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LHCVN Series 905 nm Hybrid Pulsed Laser Diodes

Product information "LHCVN Series 905 nm Hybrid Pulsed Laser Diodes"

905 nm; Spectral Width 5 nm; Min. Optical Power 20-350 W; Typ. Pulse Width 10, 30 ns; Emitter Area 200x10, 200x480 µm; No. of Diodes 1, 5

OSI LaserDiode’s LHCVN Series of 905 nm hybrid laser diodes for pulsed operations incorporates a pulsed laser firing circuit into the same package as the laser diode. The hybridization of the driver permits much narrower pulse widths and faster rise times at lower voltage requirements than discrete laser drivers.

The LHCVN series is compatible with all OSI LaserDiode standard MOCVD laser diodes and can be optimally driven utilizing commercially available MOSFET drivers. The hermetic TO5 package and increased efficiency is ideal when space and weight are of primary concern.

Key Features:

  • High Efficiency
  • High Peak Power Emission
  • Peak Emission Wavelength: 905 nm
  • Spectral Width (FWHM): 5 nm
  • Beam Spread (FWHM): 9° x 25°
  • Low Voltage Operation (100 V Maximum)
  • Number of Diodes: 1, 5
  • Minimum Optical Power: 20 to 350 W
  • Pulse Width: 10, 30 ns (Typical)
  • Emitter Area: 200 x 10 µm, 200 x 480 µm
  • Rise/Fall Times: 2 ns (Typical)
  • Operating Voltage: 40, 100 V (Typical)
  • RoHS Compliant
  • Operating Temperature: 0 °C to +75 °C
  • Dimensions: 9.19 mm Dia. x 10.67 mm Length

Applications: Rangefinders, Ceilometers; Weapons Simulation; Surveying; LIDAR

Manufacturer "OSI LaserDiode"
OSI LaserDiode’s (LDI) comprehensive optoelectronic manufacturing facility utilizes the supplier’s core competencies and capabilities. Customers are provided with a diverse and extensive offering of dependable, quality detector and emitter products. OSI LaserDiode’s knowledgeable engineering and applications teams enable various manufacturing capabilities including but not limited to die and device fabrication, device packaging capabilities like TO-based, 14-pin DIL or butterfly packages, laser-welded fiber pigtails and hermetic packaging, fiber metallization as well as device characterization, test and qualification.
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