Product Portfolio
AMS Technologies offers a broad variety of NIR (near infrared) and MWIR (midwave infrared) detectors and arrays that are based on lead sulfide (PbS) or lead selenide (PbSe). These detectors cover a wide spectral range with wavelengths from 1 µm to 5 µm, which is highly relevant for applications in inline or mobile process analytics, quality control and gas sensing.
The PbS near-infrared (NIR) detectors are available as single-pixel, multi-single-pixel and multi-pixel versions. Packaging options include bare chips (protected by thin-film encapsulation and enabling small, flexible and very efficient devices), bare chips wire-bonded on PCB, or TO packages with double encapsulation, with an optional integrated single- or two-stage TEC (thermoelectric cooler) for increased detectivity and sensitivity at larger wavelengths.
The series of PbS line array detectors encompasses bare chips or encapsulated modules, with up to 512 pixels and a pitch starting from 50 µm. PbS bare chip line array detectors can be directly wire-bonded to printed circuit boards, while PbS module line array NIR detectors combine PbS detector array, TEC temperature stabilization and corresponding read-out electronics in a hermetic package.
A series of single-pixel PbSe detectors is available uncooled as well as with integrated TEC, with different geometries and packaging solutions (SMD or TO package) – and optional accessories like corresponding preamplifier boards.
AMS Technologies’ portfolio also includes a series of bare chip and TO package PbSe NIR detectors, available as single-pixel, multi-single-pixel (bare chips on small, pre-bonded, solderable adapter PCBs) and multi-pixel versions (multiple pixels in line or matrix design, realized directly on the substrate). The bare chips are protected by a unique thin-film encapsulation for longer lifetime and highest detectivity at room temperature, while TO-packaged single-pixel versions feature an optional integrated single- or two-stage TEC for increased detectivity and sensitivity at larger wavelengths.
Three different evaluation kits (single pixel, multi pixel and line array) for the PbS and PbSe detectors are available, enabling users to easily compare different varieties of the detectors and to quickly develop circuit designs for their applications.
Related Products
Complementing our PbS and PbSe detectors and arrays, we also offer a broad range of additional discrete detectors and arrays based on other materials like silicon (for visible to near-IR wavelengths) or InGaAs (for typical NIR wavelengths used in optical communications). Other discrete detectors and arrays available from AMS Technologies include devices based on materials like HgCdTe, InAs/InAsSb or GaAs, but also balanced photodetectors, integrated optical receiver modules or infrared detection modules.
For detecting or recording even larger two-dimensional arrays of pixels, have a look at our range of cameras, including IR cameras, CCD and CMOS cameras and x-ray cameras.
Guiding and focusing light onto optical detectors can be done using AMS Technologies’ broad portfolio of optics components like optical lenses, optical filters or optical windows, as well as our optical fibers.
Definition
Lead sulfide (PbS) and lead selenide (PbSe) detectors are thin film semiconductor devices that are used as infrared (IR) detectors with a wide useful spectral coverage. PbS and PbSe photodetectors are available in a wide variety of sizes, designs and packages, from hermetically sealed TO packages to bare chips to module line arrays.
PbS detectors are sensitive to light with wavelengths between 1 and 3 µm and thus very well suited for near infrared (NIR) applications like detecting O-H and C-H bonds (showing absorption mainly in the NIR range) and thus allowing the detection and classification of e.g. fatty acids, alcohols, polymers or textiles.
With 1 to 5 µm, a PbSe detector’s sensitivity extends into the mid infrared (MIR) domain, allowing to detect gases like CO2 (monitoring ambient air quality or analyzing breath gas), H2O, CH4, NO or N2O. Both PbS and PbSe detectors can also be used as flame and spark sensors for detecting and preventing fire or characterizing flames.
While detectors based on other materials like silicon or InGaAs are operated as photodiodes, PbS and PbSe detectors utilize the photoconductive effect where infrared radiation hitting the detector lowers the resistance of the sensor’s active area.
Compared to other IR detectors, PbS- and PbSe-based devices show a high detectivity at room temperature. With their relatively low cost per active area, PbS and PbSe are an alternative to IR photodiodes such as InGAas that show less spectral width and often require thermoelectric cooling to reach comparable performance.
Alternative Terms: Lead Sulfide Detector; Lead Selenide Detector; PbS Optical Detector; PbSe Optical Detector; PbS Optical Array; PbSe Optical Array; PbS Detector Module; PbSe Detector Module
Hertzstück™ PbS Bare Chip & Module Line Array NIR Detectors
Wavelength Range 1-3 µm; Time Constant 200 µs Typ.; No. of Pixels 1-512; No. of Lines 1; Min. Pixel Width/Height 20 µm; Dark Resistance 3-30 MΩ; Peak Wavelength 2.7 µm
Hertzstück™ PbS lead salt near-infrared (NIR) line array detectors by trinamiX are available as bare chips or encapsulated modules, with up to 512 pixels and a pitch starting from 50 µm. Further customization is possible. The detectors cover a wide spectral range (wavelength 1 µm to 3 µm), which is highly relevant for applications in inline or mobile process analytics, quality control and gas sensing.
For PbS NIR detectors as single-pixel, multi-single-pixel and multi-pixel versions, please refer to the Hertzstück™ PbS Bare Chip & TO-Package NIR Detectors series.
Due to their unique thin-film encapsulation for longer lifetime and highest detectivity at room temperature, Hertzstück™ PbS bare chip line array NIR detectors can be directly wire-bonded to printed circuit boards.
The Hertzstück™ PbS module line array NIR detectors comprise a 256-pixel PbS array and a corresponding read-out electronics in a hermetic PS28 package. These devices provide frame rates up to 1 kHz and feature thermo electric (TEC) temperature stabilization as well as an analog multiplex output. Optimum transmittance in the accepted wavelength range is ensured by an AR-coated sapphire window. Thanks to their low power consumption, Hertzstück™ PbS array modules are the ideal solution for mobile applications such as handheld spectrometers.
Three different evaluation kits enable users to easily compare different varieties of the Hertzstück™ PbS NIR detectors and to quickly develop circuit designs for their applications.
Key Features:
High Stability and Long Lifetime Through Thin-film Encapsulation
PbS Detector for Wavelengths From 1 to 3 µm
Peak Detectivity at Room Temperature (620 Hz, 1 Hz): 1 x 1011 cm·Hz½/W Typical
Readily Available in Large Scale
Very High Sensitivity
Suitable for Automated Wire-bonding (Bare Chip Version)
Double Encapsulation: Thin-film and PS28 Housing With Sapphire Window (Module Version)
1-Stage Thermoelectric Cooler (TEC) Included (Module Version)
Minimum Pixel Width/Height: 20 µm
Minimum Pixel Pitch: 50 µm
Minimum Chip Length/Height: 3 mm
Number of Pixels: 1-512
Peak Wavelength: 2.7 µm Typical
20% Cut-off Wavelength: 2.9 µm Typical
Time Constant: 200 µs Typical
Dark Resistance: 3-30 MΩ
Applications: NIR Spectroscopy; Fire & Spark Detection; Flame Monitoring; Moisture Monitoring
Product number:
SW11641
Manufacturer:
Trinamix
Hertzstück™ PbS Bare Chip & TO-Package NIR Detectors
Wavelength Range 1-3 µm; Active Area per Pixel 0.5x0.5-10x10 mm; Time Constant 200 µs Typ.; No. of Pixels 1-16; No. of Lines 1-4; Min. Pixel Width/Height 20, 1,000 µm; Dark Resistance 0.3-15 MΩ; Peak Wavelength 2.7 µm
Hertzstück™ PbS lead salt near-infrared (NIR) detectors by trinamiX are available as single-pixel, multi-single-pixel and multi-pixel versions. For PbS NIR detector line arrays, please refer to the Hertzstück™ PbS Bare Chip & Module Line Array NIR Detectors series. The detectors cover a wide spectral range, which is highly relevant for applications in inline or mobile process analytics, quality control and gas sensing. The bare chips of trinamiX’ Hertzstück™ series PbS lead salt near-infrared (NIR) detectors and detector arrays are protected by a unique thin-film encapsulation for longer lifetime and highest detectivity at room temperature. Bare-chip solutions enable small, flexible and very efficient devices and can be directly wire-bonded to printed circuit boards. Single- and multi-single-pixel versions are also available on small, pre-bonded, solderable adapter PCBs, allowing customers without wire-bonding expertise or capabilities to benefit from the detectors’ patented thin-film encapsulation, pick and place compatibility, small footprint and large field of view. Direct access to the thin-film encapsulated sensor surface without lossy entrance windows is crucial for compact solutions, applications with low signal levels, or optimal coupling with optical fibers. The adapter PCBs come in various sizes starting at 5 x 6 mm and a module height of 1 mm. Four castellated holes on the outer PCB edges serve as solder pads and make it possible to mount these detector modules directly onto any system PCB. Beyond bare chip versions, the Hertzstück™ PbS series single-pixel NIR detectors are also available housed in TO-packages with double encapsulation – not only protected by a standard TO package, but also by the thin-film encapsulation directly on the chip.
TO-packaged PbS single-pixel NIR detectors are as well offered with an integrated thermoelectric cooler (TEC). All TEC-based trinamiX detectors incorporate a thermistor which allows for a precise temperature stabilization of the active element. The single- and two-stage TECs provide for operation at extremely low temperatures for increased detectivity and sensitivity at larger wavelengths independent of the ambient conditions.
Hertzstück™ PbS multi-single-pixel bare chip NIR detectors consist of 2 to 16 single pixels in line or matrix design, wire-bonded on PCB. The usage of single pixel detectors enables high flexibility regarding setup and filters.
Hertzstück™ PbS multi-pixel bare chip NIR detectors consist of 2 to 16 pixels in line or matrix design, realized directly on the substrate. This technology provides high durability for rugged operation as well as bondable electrodes for COB mounting and is suitable for automated wire-bonding.
Three different evaluation kits enable users to easily compare different varieties of the Hertzstück™ PbS NIR detectors and to quickly develop circuit designs for their applications.
Key Features:
Single Pixel, Multi-Single-Pixel and Multi-Pixel Versions available
Small Footprint, High Stability and Long Lifetime Through New Thin-film Encapsulation
Double Encapsulation & Sapphire Window (TO-Package Versions)
Minimum Pixel Width/Height: 0.5 mm (Single-pixel), 1 mm (Multi-single-pixel), 20 µm (Multi-pixel)
Multi-pixel Minimum Chip Length/Height: 3 mm
Active Area per Pixel: 0.5 x 0.5 mm to 10 x 10 mm
Number of Pixels: 2-8 (Multi-single-pixel), 2-16 (Multi-pixel)
Number of Lines: 1-3 (Multi-single-pixel), 1-4 (Multi-pixel)
Bondable Contacts or Solder Pads for PCB Mounting
Compatible With Industry-standard Production Methods
Wavelength Range: 1-3 µm
Peak Wavelength: 2.7 µm
20% Cut-off Wavelength λC: 2.9 µm
Dark Resistance: 0.3-15 MΩ
Room Temperature Operation
Very High Sensitivity
Peak Detectivity at Room Temperature (620 Hz, 1 Hz): 1 x 1011 cm·Hz½/W Typical
Peak Responsivity (Single- & Multi-single-pixel): 0.6x105 to 16x105 V/W Typical
Time Constant: 200 µs Typical
Extensive Quality Control
Applications: Gas Sensing; Gas Detection & Analysis; Moisture Monitoring; Flame & Spark Detection; Flame Monitoring; NIR Spectroscopy; Temperature Measurement; Rapid Prototyping
Product number:
SW11639
Manufacturer:
Trinamix
Hertzstück™ PbS/PbSe NIR Detector Evaluation Kits
Single-Pixel, Multi-Pixel, Line Array Versions; No. of Pixels/Channels 2-256; Detector Bias Voltage 10 V, Adjustable; Sampling Frequency 0.001-48 kHz; Interface USB
Three different trinamiX evaluation kits enable users to easily compare different varieties of the Hertzstück™ NIR detectors and to quickly develop circuit designs for their applications. All evaluation kits are powered and controlled directly over USB and do not need any additional external power supply.
