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PVMQ/PCQ HgCdTe (MCT) Infrared Detector Arrays

Product information "PVMQ/PCQ HgCdTe (MCT) Infrared Detector Arrays"

2-12 µm; Active Area 1 mm²; Responsivity ≥0.002 A/W; Detectivity ≥9.0×106-≥2.0×107 cm·Hz1/2/W; Resistance 30-≤240 Ω; Package TO8

Vigo System’s PVMQ and PCQ series comprise of HgCdTe (MCT) infrared (IR) detectors whose active surface consists of more than two elements. The offer includes quadrant geometry detectors based on photodiodes and photoconductors, ideally suited for defense and security applications as well as XY or differential measurements.

PVMQ and PCQ are 2 µm to 11 μm uncooled, ambient temperature IR detectors, based on sophisticated HgCdTe heterostructures for the best performance and stability. These quadrant detectors consist of four separate active elements arranged in a quadrant geometry and optimized for maximum performance at 10.6 μm. The main application of PVMQ/PCQ detectors is laser beam profiling and positioning.

PVMQ is a photovoltaic multiple junction quadrant IR detector, while PCQ is a photoconductive quadrant IR detector. The PCQ detector should operate in optimum bias voltage and current readout mode, and its performance at low frequencies is reduced due to 1/f noise.

Key Features:

  • Active Element Material: Epitaxial HgCdTe Heterostructure
  • Wide Spectral Range: 2 to 12 μm
  • Optimal Wavelength λopt: 10.6 μm
  • Active Area: up to 4×4 mm2
  • No Bias Required (PVMQ)
  • No 1/f Noise (PVMQ)
  • Long Lifetime and MTBF (PCQ)
  • Stability and Reliability
  • Short Time Constant τ: ≤1.5 ns (PVMQ), ≤5 ns (PCQ)
  • Operation From DC to High Frequency (PVMQ)
  • Sensitive to IR Radiation Polarisation (PVMQ)
  • Uncooled, Room Temperature Operation
  • Detectivity D*: ≥1.9x107, ≥2.0x107 cm·Hz1/2/W (λpeak, 20 kHz), ≥9.0×106, ≥1.0×107 cm·Hz1/2/W (λopt, 20 kHz)
  • Active Area A of Single Element: 1×1 mm²
  • Distance between Elements: 20 µm, 200 µm
  • Current Responsivity Ri(λopt): ≥0.002 A/W (PVMQ)
  • Current Responsivity-Active Area Length Product Ri(λopt)·L: ≥0.001 A·mm/W (PCQ)
  • Resistance R: 30 to ≤240 Ω
  • Acceptance Angle Φ: ~70°
  • Package: TO8
  • Window: None

Applications: Laser Beam Profiling and Positioning; Defense & Security; XY or Differential Measurements; Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting

Manufacturer "Vigo Photonics"

Vigo Photonics is a world-leading manufacturer of uncooled infrared (IR) photon detectors. Vigo Photonics' origins go back to a team of researchers at the Military University of Technology in Warsaw, Poland, that developed a special technique for manufacturing detectors operating without cryocooling. The company’s unique position on the market is confirmed by the status of an official supplier of subassemblies for NASA, resulting in Vigo Photonics detectors being installed on the Curiosity rover exploring the surface of Mars.


With its headquarters located near Warsaw, Poland, Vigo Photonics provides a broad portfolio of photoconductive and photovoltaic IR detectors based on materials like HgCdTe (MCT) or InAs/InAsSb. Further detector product ranges offered by Vigo Photonics are superlattice detectors or IR detector arrays. Beyond the detector components, various series of selected line or configurable line infrared (IR) detection modules are available, providing the infrared photodetector integrated with signal processing electronics, optics, heat dissipation systems and other components in a common package.

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PC/PCI HgCdTe (MCT) Photoconductive Detectors
1-15 µm; Active Area 0.000625-16 mm²; Detectivity ≥9.0×106- 4.0×1010 cm·Hz1/2/W; Resistance ≤120-≤1,200 Ω; Package TO39, BNC, TO8, TO 66 Vigo System’s PC/PCI range of photoconductive detectors is based on the photoconductive effect. Infrared radiation generates charge carriers in the semiconductor active region decreasing its resistance. The resistance change is sensed as a current change by applying a constant voltage bias. The PC/PCI series devices are characterized by near linear current-voltage characteristics. The electric field in photoconductors is constant across the device. These components are based on sophisticated HgCdTe heterostructures for the best performance and stability and optimized for the maximum performance at λopt. Vigo System’s PC series features 1 µm to 12 μm HgCdTe uncooled, ambient temperature IR photoconductive detectors. The devices should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The 1/f noise corner frequency increases with the cut-off wavelength. PC series devices are also available thermoelectrically cooled by two-stage (PC-2TE series), three-stage (PC-3TE series) or even four-stage (PC-4TE series) TEC structures, resulting in 1 µm to 14 μm (PC-2TE), 1 µm to 15 μm (PC-3TE) or 1 µm to 16 µm (PC-3TE) HgCdTe photoconductive detectors. These series are protected by a 3° wedged sapphire (wAl2O3, PC-2TE) or zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. The PCI series is optically immersed in order to further improve the parameters of the devices. This series’ cut-on wavelength is limited by GaAs transmittance (~0.9 μm). Corresponding to the PC series, PCI series components are also available either as 1 µm to 12 μm HgCdTe uncooled, ambient temperature IR photoconductive detectors or as 1 µm to 15 µm (PCI-4TE: 16 µm) HgCdTe photoconductive detectors that are thermoelectrically cooled by two-stage (PCI-2TE series), three-stage (PCI-3TE series) or even four-stage (PCI-4TE series) TEC structures, again with a 3° wedged sapphire (wAl2O3, PC-2TE) or wedged zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. For its range of PC/PCI HgCdTe (MCT) photoconductive detectors, Vigo System provides a broad range of selected line or configurable line infrared (IR) detection modules that integrate the IR photodetector with the preamplifier and – depending on the module series – also signal processing electronics, optics, heat dissipation systems and other components in a common package. Key Features: High Detectivity Low Speed High Stability and Reliability, Long Lifetime and MTBF 1/f Noise Corner Frequency fc: ≤10 kHz to ≤20 kHz Active Element Material: Epitaxial HgCdTe Heterostructure Optimal Wavelength λopt: 5.0 to 14.0 μm With or Without Immersion Microlens Technology Uncooled, Room Temperature Operation or Thermoelectrically Cooled (2-Stage, 3-Stage or 4-Stage) Detectivity D*: ≥1.9x107 to ≥4.0×1010 cm·Hz1/2/W (λpeak, 20 kHz), ≥9.0×106 to ≥2.0×1010 cm·Hz1/2/W (λopt, 20 kHz) Different Sizes of Active/Optical Area A(O): 25×25 µm² to 4×4 mm² Current Responsivity-Active (Optical) Area Length Product Ri(λopt)·L(O): ≥0.001 to ≥3.0 A·mm/W Time Constant τ: ≤2 ns to ≤20,000 ns Bias Voltage Active Area Length Ration Vb/L: ≤0.15 V/mm to ≤24.5 V/mm Resistance R: ≤120 to ≤1,200 Ω Active Element Temperature Tdet: ~195 to ~230 K (TE-cooled Versions) Different Acceptance Angles Φ: ~36° to ~124° Different Packages: TO39, BNC, TO8, TO 66 Different Infrared Windows: None, wAl2O3, wZnSeAR Wide Range of Dedicated Preamplifiers and Accessories Available Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense
Product number: SW11680
Manufacturer: