Frequency Bandwidth up to 0.25, 1 GHz; Low Cut-off Frequency DC-10 kHz; High Cut-off Frequency 100 kHz-1 GHz; Transimpedance 0.5-200 kV/A; Output Impedance 50 Ω; Output Voltage Swing ±1-±10 V Vigo System’s AIP, PIP, MIP, FIP and SIP configurable line series of infrared (IR) detection modules integrate the infrared photodetector and the preamplifier in a common package. This integration makes the detectors less vulnerable to over-bias, electrostatic discharge, electromagnetic interference (EMI) and other environmental exposures. Additional advantages of the integration are improved high-frequency (HF) performance, output signal standardization, miniaturization, and cost reduction. Vigo System’s broad line of transimpedance preamplifiers is especially designed for integration with each type of the supplier’s IR detectors. The configurable line of modules enables the selection of the active area, type of preamplifier and bandwidth of the detection module. This makes it possible to adapt the module to the needs of your own application. To obtain the most optimal parameters of integrated module each preamplifier is individually matched to the selected detector. The parameters of each integrated set will be known after final evaluation (matching, adjustment and final tests). If you need any assistance in selecting Vigo System products that are appropriate for your application, please contact the AMS Technologies IR detector specialists. Vigo System’s AIP series is a new generation of transimpedance, AC or DC coupled preamplifiers. It is designed to operate with either biased or non-biased Vigo System detectors. AIP is „all‑in-one” device – a preamplifier is integrated with a fan and a thermoelectric cooler controller in a compact housing. It is very convenient and user‑friendly device, thus can be easily used in a variety of applications. AIP series modules can be equipped with thermoelectrically cooled models of the PC, PCI, PV, PVI, PVM and PVMI IR detector series. Vigo System’s PIP series comprises programmable, “smart” preamplifiers, offering extreme flexibility combined with superior signal parameters and high reliability. A built-in voltage monitor allows to check and optimize the working conditions (supply voltages, detector bias voltage, first and last stage output voltage offset etc.). It is also possible to change the gain, coupling (AC/DC), optimize the first stage transimpedance and manually or automatically suppress the voltage offset. Optimized parameters are stored into the internal EEPROM memory and automatically loaded after the power is on. Reset to default settings is available at any time. For proper operation, the PTCC-01 TEC controller is required. PIP series modules can be equipped with thermoelectrically cooled models of the PC, PCI, PV, PVI, PVM and PVMI IR detector series. Vigo System’s MIP series provides medium-size transimpedance, DC or AC coupled preamplifiers, intended to operate with either biased or non-biased Vigo System IR detectors. MIP series modules are equipped with a fan, do not require any additional external heatsink and are one of the most user-friendly preamplifier series which surely facilitates work. MIP series modules can be equipped with thermoelectrically cooled models of the PC, PCI, PV, PVI, PVM and PVMI IR detector series. Vigo System’s FIP series of high-speed transimpedance, AC-coupled preamplifiers is intended to operate with the biased, TE-cooled IR detector models of Vigo System’s PV and PVI series. Thi series’ fast preamplifier enables precise I-V conversion, detector biasing up to 800 mV and simultaneously maintains compact size and keeps current noise low. FIP series modules are equipped with a fan and do not require additional heat dissipation. They are suitable for applications requiring wide frequency bandwidth. An additional DC output is available as an option. Vigo System’s SIP series of ultra-small transimpedance, AC- or DC-coupled preamplifiers is designed to operate with either biased or non-biased detectors. It is compatible with uncooled