The single-pixel evaluation kit offers two sockets for trinamiX Hertzstück™ PbS and PbSe single-pixel NIR detector developer boards in simultaneous operation. These are available for bonded bare chip detectors as well as TO5 package.
Featuring two input channels, 48 kHz sampling rate and 16 bit resolution, the single-pixel evaluation kit can be powered and controlled directly over USB. All supply voltages are created on-board ensuring noise-free biasing and operation without the need for external precision voltage sources: a true plug-and play solution.
The evaluation kit includes analysis software performing real-time FFT (Fast Fourier Transform) and statistics analysis. Hence the kit directly determines signal and noise characteristics of the sensors, stores measurement data and characterizes detectivity and responsivity with an easy-to-use interface.
The multi-pixel evaluation kit provides a quick and cost-effective way to assess the capabilities of trinamiX’ Hertzstück™ PbS and PbSe multi-pixel infrared detectors up to 16 pixels as well as trinamiX Hertzstück™ PbS and PbSe multi-single-pixel detectors, with line or matrix geometry.
The multi-pixel evaluation kit comes with both a detailed user manual and user-friendly software, which allows for the easy capture of raw data for further analysis as well as for development of the target detection application. Customers can perform a thorough evaluation of the multi-pixel detectors without the need to develop a read-out circuit and software. This can shorten the end-product development process as well as enable better informed decisions on hardware design and component requirements.
Also, for customers with limited experience with photoconductive detectors, the circuit used in the multi-pixel evaluation kit provides the optimal starting point for a fast end-product development. The Multi-Pixel evaluation kit consists of the main PCB (printed circuit board) and an adapter PCB which is plugged into the main PCB at the intended pin socket and can, for instance, be customized to directly fit into a prototype system of the customer.
The line array evaluation kit enables users to easily test the Hertzstück™ bare chip and module line array detectors with 256 pixels and to quickly develop circuit designs for their applications.
Users can adjust the PID values of the on-board thermoelectric controller (TEC). Charge well size is selectable from 1 to 20 pF, and the sampling frequency can be varied from 1 to 1024 Hz, with integration time between 4 µs and 200 ms.
The kit includes analysis software performing real-time FFT (Fast Fourier Transform) and statistics analysis.
Key Features:
Suitable For trinamiX Hertzstück™ PbS and PbSe Detectors
Plug and Play
Supplied by USB Power
Power Supply Voltage: 5 VDC
Read-out and Data Analysis With Standalone Measurement Software
No. of Pixels/Channels: 2 to 256
Detector Bias Voltage: 10 V, Adjustable (Line Array Version)
Sampling Frequency: 1 Hz to 48 kHz
On-board Temperature Sensor (Multi-Pixel Version)
On-board TEC Controller With Adjustable PID Values (Line Array Version)
Selectable Charge Well Size: 1 pF to 20 pF (Line Array Version)
Selectable Integration Time: 4 µs to 200 ms (Line Array Version)
Applications: Evaluation of trinamiX Hertzstück™ PbS/PbSe Single-Pixel, Multi-Single-Pixel, Multi-Pixel and Line Array NIR Detectors
Product number:
SW11642
Manufacturer:
Trinamix
Hertzstück™ PbSe Bare Chip & TO-Package NIR Detectors
Wavelength Range 1-5 µm; Active Area per Pixel 1x1-6x6 mm; Time Constant 4 µs Typ.; No. of Pixels 1-16; No. of Lines 1-4; Min. Pixel Width/Height 20, 1,000 µm; Dark Resistance 0.1-20 MΩ; Peak Wavelength 3.8 µm
Hertzstück™ PbSe lead salt near-infrared (NIR) detectors by trinamiX are available as single-pixel, multi-single-pixel and multi-pixel versions.
These PbSe detectors cover a wide NIR spectral range, which is highly relevant for applications in inline or mobile process analytics, quality control and gas sensing. The bare chips of trinamiX’ Hertzstück™ series PbSe lead salt near-infrared (NIR) detectors and detector arrays are protected by a unique thin-film encapsulation for longer lifetime and highest detectivity at room temperature.
Bare-chip solutions enable small, flexible and very efficient devices and can be directly wire-bonded to printed circuit boards. Single- and multi-single-pixel versions are also available on small, pre-bonded, solderable adapter PCBs, allowing customers without wire-bonding expertise or capabilities to benefit from the detectors’ patented thin-film encapsulation, pick and place compatibility, small footprint and large field of view.
Direct access to the thin-film encapsulated sensor surface without lossy entrance windows is crucial for compact solutions, applications with low signal levels, or optimal coupling with optical fibers. The adapter PCBs come in various sizes starting at 5 x 6 mm and a module height of 1 mm. Four castellated holes on the outer PCB edges serve as solder pads and make it possible to mount these detector modules directly onto any system PCB.
Beyond bare chip versions, the Hertzstück™ PbSe series single-pixel NIR detectors are also available housed in TO-packages with double encapsulation – not only protected by a standard TO package, but also by the thin-film encapsulation directly on the chip.
TO-packaged PbSe single-pixel NIR detectors are as well offered with an integrated thermoelectric cooler (TEC). All TEC-based trinamiX detectors incorporate a thermistor which allows for a precise temperature stabilization of the active element. The single- and two-stage TECs provide for operation at extremely low temperatures for increased detectivity and sensitivity at larger wavelengths independent of the ambient conditions.
Hertzstück™ PbSe multi-single-pixel bare chip NIR detectors consist of 2 to 16 single pixels in line or matrix design, wire-bonded on PCB. The usage of single pixel detectors enables high flexibility regarding setup and filters.
Hertzstück™ PbSe multi-pixel bare chip NIR detectors consist of 2 to 16 pixels in line or matrix design, realized directly on the substrate. This technology provides high durability for rugged operation as well as bondable electrodes for COB mounting and is suitable for automated wire-bonding.
Three different evaluation kits enable users to easily compare different varieties of the Hertzstück™ PbSe NIR detectors and to quickly develop circuit designs for their applications.
Key Features:
Single Pixel, Multi-Single-Pixel and Multi-Pixel Versions available
Small Footprint, High Stability and Long Lifetime Through New Thin-film Encapsulation
Double Encapsulation & Sapphire Window (TO-Package Versions)
Minimum Pixel Width/Height: 1 mm (Single- & Multi-single-pixel), 20 µm (Multi-pixel)
Multi-pixel Minimum Chip Length/Height: 3 mm
Active Area per Pixel: 1 x 1 mm to 6 x 6 mm
Number of Pixels: 2-8 (Multi-single-pixel), 2-16 (Multi-pixel)
Number of Lines: 1-3 (Multi-single-pixel), 1-4 (Multi-pixel)
Bondable Contacts or Solder Pads for PCB Mounting
Compatible With Industry-standard Production Methods
Wavelength Range: 1-5 µm
Peak Wavelength: 3.8 µm
20% Cut-off Wavelength λC: 4.5 µm
Dark Resistance: 0.1-20 MΩ
Room Temperature Operation
Peak Detectivity at Room Temperature (620 Hz, 1 Hz): 1.8 x 1010 cm·Hz½/W Typical
Peak Responsivity (Single- & Multi-single-pixel): 8x103 to 4.5x104 V/W Typical
Time Constant: 4 µs Typical
Extensive Quality Control
Applications: Gas Sensing; Gas Detection & Analysis; Moisture Monitoring; Flame & Spark Detection; Flame Monitoring; NIR Spectroscopy; Temperature Measurement; Rapid Prototyping
Product number:
SW11640
Manufacturer:
Trinamix
LEPTON Series Single-pixel VPD PbSe MWIR Detectors
Wavelength Range 1.0-5.0 µm MWIR; Detector Size 1x1, 2x2 mm; Time Constant <2 µs; Responsivity 9x103, 4.5x103 V/W; Element Resistance 0.1-2.0 MΩ
New Infrared Technologies’ (NIT) LEPTON Series of single-pixel VPD PbSe MWIR detectors are available uncooled as well as with integrated TECs (thermoelectric cooling elements), with different geometries, packaging solutions and preamplifier boards. LEPTON Series single-pixel detectors come in two standard sizes: 1 mm × 1 mm or 2 mm × 2 mm.
