TBR µMOPA Single Frequency Laser Diodes Toptica eagleyard

Spectral Range 350-1700nm; Resolution 1280x1024 pixels; Maximum Pixel Rate 93 Mpixel/s, Maximum Dynamic Range 680:1; Global Shutter, Peltier Cooling with Forced AirThe Excelitas pco.pixelfly™ 1.3 SWIR is recognized for its high-performance capabilities in machine vision, attributed to its specialized InGaAs image sensor designed to capture images across the shortwave infrared (SWIR), near infrared, and visible spectrum. It demonstrates notable sensitivity across the entire spectral range, reaching up to 90% sensitivity in the shortwave infrared band. Its small pixel size enables the utilization of compact magnification optics for microscopy, while also maintaining low dark current levels for prolonged exposure times.Key features:High sensitivityWide spectral rangeRobust DesignHigh ResolutionVersatileApplications: Low-light imaging, industrial inspection, material analysis, and scientific researchPlease note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden. 

653-1120 nm; Spectral Width 2-10 nm; Output Power 1-19 W (CW), 1.8-90 W (Pulsed); Threshold Current ≤500-3000 mA; Slope Efficiency 0.6-1.0 W/A; Forward Current 1,6-100 AToptica egleyard’s BAL series of multi mode laser diodes are high brightness, broad area laser (BAL) diodes operating multi mode spatially and longitudinally. Within the BAL series, wavelengths between 653 and 1,120 nm are available with output powers between 1 and 19 W in cw mode or even up to 90 W in pulse mode.Its high pulse energy and fast rise time makes the BAL series of multi mode laser diodes the laser source of choice for high resolution sensing applications under harsh environmental conditions. Stripe widths from 100 to 400 µm are available to optimize beam structure and power for the application.Toptica eagleyard’s hermetically sealed TO packages as well as C-mount or fiber pigtailed flat packages make such laser diodes ideally suited for applications with either demanding size restrictions or with preferred fiber pigtail handling. The output power of the fiber of a cost efficient pigtailed single emitter starts at 1 W and reaches up to 90 W peak in pulsed mode.Key Features:Broad Area, Edge Emitting Laser DiodesBroad Wavelength Range: 653 to 1,120 nmHigh Output Power: 1 to 19 W (CW) and 1.8 to 90 W (Pulsed)Hermetically SealedFast/Slow Axis CollimationTyp. Spectral Width: 2 to 10 nmStripe Width: 100 to 400 µmCavity Length: 1 to 4 mmBeam Divergence: Parallel (Slow Axis) 1.5° to 10° (FWHM), Perpendicular (Fast Axis) 0.6° to 30° (FWHM)Extreme Operating Temperature Range: -60 to +90 °CPackages: C-Mount, 9 mm TO TO with Thread, Integrated FAC/SAC, Flatpack With Window ProductWavelengthOutput PowerOperational ModePackageSpecificsBAL-0653-01000-1510-CMT02-0000653 nm1 WCWC-Mount 2 mmPowerful, High Brightness, Longitudinally Multi ModeBAL-0670-00001-1510-SOT23-0010670 nm1.5 WPulsedTO-Can 9 mmSuitable for Harsh EnvironmentsBAL-0670-00004-1510-SOT23-0010670 nm4 WPulsedTO-Can 9 mmSuitable for Harsh EnvironmentsBAL-0670-00010-1510-SOT23-0016670 nm10 WPulsedTO-Can 9 mmSuitable for Harsh EnvironmentsBAL-0808-00005-2013-SOT12-0010808 nm6 WPulsedTO-Can 9 mmSuitable for Harsh EnvironmentsBAL-0808-08000-4020-CMT04-0000808 nm8 WCWC-Mount 4 mmSuitable for Harsh EnvironmentsBAL-0808-00020-4020-FLW01-0010808 nm20 WPulsedFlatpack With WindowSuitable for Harsh EnvironmentsBAL-0808-00025-2013-SOT23-0016808 nm25 WPulsedTO-Can 9 mmSuitable for Harsh EnvironmentsBAL-0905-00010-1040-TOE02-0010905 nm12 WPulsedTO With ThreadSuitable for Harsh EnvironmentsBAL-0905-00050-1040-TOE22-0010905 nm50 WPulsedTO With ThreadSuitable for Harsh EnvironmentsBAL-0905-00090-1040-TOE22-0010905 nm90 WPulsedTO With ThreadSuitable for Harsh EnvironmentsBAL-0980-08000-4020-CMT04-0000980 nm8 WCWC-Mount 4 mmSuitable for Harsh EnvironmentsBAL-1064-08000-4020-CMT04-00001064 nm8 WCWC-Mount 4 mmSuitable for Harsh EnvironmentsApplications: Time-of-Flight LIDAR; Laser Sensing in Missiles; Laser Ignitors of Optopyro Elements for Satellites or Launchers; Active Protection Systems; Material Processing; Medical; Solid-state Laser PumpingPlease note that TOPTICA eagleyard products are not availble from us in Denmark, Finland, Iceland, Norway, and Sweden. 

