TPMJ-3A-1550-8/125-0.25-18-2-12-2 PM Tapered and Lensed Fiber

Polishing Film;AAS GC Film (3 um, A, 20x20, 100 sheets)

2-5.5 µm; Active Area 0.01, 1 mm²; Responsivity ≥1.3-≥1.5 A/W; Detectivity ≥5.0x108-5.0×1011 cm·Hz1/2/W; Resistance ≥70 Ω-≥200 kΩ; Package TO39, TO8 Vigo System’s PVA and PVIA series feature photovoltaic detectors (photodiodes) in which the semiconductor layer is made of InAs or InAsSb materials. Absorbed photons produce charge carriers that are collected within the diodes. Photovoltaic detectors have complex current/voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage. PVA/PVIA series detectors are cadmium and mercury free. As a result, the detectors comply with the RoHS directive and can be used in the consumer market. Vigo System’s PVA series features 2.0 µm to 5.5 μm ambient temperature, uncooled IR photovoltaic detectors based on InAs1-xSbx alloys (epitaxial InAs or InAsSb hetereostructure). The devices are temperature stable up to +300 °C and mechanically durable. PVA series devices are also available thermoelectrically cooled by two-stage TEC structures (PVA-2TE series) with a 3° wedged sapphire (wAl2O3) window preventing unwanted interference effects. The PVIA series of 2.0 µm to 5.5 μm InAs/InAsSb IR photovoltaic detectors is optically immersed in order to further improve the parameters of the devices and also available either as uncooled, ambient temperature detectors or as two-stage thermoelectrically cooled (PVIA-2TE series) variants, again with a 3° wedged sapphire (wAl2O3) window that prevents unwanted interference effects. For its range of PVA/PVIA InAs/InAsSb photovoltaic detectors, Vigo System provides a broad range of configurable line infrared (IR) detection modules that integrate the IR photodetector with the preamplifier and – depending on the module series – also signal processing electronics, optics, heat dissipation systems and other components in a common package. Key Features: Active Element Material: Epitaxial InAs or InAsSb Hetereostructure Mechanically Durable Spectral Range: 2 µm to 5.5 μm Cut-on Wavelength λcut-on (10%): 2.1 to 2.4 μm ±0.2 µm Peak Wavelength λpeak: 2.9 to 4.7 μm ±0.3 µm Cut-off Wavelength λcut-off (10%): 3.4 to 5.5 μm ±0.2 µm Detectivity D*: ≥5.0x108 to ≥5.0×1011 cm·Hz1/2/W (λpeak) Current Responsivity Ri(λpeak): ≥1.3 to ≥1.5 A/W Temperature Stable up to +300 °C Uncooled, Room Temperature Operation or 2-Stage Thermoelectrically (TE) Cooled Versions Active Element Temperature Tdet: ~230 K (TE-cooled Versions) Complying With the RoHS Directive Size of Active Area A: 0.1×0.1 mm², 1x1 mm² Resistance R (PVM, PVMI, PEM, PEMI Series): ≥70 Ω to ≥200 kΩ Time Constant τ: ≤5 to ≤60 ns No Bias Required No 1/f Noise Sensitive to IR Radiation Polarisation Immersion Microlens Technology Available (PVIA Series) Acceptance Angle Φ: ~36°, ~70°, ~90° Package: TO39, TO8 Infrared Windows: None, wAl2O3 Wide Range of Dedicated Preamplifiers and Accessories Available Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense