Wavelength Range 1.2-2.6 µm; Active Area Diameter 0.05-5 mm; Responsivity 0.80-1.3 A/W; Dark Current 0.05-100,000 nA; Bandwidth 0.7-40 MHz New England Photoconductor’s range of room temperature indium gallium arsenide (InGaAs) PIN photodiode series comprises of standard versions (I series), suitable for typical wavelengths of 1300 nm or 1550 mm, as well as extended InGaAs PIN photodiodes (IE6 series) that can be used for wavelengths up to 2600 nm. Available in several different packaging options like bare chip, ceramic carrier, TO-5, TO-8 or TO-46 (also lensed), these detectors feature active areas with diameters ranging from 50 µm all the way to 5 mm. Custom filters, windows and packages are available on request. Part Number I-.10 I-.30 I-.50 I-1 I-2 I-3 I-5 Active Area Diameter 100 µm 300 µm 500 µm 1.0 mm 2.0 mm 3.0 mm 5.0 mm Responsivity @1300nm Min./Typ. 0.80/0.90 A/W Responsivity @1550nm Min./Typ. 0.90/0.95 A/W Dark Current Max./Typ.(Min.) 1.0/.05 nA @5 V 5.0/1.0 nA @5 V 25/5 nA @5 V 100/25 nA @5 V 200/50 nA @1 V 500/200 nA @1 V 5000 nA @0.3 V Capacitance Max./Typ.(Min.) 1.2/1.0 pF @5 V 8.0/4.0 pF @5 V 40 pF @0 V 120/80 pF @0 V 500/300 pF@0 V 1000/600 pF@0 V 1500/1000 pF@0 V Min. Bandwidth (50 Ω, -3dB) 2.0 MHz @5 V 0.7 MHz @5 V 0.20 MHz @5 V 40 MHz @5 V 5.3 MHz @0 V 4.0 MHz @0 V 1 MHz @0 V Rise/Fall Time (RL= 50 Ω) 0.1 ns @5 V 0.25 ns @5 V 0.50 ns @5 V 5.0 ns @5 V 50 ns @0V 100 ns @0V 300 ns @0V Resistance (Min./Typ.) - - - 10/50 MΩ 6/30 MΩ 2.0/8 MΩ 25/50 kΩ Typ. NEP @1550 nm 1.5 x 10-15 W/√Hz 5 x 10-15 W/√Hz 8 x 10-15 W/√Hz 0.01 W/√Hz 0.03  W/√Hz 0.05  W/√Hz 0.28  W/√Hz Linear Range (±0.2 dB) - - - 10 dBm 8 dBm Operating Temperature -40 to +85°C Reverse Voltage 25 V 20 V 3 V 2 V Reverse Current 10 mA Forward Current 10 mA Power Dissipation - - - 100 mW 50 mW Package Options Chip, Ceramic Carrier, TO-46 Hermetic, TO-46 Hermetic Lens Chip, Ceramic Carrier, TO-5 Chip, Ceramic Carrier, TO-8     Part Number IE6-.5 IE6-1 IE6-2 Active Area Diameter 500 µm 1.0 mm 2.0 mm Responsivity @2300 nm Min./Typ. 0.9/1.3 A/W Dark Current Typ./Max. 5/50 µA @0.5 V 15/75 µA @0.5 V 75/100 µA @0.5 V Capacitance 60 pF @0 V 200 pF @0 V 800 pF @0 V Shunt Resistance @10 mV 15 kΩ 3 kΩ 1 kΩ D* 5 x 1010 cm.√Hz/W NEP 1 x 10-12 W/√Hz 2 x 10-12 W/√Hz 5 x 10-12 W/√Hz Spectral Range 1.2-2.6 µm Cut-Off Frequency (@0 V, -3dB) 50 MHz 15 MHz 5 MHz Test Temperature +25°C Storage Temperature -40 to +125°C Package Options TO-46, TO-5   Key Features: Active Area Diameter: 50 µm to 5.0 mm Responsivity @1300 nm (I Series): 0.80 A/W (Min.), 0.90 A/W (Typ.) Responsivity @1550 nm (I Series): 0.90 A/W (Min.), 0.95 A/W (Typ.) Responsivity @2300 nm (IE6 Series): 0.9 A/W (Min.), 1.3 A/W (Typ.) Max. Dark Current: 0.07 nA to 5 mA (@5 V, 1 V, 0.3 V) Typ. Dark Current: 0.03 nA to 200 nA (@5 V, 1 V) Min. Bandwidth (@5V, 50 Ω, -3dB): 0.20 GHz to 40 GHz Capacitance: 0.4 pF to 2000 pF