IR detectors (in TO39 package, SIP-TO39) or thermoelectrically cooled IR detectors (in TO8 package, SIP-TO8) of the PC, PCI, PV, PVI, PVM and PVMI series. SIP series modules are dedicated for OEM applications, require external heatsinks and provide a possibility to adjust gain (devices with a frequency bandwidth up to 100 MHz). Key Features: Integrated Fan (AIP, MIP, FIP) Integrated TEC Controller (AIP) DC Monitor (AIP, Optional for FIP) Frequency Bandwidth up to 250 MHz, 1 GHz (FIP) Optimized for Effective Heat Dissipation Compatible with Optical Accessories Universal, Versatile & Flexible, Convenient to Use Parameters Configurable by the User (PIP): Output Voltage Offset; Gain (in 40 dB Range); Bandwidth (150 kHz/1.5 MHz/20 MHz, 1.5 MHz/15 MHz/100 MHz); Coupling AC/DC; Detector’s Parameters (Temperature, Reverse Bias etc.) Very Small Size (SIP) Adjustable Gain as an Option (SIP) Low Cut-off Frequency flo: DC to 10 kHz High Cut-off Frequency fhi: 100 kHz to 1 GHz Transimpedance Ki: 0.5 kV/A to 200 kV/A Output Impedance Rout: 50 Ω Output Voltage Swing Vout: ±1 V-, ±2 V, ±10 V Power Supply Voltage: +5 VDC, +12 VDC, ±9 VDC, ±15 VDC, +12/-5 VDC Max. Power Supply Current: ±50 mA, +100/-50 mA Signal Output Socket: SMA, MMCX DC Output Socket: SMA Power Supply & TEC Control Socket: DC 2.1/5.5, DC 2.5/5.5, LEMO Female (PIP, MIP FIP), AMP2x4 (Male) Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense

1-15 µm; Active Area 0.000625-16 mm²; Detectivity ≥9.0×106- 4.0×1010 cm·Hz1/2/W; Resistance ≤120-≤1,200 Ω; Package TO39, BNC, TO8, TO 66 Vigo System’s PC/PCI range of photoconductive detectors is based on the photoconductive effect. Infrared radiation generates charge carriers in the semiconductor active region decreasing its resistance. The resistance change is sensed as a current change by applying a constant voltage bias. The PC/PCI series devices are characterized by near linear current-voltage characteristics. The electric field in photoconductors is constant across the device. These components are based on sophisticated HgCdTe heterostructures for the best performance and stability and optimized for the maximum performance at λopt. Vigo System’s PC series features 1 µm to 12 μm HgCdTe uncooled, ambient temperature IR photoconductive detectors. The devices should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The 1/f noise corner frequency increases with the cut-off wavelength. PC series devices are also available thermoelectrically cooled by two-stage (PC-2TE series), three-stage (PC-3TE series) or even four-stage (PC-4TE series) TEC structures, resulting in 1 µm to 14 μm (PC-2TE), 1 µm to 15 μm (PC-3TE) or 1 µm to 16 µm (PC-3TE) HgCdTe photoconductive detectors. These series are protected by a 3° wedged sapphire (wAl2O3, PC-2TE) or zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. The PCI series is optically immersed in order to further improve the parameters of the devices. This series’ cut-on wavelength is limited by GaAs transmittance (~0.9 μm). Corresponding to the PC series, PCI series components are also available either as 1 µm to 12 μm HgCdTe uncooled, ambient temperature IR photoconductive detectors or as 1 µm to 15 µm (PCI-4TE: 16 µm) HgCdTe photoconductive detectors that are thermoelectrically cooled by two-stage (PCI-2TE series), three-stage (PCI-3TE series) or even four-stage (PCI-4TE series) TEC structures, again with a 3° wedged sapphire (wAl2O3, PC-2TE) or wedged zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. For its range of PC/PCI HgCdTe (MCT) photoconductive detectors, Vigo System provides a broad range of selected line or configurable line infrared (IR) detection modules that integrate the IR photodetector with the preamplifier and – depending on the module series – also signal processing electronics, optics, heat dissipation systems and other components in a common package. Key Features: High Detectivity Low Speed High Stability and Reliability, Long Lifetime and MTBF 1/f Noise Corner Frequency fc: ≤10 kHz to ≤20 kHz Active Element Material: Epitaxial HgCdTe Heterostructure Optimal Wavelength λopt: 5.0 to 14.0 μm With or Without Immersion Microlens Technology Uncooled, Room Temperature Operation or Thermoelectrically Cooled (2-Stage, 3-Stage or 4-Stage) Detectivity D*: ≥1.9x107 to ≥4.0×1010 cm·Hz1/2/W (λpeak, 20 kHz), ≥9.0×106 to ≥2.0×1010 cm·Hz1/2/W (λopt, 20 kHz) Different Sizes of Active/Optical Area A(O): 25×25 µm² to 4×4 mm² Current Responsivity-Active (Optical) Area Length Product Ri(λopt)·L(O): ≥0.001 to ≥3.0 A·mm/W Time Constant τ: ≤2 ns to ≤20,000 ns Bias Voltage Active Area Length Ration Vb/L: ≤0.15 V/mm to ≤24.5 V/mm Resistance R: ≤120 to ≤1,200 Ω Active Element Temperature Tdet: ~195 to ~230 K (TE-cooled Versions) Different Acceptance Angles Φ: ~36° to ~124° Different Packages: TO39, BNC, TO8, TO 66 Different Infrared Windows: None, wAl2O3, wZnSeAR Wide Range of Dedicated Preamplifiers and Accessories Available Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense

1.6-10.5 µm; Active Area 0.01, 1 mm²; Responsivity 0.04-4.4 A/W; Detectivity 1.2x108-9.0×109 cm·Hz1/2/W; Resistance 28-5,000 Ω; Package TO39, TO8 Vigo System develops and produces a variety of MWIR and LWIR type II superlattice (T2SL) photoconductive (PC, PCAS series) and photovoltaic (PV, PVAS series) IR detectors, operating at room temperature or thermoelectrically cooled. These detectors achieve excellent parameters without cryogenic cooling (LN2). They do not contain mercury or cadmium and are complying with the RoHS Directive. The PCAS series of InAs/InAsSb type II superlattice photoconductive IR detectors contains 2-stage (PCAS-2TE series) or 3-stage (PCAS-3TE series) thermoelectrically (TE) cooled detectors with excellent parameters. Photoconductive detectors should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. A 3° wedged zinc selenide anti-reflection (AR) coated window (wZnSeAR) prevents unwanted interference effects. Some models additionally feature anti-reflection (AR) coating applied to the active element. For detection of CW radiation, the use of an optical chopper system is recommended. The PVAS series of InAs/InAsSb type II superlattice photovoltaic IR detectors contains uncooled or 2-stage (PVAS-2TE series) thermoelectrically (TE) cooled detectors with excellent parameters. The PVAS-2TE series features a 3° wedged sapphire window (wAl2O3) preventing unwanted interference effects. Key Features: Active Element Material: Epitaxial InAs or InAsSb Superlattice Hetereostructure Wide Spectral Range: 1.6 µm to 10.5 μm High Responsivity Excellent Linearity Cut-on Wavelength λcut-on (10%): 1.6 to ≤2.0 μm ±0.2 (±0.5) µm Peak Wavelength λpeak: 4.0 to 11.0 μm ±0.3 (±0.5) µm Cut-off Wavelength λcut-off (10%): 5.8 to 15.0 μm ±0.3 µm Detectivity D*: ~1.2x108 to ~9.0×109 cm·Hz1/2/W (λpeak) Current Responsivity Ri(λpeak): ~0.04 to ~4.4 A/W Time Constant τ: ~3 to ~17 ns Resistance R: ~28 Ω to ~5,000 Ω Environmentally Friendly, Complying With the RoHS Directive No Bias Required (PVAS Series) Bias Voltage Vb (PCAS Series): 0.5, 0.6 V Typ. No 1/f Noise (PVAS Series) 1/f Noise Corner Frequency fc (PCAS Series): 20 to 300 kHz Typ. Uncooled, Room Temperature Operation or 2-Stage / 3-Stage Thermoelectrically (TE) Cooled Versions Active Element Temperature Tdet: ~210 ,~230 K (TE-cooled Versions) Size of Active Area A: 0.1×0.1 mm², 1x1 mm² Acceptance Angle Φ: ~70°, ~90° Package: TO39, TO8 Infrared Windows: None, wZnSeAR, wAl2O3 Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense

2-13 µm; Active Area 0.0025-16 mm²; Responsivity ≥0.1-≥1.5 A/W; Detectivity ≥1.0x107-1.0×1012 cm·Hz1/2/W; Resistance 10-1,500 Ω; Package TO39, BNC, TO8, TO 66, PEM-SMA, PEM-TO8 Vigo System’s range of photovoltaic detectors (photodiodes) is based on semiconductor structures with one (PV/PVI) or multiple (PVM/PVMI) homo- or heterojunctions. Absorbed photons produce charge carriers that are collected at the contacts, resulting in external photocurrent. Photovoltaic detectors have complex current/voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage. Reverse bias voltage is frequently applied to increase responsivity, differential resistance, reduce the shot noise, improve high frequency performance and increase the dynamic range. Vigo System’s PV, PVI, PVM and PVMI series are based on sophisticated HgCdTe heterostructures for the best performance and stability. The devices are optimized for the maximum performance at λopt. The PV series features 2.5 µm to 6.5 μm HgCdTe uncooled, ambient temperature IR photovoltaic detectors. Cut on wavelength can be optimized upon request. Reverse bias may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. PV series devices are also available with 2 µm to 12 μm HgCdTe detectors that are thermoelectrically cooled by two-stage (PV-2TE series), three-stage (PV-3TE series) or even four-stage (PV-4TE series) TEC structures. These series are protected by a 3° wedged sapphire (wAl2O3) or zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. The PVI series is optically immersed in order to further improve the parameters of the devices and also available either as 2.5 µm to 6.5 μm HgCdTe uncooled, ambient temperature IR photovoltaic detectors or as 2 µm to 12 μm HgCdTe detectors that are thermoelectrically cooled by two-stage (PVI-2TE series), three-stage (PVI-3TE series) or even four-stage (PVI-4TE series) TEC structures, again with a 3° wedged sapphire (wAl2O3) or zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. Vigo System’s PVM series comprises of multiple junction uncooled, ambient temperature photovoltaic detectors, especially useful as large active area detectors operating within the spectral range of 2 µm to 13 μm. PVM series devices are also available as 2 µm to 12 μm HgCdTe two-stage thermoelectrically cooled photovoltaic multiple junction detectors (PVM-2TE series), protected by a 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. The PVMI series is optically immersed in order to further improve the parameters of the devices. Corresponding to the PVM series, PVMI series components are also available either as 2 µm to 12 μm HgCdTe uncooled, ambient temperature multiple junction IR photovoltaic detectors or as 2 µm to 13 μm HgCdTe multiple junction detectors that are thermoelectrically cooled by two-stage (PVMI-2TE series), three-stage (PVMI-3TE series) or even four-stage (PVMI-4TE series) TEC structures, again with a 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. Vigo System’s PEM series includes 2 µm to 12 μm HgCdTe uncooled, ambient temperature photovoltaic IR detectors based on the photoelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. The PEMI series features the optically immersed versions of these devices. Both series are designed for the maximum performance at 10.6 μm and especially useful as a large active area detectors to detect CW and low frequency modulated radiation. These devices are mounted in specialized packages with an incorporated magnetic circuit inside. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) windows prevent unwanted interference effects and protect against pollution. For its range of PV/PVI/PVM/PVMI/PEM/PEMI HgCdTe (MCT) photovoltaic detectors, Vigo System provides a broad range of selected line or configurable line infrared (IR) detection modules that integrate the IR photodetector with the preamplifier and – depending on the module series – also signal processing electronics, optics, heat dissipation systems and other components in a common package. Key Features: High Performance, Reliability and Repeatability in Mass Production Cost-effective Solutions Fast Delivery Active Element Material: Epitaxial HgCdTe Heterostructure Optimal Wavelength λopt: 3.0 to 10.6 μm With or Without Immersion Microlens Technology Uncooled, Room Temperature Operation or Thermoelectrically Cooled (2-Stage, 3-Stage or 4-Stage) Detectivity D*: ≥2.0x107 to ≥1.0×1012 cm·Hz1/2/W (λpeak, 20 kHz), ≥1.0×107 to ≥8.0×1011 cm·Hz1/2/W (λopt, 20 kHz) Different Sizes of Active/Optical Area A(O): 0.05×0.05 mm² to 4×4 mm² Current Responsivity Ri(λopt): ≥0.1 to ≥1.5 A/W Current Responsivity-Active (Optical) Area Length Product Ri(λopt)·L(O) (PVM, PVMI (Non-TE), PEM, PEMI Series): ≥0.002 to ≥0.04 A·mm/W Resistance R (PVM, PVMI, PEM, PEMI Series): 20 to 1,500 Ω Resistance-Active (Optical) Area Product (RxA(O)): ≥0.0001 to ≥30,000 Ω·cm2 Short Time Constant τ: ≤1.5 ns (PVM, PVMI), ≤1.2 ns (PEM, PEMI) to ≤350 ns No Bias Required PV, PVI Series Bandwidth: Tens of MHz Without Reverse Bias, ≥1GHz With Reverse Bias No 1/f Noise Active Element Temperature Tdet: ~195 to ~230 K (TE-cooled Versions) Different Acceptance Angles Φ: ~36° to ~124° Different Packages: TO39, BNC, TO8, TO 66, PEM-SMA, PEM-TO8 Different Infrared Windows: None, wAl2O3, wZnSeAR Wide Range of Dedicated Preamplifiers and Accessories Available Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense

2-5.5 µm; Active Area 0.01, 1 mm²; Responsivity ≥1.3-≥1.5 A/W; Detectivity ≥5.0x108-5.0×1011 cm·Hz1/2/W; Resistance ≥70 Ω-≥200 kΩ; Package TO39, TO8 Vigo System’s PVA and PVIA series feature photovoltaic detectors (photodiodes) in which the semiconductor layer is made of InAs or InAsSb materials. Absorbed photons produce charge carriers that are collected within the diodes. Photovoltaic detectors have complex current/voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage. PVA/PVIA series detectors are cadmium and mercury free. As a result, the detectors comply with the RoHS directive and can be used in the consumer market. Vigo System’s PVA series features 2.0 µm to 5.5 μm ambient temperature, uncooled IR photovoltaic detectors based on InAs1-xSbx alloys (epitaxial InAs or InAsSb hetereostructure). The devices are temperature stable up to +300 °C and mechanically durable. PVA series devices are also available thermoelectrically cooled by two-stage TEC structures (PVA-2TE series) with a 3° wedged sapphire (wAl2O3) window preventing unwanted interference effects. The PVIA series of 2.0 µm to 5.5 μm InAs/InAsSb IR photovoltaic detectors is optically immersed in order to further improve the parameters of the devices and also available either as uncooled, ambient temperature detectors or as two-stage thermoelectrically cooled (PVIA-2TE series) variants, again with a 3° wedged sapphire (wAl2O3) window that prevents unwanted interference effects. For its range of PVA/PVIA InAs/InAsSb photovoltaic detectors, Vigo System provides a broad range of configurable line infrared (IR) detection modules that integrate the IR photodetector with the preamplifier and – depending on the module series – also signal processing electronics, optics, heat dissipation systems and other components in a common package. Key Features: Active Element Material: Epitaxial InAs or InAsSb Hetereostructure Mechanically Durable Spectral Range: 2 µm to 5.5 μm Cut-on Wavelength λcut-on (10%): 2.1 to 2.4 μm ±0.2 µm Peak Wavelength λpeak: 2.9 to 4.7 μm ±0.3 µm Cut-off Wavelength λcut-off (10%): 3.4 to 5.5 μm ±0.2 µm Detectivity D*: ≥5.0x108 to ≥5.0×1011 cm·Hz1/2/W (λpeak) Current Responsivity Ri(λpeak): ≥1.3 to ≥1.5 A/W Temperature Stable up to +300 °C Uncooled, Room Temperature Operation or 2-Stage Thermoelectrically (TE) Cooled Versions Active Element Temperature Tdet: ~230 K (TE-cooled Versions) Complying With the RoHS Directive Size of Active Area A: 0.1×0.1 mm², 1x1 mm² Resistance R (PVM, PVMI, PEM, PEMI Series): ≥70 Ω to ≥200 kΩ Time Constant τ: ≤5 to ≤60 ns No Bias Required No 1/f Noise Sensitive to IR Radiation Polarisation Immersion Microlens Technology Available (PVIA Series) Acceptance Angle Φ: ~36°, ~70°, ~90° Package: TO39, TO8 Infrared Windows: None, wAl2O3 Wide Range of Dedicated Preamplifiers and Accessories Available Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense

2-12 µm; Active Area 1 mm²; Responsivity ≥0.002 A/W; Detectivity ≥9.0×106-≥2.0×107 cm·Hz1/2/W; Resistance 30-≤240 Ω; Package TO8 Vigo System’s PVMQ and PCQ series comprise of HgCdTe (MCT) infrared (IR) detectors whose active surface consists of more than two elements. The offer includes quadrant geometry detectors based on photodiodes and photoconductors, ideally suited for defense and security applications as well as XY or differential measurements. PVMQ and PCQ are 2 µm to 11 μm uncooled, ambient temperature IR detectors, based on sophisticated HgCdTe heterostructures for the best performance and stability. These quadrant detectors consist of four separate active elements arranged in a quadrant geometry and optimized for maximum performance at 10.6 μm. The main application of PVMQ/PCQ detectors is laser beam profiling and positioning. PVMQ is a photovoltaic multiple junction quadrant IR detector, while PCQ is a photoconductive quadrant IR detector. The PCQ detector should operate in optimum bias voltage and current readout mode, and its performance at low frequencies is reduced due to 1/f noise. Key Features: Active Element Material: Epitaxial HgCdTe Heterostructure Wide Spectral Range: 2 to 12 μm Optimal Wavelength λopt: 10.6 μm Active Area: up to 4×4 mm2 No Bias Required (PVMQ) No 1/f Noise (PVMQ) Long Lifetime and MTBF (PCQ) Stability and Reliability Short Time Constant τ: ≤1.5 ns (PVMQ), ≤5 ns (PCQ) Operation From DC to High Frequency (PVMQ) Sensitive to IR Radiation Polarisation (PVMQ) Uncooled, Room Temperature Operation Detectivity D*: ≥1.9x107, ≥2.0x107 cm·Hz1/2/W (λpeak, 20 kHz), ≥9.0×106, ≥1.0×107 cm·Hz1/2/W (λopt, 20 kHz) Active Area A of Single Element: 1×1 mm² Distance between Elements: 20 µm, 200 µm Current Responsivity Ri(λopt): ≥0.002 A/W (PVMQ) Current Responsivity-Active Area Length Product Ri(λopt)·L: ≥0.001 A·mm/W (PCQ) Resistance R: 30 to ≤240 Ω Acceptance Angle Φ: ~70° Package: TO8 Window: None Applications: Laser Beam Profiling and Positioning; Defense & Security; XY or Differential Measurements; Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting

2-12 µm; Active Area 0.0025, 1 mm²; Responsivity ≥5.0x101-≥6.5x104 V/W; Detectivity ≥5.0×106-≥2.3×1010 cm·Hz1/2/W; Power Supply +5,+9 VDC Vigo System’s UM, LabM, UHSM and MicroM selected line series of infrared (IR) detection modules integrate the infrared photodetector with signal processing electronics, optics, heat dissipation systems and other components in a common package – resulting in very convenient and user‑friendly devices that can be easily used in a variety of MWIR/LWIR applications. This integration makes the detectors less vulnerable to over-bias, electrostatic discharge, electromagnetic interference (EMI) and other environmental exposures. Additional advantages of the integration are improved high-frequency (HF) performance, output signal standardization, miniaturization, and cost reduction. Vigo System’s selected product line guarantees a short order fulfillment date and an effective price. Vigo System offers detection modules with an infrared detector optimized for uncooled operation or for temperatures achievable with Peltier-coolers in the spectral range from 2 µm to 12 μm. IR radiation emitted by an object is concentrated on the active area of an IR detector, generating photoelectric signals which are sensed by the front-end electronics (FEE). The front-end electronics circuitry is typically used to: Provide optimum conditions for the operation of IR detectors (to achieve high sensitivity, fast response, and a wide dynamic range. This is typically achieved with optimized constant voltage bias and current mode of the photoelectric signal readout.) Protect detector elements against overbias Amplify the signal within the required frequency band. This could be done with a minimized contribution of the preamplifier noise to the resulting noise of the detection module. In addition to front-end electronics, detection modules may include additional electronic blocks for signal conditioning, such as gain blocks, filters, thermoelectric cooler controllers, analog-digital converters (ADC) and other components. Except for MicroM, these IR detection modules feature 3° wedged zinc selenide anti-reflection coated windows preventing unwanted interference effects. Vigo System’s UM series features universal „all-in-one” 3.0 µm to 6.7 μm and DC to 1 MHz (UM-I-6) as well as 2 µm to 12 μm and DC to 70(100) MHz (UM-(I-)10.6) HgCdTe IR