LEPTON Series uncooled single-pixel PbSe MWIR detectors can be ordered packaged in SMD or TO-5 housings (with cap, hermetic) with sapphire window. These detectors are operational at room temperature and don’t require any cooling devices.
LEPTON Series cooled single-pixel PbSe MWIR detectors are hermetically packaged in a TO-8 can housing with cap and sapphire window and include one or two thermoelectric cooler (TEC) stages for higher sensitivity as well as a thermistor. A calibration curve for the thermistor is available.
NIT’s LEPTON Series also includes two low-noise preamplifier boards that are 5-V-powered via mini-USB connector: The LEPTON ANALOG PREAMP provides rotary switches to manually select the detector biasing voltage (4 steps from 1.25 V to 10 V) as well as the transimpedance gain (4 steps from 104 to 107 V/A). This preamp outputs a ±10 V analog voltage on a BNC connector. The LEPTON PREAMP WITH USB OUTPUT allows to digitally select the values for detector biasing voltage and transimpedance gain via software. Here, the output is a digital 14 Bit signal with a maximum sampling rate of 20 ksps. This preamp also features an analog output for the preamplifier stage on SMB or BNC connector.
For more pixels, linear and two-dimensional array MWIR cameras are available from New Infrared Technologies – please refer to the LUXELL series of linear array MWIR cameras and TACHYON series of high-speed imaging MWIR cameras respectively.
Key Features:
Detector Sensing Material: VPD Polycrystalline PbSe
Uncooled and TEC-cooled (1-stage, 2-stages) Versions Available
Square Pixels, Available Pixel Geometries: 1 x 1 mm, 2 x 2 mm
Packaging: SMD (10x10 mm) Non-hermetic, TO-5 (9.14 mm Dia.) Hermetic With Cap, TO-8 (15.24 mm Dia.) Hermetic With Cap
Sapphire Window
IR Detection Band: MWIR, 1.0 µm to 5.0 µm
Peak Wavelength of Detection: 3.7 µm
D* (λpeak) Uncooled: 2x109 Jones Typical
D* (λpeak, 1,000 Hz, 1.2 Hz) Cooled: 1x1010 Jones
Time Constant: <2 µs
Biasing Voltage: 5 V, 10 V Typical
Element Resistance: 0.1 to 2.0 MΩ
Responsivity (@Vb = 10 V): 9x103 V/W (1x1 mm), 4.5x103 V/W (2x2 mm)
Power: 1 mW
Read-out Electronics External (Not Included)
Customizable
Operating Temperature: +5 °C to +70 °C (SMD), -40 °C to +85 °C (TO-5, TO8)
Amplifier Board Transimpedance Gain: 104 to 107 V/A, Adjustable Manually or per Software
Amplifier Board Dark Current Cancellation: 1.24 µA to 1 mA, Adjustable Manually or per Software
Amplifier Board Power Supply: 5 VDC, 60 mA (mini-USB Connector)
Amplifier Board Output: Analog (±10 V), Digital (14 Bit)
Amplifier Board Noise: 5 pA @1 kHz, 107 V/A
Amplifier Board Dimensions: 75.90 x 35.10 x 28.70 mm (Analog), 89.30 x 35.10 x 26.30 mm (USB Output)
Applications: Gas & Flame Detection; Laser Detection
Product number:
SW11625
Manufacturer:
New Infrared Technologies (NIT)
PbS Room Temperature Detectors
Peak Wavelength Response 2.2, 2.5 µm; Active Area 0.25-10 mm²; Time Constant <100->300 µs; Resistance 0.2-10 MΩ; Typ. Bias Voltage 10-500 VDC
New England Photoconductor’s range of lead sulfide (PbS) plate cells series for room temperature applications is available as “open” A, B, and C detectors, as well as hermetically sealed (AM, BM, CM). These detectors in TO-3, TO-5, TO-8, and TO-46 packages feature standard size active areas ranging from 0.25 mm² to 10 mm² – special sizes are available upon request. C Series components can be gridded for low resistance. The PbS room temperature detectors can be supplied with or without leads.