Wavelength Range 1.2-2.6 µm; Active Area Diameter 0.5-5 mm; Responsivity 0.80-1.3 A/W; Dark Current 0.03-50 nA; Capacitance 60-3500 pF New England Photoconductor’s range of thermoelectrically (TE) cooled indium gallium arsenide (InGaAs) photodiode series comprises IC1 (1-stage TE cooled, -10°C) or IC2 (2-stage TE cooled, -20°C) versions, suitable for typical wavelengths of 1300 nm or 1550 mm, as well as extended InGaAs PIN photodiodes that can be used for wavelengths up to 2600 nm: IE6C1 C1 (1-stage TE cooled, -10°C) or IE6C2 (2-stage TE cooled, -20°C). Available in several different packaging options like TO-5, TO-8, TO-37, or TO-66, these detectors feature active areas with diameters ranging from 500 µm all the way to 5 mm. Custom filters, windows and packages are available on request. Beyond its range of component-type InGaAs photodiodes, New England Photoconductor also provides the AP300-T2 TE cooled InGaAs infrared sensor in a compact (38 mm diameter x 63.5 mm length) and solid case with flexible mounting options – all that is needed is a DC power supply. Available with active sensor area diameters of 0.5 mm, 1.0 mm and 2.0 mm, the AP300-T2 is an amplified extended InGaAs sensor with a 2-stage thermo-electric cooler (TEC). A low-noise amplifier provides detector-noise limited performance up to 2.6 µm in a compact package. You need an OEM custom configuration? We are happy to help – contact us to discuss your project’s requirements. Part Number IC1-1 IC1-2 IC1-3 IC1-5 IC2-1 IC2-2 IC2-3 IC2-5 TEC Stages 1 2 Active Area Diameter 1 mm 2 mm 3 mm 5 mm 1 mm 2 mm 3 mm 5 mm Responsivity @1300nm Min./Typ. 0.80/0.90 A/W Responsivity @1550nm Min./Typ. 0.90/0.95 A/W Typ. NEP @1550 nm 5.0 x 10-15 W/√Hz 1.0 x 10-14 W/√Hz 2.0 x 10-14 W/√Hz 3.0 x 10-14 W/√Hz 3 x 10-15 W/√Hz 7 x 10-15 W/√Hz 1 x 10-14 W/√Hz 2 x 10-14 W/√Hz Dark Current @1 V Typ./Max 0.07/0.35 nA 0.3/1.5 nA 1.0/5.0 nA 2.5/12.5 nA 0.03/0.15 nA 0.15/0.75 nA 0.5/2.5 nA 1.2/6.0 nA Capacitance @1 V 150 pF 550 pF 1000 pF 3500 pF 150 pF 550 pF 1000 pF 3500 pF Cut-Off Frequency @1V 18 MHz 4 MHz 2 MHz 0.6 MHz 18 MHz 4 MHz 2 MHz 0.6 MHz Shunt Resistance 1500 MΩ 300 MΩ 100 MΩ 30 MΩ 3000 MΩ 600 MΩ 200 MΩ 60 MΩ Max. Reverse Voltage 5 V 2 V 5 V Test Temperature -10°C -20°C Storage Temperature -55 to +85°C Max. Cooler Power 1.0 V @2.0 A 2 V @1.3 A 0.8 V @1.3 A 1.9 V @1.4 A Package Options TO-5, TO-37 TO-8, TO-66 TO-5, TO-37 TO-8, TO-66 Thermistor @+25°C 1 KΩ     Part Number IE6C1-.5 IE6C1-1 IE6C1-2 IE6C2-.5 IE6C2-1 IE6C2-2 TEC Stages 1 2 Active Area Diameter 0.5 mm 1 mm 2 mm 0.5 mm 1 mm 2 mm Responsivity @2300 nm Min./Typ. 0.9/1.3 A/W Dark Current @0.5 V Typ./Max. 0.5/4 nA 1.5/7.5 nA 7.5/40  nA 0.2/0.5 nA 0.8/4 nA 4/50 nA Capacitance @0 V 60 pF 200 pF 800 pF 60 pF 200 pF 800 pF Shunt Resistance @10 mV 15 kΩ 3 kΩ 1 kΩ 400 kΩ 60 kΩ 20 kΩ D* 1 x 1011 cm.√Hz/W 2 x 1011 cm.√Hz/W NEP 4 x 10-13 W/√Hz 7 x 10-13 W/√Hz 1 x 10-12 W/√Hz 3 x 10-13 W/√Hz 5 x 10-13 W/√Hz 9 x 10-13 W/√Hz Spectral Range 1.2-2.57 µm 1.2-2.55 µm Cut-Off Frequency (@0 V, -3dB) 50 MHz 15 MHz 5 MHz 50 MHz 15 MHz 5 MHz Test Temperature -10°C -20°C -20°C -20°C Storage Temperature -40 to +125°C Package Options TO-5, TO-8, TO-37, TO-66   Key Features: Active Area Diameter: 500 µm to 5.0 mm Responsivity @1300 nm (IC1, IC2 Series): 0.80 A/W (Min.), 0.90 A/W (Typ.) Responsivity @1550 nm (IC1, IC2 Series): 0.90 A/W (Min.), 0.95 A/W (Typ.) Responsivity @2300 nm (IE6C1, IE6C2 Series): 0.9 A/W (Min.), 1.3 A/W (Typ.) Max. Dark Current: 0.15 nA to 50 nA (@1 V, 0.5 V) Typ. Dark Current: 0.03 nA to 7.5 nA (@5 V, 1 V) Capacitance: 60 pF to 3500 pF (@0 V, 1 V)

