UV-XXX/FIL-UV50 UV-enhanced Si Photodiodes
Product information "UV-XXX/FIL-UV50 UV-enhanced Si Photodiodes"
254 nm Band Optimized; Active Area 0.8 to 100 mm2; AA Dia. 1.0 to 11.28 mm Round, 3.05 x 3.81 to 6.60 x 5.33 mm Rect.; Rise Time 0.2 to 5.9 µs; Responsivity 0.09, 0.14 A/W; Capacitance 60 to 4,500 pF; Package TO-5, TO-8, BNC, Lo-Prof, Plastic
OSI Optoelectronics offers two distinct families of UV-enhanced silicon photodiodes: Inversion layer (channel) series and planar diffused series. Both families of devices are especially designed for low-noise detection in the UV region of the electromagnetic spectrum.
OSI Optoelectronics UV-XXX and FIL-UV50 series of inversion layer structure, UV-enhanced photodiodes exhibit 100% internal quantum efficiency (QE) and are well suited for low-intensity light measurements. They feature high shunt resistance, low noise and high breakdown voltages.
The response uniformity across the surface and quantum efficiency improves with 5 to 10 V applied reverse bias. In photovoltaic mode (unbiased), the capacitance is higher than with diffused devices but decreases rapidly with an applied reverse bias.
Photocurrent non-linearity sets in at lower photocurrents for inversion layer devices compared to the diffused ones. Below 700 nm, their responsivities vary little with temperature.
Key Features:
- Inversion Layer UV-enhanced Silicon Photodiodes
- 100% Internal Quantum Efficiency (QE)
- Ultra-high Shunt Resistance
- Excellent UV Response
Applications: Pollution Monitoring; Medical Instrumentation; UV Exposure Meters; Spectroscopy; Water Purification; Fluorescence