Code Number
Active Area
Typ. Bias Voltage
Typ. VW-1 Responsivity
Package Size
.25
0.25 mm²
10 VDC
8-10 x 105
TO-5 & TO-46
.5
0.5 mm²
20 VDC
7-9 x 105
TO-5 & TO-46
1
1 mm²
50 VDC
5-8 x 105
TO-5 & TO-46
2
2 mm²
100 VDC
2-6 x 105
TO-5
3
3 mm²
150 VDC
1-3 x 105
TO-5
5
5 mm²
250 VDC
0.9-2 x 105
TO-8
10
10 mm²
500 VDC
4-8 x 104
TO-3
Key Features:
Hermetically Sealed Packages
Room Temperature Operation
Custom Wavelength Response
Custom Test Procedure
Active Area: 0.25 mm² to 10 mm²
D* Relative Sensitivity (Pk.,600,1): 0.5 x 1011 to 1.2 x 1011
Peak Wavelength Response: 2.2 µm (A & AM,B & BM), 2.5 µm (C & CM)
Time Constant: <100 µs (A & AM), 100 µs to 300 µs (B & BM), >300 µs (C & CM)
Resistance: 0.2 MΩ to 2.0 MΩ (A & AM,B & BM), 0.5 MΩ to 10 MΩ (C & CM)
Hybrid Amplifiers
2 Year Warranty
Filters Available
Product number:
SW11885
Manufacturer:
New England Photoconductor
PbS TE Cooled Detectors
Peak Wavelength Response 2.5-2.7 µm; Active Area 1-10 mm²; Time Constant 800-1800 µs; Resistance 2-15 MΩ; Typ. Bias Voltage 50-500 VDC
New England Photoconductor’s range of thermoelectrically (TE) cooled lead sulfide (PbS) detector series is available as D (1-stage TE cooled, -25°C), D2 (2-stage TE cooled, -35°C), and D21 (2-stage TE cooled, -50°C) types. These detectors in TO-3, TO-5, TO-8, TO-37 and TO-66 packages feature standard size active areas ranging from 1 mm² to 10 mm² – special sizes are available upon request.
Code Number
Active Area
Typ. Bias Voltage
Typ. VW-1 Responsivity
Package Size
-25°C
-35°C
-50°C
1
1 mm²
50 VDC
0.9-1 x 106
1-2 x 106
1.5-2.5 x 106
TO-5, TO-8, TO-37, TO-66
2
2 mm²
100 VDC
6-9 x 105
0.6-1 x 106
0.6-1.2 x 106
3
3 mm²
150 VDC
4-6 x 105
5
5 mm²
250 VDC
2-4 x 105
NA
2-4 x 105
TO-8, TO-66
10
10 mm²
500 VDC
1-2 x 105
NA
TO-3
Key Features:
Hermetically Sealed Packages
Custom Wavelength Response
Custom Test Procedure
Active Area: 1 mm² to 10 mm²
D* Relative Sensitivity (Pk.,600,1): 1.5 x 1011(D), 2.5 x 1011(D2), 2.8 x 1011(D21)
Peak Wavelength Response: 2.5 µm (D1), 2.6 µm (D2), 2.7 µm (D21)
Typ. Time Constant: 800 ms (D), 1200 ms (D2), 1800 ms (D21)
Resistance: 2-10 MΩ (D), 2-12 MΩ (D2), 2-15 MΩ (D21)
Operating Temperature: -25°C (D), -35°C (D2), -50°C (D21)
Cooler Power: 1 V / 2 A (D), 0.8 V / 1.3 A (D2); 1.9 V / 1.4 A (D21)
Custom Design Services
2 Year Warranty
Filters Available
Product number:
SW11886
Manufacturer:
New England Photoconductor
PbSe Room Temperature Detectors
Peak Wavelength Response 3.8 µm; Active Area 1-10 mm²; Time Constant 2-5 µs; Resistance 0.1-4 MΩ; Typ. Bias Voltage 50-500 VDC
New England Photoconductor’s range of lead selenide (PbSe) plate cells series for room temperature applications is available as F (regular performance), FA (medium performance) and FS (high performance) detectors, as well as hermetically sealed (FM, FAM, FSM). These detectors in TO-3, TO-5, TO-8, and TO-46 packages feature standard size active areas ranging from 1 mm² to 10 mm² – special sizes are available upon request.
Code Number
Active Area
Typ. Bias Voltage
Typ. VW-1 Responsivity
Package Size
1
1 mm²
50 VDC
1-4 x 104
TO-5 & TO-46
2
2 mm²
100 VDC
0.5-2 x 104
TO-5
3
3 mm²
150 VDC
0.4-1 x 104
TO-5
5
5 mm²
250 VDC
3-6 x 103
TO-8
10
10 mm²
500 VDC
600
TO-3
Key Features:
Hermetically Sealed Packages
Room Temperature Operation
Custom Wavelength Response
Custom Test
Active Area: 1 mm² to 10 mm²
D* Relative Sensitivity (Pk.,1000,1): 0.1-0.3 x 1010(F&FM), 0.4-0.5 x 1010(FA&FAM), 0.6-1.5 x 1010(FS&FSM)
Typ. Peak Wavelength Response: 3.8 µm
Typ. Time Constant: 2 µs to 5 µs
Resistance: 0.1 MΩ to 4 MΩ
Hybrid Amplifiers
2 Year Warranty
Customized Filters Available
Custom Packages
Product number:
SW11887
Manufacturer:
New England Photoconductor
PbSe TE Cooled Detectors
Peak Wavelength Response 4.3-4.6 µm; Active Area 1-10 mm²; Time Constant 5-20 µs; Resistance 0.2-15 MΩ; Typ. Bias Voltage 50-500 VDC
New England Photoconductor’s range of thermoelectrically (TE) cooled lead selenide (PbSe) detector series comprises of G (1-stage TE cooled, -25°C), G2 (2-stage TE cooled, -35°C), and G21 (2-stage TE cooled, -50°C) types. Beyond this list, a GS21 type PbSE TE cooled detector is available (2-stage TE cooled, -50°C), featuring select high-performance PbSe – contact AMS Technologies for details. Standard active area sizes for these detectors in TO-3, TO-5, TO-8, TO-37 and TO-66 packages range from 1 mm² to 10 mm² – special sizes are available upon request.
Code Number
Active Area
Typ. Bias Voltage
Typ. VW-1 Responsivity
Package Size
-25°C
-35°C
-50°C
1
1 mm²
50 VDC
4-6 x 104
6-10 x 104
10-15 x 104
TO-5, TO-8, TO-37, TO-66
2
2 mm²
100 VDC
2-3 x 104
3-5 x 104
5-8 x 104
3
3 mm²
150 VDC
1-2 x 104
2-3 x 104
3-5 x 104
5
5 mm²
250 VDC
0.8-1 x 104
NA
TO-8, TO-66
10
10 mm²
500 VDC
4-6 x 103
NA
TO-3
.
Key Features:
Hermetically Sealed Packages
Custom Wavelength Response
Custom Test Procedure
Active Area: 1 mm² to 10 mm²
D* Relative Sensitivity (Pk.,1000,1): 1-3 x 1010(G, G2), 2-4 x 1010(G21)
Peak Wavelength Response: 4.3 µm (G), 4.4 µm (G2), 4.6 µm (G21)
Time Constant: 5-10 µs (G), 15 µs (G2), 20 µs (G21)
Resistance: 0.2-7 MΩ (G), 0.2-10 MΩ (G2), 0.2-15 MΩ (G21)
Operating Temperature: -25°C (G), -35°C (G2), -50°C (G21)
Cooler Power: 1.2 V / 2 A (G), 0.8 V / 1.3 A (G2); 2.2 V / 1.2 A (G21)
Custom Design Service
2 Year Warranty
Customized Filters Available
Product number:
SW11888
Manufacturer:
New England Photoconductor