Peak Wavelength Response 2.2, 2.5 µm; Active Area 0.25-10 mm²; Time Constant <100->300 µs; Resistance 0.2-10 MΩ; Typ. Bias Voltage 10-500 VDC New England Photoconductor’s range of lead sulfide (PbS) plate cells series for room temperature applications is available as “open” A, B, and C detectors, as well as hermetically sealed (AM, BM, CM). These detectors in TO-3, TO-5, TO-8, and TO-46 packages feature standard size active areas ranging from 0.25 mm² to 10 mm² – special sizes are available upon request. C Series components can be gridded for low resistance. The PbS room temperature detectors can be supplied with or without leads.   Code Number Active Area Typ. Bias Voltage Typ.  VW-1 Responsivity Package Size .25 0.25 mm² 10 VDC 8-10 x 105 TO-5 & TO-46 .5 0.5 mm² 20 VDC 7-9 x 105 TO-5 & TO-46 1 1 mm² 50 VDC 5-8 x 105 TO-5 & TO-46 2 2 mm² 100 VDC 2-6 x 105 TO-5 3 3 mm² 150 VDC 1-3 x 105 TO-5 5 5 mm² 250 VDC 0.9-2 x 105 TO-8 10 10 mm² 500 VDC 4-8 x 104 TO-3   Key Features: Hermetically Sealed Packages Room Temperature Operation Custom Wavelength Response Custom Test Procedure Active Area: 0.25 mm² to 10 mm² D* Relative Sensitivity (Pk.,600,1): 0.5 x 1011 to 1.2 x 1011 Peak Wavelength Response: 2.2 µm (A & AM,B & BM), 2.5 µm (C & CM) Time Constant: <100 µs (A & AM), 100 µs to 300 µs (B & BM), >300 µs (C & CM) Resistance: 0.2 MΩ to 2.0 MΩ (A & AM,B & BM), 0.5 MΩ to 10 MΩ (C & CM) Hybrid Amplifiers 2 Year Warranty Filters Available  

Peak Wavelength Response 2.5-2.7 µm; Active Area 1-10 mm²; Time Constant 800-1800 µs; Resistance 2-15 MΩ; Typ. Bias Voltage 50-500 VDC New England Photoconductor’s range of thermoelectrically (TE) cooled lead sulfide (PbS) detector series is available as D (1-stage TE cooled, -25°C), D2 (2-stage TE cooled, -35°C), and D21 (2-stage TE cooled, -50°C) types. These detectors in TO-3, TO-5, TO-8, TO-37 and TO-66 packages feature standard size active areas ranging from 1 mm² to 10 mm² – special sizes are available upon request. Code Number Active Area Typ. Bias Voltage Typ.  VW-1 Responsivity Package Size -25°C -35°C -50°C 1 1 mm² 50 VDC 0.9-1 x 106 1-2 x 106 1.5-2.5 x 106 TO-5, TO-8, TO-37, TO-66 2 2 mm² 100 VDC 6-9 x 105 0.6-1 x 106 0.6-1.2 x 106 3 3 mm² 150 VDC 4-6 x 105 5 5 mm² 250 VDC 2-4 x 105 NA 2-4 x 105 TO-8, TO-66 10 10 mm² 500 VDC 1-2 x 105 NA TO-3   Key Features: Hermetically Sealed Packages Custom Wavelength Response Custom Test Procedure Active Area: 1 mm² to 10 mm² D* Relative Sensitivity (Pk.,600,1): 1.5 x 1011(D), 2.5 x 1011(D2), 2.8 x 1011(D21) Peak Wavelength Response: 2.5 µm (D1), 2.6 µm (D2), 2.7 µm (D21) Typ. Time Constant: 800 ms (D), 1200 ms (D2), 1800 ms (D21) Resistance: 2-10 MΩ (D), 2-12 MΩ (D2), 2-15 MΩ (D21) Operating Temperature: -25°C (D), -35°C (D2), -50°C (D21) Cooler Power: 1 V / 2 A (D), 0.8 V / 1.3 A (D2); 1.9 V / 1.4 A (D21) Custom Design Services 2 Year Warranty Filters Available

