SECx High-power Laser Diodes

Single Emitter, C-Mount; 803 to 975 nm; Spectral Width 2, 4 nm; Output Power 4-9 W CW; Threshold Current 0.5-1.2 A; Slope Efficiency 1.0, 1.1 W/A

II-VI Incorporated has designed the SECx series of single-emitter high-power laser diodes on C-Mount to provide the high output power, high coupling efficiency and high reliability required for pumping solid-state and next generation fiber lasers as well as direct laser and other high-power laser diode applications.

SECx series laser diodes are available in three versions:

• SEC4-808A/B/C-01: 4 W, 808 nm, 90 µm wide emitter
• SEC8-808A/B/C-01: 8 W, 808 nm, 190 µm wide emitter
• SEC9-9xx-01: 9 W, 9xx nm, 90 μm wide emitter

The proprietary E2 front mirror passivation process, developed at II-VI Incorporated’s Zurich site, prevents catastrophic optical damage (COD) to the laser diode facet even at extremely high output powers. The single emitter laser diodes are p-side down mounted on a submount that is attached to a C-Mount.

Key Features:

• 3.6 x 0.4/0.5 mm Laser Diode
• 90/190 µm Wide Emitter
• Highly Reliable Single Quantum Well MBE Structure
• Cu C-Mount
• RoHS Compliant
• CW Output Power: 4, 8, 9 W (p-side Down Mounted)
• Center Wavelength: 803, 806, 808, 915, 940, 975 nm (Other Available on Request)
• Spectral Width: 2, 4 nm
• Wavelength Shift With Temperature: 0.3 nm/°C
• Beam Divergence Parallel/Perpendicular to Junction: 6°/32°, 8°/23°
• Polarization: TE
• Threshold Current: 0.5, 0.6, 1.2 A
• Slope Efficiency: 1.0, 1.1 W/A
• Operating Current: 4, 8, 9.5 A
• Operating Voltage: 1.9 V
• Package Dimensions: 4.2 x 8 x 7.58 mm

Applications: Solid State Laser Pumping; Fiber Laser Pumping; Medical; Analytical; Printing; Material Processing