Active Area Diameter 0.5 to 1.5 mm; Responsivity 8 to 128 A/W; Capacitance 1.6 to 4 pF; Package TO-5, TO-8 Flange, TO-18Exelitas‘ series of high-performance, rear-entry, “reach-through” silicon avalanche photodiodes (APDs) offer the best compromise in terms of cost and performance for applications requiring high-speed and low-noise photon detection from 400 nm up to 1100 nm.These Silicon APDs feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. The active area varies from 0.5 mm to 1.5 mm.C30817EH: This silicon avalanche photodiode for general-purpose applications is designed using a double-diffused “reach through” structure. This structure provides high responsivity between 400 to 1100 nm, as well as fast rise and fall times at all wavelengths. Since the fall time characteristics has no “tail”, the responsivity of the device is independent of modulation frequency up to about 200 MHz.C30884EH: This silicon avalanche photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz. This Si APD is made using a double-diffused “reach-through” structure and is optimized for high responsivity at wavelengths of below 1000 nm.C30902BH: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active area diameter. Suitable for biomedical and analytical applications, this Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths.C30902EH: This high-performance silicon avalanche photodiode (APD) has an active area diameter of 0.5 mm and is suitable for biomedical and analytical applications. This Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths.C30902EH-2: High-performance silicon avalanche photodiode (Si APD) with 0.5 mm active diameter and a 905 nm bandpass filter in a TO-18 housing. This Si APD is suitable for biomedical and analytical applications.C30902SH: Selected high-performance silicon avalanche photodiodes with extremely low noise and bulk dark current. Suitable for biomedical and analytical applications, this Si APD provides 0.5 mm active diameter in TO-18 housing.C30902SH-2: High-performance, low-noise, selected silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in a TO-18 housing with an inline 905 nm bandpass filter.C30902SH-TC: High-performance, low-noise, selected, single-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing.C30902SH-DTC: High-performance, low-noise, selected, double-stage TE-cooled silicon avalanche photodiode (Si APD) for biomedical and analytical applications with 0.5 mm active area diameter in TO-66 housing.C30916EH: Large-area silicon avalanche photodiode with 1.5 mm active area diameter in TO-5 housing.  Part Number Active Diameter Capacitance Rise/Fall Time Dark Current Breakdown Voltage min Breakdown Voltage max Temperature Coefficient Typical Gain Responsivity NEP Package                 830 nm 900 nm 1060 nm     Unit mm pF ns nA V V V/°C   A/W A/W A/W fW/√Hz   C30817EH 0.8 2 2 50 300 475 2.2 120 - 75 - 13 TO-5 C30884E 0.8 4 1 100 190 290 1.1 100 - 63 8 13 TO-5 C30902BH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 Ball lens TO-18 C30902EH 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, flat window C30902EH-2 0.5 1.6 0.5 15 185 265 0.7 150 77 60 - 3 TO-18, built-in 905 nm filter C30902SH 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, flat window C30902SH-2 0.5 1.6 0.5 15 185 265 0.7 250 128 108 - 0.9 TO-18, built-in 905 nm filter C30902SH-TC 0.5 1.6 0.5 2 225 - 0.7 250 128 108 - 0.04 pA/√Hz TO-8 flange C30902SH-DTC 0.5 1.6 0.5 1 225 - 0.7 250 128 108 - 0.02 pA/√Hz TO-8 flange C30916EH 1.5 3 3 100 315 490 2.2 80 - 50 12 20 TO-5 Applications: LIDAR; Laser Detection; Range Finding; Small-signal Fluorescence; Photon Counting; Bar Code Scanning; Optical Communications; High-speed Switching Systems; Transit-time Measurements; Biomedical and Analytical Applications; Confocal Microscopes; Spectrophotometers; Luminometers; DNA Sequencers, Particle Sizing Please note that Excelitas products are available from us only in Denmark, Finland, Iceland, Norway, and Sweden.