Peak Wavelength Response 3.8 µm; Active Area 1-10 mm²; Time Constant 2-5 µs; Resistance 0.1-4 MΩ; Typ. Bias Voltage 50-500 VDC New England Photoconductor’s range of lead selenide (PbSe) plate cells series for room temperature applications is available as F (regular performance), FA (medium performance) and FS (high performance) detectors, as well as hermetically sealed (FM, FAM, FSM). These detectors in TO-3, TO-5, TO-8, and TO-46 packages feature standard size active areas ranging from 1 mm² to 10 mm² – special sizes are available upon request. Code Number Active Area Typ. Bias Voltage Typ.  VW-1 Responsivity Package Size 1 1 mm² 50 VDC 1-4 x 104 TO-5 & TO-46 2 2 mm² 100 VDC 0.5-2 x 104 TO-5 3 3 mm² 150 VDC 0.4-1 x 104 TO-5 5 5 mm² 250 VDC 3-6 x 103 TO-8 10 10 mm² 500 VDC 600 TO-3   Key Features: Hermetically Sealed Packages Room Temperature Operation Custom Wavelength Response Custom Test Active Area: 1 mm² to 10 mm² D* Relative Sensitivity (Pk.,1000,1): 0.1-0.3 x 1010(F&FM), 0.4-0.5 x 1010(FA&FAM), 0.6-1.5 x 1010(FS&FSM) Typ. Peak Wavelength Response: 3.8 µm Typ. Time Constant: 2 µs to 5 µs Resistance: 0.1 MΩ to 4 MΩ Hybrid Amplifiers 2 Year Warranty Customized Filters Available Custom Packages

Peak Wavelength Response 4.3-4.6 µm; Active Area 1-10 mm²; Time Constant 5-20 µs; Resistance 0.2-15 MΩ; Typ. Bias Voltage 50-500 VDC New England Photoconductor’s range of thermoelectrically (TE) cooled lead selenide (PbSe) detector series comprises of G (1-stage TE cooled, -25°C), G2 (2-stage TE cooled, -35°C), and G21 (2-stage TE cooled, -50°C) types. Beyond this list, a GS21 type PbSE TE cooled detector is available (2-stage TE cooled, -50°C), featuring select high-performance PbSe – contact AMS Technologies for details. Standard active area sizes for these detectors in TO-3, TO-5, TO-8, TO-37 and TO-66 packages range from 1 mm² to 10 mm² – special sizes are available upon request. Code Number Active Area Typ. Bias Voltage Typ.  VW-1 Responsivity Package Size -25°C -35°C -50°C 1 1 mm² 50 VDC 4-6 x 104 6-10 x 104 10-15 x 104 TO-5, TO-8, TO-37, TO-66 2 2 mm² 100 VDC 2-3 x 104 3-5 x 104 5-8 x 104 3 3 mm² 150 VDC 1-2 x 104 2-3 x 104 3-5 x 104 5 5 mm² 250 VDC 0.8-1 x 104 NA TO-8, TO-66 10 10 mm² 500 VDC 4-6 x 103 NA TO-3 .  Key Features: Hermetically Sealed Packages Custom Wavelength Response Custom Test Procedure Active Area: 1 mm² to 10 mm² D* Relative Sensitivity (Pk.,1000,1): 1-3 x 1010(G, G2), 2-4 x 1010(G21) Peak Wavelength Response: 4.3 µm (G), 4.4 µm (G2), 4.6 µm (G21) Time Constant: 5-10 µs (G), 15 µs (G2), 20 µs (G21) Resistance: 0.2-7 MΩ (G), 0.2-10 MΩ (G2), 0.2-15 MΩ (G21) Operating Temperature: -25°C (G), -35°C (G2), -50°C (G21) Cooler Power: 1.2 V / 2 A (G), 0.8 V / 1.3 A (G2); 2.2 V / 1.2 A (G21) Custom Design Service 2 Year Warranty Customized Filters Available