TCube Edge 5A (10-14072-5A-0-F2P3A7) TEC Chiller

Wavelength Range 1.2-2.6 µm; Active Area Diameter 0.5-5 mm; Responsivity 0.80-1.3 A/W; Dark Current 0.03-50 nA; Capacitance 60-3500 pF New England Photoconductor’s range of thermoelectrically (TE) cooled indium gallium arsenide (InGaAs) photodiode series comprises IC1 (1-stage TE cooled, -10°C) or IC2 (2-stage TE cooled, -20°C) versions, suitable for typical wavelengths of 1300 nm or 1550 mm, as well as extended InGaAs PIN photodiodes that can be used for wavelengths up to 2600 nm: IE6C1 C1 (1-stage TE cooled, -10°C) or IE6C2 (2-stage TE cooled, -20°C). Available in several different packaging options like TO-5, TO-8, TO-37, or TO-66, these detectors feature active areas with diameters ranging from 500 µm all the way to 5 mm. Custom filters, windows and packages are available on request. Beyond its range of component-type InGaAs photodiodes, New England Photoconductor also provides the AP300-T2 TE cooled InGaAs infrared sensor in a compact (38 mm diameter x 63.5 mm length) and solid case with flexible mounting options – all that is needed is a DC power supply. Available with active sensor area diameters of 0.5 mm, 1.0 mm and 2.0 mm, the AP300-T2 is an amplified extended InGaAs sensor with a 2-stage thermo-electric cooler (TEC). A low-noise amplifier provides detector-noise limited performance up to 2.6 µm in a compact package. You need an OEM custom configuration? We are happy to help – contact us to discuss your project’s requirements. Part Number IC1-1 IC1-2 IC1-3 IC1-5 IC2-1 IC2-2 IC2-3 IC2-5 TEC Stages 1 2 Active Area Diameter 1 mm 2 mm 3 mm 5 mm 1 mm 2 mm 3 mm 5 mm Responsivity @1300nm Min./Typ. 0.80/0.90 A/W Responsivity @1550nm Min./Typ. 0.90/0.95 A/W Typ. NEP @1550 nm 5.0 x 10-15 W/√Hz 1.0 x 10-14 W/√Hz 2.0 x 10-14 W/√Hz 3.0 x 10-14 W/√Hz 3 x 10-15 W/√Hz 7 x 10-15 W/√Hz 1 x 10-14 W/√Hz 2 x 10-14 W/√Hz Dark Current @1 V Typ./Max 0.07/0.35 nA 0.3/1.5 nA 1.0/5.0 nA 2.5/12.5 nA 0.03/0.15 nA 0.15/0.75 nA 0.5/2.5 nA 1.2/6.0 nA Capacitance @1 V 150 pF 550 pF 1000 pF 3500 pF 150 pF 550 pF 1000 pF 3500 pF Cut-Off Frequency @1V 18 MHz 4 MHz 2 MHz 0.6 MHz 18 MHz 4 MHz 2 MHz 0.6 MHz Shunt Resistance 1500 MΩ 300 MΩ 100 MΩ 30 MΩ 3000 MΩ 600 MΩ 200 MΩ 60 MΩ Max. Reverse Voltage 5 V 2 V 5 V Test Temperature -10°C -20°C Storage Temperature -55 to +85°C Max. Cooler Power 1.0 V @2.0 A 2 V @1.3 A 0.8 V @1.3 A 1.9 V @1.4 A Package Options TO-5, TO-37 TO-8, TO-66 TO-5, TO-37 TO-8, TO-66 Thermistor @+25°C 1 KΩ     Part Number IE6C1-.5 IE6C1-1 IE6C1-2 IE6C2-.5 IE6C2-1 IE6C2-2 TEC Stages 1 2 Active Area Diameter 0.5 mm 1 mm 2 mm 0.5 mm 1 mm 2 mm Responsivity @2300 nm Min./Typ. 0.9/1.3 A/W Dark Current @0.5 V Typ./Max. 0.5/4 nA 1.5/7.5 nA 7.5/40  nA 0.2/0.5 nA 0.8/4 nA 4/50 nA Capacitance @0 V 60 pF 200 pF 800 pF 60 pF 200 pF 800 pF Shunt Resistance @10 mV 15 kΩ 3 kΩ 1 kΩ 400 kΩ 60 kΩ 20 kΩ D* 1 x 1011 cm.√Hz/W 2 x 1011 cm.√Hz/W NEP 4 x 10-13 W/√Hz 7 x 10-13 W/√Hz 1 x 10-12 W/√Hz 3 x 10-13 W/√Hz 5 x 10-13 W/√Hz 9 x 10-13 W/√Hz Spectral Range 1.2-2.57 µm 1.2-2.55 µm Cut-Off Frequency (@0 V, -3dB) 50 MHz 15 MHz 5 MHz 50 MHz 15 MHz 5 MHz Test Temperature -10°C -20°C -20°C -20°C Storage Temperature -40 to +125°C Package Options TO-5, TO-8, TO-37, TO-66   Key Features: Active Area Diameter: 500 µm to 5.0 mm Responsivity @1300 nm (IC1, IC2 Series): 0.80 A/W (Min.), 0.90 A/W (Typ.) Responsivity @1550 nm (IC1, IC2 Series): 0.90 A/W (Min.), 0.95 A/W (Typ.) Responsivity @2300 nm (IE6C1, IE6C2 Series): 0.9 A/W (Min.), 1.3 A/W (Typ.) Max. Dark Current: 0.15 nA to 50 nA (@1 V, 0.5 V) Typ. Dark Current: 0.03 nA to 7.5 nA (@5 V, 1 V) Capacitance: 60 pF to 3500 pF (@0 V, 1 V)