detection modules. A thermoelectrically cooled (for some models optically immersed) photovoltaic detector, based on HgCdTe heterostructure, is integrated with a transimpedance, DC-coupled preamplifier, a fan and a thermoelectric cooler controller in a compact housing. Vigo System’s LabM series of programmable detection modules enable control of many parameters, such as bandwidth and gain, even during normal operation. This opens up completely new possibilities to designers of measuring systems. In a fully analogue input circuit, many switching elements are used, even with a variable, digitally-controlled capacitance to compensate the transimpedance input stage. Within the LabM series, 3.0 µm to 7.5 μm and over 200 MHz (LabM-I-6) and 2 µm to 12 μm and DC to 100 MHz (LabM-I-10.6 ) HgCdTe programmable, laboratory IR detection modules are available, with optically immersed photovoltaic detectors based on HgCdTe heterostructure, integrated with a transimpedance, programmable preamplifier. Vigo System’s UHSM series of convenient and user‑friendly ultra-high-speed detection modules aims at LWIR applications requiring high-time-resolution or high-frequency-bandwidth optical detection. Electronics and mechanics have been designed specifically to support the propagation of high-speed signals. Within the UHSM series, 3 µm to 12 µm and over 1 GHz (UHSM-10.6) or 700 MHz (UHSM-I-10.6) HgCdTe ultra high speed „all-in-one” IR detection modules are available. Thermoelectrically cooled, photovoltaic detectors (optically immersed for UHSM-I-10.6), based on HgCdTe heterostructure, are integrated with a transimpedance, AC coupled preamplifier, a fan and a thermoelectric cooler controller in a compact housing. Vigo System’s MicroM is a micro-size detection module with uncooled photovoltaic multiple junction detector. It is optimized for operation in the spectral range from 2 μm to 12 μm and frequency bandwidth from DC to 10 MHz. It is easy to assemble in space-limited measuring systems for long wavelength infrared (LWIR) applications. Key Features: Very High Performance and Reliability Integrated TEC Controller and Fan (UM, UHSM) Very Small Size (MicroM) Single Power Supply: +5 VDC, +9 VDC DC Monitor (UM, SHSM) DC Offset Compensation (LabM) Parameters Configurable by the User (LabM): Output Voltage Offset; Gain (in 40 dB Range); Bandwidth (1.5 MHz/15 MHz/200 MHz); Coupling AC/DC; Detector’s Parameters (Temperature, Reverse Bias etc.) Sensitive to IR Radiation Polarization (UM(-I)-10.6, ) LabM-I-10.6, MicroM) Optimized for Effective Heat Dissipation Wide Frequency Bandwidth Over 1 GHz (UHSM) Compatible With Optical Accessories Cost-effective OEM Version Available Universal, Versatile & Flexible, Convenient to Use Fast Delivery Active Element Material: Epitaxial HgCdTe Hetereostructure Active (Optical) Area: 1x1 mm², 0.05x0.05 mm² Cut-on Wavelength λcut-on (10%): ≤2.0 to 3.0 μm Peak Wavelength λpeak: 5.2 to 9.5 μm Optimum Wavelength λopt: 6.0 to 10.6 μm Cut-off Wavelength λcut-off (10%): 6.7 to 12.5 μm Detectivity D*: ≥1.50x107 to ≥2.3×1010 cm·Hz1/2/W (λpeak), ≥5.0×106 to ≥1.5×1010 cm·Hz1/2/W (λopt) Output Noise Density vn (100 kHz): ≤70 nV/Hz1/2 to ≤400 µV/Hz1/2 Voltage Responsivity Rv: ≥1.2x102 to ≥6.5x104 V/W (λpeak), ≥5.0x101 to ≥3.6x104 V/W (λopt) Low Cut-off Frequency flo: DC to 300 Hz High Cut-off Frequency fhi: ≥1 MHz to ≥1.0 GHz Infrared Windows: None, wZnSeAR Acceptance Angle Φ: ~36° to ~85° Applications: Leak Detection; Gas Detection, Monitoring and Analysis (CO, CO2, NH3, NOx); CO2 Laser Measurements; Laser Power Monitoring & Control; Laser Beam Profiling & Positioning; Laser Calibration; Characterization of Pulsed Laser Sources; Flue Gas Denitrification; Fuel Combustion Monitoring at Power Plants and Other Industrial Facilities; Breath Analysis; Explosion Prevention; Contactless Temperature Measurement & Control; Semiconductor Manufacturing; Glucose Monitoring; Dentistry; Dual-comp Spectroscopy; Heterodyne Detection; LIDAR; Object Scanners; Time-resolved Fluorescence Spectroscopy; Free-space Optical Communication