tasks, enhancing experimental control and scalability.Ideal for Correlation Spectroscopy: Optimized for time-resolved measurements, Andarta is particularly suited for applications requiring precise temporal resolution.Technical SpecificationsFeature SpecificationSensor Type SPAD (Single Photon Avalanche Diode)Form Factor 5mm x 5mmOperational Modes Autocorrelation, Gated Mode, Ultra High-Speed ImagingData Processing In-pixel histograms, On-chip preprocessingReprogrammability YesApplication Focus Correlation Spectroscopy, Wearables, Health ImagingApplicationsAndarta is engineered for use in a wide range of scientific and industrial domains:Biomedical Imaging: High sensitivity and compact size make it ideal for wearable health monitoring and diagnostic devices.Spectroscopy: Time-resolved and autocorrelation capabilities support advanced spectroscopic analysis.Photonics Research: Enables precise photon timing and spatial-temporal imaging for quantum optics and photonics experiments.Industrial Inspection: Suitable for high-speed imaging in automated quality control systems.What's Next?Singular Photonics continues to innovate in SPAD sensor technology, with future developments aimed at expanding pixel arrays, enhancing multispectral capabilities, and integrating AI-driven photon analysis. Researchers and developers are encouraged to explore Andarta’s capabilities and collaborate with Singular Photonics to push the boundaries of what’s possible in photon-based sensing.

Gator is a cleaning tool designed for prepping fibers before fusion splicing, connector termination, bare fiber polishing, and inspection tasks. It can be used dry or with a cleaning solvent. Simply compress it around a stripped fiber and pull to remove debris and residual buffer coating material. Each tool can clean dozens of fibers before disposal. Available in packs of 50 pieces. Applications: Fiber preparation

Active Area Diameter 0.8-3 mm; Responsivity 25-36 A/W; Capacitance 2-10 pF; NEP 14-20 fW/√Hz; Dark Current 50, 100 nA; Package TO-5, TO-8 Excelitas’ 1064 nm long-wavelength enhanced Silicon Avalanche Photodiodes (APDs) C30954EH, C30955EH and C30956EH are made using a double-diffused “reach-through” structure. The design of these photodiodes is such that their long-wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties. The C30954EH, C30955EH and C30956EH long-wavelength enhanced APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low-noise, low-capacitance, and fast rise and fall times characteristics. To help simplify many design needs, these APDs are also available in Excelitas’ high-performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. In addition, these APDs are also available with built-in thermo-electric cooler for easier temperature control. The C30954EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 0.8 mm active area diameter in a TO-5 package. The C30955EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 1.5 mm active area diameter in a TO-5 package. The C30956EH large-area, long-wavelength enhanced silicon avalanche Photodiode (Si APD) provides a 3 mm active area diameter in a TO-8 package. Key Features: Active Area Diameter: 0.8, 1.5, 3 mm High Quantum Efficiency at 1060 nm: ≤40% Enhanced Long-wave Response: >900 nm Fast Response Time: 2 ns Wide Operating Temperature Range Low Capacitance @100 kHz: 2 to 10 pF Responsivity @1060 nm: 25 to 36 A/W Dark Current: 50, 100 nA Spectral Noise Current: 0.5 pA/√Hz NEP @1060 nm: 14 to 20 fW/√Hz Vop Range: 275 to 425 V Hermetically Sealed Packages: TO-5, TO-8 RoHS Compliant TEC Option Available Customization Available Upon Request Applications: Range Finding; LiDAR (Light Detection and Ranging); YAG Laser Detection